Download or read book Analysis of Mathematical Models of Semiconductor Devices written by Michael Stephen Mock and published by . This book was released on 1983 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analysis of Charge Transport written by Joseph W. Jerome and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 177 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses the mathematical aspects of semiconductor modeling, with particular attention focused on the drift-diffusion model. The aim is to provide a rigorous basis for those models which are actually employed in practice, and to analyze the approximation properties of discretization procedures. The book is intended for applied and computational mathematicians, and for mathematically literate engineers, who wish to gain an understanding of the mathematical framework that is pertinent to device modeling. The latter audience will welcome the introduction of hydrodynamic and energy transport models in Chap. 3. Solutions of the nonlinear steady-state systems are analyzed as the fixed points of a mapping T, or better, a family of such mappings, distinguished by system decoupling. Significant attention is paid to questions related to the mathematical properties of this mapping, termed the Gummel map. Compu tational aspects of this fixed point mapping for analysis of discretizations are discussed as well. We present a novel nonlinear approximation theory, termed the Kras nosel'skii operator calculus, which we develop in Chap. 6 as an appropriate extension of the Babuska-Aziz inf-sup linear saddle point theory. It is shown in Chap. 5 how this applies to the semiconductor model. We also present in Chap. 4 a thorough study of various realizations of the Gummel map, which includes non-uniformly elliptic systems and variational inequalities. In Chap.
Download or read book Analysis and Simulation of Semiconductor Devices written by S. Selberherr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
Download or read book The Stationary Semiconductor Device Equations written by P.A. Markowich and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last two decades semiconductor device simulation has become a research area, which thrives on a cooperation of physicists, electrical engineers and mathe maticians. In this book the static semiconductor device problem is presented and analysed from an applied mathematician's point of view. I shall derive the device equations - as obtained for the first time by Van Roosbroeck in 1950 - from physical principles, present a mathematical analysis, discuss their numerical solu tion by discretisation techniques and report on selected device simulation runs. To me personally the most fascinating aspect of mathematical device analysis is that an interplay of abstract mathematics, perturbation theory, numerical analysis and device physics is prompting the design and development of new technology. I very much hope to convey to the reader the importance of applied mathematics for technological progress. Each chapter of this book is designed to be as selfcontained as possible, however, the mathematical analysis of the device problem requires tools which cannot be presented completely here. Those readers who are not interested in the mathemati cal methodology and rigor can extract the desired information by simply ignoring details and proofs of theorems. Also, at the beginning of each chapter I refer to textbooks which introduce the interested reader to the required mathematical concepts.
Download or read book Introduction to Semiconductor Device Modelling written by Christopher M. Snowden and published by World Scientific. This book was released on 1998 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Download or read book Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices written by Randolph Bank and published by Birkhäuser. This book was released on 2012-12-06 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt: Progress in today's high-technology industries is strongly associated with the development of new mathematical tools. A typical illustration of this partnership is the mathematical modelling and numerical simulation of electric circuits and semiconductor devices. At the second Oberwolfach conference devoted to this important and timely field, scientists from around the world, mainly applied mathematicians and electrical engineers from industry and universities, presented their new results. Their contributions, forming the body of this work, cover electric circuit simulation, device simulation and process simulation. Discussions on experiences with standard software packages and improvements of such packages are included. In the semiconductor area special lectures were given on new modelling approaches, numerical techniques and existence and uniqueness results. In this connection, mention is made, for example, of mixed finite element methods, an extension of the Baliga-Patankar technique for a three dimensional simulation, and the connection between semiconductor equations and the Boltzmann equations.
Download or read book Hierarchy of semiconductor equations relaxation limits with initial layers for large initial data written by Shinya Nishibata and published by World Scientific. This book was released on 2011-07 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides a recent study of mathematical research on semiconductor equations. With recent developments in semiconductor technology, several mathematical models have been established to analyze and to simulate the behavior of electron flow in semiconductor devices. Among them, a hydrodynamic, an energy-transport and a drift-diffusion models are frequently used for the device simulation with the suitable choice, depending on the purpose of the device usage. Hence, it is interesting and important not only in mathematics but also in engineering to study a model hierarchy, relations among these models. The model hierarchy has been formally understood by relaxation limits letting the physical parameters, called relaxation times, tend to zero. The main concern of this volume is the mathematical justification of the relaxation limits. Precisely, we show that the time global solution for the hydrodynamic model converges to that for the energy-transport model as a momentum relaxation time tends to zero. Moreover, it is shown that the solution for the energy-transport model converges to that for the drift-diffusion model as an energy relaxation time tends to zero. For beginners' help, this volume also presents the physical background of the semiconductor devices, the derivation of the models, and the basic mathematical results such as the unique existence of time local solutions.Published by Mathematical Society of Japan and distributed by World Scientific Publishing Co. for all markets
Download or read book Mathematical Problems in Semiconductor Physics written by Angelo Marcello Anile and published by Springer. This book was released on 2003-12-10 with total page 149 pages. Available in PDF, EPUB and Kindle. Book excerpt: On the the mathematical aspects of the theory of carrier transport in semiconductor devices. The subjects covered include hydrodynamical models for semiconductors based on the maximum entropy principle of extended thermodynamics, mathematical theory of drift-diffusion equations with applications, and the methods of asymptotic analysis.
Download or read book Semiconductor Equations written by Peter A. Markowich and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 261 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices.
Download or read book Topics in Applied Analysis and Optimisation written by Michael Hintermüller and published by Springer Nature. This book was released on 2019-11-27 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume comprises selected, revised papers from the Joint CIM-WIAS Workshop, TAAO 2017, held in Lisbon, Portugal, in December 2017. The workshop brought together experts from research groups at the Weierstrass Institute in Berlin and mathematics centres in Portugal to present and discuss current scientific topics and to promote existing and future collaborations. The papers include the following topics: PDEs with applications to material sciences, thermodynamics and laser dynamics, scientific computing, nonlinear optimization and stochastic analysis.
Download or read book Infinite Dimensional Algebras and Quantum Integrable Systems written by Petr P. Kulish and published by . This book was released on 2005 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Optimization Models for Semiconductor Devices written by Martin Burger and published by . This book was released on 2015-12 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microwave and RF Semiconductor Control Device Modeling written by Robert H. Caverly and published by Artech House. This book was released on 2016-02-01 with total page 285 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive new resource presents a detailed look at the modeling and simulation of microwave semiconductor control devices and circuits. Fundamental PIN, MOSFET, and MESFET nonlinear device modeling are discussed, including the analysis of transient and harmonic behavior. Considering various control circuit topologies, the book analyzes a wide range of models, from simple approximations, to sophisticated analytical approaches. Readers find clear examples that provide guidance in how to use specific modeling techniques for their challenging projects in the field. Numerous illustrations help practitioners better understand important device and circuit behavior, revealing the relationship between key parameters and results. This authoritative volume covers basic and complex mathematical models for the most common semiconductor control elements used in today’s microwave and RF circuits and systems.
Download or read book Semiconductor Device Modelling written by Christopher M. Snowden and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.
Download or read book Mathematical Modelling and Simulation of Electrical Circuits and Semiconductor Devices written by R. Bank and published by Birkhäuser. This book was released on 2013-11-22 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: Numerical simulation and modelling of electric circuits and semiconductor devices are of primal interest in today's high technology industries. At the Oberwolfach Conference more than forty scientists from around the world, in cluding applied mathematicians and electrical engineers from industry and universities, presented new results in this area of growing importance. The contributions to this conference are presented in these proceedings. They include contributions on special topics of current interest in circuit and device simulation, as well as contributions that present an overview of the field. In the semiconductor area special lectures were given on mixed finite element methods and iterative procedures for the solution of large linear systems. For three dimensional models new discretization procedures including software packages were presented. Con nections between semiconductor equations and the Boltzmann equation were shown as well as relations to the quantum transport equation. Other issues discussed in this area include the design of simulation programs for semiconductors, vectorcomputers, and interface problems in several dimensions. Topics discussed in the area of circuit simulation include the index classification of differential-algebraic systems, connections with ill-posed problems, and regularization techniques. Split discretization procedures were given for the efficient calculation of periodic solutions of circuits taking into acount the latency. Homotopy methods and new numerical techniques for differential-algebraic systems were presented, and im provements of special numerical methods for standard software packages were sug gested. The editors VII Table of Contents Circuit Simulation Merten K.
Download or read book Noise in Semiconductor Devices written by Fabrizio Bonani and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 241 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides an overview of the physical basis of noise in semiconductor devices, and a detailed treatment of numerical noise simulation in small-signal conditions. It presents innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions.
Download or read book Mathematical and Numerical Modelling of Heterostructure Semiconductor Devices From Theory to Programming written by E.A.B. Cole and published by Springer Science & Business Media. This book was released on 2009-11-28 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: Part of my lecturing work in the School of Mathematics at the University of Leeds involved teaching quantum mechanics and statistical mechanics to mathematics undergraduates, and also mathematical methods to undergraduate students in the School of Electronic and Electrical Engineering at the University. The subject of this book has arisen as a result of research collaboration on device modelling with members of the School of Electronic and Electrical Engineering. I wanted to write a book which would be of practical help to those wishing to learn more about the mathematical and numerical methods involved in heteroju- tion device modelling. I have introduced only a comparatively small number of t- ics, and the reader may think that other important topics should have been included. But of the topics which I have introduced, I hope that I have given the reader some practical advice concerning the implementation of the methods which are discussed. This practical advice includes demonstrating how the implementation of the me- ods may be tailored to the speci?c device being modelled, and also includes some sections of computer code to illustrate this implementation. I have also included some background theory regarding the origins of the routines.
