Download or read book The Electrical Properties of Polycrystalline Silicon written by Steven Joseph Schaefer and published by . This book was released on 1975 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Properties of Polycrystalline Silicon written by Matts Rydberg and published by . This book was released on 1999 with total page 49 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Physical and Electrical Properties of Polycrystalline silicon written by Mohammad Mahmoud Mandurah and published by . This book was released on 1981 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Effect of grain boundaries on electrical properties of polycrystalline silicon written by Shubneesh Batra and published by . This book was released on 1989 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modeling and Analysis of Electrical Properties of Polycrystalline Silicon Films written by Yunsheng Wang and published by . This book was released on 1990 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Material and Electrical Properties of Polycrystalline Silicon for Photovoltaic Applications written by Wendy Ann Orr and published by . This book was released on 1980 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical and Electrical Properties of Grain Boundaries in Polycrystalline Silicon written by Phillip Eugene Russell and published by Sagwan Press. This book was released on 2018-02-07 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work. This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work. As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.

Download or read book Chemical and Electrical Properties of Grain Boundaries in Polycrystalline Silicon Primary Source Edition written by Phillip Eugene Russell and published by Nabu Press. This book was released on 2013-10-01 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a reproduction of a book published before 1923. This book may have occasional imperfections such as missing or blurred pages, poor pictures, errant marks, etc. that were either part of the original artifact, or were introduced by the scanning process. We believe this work is culturally important, and despite the imperfections, have elected to bring it back into print as part of our continuing commitment to the preservation of printed works worldwide. We appreciate your understanding of the imperfections in the preservation process, and hope you enjoy this valuable book.

Download or read book Electrical Properties of Polycrystalline Solar Cell Silicon written by Jihong Park and published by . This book was released on 1994 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Thin Film Transistors Polycrystalline silicon thin film transistors written by Yue Kuo and published by Springer Science & Business Media. This book was released on 2004 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.

Download or read book Electrical and Structural Properties of Polycrystalline Silicon written by Joseph William Tringe and published by . This book was released on 1999 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Influence of Grain Boundaries on the Electrical Properties of Polycrystalline silicon Films Progress Report 1980 1981 written by and published by . This book was released on 1981 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Research in 1980/81 was carried out in three areas: (i) electron diffraction experiments on diffusion bonded (welded) boundaries; (ii) combined EBIC and high voltage transmission electron microscopy in order to investigate the correlation between structure and electrical properties and (iii) passivation of the electrical activity of crystal defects with hydrogen. The diffraction experiments did not furnish new information on the structure of grain boundaries in silicon, but were valuable as a check on the previous findings. In addition, they offered the possibility to separate double diffraction effects from boundary scattering. The combined EBIC and HVTEM experiments established (for the first time) unambiguously that coherent twin boundaries per se are not electrically active. The localized electrical activity observed in coherent twin boundaries is due to the presence of intrinsic dislocations, which are partial dislocations of the Schottky type. However, not all partial dislocations studied were electrically active, for reasons which are not completely understood. The combined EBIC and HVTEM investigations showed further (again for the first time) that many of the linear boundaries which were previously assumed to be coherent twin boundaries are second order twins, and that these twins are strongly electrically active. In passivation experiments, it is necessary to separate influence of the heat treatment from those of hydrogen. Passivation reduces the activity of some, but not of all defects. Passivation is particularly effective in reducing the electrical activity of deformation induced dislocations, which conceivably have a different core structure from grown-in dislocations.

Download or read book The Effect of Growth Parameters on the Structure and Electrical Properties of Polycrystalline Silicon Films written by Norfried Klaus Josef Schoop and published by . This book was released on 1978 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Semi insulating Polycrystalline Silicon written by K. M. Brunson and published by . This book was released on 1987 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Polycrystalline Silicon for Integrated Circuits and Displays written by Ted Kamins and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 391 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition presents much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon. By properly understanding the properties of polycrystalline silicon and their relation to the deposition conditions, polysilicon can be designed to ensure optimum device and integrated-circuit performance. Polycrystalline silicon has played an important role in integrated-circuit technology for two decades. It was first used in self-aligned, silicon-gate, MOS ICs to reduce capacitance and improve circuit speed. In addition to this dominant use, polysilicon is now also included in virtually all modern bipolar ICs, where it improves the basic physics of device operation. The compatibility of polycrystalline silicon with subsequent high-temperature processing allows its efficient integration into advanced IC processes. This compatibility also permits polysilicon to be used early in the fabrication process for trench isolation and dynamic random-access-memory (DRAM) storage capacitors. In addition to its integrated-circuit applications, polysilicon is becoming vital as the active layer in the channel of thin-film transistors in place of amorphous silicon. When polysilicon thin-film transistors are used in advanced active-matrix displays, the peripheral circuitry can be integrated into the same substrate as the pixel transistors. Recently, polysilicon has been used in the emerging field of microelectromechanical systems (MEMS), especially for microsensors and microactuators. In these devices, the mechanical properties, especially the stress in the polysilicon film, are critical to successful device fabrication. Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition is an invaluable reference for professionals and technicians working with polycrystalline silicon in the integrated circuit and display industries.

Download or read book Correlation of Grain to grain Electrical Properties with Impurities and Defects in Solar Grade Polycrystalline Silicon written by Indradeep Sen and published by . This book was released on 2002 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: Polycrystalline silicon, solar cells, DLTS, EBIC.

Download or read book Structure and Electrical Properties of Polycrystalline SiGe Thin Films written by Wei Qin and published by . This book was released on 1999 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: