Download or read book Tunnelling Spectroscopy in GaAs AlGaAs Double Quantum Well Devices written by Neil Turner and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Intersubband Transitions in Quantum Wells written by Emmanuel Rosencher and published by Springer Science & Business Media. This book was released on 1992 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: Some 30 lectures consider phenomena associated with electrical charges passing through very thin (less than 15 nm) layers of semiconductor material. The optical nonlinearities that result have application in the electronic-devices industry, and provide a real-life example of theoretical one-dimensio"
Download or read book Resonant Tunneling in Semiconductors written by L.L. Chang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.
Download or read book Physics of Quantum Electron Devices written by Federico Capasso and published by Springer Science & Business Media. This book was released on 2013-03-07 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ability to engineer the bandstructure and the wavefunction over length scales previously inaccessible to technology using artificially structured materials and nanolithography has led to a new class of electron semiconductor devices whose operation is controlled by quantum effects. These structures not only represent exciting tools for investigating new quantum phenomena in semiconductors, but also offer exciting opportunities for applications. This book gives the first comprehensive treatment of the physics of quantum electron devices. This interdisciplinary field, at the junction between material science, physics and technology, has witnessed an explosive growth in recent years. This volume presents a detailed coverage of the physics of the underlying phenomena, and their device and circuit applications, together with fabrication and growth technology.
Download or read book Numerical Exploration of Isolated GaAs AlGaAs Quantum Well written by Sujaul Chowdhury and published by Springer Nature. This book was released on with total page 97 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of III V Quantum Wells and Superlattices written by P. K. Bhattacharya and published by IET. This book was released on 1996 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.
Download or read book Quantum Well Intersubband Transition Physics and Devices written by Hui C. Liu and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: Intersubband transitions in quantum wells have attracted tremendous attention in recent years, mainly due to the promise of applications in the mid and far-infrared regions (2--20 mum). Many of the papers presented in Quantum Well Intersubband Transition Physics and Devices are on the basic linear intersubband transition processes, detector physics and detector application, reflecting the current state of understanding and detector applications, where highly uniform, large focal plane arrays have been demonstrated. Other areas are still in their early stages, including infrared modulation, harmonic generation and emission.
Download or read book Physics of Quantum Well Devices written by B.R. Nag and published by Springer Science & Business Media. This book was released on 2001-11-30 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book deals with the physics, operating principles and characteristics of the important quantum well devices, namely, the High Electron Mobility Transistor (HEMT), Resonant Tunneling Diode (RTD), Quantum Well Laser (QWL), Quantum Well Infrared Photodetector (QWIP), Modulator and Switch. The basic physical concepts on which these devices are based are discussed in detail with necessary diagrams and mathematical derivations. The growth of heterostructures, theories and experiments on band offset, theories and experimental results on electron states, optical interaction phenomena, and electron transport are discussed as the background material. Practical aspects and up-to-date developments and applications of the devices are also covered. This book will be of interest to researchers and specialists in the field of Solid State Technology, Optics and Optoelectronics. It can also serve as a textbook for graduate students and new entrants in the exciting field of quantum electronics. This book takes the reader from the introductory stage to the advanced level of the construction, principles of operation, and application of these devices.
Download or read book Quantum Dot Devices written by Zhiming M. Wang and published by Springer Science & Business Media. This book was released on 2012-05-24 with total page 375 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum dots as nanomaterials have been extensively investigated in the past several decades from growth to characterization to applications. As the basis of future developments in the field, this book collects a series of state-of-the-art chapters on the current status of quantum dot devices and how these devices take advantage of quantum features. Written by 56 leading experts from 14 countries, the chapters cover numerous quantum dot applications, including lasers, LEDs, detectors, amplifiers, switches, transistors, and solar cells. Quantum Dot Devices is appropriate for researchers of all levels of experience with an interest in epitaxial and/or colloidal quantum dots. It provides the beginner with the necessary overview of this exciting field and those more experienced with a comprehensive reference source.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1992 with total page 812 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low dimensional Semiconductors written by M. J. Kelly and published by Clarendon Press. This book was released on 1995-11-23 with total page 569 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text is a first attempt to pull together the whole of semiconductor science and technology since 1970 in so far as semiconductor multilayers are concerned. Material, technology, physics and device issues are described with approximately equal emphasis, and form a single coherant point of view. The subject matter is the concern of over half of today's active semiconductor scientists and technologists, the remainder working on bulk semiconductors and devices. It is now routine to design and the prepare semiconductor multilayers at a time, with independent control over the dropping and composition in each layer. In turn these multilayers can be patterned with features that as a small as a few atomic layers in lateral extent. The resulting structures open up many new ares of exciting solid state and quantum physics. They have also led to whole new generations of electronic and optoelectronic devices whose superior performance relates back to the multilayer structures. The principles established in the field have several decades to go, advancing towards the ultimate of materials engineering, the design and preparation of solids atom by atom. The book should appeal equally to physicists, electronic engineers and materials scientists.
Download or read book Spectroscopy of Nonequilibrium Electrons and Phonons written by C.V. Shank and published by Elsevier. This book was released on 2012-12-02 with total page 513 pages. Available in PDF, EPUB and Kindle. Book excerpt: The physics of nonequilibrium electrons and phonons in semiconductors is an important branch of fundamental physics that has many practical applications, especially in the development of ultrafast and ultrasmall semiconductor devices. This volume is devoted to different trends in the field which are presently at the forefront of research. Special attention is paid to the ultrafast relaxation processes in bulk semiconductors and two-dimensional semiconductor structures, and to their study by different spectroscopic methods, both pulsed and steady-state. The evolution of energy and space distribution of nonequilibrium electrons and the relaxation kinetics of hot carriers and phonons are considered under various conditions such as temperature, doping and pumping intensity by leading experts in the field.
Download or read book Physics and Modeling of Tera and Nano devices written by Maxim Ryzhii and published by World Scientific. This book was released on 2008 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: Physics and Modeling of Tera- and Nano-Devices is a compilation of papers by well-respected researchers working in the field of physics and modeling of novel electronic and optoelectronic devices. The topics covered include devices based on carbon nanotubes, generation and detection of terahertz radiation in semiconductor structures including terahertz plasma oscillations and instabilities, terahertz photomixing in semiconductor heterostructures, spin and microwave-induced phenomena in low-dimensional systems, and various computational aspects of device modeling. Researchers as well as graduate and postgraduate students working in this field will benefit from reading this book.
Download or read book Ultrafast Phenomena VII written by Charles B. Harris and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 567 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent improvements in the performance of light sources, i.e. reduction in pulse length and increases in wavelength range and power levels, have led to ultrafast technology becoming a basic tool in a wide variety of scientific fields. This book describes the remarkable technological improvements and results of new applications in the natural sciences and various engineering fields.
Download or read book Laser Optics of Condensed Matter written by E. Garmire and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 431 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Fourth USA-USSR Symposium. on The Physics of Optical Phenomena and Their Use as Probes of Matter, was held in Irvine, California, January 23-27, 1990. Participating in the Symposium were 22 scientists from the USSR and 29 from the USA. In addition, to provide an international dimension to this Symposium without, however, compromising significantly its essentially binational character, 7 non-US and non-USSR scientists were invited to take part in it. The present volume is the proceedings of that Symposium, and contains all manuscripts received prior to August 1, 1990, representing. scientific contributions presented. A few manuscripts were not received, but for completeness the corresponding abstract is printed.. Three previous USA/USSR Binational Symposia on related topics have been held, viz. "Theory of Light Scattering in Condensed Matter" (Moscow, 1975), "Light Scattering in Solids" (New York, 1979), and "Laser Optics of Condensed Matter" (Leningrad, 1987). These meetings were evaluated by the participants as highly successful and provided invaluable oppor tunities for researchers to exchange information and to initiate colla borative work which led to research visits by US physicist to Soviet laboratories, and vice versa, and which continue to the present day.
Download or read book Physics of Semiconductor Devices written by Simon M. Sze and published by John Wiley & Sons. This book was released on 2021-03-24 with total page 944 pages. Available in PDF, EPUB and Kindle. Book excerpt: The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices Offers completely updated and revised information that reflects advances in device concepts, performance, and application Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.
