Download or read book Development and Characterization of Plasma Etching Processes for the Dimensional Control and LWR Issues During High k Metal Gate Stack Patterning for 14FDSOI Technologies written by Onintza Ros Bengoetxea and published by . This book was released on 2016 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In a transistor manufacturing process, patterning is one of the hardest stages to control. Along with downscaling, the specifications for a transistor manufacturing have tightened up to the nanometer scale. Extreme metrology and process control are required and Critical Dimension Uniformity (CDU) and Line Width Roughness (LWR) have become two of the most important parameters to control.So far, to meet the requirements of the latest CMOS technologies, post-lithography treatments such as plasma cure treatments have been introduced to increase photo-resist stability and to improve LWR prior to pattern transfer. However, conventional post-lithography treatments are no more efficient to address the specifications of14nm gate patterning where more complicated designs are involved.In this work, we have studied limitations of cure pretreatments in 2D gate integrations. In fact, the HBr plasma post-lithography treatment was identified as being responsible of a local pattern shifting that result in a loss of the device's electrical performance. Preliminary results show that, cure step removal helps to control pattern shifting but to the detriment of the LWR. Indeed, if no cure treatment is introduced in the gate patterning process flow, photoresist patterns undergo severe stress during the subsequent Si-ARC plasma etching in fluorocarbon based plasmas. In this work, the mechanisms that drive such resist degradation in fluorocarbon plasmas have been studied and improved SiARC etch process condition shave been proposed. Besides, we evaluate how the state-of-art gate etch process can be improved, by investigating the impact of each plasma etching step involved in the high-K metal gate patterning on both LWR and gate shifting. The goal of this study is to determine if the TiN metal gate roughness can be modified by changing the gate etch process conditions. Our research reveals that addition of N2 flash steps prevents from gate profile degradation and sidewall roughening. In revenge, the TiN microstructure as well as the HKMG etch process has no impact on the gate final roughness. The hard mask patterning process remains the main contributor for gate roughening.
Download or read book Miniaturized Transistors written by Lado Filipovic and published by MDPI. This book was released on 2019-06-24 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.
Download or read book Plasma Etching Processes for CMOS Devices Realization written by Nicolas Posseme and published by Elsevier. This book was released on 2017-01-25 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent. Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography. This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization. Helps readers discover the master technology used to pattern complex structures involving various materials Explores the capabilities of cold plasmas to generate well controlled etched profiles and high etch selectivities between materials Teaches users how etch compensation helps to create devices that are smaller than 20 nm
Download or read book Plasma Etching Processes for Sub quarter Micron Devices written by G. S. Mathad and published by The Electrochemical Society. This book was released on 2000 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Etching Processes for Interconnect Realization in VLSI written by Nicolas Posseme and published by Elsevier. This book was released on 2015-04-14 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first of two books presenting the challenges and future prospects of plasma etching processes for microelectronics, reviewing the past, present and future issues of etching processes in order to improve the understanding of these issues through innovative solutions.This book focuses on back end of line (BEOL) for high performance device realization and presents an overview of all etch challenges for interconnect realization as well as the current etch solutions proposed in the semiconductor industry. The choice of copper/low-k interconnect architecture is one of the keys for integrated circuit performance, process manufacturability and scalability. Today, implementation of porous low-k material is mandatory in order to minimize signal propagation delay in interconnections. In this context, the traditional plasma process issues (plasma-induced damage, dimension and profile control, selectivity) and new emerging challenges (residue formation, dielectric wiggling) are critical points of research in order to control the reliability and reduce defects in interconnects. These issues and potential solutions are illustrated by the authors through different process architectures available in the semiconductor industry (metallic or organic hard mask strategies). Presents the difficulties encountered for interconnect realization in very large-scale integrated (VLSI) circuits Focused on plasma-dielectric surface interaction Helps you further reduce the dielectric constant for the future technological nodes
Download or read book Characterization and Modeling of Plasma Etch Pattern Dependencies in Integrated Circuits written by Kwaku O. Abrokwah and published by . This book was released on 2006 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: A quantitative model capturing pattern dependent effects in plasma etching of integrated circuits (ICs) is presented. Plasma etching is a key process for pattern formation in IC manufacturing. Unfortunately, pattern dependent non-uniformities arise in plasma etching due to microloading and RIE lag. This thesis contributes a semi-empirical methodology for capturing and modeling microloading, RIE lag, and related pattern dependent effects. We apply this methodology to the study of interconnect trench etching, and show that an integrated model is able to predict both pattern density and feature size dependent non-uniformities in trench depth. Previous studies of variation in plasma etching have characterized microloading (due to pattern density), and RIE lag (aspect ratio dependent etching or ARDE) as distinct causes of etch non-uniformity for individual features. In contrast to these previous works, we present here a characterization and computational methodology for predicting IC etch variation on a chip scale that integrates both layout pattern density and feature scale or ARDE dependencies. The proposed integrated model performs well in predicting etch variation as compared to a pattern density only or feature scale only model.
Download or read book Introduction to Implicit Surfaces written by Jules Bloomenthal and published by Morgan Kaufmann. This book was released on 1997-08 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: Implicit surfaces offer special effects animators, graphic designers, CAD engineers, graphics students, and hobbyists a new range of capabilities for the modeling of complex geometric objects. In contrast to traditional parametric surfaces, implicit surfaces can easily describe smooth, intricate, and articulatable shapes. These powerful yet easily understood surfaces are finding use in a growing number of graphics applications. This comprehensive introduction develops the fundamental concepts and techniques of implicit surface modeling, rendering, and animating in terms accessible to anyone with a basic background in computer graphics. + provides a thorough overview of implicit surfaces with a focus on their applications in graphics + explains the best methods for designing, representing, and visualizing implicit surfaces + surveys the latest research With contributions from seven graphics authorities, this innovative guide establishes implicit surfaces as a powerful and practical tool for animation and rendering.
Download or read book Enablers for Smart Cities written by Amal El Fallah Seghrouchni and published by John Wiley & Sons. This book was released on 2016-07-18 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt: Smart cities are a new vision for urban development. They integrate information and communication technology infrastructures – in the domains of artificial intelligence, distributed and cloud computing, and sensor networks – into a city, to facilitate quality of life for its citizens and sustainable growth. This book explores various concepts for the development of these new technologies (including agent-oriented programming, broadband infrastructures, wireless sensor networks, Internet-based networked applications, open data and open platforms), and how they can provide smart services and enablers in a range of public domains. The most significant research, both established and emerging, is brought together to enable academics and practitioners to investigate the possibilities of smart cities, and to generate the knowledge and solutions required to develop and maintain them.
Download or read book Overlay Networks written by Sasu Tarkoma and published by CRC Press. This book was released on 2010-02-09 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: With their ability to solve problems in massive information distribution and processing, while keeping scaling costs low, overlay systems represent a rapidly growing area of R&D with important implications for the evolution of Internet architecture. Inspired by the author's articles on content based routing, Overlay Networks: Toward Information
Download or read book Nanoscale Calibration Standards and Methods written by Günter Wilkening and published by John Wiley & Sons. This book was released on 2005-07-01 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: The quantitative determination of the properties of micro- and nanostructures is essential in research and development. It is also a prerequisite in process control and quality assurance in industry. The knowledge of the geometrical dimensions of structures in most cases is the base, to which other physical and chemical properties are linked. Quantitative measurements require reliable and stable instruments, suitable measurement procedures as well as appropriate calibration artefacts and methods. The seminar "NanoScale 2004" (6th Seminar on Quantitative Microscopy and 2nd Seminar on Nanoscale Calibration Standards and Methods) at the National Metrology Institute (Physikalisch-Technische Bundesanstalt PTB), Braunschweig, Germany, continues the series of seminars on Quantitative Microscopy. The series stimulates the exchange of information between manufacturers of relevant hard- and software and the users in science and industry. Topics addressed in these proceedings are a) the application of quantitative measurements and measurement problems in: microelectronics, microsystems technology, nano/quantum/molecular electronics, chemistry, biology, medicine, environmental technology, materials science, surface processing b) calibration & correction methods: calibration methods, calibration standards, calibration procedures, traceable measurements, standardization, uncertainty of measurements c) instrumentation and methods: novel/improved instruments and methods, reproducible probe/sample positioning, position-measuring systems, novel/improved probe/detector systems, linearization methods, image processing
Download or read book 2019 IEEE SOI 3D Subthreshold Microelectronics Technology Unified Conference S3S written by IEEE Staff and published by . This book was released on 2019-10-14 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: SOI, 3D Integration, Low Voltage Devices and Low Power Circuits
Download or read book Digitally Assisted Analog and Analog Assisted Digital IC Design written by Xicheng Jiang and published by Cambridge University Press. This book was released on 2015-07-23 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discover cutting-edge techniques for next-generation integrated circuit design, and learn how to deliver improved speed, density, power, and cost.
Download or read book Guide to Organic Reactions written by Howard D. Weiss and published by . This book was released on 1970 with total page 253 pages. Available in PDF, EPUB and Kindle. Book excerpt:
