Download or read book Proceedings of the Symposium on Reduced Temperature Processing for VLSI written by Rafael Reif and published by . This book was released on 1986 with total page 634 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reduced Temperature Processing for VLSI written by Electrochemical Society. Dielectrics and Insulation Division and published by . This book was released on 1986 with total page 609 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reduced temperature processing for VLSI written by Electrochemical Society and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reduced Temperature Processing for VLSI written by Symposium on Reduced Temperature Processing for VL and published by . This book was released on with total page 619 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Reduced Thermal Processing for ULSI written by R.A. Levy and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt: As feature dimensions of integrated circuits shrink, the associated geometrical constraints on junction depth impose severe restrictions on the thermal budget for processing such devices. Furthermore, due to the relatively low melting point of the first aluminum metallization level, such restrictions extend to the fabrication of multilevel structures that are now essential in increasing packing density of interconnect lines. The fabrication of ultra large scale integrated (ULSI) devices under thermal budget restrictions requires the reassessment of existing and the development of new microelectronic materials and processes. This book addresses three broad but interrelated areas. The first area focuses on the subject of rapid thermal processing (RTP), a technology that allows minimization of processing time while relaxing the constraints on high temperature. Initially developed to limit dopant redistribution, current applications of RTP are shown here to encompass annealing, oxidation, nitridation, silicidation, glass reflow, and contact sintering. In a second but complementary area, advances in equipment design and performance of rapid thermal processing equipment are presented in conjunction with associated issues of temperature measurement and control. Defect mechanisms are assessed together with the resulting properties of rapidly deposited and processed films. The concept of RTP integration for a full CMOS device process is also examined together with its impact on device characteristics.
Download or read book Handbook of Semiconductor Manufacturing Technology written by Yoshio Nishi and published by CRC Press. This book was released on 2017-12-19 with total page 1720 pages. Available in PDF, EPUB and Kindle. Book excerpt: Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.
Download or read book Thin Film Processes II written by Werner Kern and published by Elsevier. This book was released on 2012-12-02 with total page 881 pages. Available in PDF, EPUB and Kindle. Book excerpt: This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. - Provides an all-new sequel to the 1978 classic, Thin Film Processes - Introduces new topics, and several key topics presented in the original volume are updated - Emphasizes practical applications of major thin film deposition and etching processes - Helps readers find the appropriate technology for a particular application
Download or read book Microelectronic Materials and Processes written by R.A. Levy and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 992 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary thrust of very large scale integration (VLS!) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS!) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS!.
Download or read book VLSI Electronics written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics: Microstructure Science, Volume 5 considers trends for the future of very large scale integration (VLSI) electronics and the scientific base that supports its development. This book discusses the automation for VLSI manufacture, silicon material properties for VLSI circuitry, and high-performance computer packaging and thin-film multichip module. The nanometer-scale fabrication techniques, high-density CCD memories, and solid-state infrared imaging are also elaborated. This text likewise covers the impact of microelectronics upon radar systems and quantum-mechanical limitations on device performance. This volume is a good source for scientists and engineers who wish to become familiar with VLSI electronics, device designers concerned with the fundamental character of and limitations to device performance, systems architects who will be charged with tying VLSI circuits together, and engineers conducting work on the utilization of VLSI circuits in specific areas of application.
Download or read book Chemistry of the Semiconductor Industry written by S.J. Moss and published by Springer Science & Business Media. This book was released on 1989-02-28 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the chemistry of the major processes involved in the manufacture of integrated circuits. The authors describe all the major processes in use, together with some interesting processes which are currently being developed and hold future promise. Each chapter covers the current state of knowledge of the underlying chemistry of a particular process, and identifies areas of uncertainty requiring further research.
Download or read book Bibliographic Guide to Conference Publications written by New York Public Library. Research Libraries and published by . This book was released on 1989 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vols. for 1975- include publications cataloged by the Research Libraries of the New York Public Library with additional entries from the Library of Congress MARC tapes.
Download or read book Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductivity written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 1995 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Integrated Circuits written by Dawon Kahng and published by Academic Press. This book was released on 2013-10-22 with total page 371 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Integrated Circuits, Part 2 covers some of the most promising approaches along with the new understanding of processing-related areas of physics and chemistry. The first chapter is about the transient thermal processing of silicon, including annealing with directed-energy beams and rapid isothermal annealing; adiabatic annealing with laser and electron beams; pulsed melting; thermal flux annealing; rapid isothermal annealing; and several applications stemming from rapid annealing and semiconductor processing with directed-energy beams. The second chapter is concerned with the use of electron cyclotron resonance plasmas in two important materials processing techniques: reactive ion-beam etching and plasma deposition. The last chapter of the book deals with the exploding area of very large scale integration processing and process simulation. Physicists, chemists, and engineers involved in silicon integrated circuits will find the book invaluable.
Download or read book Proceedings of the Ninth International Conference on Chemical Vapor Deposition 1984 written by McD. Robinson and published by . This book was released on 1984 with total page 828 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Silicon written by and published by . This book was released on 1986 with total page 1144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Temperature Aware VLSI Design for Reduced Power and Reliability Enhancement written by Aseem Gupta and published by . This book was released on 2009 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Surface Passivation and Junction Engineering in Silicon written by Gaurav Thareja and published by Stanford University. This book was released on 2011 with total page 99 pages. Available in PDF, EPUB and Kindle. Book excerpt: The planar silicon MOSFET is facing diminishing performance returns in improvement from device geometry scaling. Two alternative devices are being explored as possible solutions to this problem. The first contender is a multi-gate device (FINFET or surround gate) and the other is a MOSFET with high mobility channel material such as germanium, III-V or carbon. Ge has emerged as an important materials platform during recent years. With its high carrier mobility and the ability to detect and emit photons at telecommunications wavelengths, Ge is an attractive candidate for applications in both high performance electronics and optoelectronics. Moreover due to its compatibility with conventional CMOS fabrication, it can be processed using the standard manufacturing techniques that are currently used for silicon. However Ge does present a number of unique challenges that must be overcome, including issues of surface passivation, low n-type dopant solubility, and high dopant diffusivity. In this work, the unique properties of surface passivation enabled by radical oxidation are discussed. Some of the highlights are low temperature processing, substrate orientation independent growth rate of dielectric and low interface density. Subsequently, this radical oxidation is applied to 3D vertical gate all around (GAA) silicon MOSFET devices. Higher drive current, lower gate leakage and higher gate dielectric breakdown voltage are demonstrated for GAA devices using radical oxidation in comparison to thermal oxidation In the second part, radical oxidation is investigated for GeO2 growth as an interfacial layer in high-k / Ge gate stack. Using MOSCAP and n-MOSFET devices on Ge, low interface state density combined with drive current and electron mobility enhancement is demonstrated for Ge devices. In the third part, the source/drain junctions for Ge are studied. Ultra-shallow junctions using plasma immersion ion implantation are demonstrated. High n-type dopant activation in Ge using laser annealing is realized along with high performance diodes, significant reduction of contact resistance and integration in a MOSFET process flow.
