EBookClubs

Read Books & Download eBooks Full Online

EBookClubs

Read Books & Download eBooks Full Online

Book Effects of Radiation on Semiconductors

Download or read book Effects of Radiation on Semiconductors written by Viktor S. Vavilov and published by Springer. This book was released on 2013-12-14 with total page 235 pages. Available in PDF, EPUB and Kindle. Book excerpt: The effects of electromagnetic radiation and high-energy par ticles on semiconductors can be divided into two main processes: (a) the excitation of electrons (the special case is internal ioniza tion, i. e. , the generation of excess charge carriers); and(b) dis turbance of the periodic structure of the crystal, i. e. , the forma tion of "structural radiation defects. " Naturally, investigations of the effects of radiation on semiconductors cannot be considered in isolation. Thus, for example, the problern of "radiation de fects" is part of the generalproblern of crystal lattice defects and the influence of such defects on the processes occurring in semi conductors. The same is true of photoelectric and similar phe nomena where the action of the radiation is only the start of a complex chain of nonequilibrium electronprocesses. Nevertheless, particularly from the point of view of the experimental physicist, the radiation effects discussed in the present book have inter esting features: several types of radiation may produce the same resul t (for example, ionization by photons and by charged particles) or one type of radiation may produce several effects (ionization and radiation -defect formation). The aim of the author was to consider the most typical prob lems. The subjects discussed differ widely from one another in the extent to which they have been investigated.

Book Radiation Effects on Semiconductor Devices

Download or read book Radiation Effects on Semiconductor Devices written by Los Alamos Scientific Laboratory and published by . This book was released on 1961 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Radiation Effects in Advanced Semiconductor Materials and Devices

Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.

Book Radiation Effects in Semiconductors and Semiconductor Devices

Download or read book Radiation Effects in Semiconductors and Semiconductor Devices written by V. S. Vavilov and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Study of the Effects of Radiation on the Electrical and Optical Properties of HgCdTe

Download or read book Study of the Effects of Radiation on the Electrical and Optical Properties of HgCdTe written by Charles E. Mallon and published by . This book was released on 1976 with total page 61 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report presents the results of an experimental and theoretical investigation of the effects of radiation on the optical and electrical properties of the alloy semiconductor HgCdTe. The objective is to obtain sufficient radiation effects data to enable reliable prediction of the radiation response of detectors fabricated from HgCdTe. The previous studies used n-type Hg(0.8)Cd(0.2)Te with extrinsic electron densities on the order of 1.5 x 10 to the 15th power/cc. The present studies differ in that lower-carrier-density material (n

Book Reliability and Radiation Effects in Compound Semiconductors

Download or read book Reliability and Radiation Effects in Compound Semiconductors written by Allan H. Johnston and published by World Scientific. This book was released on 2010 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms. It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.

Book Effects of Gamma Radiation and Low Energy Electrons Beam on Semiconductor Thin Films

Download or read book Effects of Gamma Radiation and Low Energy Electrons Beam on Semiconductor Thin Films written by Mehdi Souli and published by . This book was released on 2023-09-15 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research work has been continuously dedicated by the scientific community to improve or optimize the physical properties of thin films. In this present book, we bring into the attention an important research axis developed in our research group, i.e. the use of irradiation with intense gamma radiation and electron beam energy with the aim to improve and customize the structural, optical, morphological and electrical properties of thin film semiconductors for space and terrestrial photovoltaic applications, dosimetry of ionizing radiation and photocatalysis for the depollution of water contaminated by organic dyes. The number of worldwide scientific contributions and publications in this area of research is considered low compared to other research areas, hence the desire to contribute to developing and enriching this research area of thin film semiconductors. Our work was carried out in collaboration with the National Center for Nuclear Sciences and Technologies (CNSTN) in Tunisia, which owns the industrial equipment for gamma irradiation. An agreement was signed between the LPMC (define LPMC) laboratory and the CNSTN to carry out several gamma irradiation campaigns for several types of materials. Another collaboration was made with the COFICAB industrial company that produces electric cables, which is a subsidiary of the CHAKIRA group, to offer us an electron beam time with their low energy electron accelerator. Irradiation by ionizing radiation is widely used in food preservation to extend their storage or marketing periods and also for the sterilization of medical products. Among the outstanding industrial applications of electron beam irradiation is its use to improve the physical properties of the polymers making up the sheaths of electrical cables. In fact, the electrons emitted by the accelerators entrain free radicals in the polymers, the recombination of which leads to an improvement in their resistance to the high temperature of fires and to harmful solvents. In addition, many research works use irradiation to study the resistance of materials to intense nuclear radiation or to increase their life spans and for certain other materials to strengthen their nuclear waste storage capacities. Hence our motivation to use gamma radiation or electron beam irradiation to try to find improvements in the physical properties of semiconductor thin films used in the photovoltaic field or photocatalysis. Indeed, irradiation could be considered as a powerful tool to modify in a controlled way the electrical, structural, optical and morphological properties of these thin films. The choice of materials was motivated by their role played in optical windows, absorbers or buffer layers, which are commonly used in the new generation of photovoltaic cells. The two families of materials are the transparent conductive oxides (TCO), such as Fe-doped In2O3, and sulfur-based compounds, such as In2S3, Cu2ZnSnS4 and Sm-doped CaSO4. The synthesis and growth of these materials have been developed and optimized in our LPMC laboratory through previous research works. To the best of our knowledge, our work on the irradiation of thin films by gamma radiation of thin films of Cu2ZnSnS4, In2S3 and In2O3 doped with iron and fluorine is novel and the results are of great interest for the scientific community. The main objective of applying irradiation is to systematically control and improve the structural, optical, morphological, or electrical properties of thin films by applying very precise doses of gamma radiation or electron beams. Irradiation can cause structural defects in crystal lattices, generate excitations, change, or transform energy levels or even break atomic bonds, which can be used to tailor the properties of thin film semiconductors for specific applications.

Book Comparison of Neutron and Gamma Radiation Damage in Semiconductors

Download or read book Comparison of Neutron and Gamma Radiation Damage in Semiconductors written by M. N. Robinson and published by . This book was released on 1965 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Report on the Effect of Nuclear Radiation on Semiconductor Materials  first Addendum  to Directorate of Nuclear Systems  Air Research and Development Command

Download or read book Report on the Effect of Nuclear Radiation on Semiconductor Materials first Addendum to Directorate of Nuclear Systems Air Research and Development Command written by L. W. Aukerman and published by . This book was released on 1959 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Theoretical and Experimental Studies Concerning Radiation Damage in Selected Compound Semiconductors

Download or read book Theoretical and Experimental Studies Concerning Radiation Damage in Selected Compound Semiconductors written by Robert K. Willardson and published by . This book was released on 1959 with total page 39 pages. Available in PDF, EPUB and Kindle. Book excerpt: The more recently reported thresholds in Ge, Si, and InSb are too small to explain the number of defects as estimated from the effects of irradiation on the electrical properties of these materials.

Book Radiation Effects in Semiconductors and Semiconducting Devices

Download or read book Radiation Effects in Semiconductors and Semiconducting Devices written by V. S Vavilov and published by . This book was released on 1995-12-31 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Air Force Research Resum  s

Download or read book Air Force Research Resum s written by and published by . This book was released on with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Measurement of Nuclear Radiation with Semiconductor Detectors

Download or read book Measurement of Nuclear Radiation with Semiconductor Detectors written by D. N. Poenaru and published by . This book was released on 1969 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt: CONTENTS - MAIN NOTATIONS - CONTENTS - CHAPTER I. - INTERACTION OF THE NUCLEAR RADIATION WITH MATTER - 1.1. Interaction of heavy charged particles with matter - 1.2. Passage of electrons through matter - 1.3. Interaction processes of gamma and X-rays - 1.4. Interaction processes of neutrons - 1.5. Conclusions - CHAPTER II. - FUNDAMENTAL PROCESSES IN SEMICONDUCTORS AND METALS - 2.1. Schrödinger equation. The particle inside the potential well - 2.2. The hydrogen atom - 2.3. Theory of the periodic system of elements - 2.4. Electrons in crystals - 2.5. Effective mass - 2.6. Energy bands - 2.7. Statistical distributions - 2.8. Equilibrium density of charge carriers in semiconductors - 2.9. Transport phenomena - 2.10. Recombination phenomena - 2.11. P-N junction - 2.12. Phenomena at the metal-semiconductor interface - CHAPTER III. - WORKING PRINCIPLES OF NUCLEAR RADIATION SEMICONDUCTOR DETECTORS - 3.1. Charge-carrier injection. The mean energy for electron-hole pair production - 3.2. The drift of charge-carriers in the electric field. The shape of the current and voltage pulse given by the collection of a single pair. - 3.3. Collection time of electron-hole pairs in a P-N abrupt junction - 3.4. Collection time of electron-hole pairs in coaxial Ge (Li) detectors - 3.5. Influence of SD equivalent circuit elements on the voltage and current pulse shape - 3.6. Collection of charge-carriers in real devices - 3.7. Collection of electric charges by diffusion from outside the depletion layer - 3.8. Detector noise - 3.9. Detector energy resolution - CHAPTER IV - CHARACTERISTICS OF SEMICONDUCTOR DETECTORS - 4.1. Electrical characteristics - 4.2. Detection characteristics - 4.3. Effects of temperature, magnetic field and light on the semiconductor detector characteristics - 4.4. Detector sensitivity to neutrons and gamma-rays - 4.5. Effects of radiation damage on detector characteristics - CHAPTER V - SEMICONDUCTOR DETECTOR TYPES - 5.1. Methods for obtaining high electric fields in semiconductors - 5.2. Homogeneous semiconductor detectors - 5.3. Diffused N-P junction detectors - 5.4. Surface-barrier detectors - 5.5. Guard-ring detectors - 5.6. Totally depleted detectors - 5.7. Neutron detectors - 5.8. Special detectors - 5.9. NIP detectors - CHAPTER VI - AMPLIFICATION OF SEMICONDUCTOR DETECTOR ELECTRIC PULSES - 6.1. Electric charge to voltage pulse conversion - 6.2. Charge-sensitive-preamplifier-noise specification and measurement - 6.S. Amplifier-noise sources - 6.4. Effects of amplifier shaping circuits on noise spectra - 6.5. RC-RC amplifier signal to noise ratio - CHAPTER VII - SEMICONDUCTOR DETECTOR ASSOCIATED ELECTRONICS - 7.1. Spectrometers with semiconductor detectors - 7.2. Charge sensitive preamplifiers - 7.3. Main amplifier - 7.4. Amplitude analyser and expander - 7.5. High amplitude stability pulse generator - 7.6. Transistorized apparatus - APPENDIX A I: Basic properties of Si and Ge - APPENDIX A II: Main natural and artificial alpha sources - APPENDIX A III: Analysis of some circuits used in charge sensitive preamplifiers - REFERENCES -

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1987 with total page 1126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.

Book Nuclear Science Abstracts

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1974 with total page 1082 pages. Available in PDF, EPUB and Kindle. Book excerpt: