Download or read book Internal Photoemission Spectroscopy written by Valeri V. Afanas'ev and published by Elsevier. This book was released on 2014-02-22 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces in novel materials are covered as well. Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. First complete model description of the internal photoemission phenomena Overview of the most reliable energy barrier determination procedures and trap characterization methods Overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces with semiconductors and metals
Download or read book Internal Photoemission Spectroscopy written by Valeri V. Afanas'ev and published by Elsevier. This book was released on 2010-07-07 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the conventional external photoemission spectroscopy by analysing interfaces separated from the sample surface by a layer of a different solid or liquid. IPE is providing the most straightforward and, therefore, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method provides the unique capability of analysing the heterostructures relevant to the modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. In addition to the discussion of fundamental physical and technical aspects of IPE spectroscopic applications, several “hot topics are addressed. These include development of new insulating materials for advances Si MOS technology (both high-k gate insulators and low-k dielectrics for interconnect insulation), metal gate materials, development of heterostructures based on high-mobility semiconductors, etc. Thanks to a considerable activity in this field over the last few years, the recent results concerning band structure of most important interfaces involving novel materials can now be documented. - First complete description of the internal photoemission phenomena - A practical guide to internal photoemission measurements - Describes reliable energy barrier determination procedures - Surveys trap spectroscopy methods applicable to thin insulating layers - Provides an overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces - Contains a complete collection of reference data on interface band alignment for wide-bandgap insulating materials in contact with metals and semiconductors
Download or read book Hard X ray Photoelectron Spectroscopy HAXPES written by Joseph Woicik and published by Springer. This book was released on 2015-12-26 with total page 571 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides the first complete and up-to-date summary of the state of the art in HAXPES and motivates readers to harness its powerful capabilities in their own research. The chapters are written by experts. They include historical work, modern instrumentation, theory and applications. This book spans from physics to chemistry and materials science and engineering. In consideration of the rapid development of the technique, several chapters include highlights illustrating future opportunities as well.
Download or read book Quantitative Core Level Photoelectron Spectroscopy written by Juan A Colón Santana and published by Morgan & Claypool Publishers. This book was released on 2016-01-01 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photoemission (also known as photoelectron) spectroscopy refers to the process in which an electron is removed from a specimen after the atomic absorption of a photon. The first evidence of this phenomenon dates back to 1887 but it was not until 1905 that Einstein offered an explanation of this effect, which is now referred to as ""the photoelectric effect"". Quantitative Core Level Photoelectron Spectroscopy: A Primer tackles the pragmatic aspects of the photoemission process with the aim of introducing the reader to the concepts and instrumentation that emerge from an experimental approach. The basic elements implemented for the technique are discussed and the geometry of the instrumentation is explained. The book covers each of the features that have been observed in the X-ray photoemission spectra and provides the tools necessary for their understanding and correct identification. Charging effects are covered in the penultimate chapter with the final chapter bringing closure to the basic uses of the X-ray photoemission process, as well as guiding the reader through some of the most popular applications used in current research.
Download or read book Metrology and Diagnostic Techniques for Nanoelectronics written by Zhiyong Ma and published by CRC Press. This book was released on 2017-03-27 with total page 843 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronics is changing the way the world communicates, and is transforming our daily lives. Continuing Moore’s law and miniaturization of low-power semiconductor chips with ever-increasing functionality have been relentlessly driving R&D of new devices, materials, and process capabilities to meet performance, power, and cost requirements. This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in semiconductor R&D and manufacturing. It is a complete guide for metrology and diagnostic techniques essential for process technology, electronics packaging, and product development and debugging—a unique approach compared to other books. The authors are from academia, government labs, and industry and have vast experience and expertise in the topics presented. The book is intended for all those involved in IC manufacturing and nanoelectronics and for those studying nanoelectronics process and assembly technologies or working in device testing, characterization, and diagnostic techniques.
Download or read book Photoelectron Spectroscopy written by Stephan Hüfner and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: The author, S. Hüfner, presents an authoritative and up-to-date introduction to the field by comprehensively treating the electronic structures of atoms, molecules, solids, and surfaces. Brief descriptions are given of inverse photoemission, spin-polarized photoemission and photoelectron diffraction. Experimental aspects are considered throughout the third edition book and the results are carefully interpreted in terms of the theory. A wealth of measured data is presented in tabulator form for easy use by experimentalists. The reader will learn about the basic technique of photoemission spectroscopy and obtain the necessary background for work based on this book.
Download or read book Photoelectron Spectroscopy written by Stefan Hüfner and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date introduction to the field, treating in depth the electronic structures of atoms, molecules, solids and surfaces, together with brief descriptions of inverse photoemission, spin-polarized photoemission and photoelectron diffraction. Experimental aspects are considered throughout and the results carefully interpreted by theory. A wealth of measured data is presented in tabullar for easy use by experimentalists.
Download or read book High k Gate Dielectrics for CMOS Technology written by Gang He and published by John Wiley & Sons. This book was released on 2012-08-10 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.
Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Download or read book The MOS System written by Olof Engström and published by Cambridge University Press. This book was released on 2014-09-25 with total page 369 pages. Available in PDF, EPUB and Kindle. Book excerpt: This detailed and up-to-date guide to modern MOS structures describes important tools, cutting-edge models, novel phenomena and current challenges in measuring and improving the control of future MOS systems for transistor channels. Building up from basic electrostatics, it introduces the ideal MOS system, physical and electrical properties of high-k oxides, their dielectric constants, and energy offsets to semiconductors and metals, before moving on to electrical and physical characterization methods for high-k dielectric materials. Finally, real MOS systems are introduced: high-k dielectrics and interlayers, the influence of phonon dynamics, interface states and bulk traps, effective metal work functions, gate leakage phenomena and high mobility channel materials. Abstract concepts are supported by practical examples and critical comparison, encouraging an intuitive understanding of the principles at work, and presented alongside recent theoretical and experimental results, making this the ideal companion for researchers, graduate students and industrial development engineers working in nanoelectronics.
Download or read book Electronic Properties of Semiconductor Interfaces written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Download or read book Optical Diagnostics for Thin Film Processing written by Irving P. Herman and published by Elsevier. This book was released on 1996-10-23 with total page 815 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume describes the increasing role of in situ optical diagnostics in thin film processing for applications ranging from fundamental science studies to process development to control during manufacturing. The key advantage of optical diagnostics in these applications is that they are usually noninvasive and nonintrusive. Optical probes of the surface, film, wafer, and gas above the wafer are described for many processes, including plasma etching, MBE, MOCVD, and rapid thermal processing. For each optical technique, the underlying principles are presented, modes of experimental implementation are described, and applications of the diagnostic in thin film processing are analyzed, with examples drawn from microelectronics and optoelectronics. Special attention is paid to real-time probing of the surface, to the noninvasive measurement of temperature, and to the use of optical probes for process control. Optical Diagnostics for Thin Film Processing is unique. No other volume explores the real-time application of optical techniques in all modes of thin film processing. The text can be used by students and those new to the topic as an introduction and review of the subject. It also serves as a comprehensive resource for engineers, technicians, researchers, and scientists already working in the field. The only volume that comprehensively explores in situ, real-time, optical probes for all types of thin film processing Useful as an introduction to the subject or as a resource handbook Covers a wide range of thin film processes including plasma etching, MBE, MOCVD, and rapid thermal processing Examples emphasize applications in microelectronics and optoelectronics Introductory chapter serves as a guide to all optical diagnostics and their applications Each chapter presents the underlying principles, experimental implementation, and applications for a specific optical diagnostic
Download or read book The MOS System written by Olof Engström and published by Cambridge University Press. This book was released on 2014-09-25 with total page 369 pages. Available in PDF, EPUB and Kindle. Book excerpt: A detailed, up-to-date guide to modern MOS structures, describing key tools, cutting-edge models, novel phenomena and challenges for future development. Abstract concepts are supported by practical examples and presented alongside recent theoretical and experimental results. An ideal companion for researchers, graduate students and industrial development engineers.
Download or read book NBS Special Publication written by and published by . This book was released on 1968 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Publications written by United States. National Bureau of Standards and published by . This book was released on 1978 with total page 788 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book New Research on Silicon written by Vitalyi Igorevich Talanin and published by BoD – Books on Demand. This book was released on 2017-05-31 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: The knowledge of fundamental silicon questions and all aspects of silicon technology gives the possibility of improvement to both initial silicon material and devices on silicon basis. The articles for this book have been contributed by the much respected researchers in this area and cover the most recent developments and applications of silicon technology and some fundamental questions. This book provides the latest research developments in important aspects of silicon including nanoclusters, solar silicon, porous silicon, some technological processes, and silicon devices and also fundamental question about silicon structural perfection. This book is of interest both to fundamental research and to practicing scientists and also will be useful to all engineers and students in industry and academia.
Download or read book Publications of the National Bureau of Standards Catalog written by United States. National Bureau of Standards and published by . This book was released on 1978 with total page 788 pages. Available in PDF, EPUB and Kindle. Book excerpt:
