Download or read book A Study of the Growth Dynamics of Si and Ge Films During Gas Source Molecular Beam Epitaxy written by and published by . This book was released on 1994 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth of Si and Si 1 x Ge x Thin Films Using Gas Source Molecular Beam Epitaxy written by and published by . This book was released on 1993 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Newnes. This book was released on 2012-12-31 with total page 745 pages. Available in PDF, EPUB and Kindle. Book excerpt: This multi-contributor handbook discusses Molecular Beam Epitaxy (MBE), an epitaxial deposition technique which involves laying down layers of materials with atomic thicknesses on to substrates. It summarizes MBE research and application in epitaxial growth with close discussion and a 'how to' on processing molecular or atomic beams that occur on a surface of a heated crystalline substrate in a vacuum.MBE has expanded in importance over the past thirty years (in terms of unique authors, papers and conferences) from a pure research domain into commercial applications (prototype device structures and more at the advanced research stage). MBE is important because it enables new device phenomena and facilitates the production of multiple layered structures with extremely fine dimensional and compositional control. The techniques can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. This book covers the advances made by MBE both in research and mass production of electronic and optoelectronic devices. It includes new semiconductor materials, new device structures which are commercially available, and many more which are at the advanced research stage. - Condenses fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Coverage of MBE as mass production epitaxial technology enhances processing efficiency and throughput for semiconductor industry and nanostructured semiconductor materials research community
Download or read book H Mediated Film Growth and Dopant Incorporation Kinetics During Silicon Germanium 001 boron Gas Source Molecular Beam Epitaxy written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Download or read book Gas Source Molecular Beam Epitaxy of Si SiGe and Selective Area Epitaxy for Investigation of Facet Growth in Group IV Heterostructures written by Gregory David U'Ren and published by . This book was released on 1998 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dynamics written by and published by Elsevier. This book was released on 2008-10-09 with total page 1037 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume of the Handbook of Surface Science covers all aspects of the dynamics of surface processes. Two dozen world leading experts in this field address the subjects of energy exchange in gas atoms, surface collisions, the rules governing dissociative adsorption on surfaces, the formation of nanostructures on surfaces by self-assembly, and the study of surface phenomena using ultra-fast lasers. The chapters are written for both newcomers to the field as well as researchers.• Covers all aspects of the dynamics of surface processes • Provides understanding of this unique field utilizing a multitude of accurate experiments and advanced microscopic theory that allows quantum-level comparisons • Presents the concepts and tools relevant beyond surface science for catalysis, nanotechnology, biology, medicine, and materials
Download or read book Growth of Si SiGe and Selective Epitaxy by Gas Source Molecular Beam Epitaxy written by Kinam Kim and published by . This book was released on 1994 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of Thin Si Ge Films Grown by Molecular Beam Epitaxy written by Vincent Paul Arbet-Engels and published by . This book was released on 1989 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy written by John Condon Bean and published by . This book was released on 1988 with total page 682 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Kinetic Studies of Growth of Si and SiGe Thin Films written by Yongjun Zheng and published by . This book was released on 2000 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 974 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Surface Diffusion written by M.C. Tringides and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 701 pages. Available in PDF, EPUB and Kindle. Book excerpt: The interest in the problem of surface diffusion has been steadily growing over the last fifteen years. This is clearly evident from the increase in the number of papers dealing with the problem, the development of new experimental techniques, and the specialized sessions focusing on diffusion in national and international meetings. Part of the driving force behind this increasing activity is our recently acquired ability to observe and possibly control atomic scale phenomena. It is now possible to look selectively at individual atomistic processes and to determine their relative importance during growth and reactions at surfaces. The number of researchers interested in this problem also has been growing steadily which generates the need for a good reference source to farniliarize newcomers to the problem. While the recent emphasis is on the role of diffusion during growth, there is also continuing progress on the more traditional aspects of the problem describing mass transport in an ensemble of particles. Such a description is based on the statistical mechanical analysis of a collection of particles that mutually interact and develop correlations. An average over the multitude of atomistic processes that operate under these conditions is necessary to fully describe the dynamics in the system.
Download or read book Photonics and Electronics with Germanium written by Kazumi Wada and published by John Wiley & Sons. This book was released on 2015-05-06 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt: Representing a further step towards enabling the convergence of computing and communication, this handbook and reference treats germanium electronics and optics on an equal footing. Renowned experts paint the big picture, combining both introductory material and the latest results. The first part of the book introduces readers to the fundamental properties of germanium, such as band offsets, impurities, defects and surface structures, which determine the performance of germanium-based devices in conjunction with conventional silicon technology. The second part covers methods of preparing and processing germanium structures, including chemical and physical vapor deposition, condensation approaches and chemical etching. The third and largest part gives a broad overview of the applications of integrated germanium technology: waveguides, photodetectors, modulators, ring resonators, transistors and, prominently, light-emitting devices. An invaluable one-stop resource for both researchers and developers.
Download or read book Semiconductor Physics written by Karl W. Böer and published by Springer Nature. This book was released on 2023-02-02 with total page 1408 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook gives a complete and detailed survey of the field of semiconductor physics. It addresses every fundamental principle, the most important research topics and results, as well as conventional and emerging new areas of application. Additionally it provides all essential reference material on crystalline bulk, low-dimensional, and amorphous semiconductors, including valuable data on their optical, transport, and dynamic properties. This updated and extended second edition includes essential coverage of rapidly advancing areas in semiconductor physics, such as topological insulators, quantum optics, magnetic nanostructures and spintronic systems. Richly illustrated and authored by a duo of internationally acclaimed experts in solar energy and semiconductor physics, this handbook delivers in-depth treatment of the field, reflecting a combined experience spanning several decades as both researchers and educators. Offering a unique perspective on many issues, Semiconductor Physics is an invaluable reference for physicists, materials scientists and engineers throughout academia and industry.
