Download or read book Statistical modeling reliability analysis for electromigration early failure and mass transport in cu oxide dual damascene interconnects written by Ki-don Lee and published by . This book was released on 2000 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Electromigration Drift Velocity and the Reliability of Dual damascene Copper Interconnect Trees written by Frank Lili Wei and published by . This book was released on 2004 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt: (Cont.) It is postulated that this gradual resistance increase results from void growth and that the rate of resistance increase correlates with the drift velocity for electromigration. Through drift measurements, we determined the activation energy for electromigration is 0.80±0.06eV. The values of the drift velocities determined in vias-below lines were similar to those measured in vias-above lines. This fact supports the proposal that the asymmetry in reliability between the two different configurations is associated with the void sizes required for failure. Reliability characterization of dotted-I and T-shaped Cu interconnect trees was also carried out. Similar to Al, we found that individual interconnect segments cannot serve as fundamental reliability units (FRU). Unlike Al, we found that Cu interconnect trees are not the FRUs either, due to possible non-blocking vias. Furthermore, due to low stress required for void nucleation in Cu- compared to Al-based interconnects, Cu reliability behavior points to the need to develop a via-based reliability assessment methodology. An atomic reservoir effect for Cu was not indicated by the investigation T-shaped trees. This leads to conservative void growth model for circuit-level reliability assessment methodology.
Download or read book Fundamentals of Electromigration Aware Integrated Circuit Design written by Jens Lienig and published by Springer. This book was released on 2018-02-23 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.
Download or read book Proceedings of the International Symposium on the Physical Failure Analysis of Integrated Circuits written by and published by . This book was released on 2004 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Stress Induced Phenomena in Metallization written by Shefford P. Baker and published by American Inst. of Physics. This book was released on 2002-04-09 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tiny metal structures, less than a millionth of a meter across, are critical building blocks in a number of high-tech devices such as computer chips. These "metallizations" are subjected to extreme conditions of temperature, electric current density, and mechanical load, which may cause the device they are in to fail. This book contains research papers on these metallizations and on the reliability problems associated with them. The papers were peer reviewed for these proceedings.
Download or read book Failure Analysis written by Marius Bazu and published by John Wiley & Sons. This book was released on 2011-03-08 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Failure analysis is the preferred method to investigate product or process reliability and to ensure optimum performance of electrical components and systems. The physics-of-failure approach is the only internationally accepted solution for continuously improving the reliability of materials, devices and processes. The models have been developed from the physical and chemical phenomena that are responsible for degradation or failure of electronic components and materials and now replace popular distribution models for failure mechanisms such as Weibull or lognormal. Reliability engineers need practical orientation around the complex procedures involved in failure analysis. This guide acts as a tool for all advanced techniques, their benefits and vital aspects of their use in a reliability programme. Using twelve complex case studies, the authors explain why failure analysis should be used with electronic components, when implementation is appropriate and methods for its successful use. Inside you will find detailed coverage on: a synergistic approach to failure modes and mechanisms, along with reliability physics and the failure analysis of materials, emphasizing the vital importance of cooperation between a product development team involved the reasons why failure analysis is an important tool for improving yield and reliability by corrective actions the design stage, highlighting the ‘concurrent engineering' approach and DfR (Design for Reliability) failure analysis during fabrication, covering reliability monitoring, process monitors and package reliability reliability resting after fabrication, including reliability assessment at this stage and corrective actions a large variety of methods, such as electrical methods, thermal methods, optical methods, electron microscopy, mechanical methods, X-Ray methods, spectroscopic, acoustical, and laser methods new challenges in reliability testing, such as its use in microsystems and nanostructures This practical yet comprehensive reference is useful for manufacturers and engineers involved in the design, fabrication and testing of electronic components, devices, ICs and electronic systems, as well as for users of components in complex systems wanting to discover the roots of the reliability flaws for their products.
Download or read book Study of Low k Dielectric Reliability of Cu Dual Damascene Interconnect written by 李守忠 and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electromigration induced Drift in Damascene and Plasma etched Al Cu written by and published by . This book was released on 2000 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Finite Element Analysis of Electromigration Failure in Cu Interconnect written by Yuxiang He and published by . This book was released on 2005 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analysis of Electromigration in Single and Dual inlaid Cu Interconnects written by Patrick Ryan Justison and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electromigration in ULSI Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.
Download or read book Reliability Physics and Engineering written by J. W. McPherson and published by Springer Science & Business Media. This book was released on 2013-06-03 with total page 406 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Reliability Physics and Engineering" provides critically important information for designing and building reliable cost-effective products. The textbook contains numerous example problems with solutions. Included at the end of each chapter are exercise problems and answers. "Reliability Physics and Engineering" is a useful resource for students, engineers, and materials scientists.
Download or read book Noble and Precious Metals written by Mohindar Seehra and published by BoD – Books on Demand. This book was released on 2018-07-04 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: The use of copper, silver, gold and platinum in jewelry as a measure of wealth is well known. This book contains 19 chapters written by international authors on other uses and applications of noble and precious metals (copper, silver, gold, platinum, palladium, iridium, osmium, rhodium, ruthenium, and rhenium). The topics covered include surface-enhanced Raman scattering, quantum dots, synthesis and properties of nanostructures, and its applications in the diverse fields such as high-tech engineering, nanotechnology, catalysis, and biomedical applications. The basis for these applications is their high-free electron concentrations combined with high-temperature stability and corrosion resistance and methods developed for synthesizing nanostructures. Recent developments in all these areas with up-to-date references are emphasized.
Download or read book Power Distribution Networks in High Speed Integrated Circuits written by Andrey Mezhiba and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 287 pages. Available in PDF, EPUB and Kindle. Book excerpt: Distributing power in high speed, high complexity integrated circuits has become a challenging task as power levels exceeding tens of watts have become commonplace while the power supply is plunging toward one volt. This book is dedicated to this important subject. The primary purpose of this monograph is to provide insight and intuition into the behavior and design of power distribution systems for high speed, high complexity integrated circuits.
Download or read book Materials for Information Technology written by Ehrenfried Zschech and published by Springer Science & Business Media. This book was released on 2006-07-02 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an up to date survey of the state of the art of research into the materials used in information technology, and will be bought by researchers in universities, institutions as well as research workers in the semiconductor and IT industries.
Download or read book Electromigration in Thin Films and Electronic Devices written by Choong-Un Kim and published by Elsevier. This book was released on 2011-08-28 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: Understanding and limiting electromigration in thin films is essential to the continued development of advanced copper interconnects for integrated circuits. Electromigration in thin films and electronic devices provides an up-to-date review of key topics in this commercially important area.Part one consists of three introductory chapters, covering modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation and x-ray microbeam studies of electromigration. Part two deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure. Finally, part three covers electromigration in solder, with chapters discussing topics such as electromigration-induced microstructural evolution and electromigration in flip-chip solder joints.With its distinguished editor and international team of contributors, Electromigration in thin films and electronic devices is an essential reference for materials scientists and engineers in the microelectronics, packaging and interconnects industries, as well as all those with an academic research interest in the field. - Provides up-to-date coverage of the continued development of advanced copper interconnects for integrated circuits - Comprehensively reviews modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation, and x-ray microbeam studies of electromigration - Deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure
