Download or read book Relationship Between the Charging Damage of Test Structures and the Deposited Charge on Unpatterned Wafers Exposed to an Electron Cyclotron Resonance Plasma written by Cristian cismaru and published by . This book was released on 1997 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Charging Damage written by Kin P. Cheung and published by Springer Science & Business Media. This book was released on 2000-10-04 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the 50 years since the invention of transistor, silicon integrated circuit (IC) technology has made astonishing advances. A key factor that makes these advances possible is the ability to have precise control on material properties and physical dimensions. The introduction of plasma processing in pattern transfer and in thin film deposition is a critical enabling advance among other things. In state of the art silicon Ie manufacturing process, plasma is used in more than 20 different critical steps. Plasma is sometimes called the fourth state of matter (other than gas, liquid and solid). It is a mixture of ions (positive and negative), electrons and neutrals in a quasi-neutral gaseous steady state very far from equilibrium, sustained by an energy source that balances the loss of charged particles. It is a very harsh environment for the delicate ICs. Highly energetic particles such as ions, electrons and photons bombard the surface of the wafer continuously. These bombardments can cause all kinds of damage to the silicon devices that make up the integrated circuits.
Download or read book Semiconductor Process Reliability in Practice written by Zhenghao Gan and published by McGraw Hill Professional. This book was released on 2012-10-06 with total page 623 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proven processes for ensuring semiconductor device reliability Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide. Coverage includes: Basic device physics Process flow for MOS manufacturing Measurements useful for device reliability characterization Hot carrier injection Gate-oxide integrity (GOI) and time-dependent dielectric breakdown (TDDB) Negative bias temperature instability Plasma-induced damage Electrostatic discharge protection of integrated circuits Electromigration Stress migration Intermetal dielectric breakdown
Download or read book Digest of Technical Papers written by and published by . This book was released on 2003 with total page 1020 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma parameter Dependence of Thin oxide Charging Damage to Microelectronic Test Structures in an Electron cyclotron resonance Plasma written by James Benedict Friedmann and published by . This book was released on 1995 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Effects of Vacuum ultraviolet Radiation on the Plasma induced Charging of Patterned dielectric Materials written by Ganesh Upadhyaya and published by . This book was released on 2008 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2668 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Effects of Processing Induced Damage on Electrical Conduction Mechanisms and Time dependent Dielectric Breakdown of Low k Organosilicates written by and published by . This book was released on 2013 with total page 227 pages. Available in PDF, EPUB and Kindle. Book excerpt: During plasma processing, low-k dielectric materials are necessarily exposed to a variety of potential damage sources, including energetic charged-particle bombardment, photon irradiation, and interaction with gas-phase radicals. Due to the possibility of significant modification of the electrical properties of low-k dielectrics, exposure to these damage sources can have deleterious effects on the long-term reliability of low-k materials. This work examines the role of plasma-processing-induced damage on leakage currents and time-dependent dielectric breakdown in low-k organosilicates. For this work, two types of organosilicate dielectrics were studied: PECVD SiCOH and a silsesquioxane-based photopatternable low-k material. ℗Ơ℗Ơ℗ƠTo determine the effects of processing-induced damage on low-k organosilicate materials, an electron-cyclotron resonance plasma reactor was used to expose low-k dielectrics to charged particle bombardment and energetic photon radiation. The UW-Madison synchrotron was also used as a source of high-intensity monochromatic VUV radiation. Leakage-current conduction mechanisms in pristine and plasma-exposed low-k organosilicate dielectrics were investigated using deposited MIS structures and ramped-voltage current-voltage characteristics. Schottky emission and Poole-Frenkel conduction were identified as the dominant conduction mechanisms in both materials. Plasma exposure was found to increase leakage currents and reduce breakdown voltage, and it was shown that this effect is driven by ion-bombardment energy at the sample surface. X-ray photoelectron spectroscopy (XPS) measurements confirmed plasma-induced carbon loss and formation of a thin oxide-like layer near the surface leading to degraded electrical performance. Measurements of the bandgap energy in low-k organosilicates were made by examining the onset of inelastic energy loss from XPS measurements. For UV-cured SiCOH films, the bandgap energy is measured to be 7.75 eV +/- 0.5 eV, and a bandgap of 8.25 +/- 0.5 eV is found for PPLK materials. Time-dependent dielectric breakdown (TDDB) measurements were made on unexposed, VUV-exposed, and plasma-exposed UV-cured SiCOH. Weibull statistics were used to investigate the dielectric lifetimes. It was found that processing-induced damage results in decreased lifetime and reduced charge-to-breakdown.
Download or read book Damage to III V Devices During Electron Cyclotron Resonance Chemical Vapor Deposition written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs-based metal semiconductor field effect transistors (MESFETS), heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) have been exposed to ECR SiJ & /NH3 discharges for deposition of SiNX passivating layers. The effect of source power, rf chuck power, pressure and plasma composition have been investigated. Effects due to both ion damage and hydrogenation of dopants are observed. For both HEMTs and MESFETS there are no conditions where substantial increases in channel sheet resistivity are not observed, due primarily to (Si-H)O complex formation. In HBTs the carbon-doped base layer is the most susceptible layer to hydrogenation. Ion damage in all three devices is minimized at low rf chuck power, moderate ECR source power and high deposition rates.
Download or read book Plasma Processing of Materials written by National Research Council and published by National Academies Press. This book was released on 1991-02-01 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: Plasma processing of materials is a critical technology to several of the largest manufacturing industries in the worldâ€"electronics, aerospace, automotive, steel, biomedical, and toxic waste management. This book describes the relationship between plasma processes and the many industrial applications, examines in detail plasma processing in the electronics industry, highlights the scientific foundation underlying this technology, and discusses education issues in this multidisciplinary field. The committee recommends a coordinated, focused, and well-funded research program in this area that involves the university, federal laboratory, and industrial sectors of the community. It also points out that because plasma processing is an integral part of the infrastructure of so many American industries, it is important for both the economy and the national security that America maintain a strong leadership role in this technology.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 2021-10-08 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Download or read book Physics Briefs written by and published by . This book was released on 1991 with total page 1586 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1994 with total page 976 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ultraclean Surface Processing of Silicon Wafers written by Takeshi Hattori and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 634 pages. Available in PDF, EPUB and Kindle. Book excerpt: A totally new concept for clean surface processing of Si wafers is introduced in this book. Some fifty distinguished researchers and engineers from the leading Japanese semiconductor companies, such as NEC, Hitachi, Toshiba, Sony and Panasonic as well as from several universities reveal to us for the first time the secrets of these highly productive institutions. They describe the techniques and equipment necessary for the preparation of clean high-quality semiconductor surfaces as a first step in high-yield/high-quality device production. This book thus opens the door to the manufacturing of reliable nanoscale devices and will be extremely useful for every engineer, physicist and technician involved in the production of silicon semiconductor devices.
Download or read book Fundamentals of Semiconductor Manufacturing and Process Control written by Gary S. May and published by John Wiley & Sons. This book was released on 2006-05-26 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt: A practical guide to semiconductor manufacturing from processcontrol to yield modeling and experimental design Fundamentals of Semiconductor Manufacturing and Process Controlcovers all issues involved in manufacturing microelectronic devicesand circuits, including fabrication sequences, process control,experimental design, process modeling, yield modeling, and CIM/CAMsystems. Readers are introduced to both the theory and practice ofall basic manufacturing concepts. Following an overview of manufacturing and technology, the textexplores process monitoring methods, including those that focus onproduct wafers and those that focus on the equipment used toproduce wafers. Next, the text sets forth some fundamentals ofstatistics and yield modeling, which set the foundation for adetailed discussion of how statistical process control is used toanalyze quality and improve yields. The discussion of statistical experimental design offers readers apowerful approach for systematically varying controllable processconditions and determining their impact on output parameters thatmeasure quality. The authors introduce process modeling concepts,including several advanced process control topics such asrun-by-run, supervisory control, and process and equipmentdiagnosis. Critical coverage includes the following: * Combines process control and semiconductor manufacturing * Unique treatment of system and software technology and managementof overall manufacturing systems * Chapters include case studies, sample problems, and suggestedexercises * Instructor support includes electronic copies of the figures andan instructor's manual Graduate-level students and industrial practitioners will benefitfrom the detailed exami?nation of how electronic materials andsupplies are converted into finished integrated circuits andelectronic products in a high-volume manufacturingenvironment. An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment. An Instructor Support FTP site is also available.
