Download or read book Electrical Properties of Indium Arsenide Nanowires and Their Field Effect Transistors written by Mengqi Fu and published by Springer. This book was released on 2018-12-12 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.

Download or read book Fundamentals of III V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Download or read book Photodiodes written by Jeong Woo Park and published by BoD – Books on Demand. This book was released on 2011-07-29 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photodiodes or photodetectors are in one boat with our human race. Efforts of people in related fields are contained in this book. This book would be valuable to those who want to obtain knowledge and inspiration in the related area.

Download or read book Nanowire Electronics written by Guozhen Shen and published by Springer. This book was released on 2018-11-23 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives a comprehensive overview of recent advances in developing nanowires for building various kinds of electronic devices. Specifically the applications of nanowires in detectors, sensors, circuits, energy storage and conversion, etc., are reviewed in detail by the experts in this field. Growth methods of different kinds of nanowires are also covered when discussing the electronic applications. Through discussing these cutting edge researches, the future directions of nanowire electronics are identified.

Download or read book Silicon Nanowire Transistors written by Ahmet Bindal and published by Springer. This book was released on 2016-02-23 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI.

Download or read book Innovative Applications of Nanowires for Circuit Design written by Balwinder Raj and published by Engineering Science Reference. This book was released on 2020-11-20 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The goal of the book is to provide a platform for domain experts, researchers, practitioners, and students to exchange ideas on technologies and practical experiences related to innovations in current research on Nanowire and its applications"--

Download or read book Germanium Based Technologies written by Cor Claeys and published by Elsevier. This book was released on 2011-07-28 with total page 476 pages. Available in PDF, EPUB and Kindle. Book excerpt: Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. - State-of-the-art information available for the first time as an all-in-source - Extensive reference list making it an indispensable reference book - Broad coverage from fundamental aspects up to industrial applications

Download or read book Science and Application of Nanotubes written by D. Tománek and published by Springer Science & Business Media. This book was released on 2005-12-17 with total page 393 pages. Available in PDF, EPUB and Kindle. Book excerpt: This series of books, which is published at the rate of about one per year, addresses fundamental problems in materials science. The contents cover a broad range of topics from small clusters of atoms to engineering materials and involve chemistry, physics, materials science, and engineering, with length scales ranging from Ångstroms up to millimeters. The emphasis is on basic science rather than on applications. Each book focuses on a single area of current interest and brings together leading experts to give an up-to-date discussion of their work and the work of others. Each article contains enough references that the interested reader can access the relevant literature. Thanks are given to the Center for Fundamental Materials Research at Michigan State University for supporting this series. M. F. Thorpe, Series Editor E-mail: thorpe@pa. msu. edu East Lansing, Michigan V PREFACE It is hard to believe that not quite ten years ago, namely in 1991, nanotubes of carbon were discovered by Sumio Iijima in deposits on the electrodes of the same carbon arc apparatus that was used to produce fullerenes such as the “buckyball”. Nanotubes of carbon or other materials, consisting ofhollow cylinders that are only a few nanometers in diameter, yet up to millimeters long, are amazing structures that self-assemble under extreme conditions. Their quasi-one-dimensional character and virtual absence of atomic defects give rise to a plethora of unusual phenomena.

Download or read book Introduction to Isotopic Materials Science written by Vladimir G. Plekhanov and published by Springer. This book was released on 2018-12-05 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes new trends in the nanoscience of isotopic materials science. Assuming a background in graduate condensed matter physics and covering the fundamental aspects of isotopic materials science from the very beginning, it equips readers to engage in high-level professional research in this area. The book ́s main objective is to provide insight into the question of why solids are the way they are, either because of how their atoms are bonded with one another, because of defects in their structure, or because of how they are produced or processed. Accordingly, it explores the science of how atoms interact, connects the results to real materials properties, and demonstrates the engineering concepts that can be used to produce or improve semiconductors by design. In addition, it shows how the concepts discussed are applied in the laboratory. The book addresses the needs of researchers, graduate students and senior undergraduate students alike. Although primarily written for materials science audience, it will be equally useful to those teaching in electrical engineering, materials science or even chemical engineering or physics curricula. In order to maintain the focus on materials concepts, however, the book does not burden the reader with details of many of the derivations and equations nor does it delve into the details of electrical engineering topics.

Download or read book Silicon Nanocrystals written by Lorenzo Pavesi and published by John Wiley & Sons. This book was released on 2010-02-02 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: This unique collection of knowledge represents a comprehensive treatment of the fundamental and practical consequences of size reduction in silicon crystals. This clearly structured reference introduces readers to the optical, electrical and thermal properties of silicon nanocrystals that arise from their greatly reduced dimensions. It covers their synthesis and characterization from both chemical and physical viewpoints, including ion implantation, colloidal synthesis and vapor deposition methods. A major part of the text is devoted to applications in microelectronics as well as photonics and nanobiotechnology, making this of great interest to the high-tech industry.

Download or read book Electrical Atomic Force Microscopy for Nanoelectronics written by Umberto Celano and published by Springer. This book was released on 2019-08-01 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: The tremendous impact of electronic devices on our lives is the result of continuous improvements of the billions of nanoelectronic components inside integrated circuits (ICs). However, ultra-scaled semiconductor devices require nanometer control of the many parameters essential for their fabrication. Through the years, this created a strong alliance between microscopy techniques and IC manufacturing. This book reviews the latest progress in IC devices, with emphasis on the impact of electrical atomic force microscopy (AFM) techniques for their development. The operation principles of many techniques are introduced, and the associated metrology challenges described. Blending the expertise of industrial specialists and academic researchers, the chapters are dedicated to various AFM methods and their impact on the development of emerging nanoelectronic devices. The goal is to introduce the major electrical AFM methods, following the journey that has seen our lives changed by the advent of ubiquitous nanoelectronics devices, and has extended our capability to sense matter on a scale previously inaccessible.

Download or read book The Role of Topology in Materials written by Sanju Gupta and published by . This book was released on 2018 with total page 297 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the most important advances in the class of topological materials and discusses the topological characterization, modeling and metrology of materials. Further, it addresses currently emerging characterization techniques such as optical and acoustic, vibrational spectroscopy (Brillouin, infrared, Raman), electronic, magnetic, fluorescence correlation imaging, laser lithography, small angle X-ray and neutron scattering and other techniques, including site-selective nanoprobes. The book analyzes the topological aspects to identify and quantify these effects in terms of topology metrics. The topological materials are ubiquitous and range from (i) de novo nanoscale allotropes of carbons in various forms such as nanotubes, nanorings, nanohorns, nanowalls, peapods, graphene, etc. to (ii) metallo-organic frameworks, (iii) helical gold nanotubes, (iv) Möbius conjugated polymers, (v) block co-polymers, (vi) supramolecular assemblies, to (vii) a variety of biological and soft-matter systems, e.g. foams and cellular materials, vesicles of different shapes and genera, biomimetic membranes, and filaments, (viii) topological insulators and topological superconductors, (ix) a variety of Dirac materials including Dirac and Weyl semimetals, as well as (x) knots and network structures. Topological databases and algorithms to model such materials have been also established in this book. In order to understand and properly characterize these important emergent materials, it is necessary to go far beyond the traditional paradigm of microscopic structure-property-function relationships to a paradigm that explicitly incorporates topological aspects from the outset to characterize and/or predict the physical properties and currently untapped functionalities of these advanced materials. Simulation and modeling tools including quantum chemistry, molecular dynamics, 3D visualization and tomography are also indispensable. These concepts have found applications in condensed matter physics, materials science and engineering, physical chemistry and biophysics, and the various topics covered in the book have potential applications in connection with novel synthesis techniques, sensing and catalysis. As such, the book offers a unique resource for graduate students and researchers alike.

Download or read book Electronic Quantum Transport in Mesoscopic Semiconductor Structures written by Thomas Ihn and published by Springer. This book was released on 2004-09-09 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: Opening with a brief historical account of electron transport from Ohm's law through transport in semiconductor nanostructures, this book discusses topics related to electronic quantum transport. The book is written for graduate students and researchers in the field of mesoscopic semiconductors or in semiconductor nanostructures. Highlights include review of the cryogenic scanning probe techniques applied to semiconductor nanostructures.

Download or read book Carbon Nanotubes written by Ado Jorio and published by Springer Science & Business Media. This book was released on 2007-12-18 with total page 734 pages. Available in PDF, EPUB and Kindle. Book excerpt: Building on the success of its predecessor, Carbon Nanotubes: Synthesis, Structure, Properties and Applications, this second volume focuses on those areas that have grown rapidly in the past few years. Contributing authors reflect the multidisciplinary nature of the book and are all leaders in their particular areas of research. Among the many topics they cover are graphene and other carbon-like and tube-like materials, which are likely to affect and influence developments in nanotubes within the next five years. Extensive use of illustrations enables you to better understand and visualize key concepts and processes.

Download or read book Handbook of Nanoscience Engineering and Technology Third Edition written by William A. Goddard III and published by CRC Press. This book was released on 2012-06-12 with total page 1097 pages. Available in PDF, EPUB and Kindle. Book excerpt: In his 1959 address, "There is Plenty of Room at the Bottom," Richard P. Feynman speculated about manipulating materials atom by atom and challenged the technical community "to find ways of manipulating and controlling things on a small scale." This visionary challenge has now become a reality, with recent advances enabling atomistic-level tailoring and control of materials. Exemplifying Feynman’s vision, Handbook of Nanoscience, Engineering, and Technology, Third Edition continues to explore innovative nanoscience, engineering, and technology areas. Along with updating all chapters, this third edition extends the coverage of emerging nano areas even further. Two entirely new sections on energy and biology cover nanomaterials for energy storage devices, photovoltaics, DNA devices and assembly, digital microfluidic lab-on-a-chip, and much more. This edition also includes new chapters on nanomagnet logic, quantum transport at the nanoscale, terahertz emission from Bloch oscillator systems, molecular logic, electronic optics in graphene, and electromagnetic metamaterials. With contributions from top scientists and researchers from around the globe, this color handbook presents a unified, up-to-date account of the most promising technologies and developments in the nano field. It sets the stage for the next revolution of nanoscale manufacturing—where scalable technologies are used to manufacture large numbers of devices with complex functionalities.

Download or read book Nanowire Field Effect Transistors Principles and Applications written by Dae Mann Kim and published by Springer Science & Business Media. This book was released on 2013-10-23 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

Download or read book Handbook of Spintronics written by Yongbing Xu and published by Springer. This book was released on 2015-10-14 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over two volumes and 1500 pages, the Handbook of Spintronics will cover all aspects of spintronics science and technology, including fundamental physics, materials properties and processing, established and emerging device technology and applications. Comprising 60 chapters from a large international team of leading researchers across academia and industry, the Handbook provides readers with an up-to-date and comprehensive review of this dynamic field of research. The opening chapters focus on the fundamental physical principles of spintronics in metals and semiconductors, including an introduction to spin quantum computing. Materials systems are then considered, with sections on metallic thin films and multilayers, magnetic tunnelling structures, hybrids, magnetic semiconductors and molecular spintronic materials. A separate section reviews the various characterisation methods appropriate to spintronics materials, including STM, spin-polarised photoemission, x-ray diffraction techniques and spin-polarised SEM. The third part of the Handbook contains chapters on the state of the art in device technology and applications, including spin valves, GMR and MTJ devices, MRAM technology, spin transistors and spin logic devices, spin torque devices, spin pumping and spin dynamics and other topics such as spin caloritronics. Each chapter considers the challenges faced by researchers in that area and contains some indications of the direction that future work in the field is likely to take. This reference work will be an essential and long-standing resource for the spintronics community.