Download or read book Mixed Mode Simulation written by Resve A. Saleh and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: Our purpose in writing this book was two-fold. First, we wanted to compile a chronology of the research in the field of mixed-mode simulation over the last ten to fifteen years. A substantial amount of work was done during this period of time but most of it was published in archival form in Masters theses and Ph. D. dissertations. Since the interest in mixed-mode simulation is growing, and a thorough review of the state-of-the-art in the area was not readily available, we thought it appropriate to publish the information in the form of a book. Secondly, we wanted to provide enough information to the reader so that a proto type mixed-mode simulator could be developed using the algorithms in this book. The SPLICE family of programs is based on the algorithms and techniques described in this book and so it can also serve as docu mentation for these programs. ACKNOWLEDGEMENTS The authors would like to dedicate this book to Prof. D. O. Peder son for inspiring this research work and for providing many years of support and encouragement The authors enjoyed many fruitful discus sions and collaborations with Jim Kleckner, Young Kim, Alberto Sangiovanni-Vincentelli, and Jacob White, and we thank them for their contributions. We also thank the countless others who participated in the research work and read early versions of this book. Lillian Beck provided many useful suggestions to improve the manuscript. Yun cheng Ju did the artwork for the illustrations.

Download or read book Proceedings of 2nd International Conference on Micro Electronics Electromagnetics and Telecommunications written by Suresh Chandra Satapathy and published by Springer. This book was released on 2017-09-06 with total page 674 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a collection of best papers presented in the Second International Conference on Microelectronics Electromagnetics and Telecommunication (ICMEET 2016), an international colloquium, which aims to bring together academic scientists, researchers and research scholars to discuss the recent developments and future trends in the fields of microelectronics, electromagnetics and telecommunication. Microelectronics research investigates semiconductor materials and device physics for developing electronic devices and integrated circuits with data/energy efficient performance in terms of speed, power consumption, and functionality. The book discusses various topics like analog, digital and mixed signal circuits, bio-medical circuits and systems, RF circuit design, microwave and millimeter wave circuits, green circuits and systems, analog and digital signal processing, nano electronics and giga scale systems, VLSI circuits and systems, SoC and NoC, MEMS and NEMS, VLSI digital signal processing, wireless communications, cognitive radio, and data communication.

Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

Download or read book 3D TCAD Simulation for CMOS Nanoeletronic Devices written by Yung-Chun Wu and published by Springer. This book was released on 2017-06-19 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal–oxide–semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.

Download or read book Analysis and Simulation of Heterostructure Devices written by Vassil Palankovski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1260 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.

Download or read book Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond written by Guilei Wang and published by Springer Nature. This book was released on 2019-09-20 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling. As the CMOS technology roadmap calls for continuously downscaling traditional transistor structures, controlling the parasitic effects of transistors, e.g. short channel effect, parasitic resistances and capacitances is becoming increasingly difficult. The emergence of these problems sparked a technological revolution, where a transition from planar to three-dimensional (3D) transistor design occurred in the 22nm technology node. The selective epitaxial growth (SEG) method has been used to deposit SiGe as stressor material in S/D regions to induce uniaxial strain in the channel region. The thesis investigates issues of process integration in IC production and concentrates on the key parameters of high-quality SiGe selective epitaxial growth, with a special focus on its pattern dependency behavior and on key integration issues in both 2D and 3D transistor structures, the goal being to improve future applications of SiGe SEG in advanced CMOS.

Download or read book Recent Advances in PMOS Negative Bias Temperature Instability written by Souvik Mahapatra and published by Springer Nature. This book was released on 2021-11-25 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and AC stress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed.

Download or read book Wafer Level 3 D ICs Process Technology written by Chuan Seng Tan and published by Springer Science & Business Media. This book was released on 2009-06-29 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on foundry-based process technology that enables the fabrication of 3-D ICs. The core of the book discusses the technology platform for pre-packaging wafer lever 3-D ICs. However, this book does not include a detailed discussion of 3-D ICs design and 3-D packaging. This is an edited book based on chapters contributed by various experts in the field of wafer-level 3-D ICs process technology. They are from academia, research labs and industry.

Download or read book More than Moore 2 5D and 3D SiP Integration written by Riko Radojcic and published by Springer. This book was released on 2017-02-08 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a realistic and a holistic review of the microelectronic and semiconductor technology options in the post Moore’s Law regime. Technical tradeoffs, from architecture down to manufacturing processes, associated with the 2.5D and 3D integration technologies, as well as the business and product management considerations encountered when faced by disruptive technology options, are presented. Coverage includes a discussion of Integrated Device Manufacturer (IDM) vs Fabless, vs Foundry, and Outsourced Assembly and Test (OSAT) barriers to implementation of disruptive technology options. This book is a must-read for any IC product team that is considering getting off the Moore’s Law track, and leveraging some of the More-than-Moore technology options for their next microelectronic product.

Download or read book Mathematical Modeling Computational Intelligence Techniques and Renewable Energy written by Manoj Sahni and published by Springer Nature. This book was released on 2021-02-28 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents new knowledge and recent developments in all aspects of computational techniques, mathematical modeling, energy systems, applications of fuzzy sets and intelligent computing. The book is a collection of best selected research papers presented at the International Conference on “Mathematical Modeling, Computational Intelligence Techniques and Renewable Energy,” organized by the Department of Mathematics, Pandit Deendayal Petroleum University, in association with Forum for Interdisciplinary Mathematics, Institution of Engineers (IEI) – Gujarat and Computer Society of India (CSI) – Ahmedabad. The book provides innovative works of researchers, academicians and students in the area of interdisciplinary mathematics, statistics, computational intelligence and renewable energy.

Download or read book Analytic Methods for Partial Differential Equations written by G. Evans and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the practical introduction to the analytical approach taken in Volume 2. Based upon courses in partial differential equations over the last two decades, the text covers the classic canonical equations, with the method of separation of variables introduced at an early stage. The characteristic method for first order equations acts as an introduction to the classification of second order quasi-linear problems by characteristics. Attention then moves to different co-ordinate systems, primarily those with cylindrical or spherical symmetry. Hence a discussion of special functions arises quite naturally, and in each case the major properties are derived. The next section deals with the use of integral transforms and extensive methods for inverting them, and concludes with links to the use of Fourier series.

Download or read book Photovoltaic Solar Energy written by Angèle Reinders and published by John Wiley & Sons. This book was released on 2017-02-06 with total page 755 pages. Available in PDF, EPUB and Kindle. Book excerpt: Solar PV is now the third most important renewable energy source, after hydro and wind power, in terms of global installed capacity. Bringing together the expertise of international PV specialists Photovoltaic Solar Energy: From Fundamentals to Applications provides a comprehensive and up-to-date account of existing PV technologies in conjunction with an assessment of technological developments. Key features: Written by leading specialists active in concurrent developments in material sciences, solar cell research and application-driven R&D. Provides a basic knowledge base in light, photons and solar irradiance and basic functional principles of PV. Covers characterization techniques, economics and applications of PV such as silicon, thin-film and hybrid solar cells. Presents a compendium of PV technologies including: crystalline silicon technologies; chalcogenide thin film solar cells; thin-film silicon based PV technologies; organic PV and III-Vs; PV concentrator technologies; space technologies and economics, life-cycle and user aspects of PV technologies. Each chapter presents basic principles and formulas as well as major technological developments in a contemporary context with a look at future developments in this rapidly changing field of science and engineering. Ideal for industrial engineers and scientists beginning careers in PV as well as graduate students undertaking PV research and high-level undergraduate students.

Download or read book Flash Memory Devices written by Cristian Zambelli and published by Mdpi AG. This book was released on 2022-02-10 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: Flash memory devices have represented a breakthrough in storage since their inception in the mid-1980s, and innovation is still ongoing. The peculiarity of such technology is an inherent flexibility in terms of performance and integration density according to the architecture devised for integration. The NOR Flash technology is still the workhorse of many code storage applications in the embedded world, ranging from microcontrollers for automotive environment to IoT smart devices. Their usage is also forecasted to be fundamental in emerging AI edge scenario. On the contrary, when massive data storage is required, NAND Flash memories are necessary to have in a system. You can find NAND Flash in USB sticks, cards, but most of all in Solid-State Drives (SSDs). Since SSDs are extremely demanding in terms of storage capacity, they fueled a new wave of innovation, namely the 3D architecture. Today "3D" means that multiple layers of memory cells are manufactured within the same piece of silicon, easily reaching a terabit capacity. So far, Flash architectures have always been based on "floating gate," where the information is stored by injecting electrons in a piece of polysilicon surrounded by oxide. On the contrary, emerging concepts are based on "charge trap" cells. In summary, flash memory devices represent the largest landscape of storage devices, and we expect more advancements in the coming years. This will require a lot of innovation in process technology, materials, circuit design, flash management algorithms, Error Correction Code and, finally, system co-design for new applications such as AI and security enforcement.

Download or read book Parasitic Substrate Coupling in High Voltage Integrated Circuits written by Pietro Buccella and published by Springer. This book was released on 2018-03-14 with total page 195 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces a new approach to model and predict substrate parasitic failures in integrated circuits with standard circuit design tools. The injection of majority and minority carriers in the substrate is a recurring problem in smart power ICs containing high voltage, high current switching devices besides sensitive control, protection and signal processing circuits. The injection of parasitic charges leads to the activation of substrate bipolar transistors. This book explores how these events can be evaluated for a wide range of circuit topologies. To this purpose, new generalized devices implemented in Verilog-A are used to model the substrate with standard circuit simulators. This approach was able to predict for the first time the activation of a latch-up in real circuits through post-layout SPICE simulation analysis. Discusses substrate modeling and circuit-level simulation of parasitic bipolar device coupling effects in integrated circuits; Includes circuit back-annotation of the parasitic lateral n-p-n and vertical p-n-p bipolar transistors in the substrate; Uses Spice for simulation and characterization of parasitic bipolar transistors, latch-up of the parasitic p-n-p-n structure, and electrostatic discharge (ESD) protection devices; Offers design guidelines to reduce couplings by adding specific protections.

Download or read book Advanced Computer and Communication Engineering Technology written by Hamzah Asyrani Sulaiman and published by Springer. This book was released on 2014-11-01 with total page 1063 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers diverse aspects of advanced computer and communication engineering, focusing specifically on industrial and manufacturing theory and applications of electronics, communications, computing and information technology. Experts in research, industry, and academia present the latest developments in technology, describe applications involving cutting-edge communication and computer systems and explore likely future directions. In addition, access is offered to numerous new algorithms that assist in solving computer and communication engineering problems. The book is based on presentations delivered at ICOCOE 2014, the 1st International Conference on Communication and Computer Engineering. It will appeal to a wide range of professionals in the field, including telecommunication engineers, computer engineers and scientists, researchers, academics and students.