Download or read book Structure Morphology and Kinetics of GaN Film Growth Using Gas source and RF Plasma assisted Metal organic Molecular Beam Epitaxy written by Arthur Randall Woll and published by . This book was released on 2000 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book American Doctoral Dissertations written by and published by . This book was released on 1999 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gas source Molecular Beam Epitaxy Growth of GaN with a Nitrogen Radical Beam and Ammonia written by William Sam Wong and published by . This book was released on 1995 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth of GaN Thin Film and AlGaN based Quantum Well Structure by Plasma assisted Molecular Beam Epitaxy for Optoelectronics Application written by 碩廷·尤 and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics of Semiconductor Devices written by V. K. Jain and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 841 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating research groups with an excellent platform for interaction and collaboration with other members of their respective scientific community. This workshop’s technical sessions include various current and significant topics for applications and scientific developments, including • Optoelectronics • VLSI & ULSI Technology • Photovoltaics • MEMS & Sensors • Device Modeling and Simulation • High Frequency/ Power Devices • Nanotechnology and Emerging Areas • Organic Electronics • Displays and Lighting Many eminent scientists from various national and international organizations are actively participating with their latest research works and also equally supporting this mega event by joining the various organizing committees.

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2000 with total page 956 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Effect of Nitrogen Plasma Species on the Growth Morphology and Mechanism of GaN Nanocolumns Deposited by Plasma assisted Molecular beam Epitaxy written by Ananya Debnath and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation addresses GaN nanocolumns (NCs) growth on Si (111) via a SixNy intermediate layer by radio-frequency molecular-beam epitaxy. In the existing literature, the GaN NC’s morphology was shown to be influenced by growth parameters such as Ga flux, substrate type, growth temperature, buffer layer types, sticking coefficient of Ga adatoms in different planes, etc. The one aspect that so far has been understudied is the role of the plasma-generated species. Due to the multiple states and concentrations of the available excited species in a nitrogen plasma, it has been difficult to quantify and correlate their role with the morphology of the resulting NCs. To address this issue, the nitrogen plasma source has been investigated by optical emission spectroscopy, in order to quantify the relative abundances of the molecular and atomic nitrogen species, and then to examine the effect of these species on the growth morphology and mechanism of GaN NCs grown on Si (111). The length, diameter, and density of NCs were analyzed as a function of the nitrogen species Cmol/Cat concentration ratio during epitaxy. Growth rate and diameter are found to increase and density to decrease up to a certain value of Cmol/Cat nitrogen ratio but plateaued beyond that. The effect of the Cmol/Cat nitrogen ratio seems to be an additional factor that has to be taken into account in the modeling of GaN NC growth. The structural and optical characterization of GaN NCs by PL, XRD, and RHEED show that GaN NC samples are strained. This strain decreases with increasing Cmol/Cat ratio. The growth mechanism of the GaN NCs was investigated in terms of Cmol/Cat ratio using the SEM and TEM results. Under our growth conditions, the NC growth appeared to be driven by direct impingement of adatoms rather than diffusion. The NCs have a core shell structure where the difference in growth rate of shell and core diminishes as Cmol/Cat ratio increases, which results in NCs with different radial growth rates.

Download or read book 17th International Symposium on Plasma Chemistry written by Javad T. Mostaghimi and published by . This book was released on 2005 with total page 1284 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Plasma Enhanced Gas Source Molecular Beam Epitaxy Deposition of High Quality GaN written by and published by . This book was released on 1990 with total page 17 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is a III-V semiconductor with enormous optical device potential in the near ultraviolet region, a band which has been relatively inaccessible to semiconductor technology. High quality GaN, along with its A1N and InN alloys, would make feasible the production of optically active devices ranging from the visible out to the approximately 6 eV band gap of A1N. Along with its potential benefits come the challenges of this material system. Researchers in the past have been plagued by the inertness of nitrogen which causes GaN films to have a high n-type background carrier concentration resulting from nitrogen vacancies. The goal is to apply electron cyclotron resonance plasma and molecular beam epitaxy technology towards the GaN problem to obtain device quality semiconductor material. With the growth of high quality cubic GaN this past year, our program has defined itself into two main objectives. Further optimization of the GaN deposition to obtain material of the highest optical and electronic quality will be necessary. Parallel efforts will be undertaken in the related A1N and InN systems. The ability to grow each material will allow these materials to be combined into heterostructure devices analogous to those common in other compound semiconductor systems. A second avenue of activity which can be explored in parallel with the device work will be a cataloging of the properties of the entirely new cubic phases of GaN, InN and A1N. Cubic InN and A1N have never to our knowledge been produced in a laboratory. Comparison of the physical properties of these materials with the established properties of the wurtzite phases would yield interesting insights into the role of crystal structure and its influence on the solid state.

Download or read book Handbook of Solid State Lighting and LEDs written by Zhe Chuan Feng and published by CRC Press. This book was released on 2017-06-12 with total page 968 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook addresses the development of energy-efficient, environmentally friendly solid-state light sources, in particular semiconductor light emitting diodes (LEDs) and other solid-state lighting devices. It reflects the vast growth of this field and impacts in diverse industries, from lighting to communications, biotechnology, imaging, and medicine. The chapters include coverage of nanoscale processing, fabrication of LEDs, light diodes, photodetectors and nanodevices, characterization techniques, application, and recent advances. Readers will obtain an understanding of the key properties of solid-state lighting and LED devices, an overview of current technologies, and appreciation for the challenges remaining. The handbook will be useful to material growers and evaluators, device design and processing engineers, newcomers, students, and professionals in the field.

Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book GaN Growth by RF plasma Assisted Molecular Beam Epitaxy written by Brenda VanMil and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth of Non polar and Semi polar GaN with Plasma Assisted Molecular Beam Epitaxy written by Melvin Barker McLaurin and published by . This book was released on 2007 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Finally, we propose a possible source of anisotropic mobilities and enhanced p-type conduction in faulted films is proposed. Basal plane stacking faults are treated as heterostructures of the wurtzite and zincblende polytypes of GaN. The band parameter and polarization differences between the polytypes result in large offsets in both the conduction and valence band edges at the stacking faults. Anisotropy results from scattering from the band-edge offsets and enhanced mobility from screening due to charge accumulation at these band edge offsets.

Download or read book Growth and Characterization of GaN based Thin Film Grown by Plasma assisted Molecular Beam Epitaxy for Spintronics and Optoelectronics Application written by and published by . This book was released on 2013 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book GROWTH KINETICS OF GAN DURING written by 鄭聯喜 and published by Open Dissertation Press. This book was released on 2017-01-27 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Growth Kinetics of GaN During Molecular Beam Epitaxy" by 鄭聯喜, Lianxi, Zheng, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3124274 Subjects: Surfaces (Physics) Gallium nitride Molecular beam epitaxy Scanning tunneling microscopy

Download or read book Growth and Morphology of Er Doped GaN on Sapphire and Hydride Vapor Phase Epitaxy Substrates written by and published by . This book was released on 1999 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: We report the morphological and compositional characteristics and their effect on optical properties of Er-doped GaN grown by solid source molecular beam epitaxy on sapphire and hydride vapor phase epitaxy GaN substrates. The GaN was grown by molecular beam epitaxy on sapphire substrates using solid sources (for Ga, Al, and Er) and a plasma gas source for N2. The emission spectrum of the GaN:Er films consists of two unique narrow green lines at 537 and 558 nm along with typical Er31 emission in the infrared at 1.5 micrometers. The narrow lines have been identified as Er31 transitions from the 2H(sub 11/2) and 4S(sub 3/2) levels to the 4I(sub 15/2) ground state. The morphology of the GaN:Er films showed that the growth resulted in either a columnar or more compact structure with no effect on green light emission intensity.