Download or read book Spectroscopic Studies of Point Defects in Some Oxides written by L. S. Welch and published by . This book was released on 1981 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Spectroscopic Studies of Point Defects in Some Oxides written by Lynne S. Welch and published by . This book was released on 1981 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects and Transport in Oxides written by Robert Jaffee and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 598 pages. Available in PDF, EPUB and Kindle. Book excerpt: DEFECTS AND TRANSPORT IN OXIDES is the proceedings of the eighth Battelle Colloquium in the Materials Sciences, held in Columbus and Salt Fork, Ohio, September 17-22, 1973. It took as its theme the relationship between defects and transport of both mass and charge in oxides. Applications of defect-controlled transport to a number of important processes in oxides also were covered. In selecting this topic, the Organizing Committee thought that 1973 was timely to bring together the leading theoretical and experimental researchers in the oxide transport field to review its status in a critical way, and to consider current major research directions and how research in the future might be guided into fruitful areas. The meeting was highlighted by the presentation of several papers which suggest that major advances in our understanding of transport in oxides appear to be imminent. These papers dealt with the results of new theoretical approaches whereby the energies and configurations of defects may be calculated, and with new experimental techniques for indirectly observing these defects, previously thought to be below the limits of experimental resolving power. Other papers, dealing with the application of defect chemistry to technological processes, served to demonstrate the successes and to point out yet unresolved problems associated with ix x PREFACE understanding the chemistry of imperfect crystals.
Download or read book Defects in SiO2 and Related Dielectrics Science and Technology written by Gianfranco Pacchioni and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 619 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
Download or read book Defects in Two Dimensional Materials written by Rafik Addou and published by Elsevier. This book was released on 2022-02-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in Two-Dimensional Materials addresses the fundamental physics and chemistry of defects in 2D materials and their effects on physical, electrical and optical properties. The book explores 2D materials such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMD). This knowledge will enable scientists and engineers to tune 2D materials properties to meet specific application requirements. The book reviews the techniques to characterize 2D material defects and compares the defects present in the various 2D materials (e.g. graphene, h-BN, TMDs, phosphorene, silicene, etc.). As two-dimensional materials research and development is a fast-growing field that could lead to many industrial applications, the primary objective of this book is to review, discuss and present opportunities in controlling defects in these materials to improve device performance in general or use the defects in a controlled way for novel applications. Presents the theory, physics and chemistry of 2D materials Catalogues defects of 2D materials and their impacts on materials properties and performance Reviews methods to characterize, control and engineer defects in 2D materials
Download or read book Defects and Diffusion Studied Using PAC Spectroscopy written by Herbert Jaeger and published by Trans Tech Publications Ltd. This book was released on 2011-03-15 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters BCI (WoS). The motivation for this special-topic volume was two-fold. Among the various techniques for probing material properties at the atomic scale, PAC is a somewhat hidden gem. This is partly because PAC requires the use of radioisotopes; thus rendering it almost useless as a non-destructive characterization method. Moreover, there are relatively few PAC isotopes available; so it is not always possible to apply PAC to the most technologically pressing problems. Thus, PAC studies of materials are often more fundamental, and less applied, in nature. One of the goals of this volume was to raise the profile of PAC: in particular, for materials scientists, whose research could well benefit from adding this method to their tool-box. The second goal was to provide a single-source reference which illustrated the applicability of PAC to a wide range of materials. Part 1 consists of a number of comprehensive review articles concerning the technique itself and its state-of-the-art application to magnetic materials, ceramic oxides and nanostructured materials. Part 2 consists of papers which describe ongoing work on TiO2 nanomaterials, L12-structured intermetallic compounds, and wide-bandgap semiconductors. Overall, this is a valuable and unique guide to the subject.
Download or read book Charged Semiconductor Defects written by Edmund G. Seebauer and published by Springer Science & Business Media. This book was released on 2008-11-14 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Download or read book Defects and Their Structure in Nonmetallic Solids written by B. Henderson and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 502 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Advanced Study Institute of which this volume is the proceedings was held at the University of Exeter during 24 August to 6 September 1975. There were seventy participants of whom eighteen were lecturers and members of the advisory committee. All NATO countries except Holland, Iceland and Portugal were re presented. In addition a small number of participants came from non-NATO countries Japan, Ireland and Switzerland. An aim of the organising committee was to bring together scientists of wide interests and expertise in the defect structure of insulators and semiconductors. Thus major emphases in the pro gramme concerned the use of spectroscopy and microscopy in revealing the structure of point defects and their aggregates, line defects as well as planar and volume defects. The lectures revealed that in general little is known of the fate of the interstitial in most irradiated solids. Nor are the dynamic properties of defects under stood in sufficient detail that one can state how point defects cluster and eventually become macroscopic defects. Although this book faithfully reproduces the material covered by the invited speakers, it does not really follow the flow of the lectures. This is because it seemed advisable for each lecturer to provide a single self-contained and authoritative manuscript, rather than a series of short articles corresponding to the lectures.
Download or read book Defects at Oxide Surfaces written by Jacques Jupille and published by Springer. This book was released on 2015-02-09 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the basics and characterization of defects at oxide surfaces. It provides a state-of-the-art review of the field, containing information to the various types of surface defects, describes analytical methods to study defects, their chemical activity and the catalytic reactivity of oxides. Numerical simulations of defective structures complete the picture developed. Defects on planar surfaces form the focus of much of the book, although the investigation of powder samples also form an important part. The experimental study of planar surfaces opens the possibility of applying the large armoury of techniques that have been developed over the last half-century to study surfaces in ultra-high vacuum. This enables the acquisition of atomic level data under well-controlled conditions, providing a stringent test of theoretical methods. The latter can then be more reliably applied to systems such as nanoparticles for which accurate methods of characterization of structure and electronic properties have yet to be developed. The book gives guidance to tailor oxide surfaces by controlling the nature and concentration of defects. The importance of defects in the physics and chemistry of metal oxide surfaces is presented in this book together with the prominent role of oxides in common life. The book contains contributions from leaders in the field. It serves as a reference for experts and beginners in the field.
Download or read book Point Defects in Solids written by James H. Crawford and published by Springer. This book was released on 1972-01-08 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crystal defects can no longer be thought of as a scientific curiosity, but must be considered an important aspect of solid-state science. This is largely because many of the more interesting properties of crystalline solids are disproportionately dominated by effects due to a tiny concentration of imperfections in an otherwise perfect lattice. The physics of such lattice defects is not only of significance in a great variety of applications, but is also interesting in its own right. Thus, an extensive science of point defects and dislocations has been constructed during the past two and a half decades. Stimulated by the technological and scientific interest in plasticity, there have appeared in recent years rather a large number of books dealing with dislocations; in the case of point defects, however, only very few broad and extensive treatments have been published. Thus, there are few compre hensive, tutorial sources for the scientist or engineer whose research ac tivities are affected by point defect phenomena, or who might wish to enter the field. It is partially to fill this need that the present treatise aims.
Download or read book Defects and Surface Induced Effects in Advanced Perovskites written by Gunnar Borstel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: Complex oxide materials, especially the ABO3-type perovskite materials, have been attracting growing scientific interest due to their unique electro-optical properties, leading to photorefractive effects that form the basis for such devices as holographic storage, optical data processing and phase conjugation. The optical and mechanical properties of non-metals are strongly affected by the defects and impurities that are unavoidable in any real material. Nanoscopically sized surface effects play an important role, especially in multi-layered ABO3 structures, which are good candidates for high capacity memory cells. The 51 papers presented here report the latest developments and new results and will greatly stimulate progress in high-tech technologies using perovskite materials.
Download or read book Point and Extended Defects in Semiconductors written by Giorgio Benedek and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
Download or read book Defect Studies in Metals Alloys and Oxides by Positron Annihilation Spectroscopy and Related Techniques written by Sahil Agarwal and published by . This book was released on 2021 with total page 159 pages. Available in PDF, EPUB and Kindle. Book excerpt: Positrons administer a unique non-destructive approach to probe materials with atomic-scale sensitivity and provide reliable information about the nature and size of defects. This study reflects on the powerful capabilities of positron annihilation spectroscopy (PAS) to characterize point defects at atomic-scale, which can be crucial in the development of relevant material for a wide range of applications like nuclear reactors, medical sciences, optoelectronic devices, nanotechnology, polymers etc. The work presented in this dissertation aims to gain a fundamental understanding of the defect structures in three unique material systems: Fe metal, Fe-Cr alloy, and Ce:YAG oxide by applying the methodology and concepts of PAS. A wide range of other complementary characterization techniques has also been employed to enhance the understanding. The depth-resolved PAS was used to identify vacancy clusters in ion irradiated Fe and measure their density as a function of depth. PAS measurements uncovered the structure of vacancy clusters and the change in their size and density with irradiation dose. Combining with TEM measurements led to discovering a novel mechanism for the interaction of cascade damage with voids in ion-irradiated materials.The effect of Cr alloying on the formation and evolution of atomic size clusters induced by ion irradiation in Fe-Cr alloys was also investigated using depth-resolved PAS measurements. Combining with atomic probe tomography (APT), a possible explanation for the long-standing question about the well-known resistance to radiation in Fe-Cr alloys was addressed. It was attributed to the stabilization of vacancy clusters around Cr atoms that act as indirect sinks for radiation-induced defects.The final part of this work focuses on studying the role of defects on the luminescence properties of an important photonic material, Ce:YAG. The work reports an interesting mechanism that modifies and completely reverses the photoluminescence (PL) temperature-dependent kinetics. Further, it is shown that PL temperature-dependent kinetics can be controlled by modifying microstructure and engineering defects.
Download or read book Progress in the Study of Point Defects written by Masao Dōyama and published by . This book was released on 1977 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Electronic Structure of Point Defects written by Gunther K. Wertheim and published by North-Holland. This book was released on 1971 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects and Diffusion in Semiconductors written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2002-11-11 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This fifth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2001 to mid-2002. The scope of this coverage again includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics" series. However, the invited papers this time deal exclusively with staple semiconducting materials: including work on interstitial clusters, intrinsic point defects, and {113} defects in silicon; defect states in InAs quantum dots and defect generation at ZnSe/GaAs interfaces. There are also papers treating a wide range of general themes: such as tracer diffusion in a concentrated lattice gas, defect luminescence in layered chalcogenide semiconductors, defect formation after laser thermal processing, redistribution of point defects in an inhomogeneous temperature field, and very general mathematical techniques for determining basic diffusion parameters.
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976-05 with total page 912 pages. Available in PDF, EPUB and Kindle. Book excerpt:
