Download or read book Systematic Analysis of Bipolar and MOS Transistors written by Uğur Çilingiroğlu and published by Artech House Materials Science. This book was released on 1993 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematic Analysis of Bipolar and MOS Transistors is a self-contained reference that walks you through the logical processes involved in transistor analysis. Linking device and circuit engineering, it shows you how to use device models intelligently, tailor existing models, and develop new ones.

Download or read book Bipolar and Bipolar MOS Integration written by P. A. H. Hart and published by North Holland. This book was released on 1994 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals with the physics and technology aspects of monolytic integration of bipolar transistors and mixed integration of bipolar and MOS transistors. Bipolar technology is an "old" discipline which is now gaining renewed interest as the success of the IEEE bipolar transistor conference BCTM clearly illustrates. As well as providing extensive coverage of this subject, Bipolar and Bipolar-MOS Integration can be used as a handbook for those working in more specialized areas, to acquire access to related fields. Some tutorial paragraphs have been included that will be of particular interest to those new to the subject.The book will be of significant value to those working in the electronic industry, researchers or developers of integrated circuitry and university students.

Download or read book Analysis and Synthesis of MOS Translinear Circuits written by Remco J. Wiegerink and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 167 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book has its roots in an idea first formulated by Barrie Gilbert in 1975. He showed how bipolar analog circuits can realize nonlinear and computational functions. This extended the analog art from linear to nonlinear applications, hence the name trans linear circuits. Not only did this new principle enable marvellous signal processing functions to be accurately implemented, but also the circuits were simple and practical. The perennial problems of analog Ie design, namely temperature sensitivity, processing spread, device nonlinearity and paracitic capacitance were solved to a large extent. Using the trans linear principle in circuit design requires changing your point of view in two ways. First, the grossly nonlinear characteristic of transistors is viewed as an asset rather than as a harmful property. Second, no longer are the signals represented by voltages, but by currents. In fact, the attendant voltage changes are distorted but, as they are very small, they are only of secondary interest. Understanding and analyzing a given trans linear circuit is fairly straightforward. But what about the converse situation: suppose you're given some nonlinear or computational function to implement? How to find a suitable translinear circuit realization? The general problem of analog circuit synthesis is a difficult one and is receiving much attention nowadays. Some years ago, I had the opportunity to investigate methods for designing bipolar trans linear circuits. It turned out that translinear networks have some unique topological properties. Using these properties it was possible to establish heuristic synthesis procedures.

Download or read book Bipolar and MOS Analog Integrated Circuit Design written by Alan B. Grebene and published by Wiley-Interscience. This book was released on 1984-01-23 with total page 920 pages. Available in PDF, EPUB and Kindle. Book excerpt: A practical, engineering book discussing the most modern and general techniques for designing analog integrated circuits which are not digital (excluding computer circuits). Covers the basics of the devices, manufacturing technology, design procedures, shortcuts, and analytic techniques. Includes examples and illustrations of the best current practice.

Download or read book Bipolar transistor and MOSFET device models written by Kunihiro Suzuki and published by Bentham Science Publishers. This book was released on 2016-03-02 with total page 587 pages. Available in PDF, EPUB and Kindle. Book excerpt: Continuous efforts to develop new semiconductor devices enable device manufacturers to make significant improvements in the information technology sector. Bipolar transistors and MOSFETS are two special electronic device components that are used to construct very large scale integrated (VLSI) circuits, allowing engineers to create powerful machines that are power efficient. VLSI device characterization depends largely on semiconductor device modeling which is based on physical and electronic principles. Bipolar transistor and MOSFET device models is a textbook that describes basic functions and characterization models of these two types of transistors. Readers will learn about the processes employed to derive these models which will help them understand the modeling process. Chapters in this text cover the fundamentals of semiconductor devices, the pn junction, high and low injection region models for bipolar transistors, and different MOSFET models such as channel doping models and gated SOI models. Key features of this book include: - step by step, easy to understand presentation of model information on innovative semiconductor devices - an overview of model derivation, assumptions, approximations and limitations - novel experimental information on semiconductor parameters such as gate fringe capacitance, silicided source/drain resistance, and threshold voltage shift Bipolar transistor and MOSFET device models is an essential learning resource for advanced students and professional engineers involved in semiconductor device modeling and fabrication divisions.

Download or read book The Behavior of Bipolar and MOS Transistors and Bipolar and MOS Inverters at High Temperatures written by Bradley M. Marazas and published by . This book was released on 1992 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book MOS Switched Capacitor and Continuous Time Integrated Circuits and Systems written by Rolf Unbehauen and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 645 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this book is to present analysis and design principles, procedures and techniques of analog integrated circuits which are to be implemented in MOS (metal oxide semiconductor) technology. MOS technology is becoming dominant in the realization of digital systems, and its use for analog circuits opens new pos sibilities for the design of complex mixed analog/digital VLSI (very large scale in tegration) chips. Although we are focusing attention in this book principally on circuits and systems which can be implemented in CMOS technology, many con siderations and structures are of a general nature and can be adapted to other promising and emerging technologies, namely GaAs (Gallium Arsenide) and BI MOS (bipolar MOS, i. e. circuits which combine both bipolar and CMOS devices) technology. Moreover, some of the structures and circuits described in this book can also be useful without integration. In this book we describe two large classes of analog integrated circuits: • switched capacitor (SC) networks, • continuous-time CMOS (unswitched) circuits. SC networks are sampled-data systems in which electric charges are transferred from one point to another at regular discrete intervals of time and thus the signal samples are stored and processed. Other circuits belonging to this class of sampled-data systems are charge transfer devices (CTD) and charge coupled dev ices (CCD). In contrast to SC circuits, continuous-time CMOS circuits operate continuously in time. They can be considered as subcircuits or building blocks (e. g.

Download or read book Compact Hierarchical Bipolar Transistor Modeling with Hicum written by Michael Schr”ter and published by World Scientific. This book was released on 2010 with total page 753 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.

Download or read book Heterojunction Bipolar Transistors for Circuit Design written by Jianjun Gao and published by John Wiley & Sons. This book was released on 2015-04-27 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods

Download or read book High Frequency Bipolar Transistors written by Michael Reisch and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.

Download or read book Field Effect and Bipolar Power Transistor Physics written by Adolph Blicher and published by Elsevier. This book was released on 2012-12-02 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Field-Effect and Bipolar Power Transistor Physics introduces the physics of operation of power transistors. It deals with bipolar devices as well as field-effect power transistors. The book provides an up-to-date account of the progress made in power transistor design. This volume consists of three parts. Part I examines general considerations and reviews semiconductor surface theory as a background to understanding surface phenomena. It also discusses the effect of high carrier concentration on the semiconductor properties. Part II deals with bipolar transistors and the basic structures of power transistors. Part III discusses junction field-effect and surface field-effect transistors. This book is written for electrical engineers who design power transistor circuits, device physicists and designers, and university students. The reader should have some familiarity with small signal transistor physics as the presentation is at the senior undergraduate or first-year graduate level.

Download or read book Low Noise Wide Band Amplifiers in Bipolar and CMOS Technologies written by Zhong Yuan Chong and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 219 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analog circuit design has grown in importance because so many circuits cannot be realized with digital techniques. Examples are receiver front-ends, particle detector circuits, etc. Actually, all circuits which require high precision, high speed and low power consumption need analog solutions. High precision also needs low noise. Much has been written already on low noise design and optimization for low noise. Very little is available however if the source is not resistive but capacitive or inductive as is the case with antennas or semiconductor detectors. This book provides design techniques for these types of optimization. This book is thus intended firstly for engineers on senior or graduate level who have already designed their first operational amplifiers and want to go further. It is especially for engineers who do not want just a circuit but the best circuit. Design techniques are given that lead to the best performance within a certain technology. Moreover, this is done for all important technologies such as bipolar, CMOS and BiCMOS. Secondly, this book is intended for engineers who want to understand what they are doing. The design techniques are intended to provide insight. In this way, the design techniques can easily be extended to other circuits as well. Also, the design techniques form a first step towards design automation. Thirdly, this book is intended for analog design engineers who want to become familiar with both bipolar and CMOS technologies and who want to learn more about which transistor to choose in BiCMOS.

Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.

Download or read book Two dimensional Integral Analysis of Bipolar Junction Transistors written by Archie Fern Lachner and published by . This book was released on 1982 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Circuit Analysis with Multisim written by David Baez-Lopez and published by Springer Nature. This book was released on 2022-05-31 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is concerned with circuit simulation using National Instruments Multisim. It focuses on the use and comprehension of the working techniques for electrical and electronic circuit simulation. The first chapters are devoted to basic circuit analysis. It starts by describing in detail how to perform a DC analysis using only resistors and independent and controlled sources. Then, it introduces capacitors and inductors to make a transient analysis. In the case of transient analysis, it is possible to have an initial condition either in the capacitor voltage or in the inductor current, or both. Fourier analysis is discussed in the context of transient analysis. Next, we make a treatment of AC analysis to simulate the frequency response of a circuit. Then, we introduce diodes, transistors, and circuits composed by them and perform DC, transient, and AC analyses. The book ends with simulation of digital circuits. A practical approach is followed through the chapters, using step-by-step examples to introduce new Multisim circuit elements, tools, analyses, and virtual instruments for measurement. The examples are clearly commented and illustrated. The different tools available on Multisim are used when appropriate so readers learn which analyses are available to them. This is part of the learning outcomes that should result after each set of end-of-chapter exercises is worked out. Table of Contents: Introduction to Circuit Simulation / Resistive Circuits / Time Domain Analysis -- Transient Analysis / Frequency Domain Analysis -- AC Analysis / Semiconductor Devices / Digital Circuits

Download or read book Fundamentals of High Frequency CMOS Analog Integrated Circuits written by Duran Leblebici and published by Springer Nature. This book was released on 2021-03-10 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook is ideal for senior undergraduate and graduate courses in RF CMOS circuits, RF circuit design, and high-frequency analog circuit design. It is aimed at electronics engineering students and IC design engineers in the field, wishing to gain a deeper understanding of circuit fundamentals, and to go beyond the widely-used automated design procedures. The authors employ a design-centric approach, in order to bridge the gap between fundamental analog electronic circuits textbooks and more advanced RF IC design texts. The structure and operation of the building blocks of high-frequency ICs are introduced in a systematic manner, with an emphasis on transistor-level operation, the influence of device characteristics and parasitic effects, and input–output behavior in the time and frequency domains. This second edition has been revised extensively, to expand some of the key topics, to clarify the explanations, and to provide extensive design examples and problems. New material has been added for basic coverage of core topics, such as wide-band LNAs, noise feedback concept and noise cancellation, inductive-compensated band widening techniques for flat-gain or flat-delay characteristics, and basic communication system concepts that exploit the convergence and co-existence of Analog and Digital building blocks in RF systems. A new chapter (Chapter 5) has been added on Noise and Linearity, addressing key topics in a comprehensive manner. All of the other chapters have also been revised and largely re-written, with the addition of numerous, solved design examples and exercise problems.

Download or read book A Review of Bipolar and MOS LSI written by and published by . This book was released on 1972* with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt: