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Book Reactor Design for Chemical Vapor Deposition

Download or read book Reactor Design for Chemical Vapor Deposition written by Stephen J. Cottrell and published by . This book was released on 1982 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Novel Reactor Design and Method for Atmospheric Pressure Chemical Vapor Deposition of Micro and Nano SiO2 x Films in Photovoltaic Applications

Download or read book Novel Reactor Design and Method for Atmospheric Pressure Chemical Vapor Deposition of Micro and Nano SiO2 x Films in Photovoltaic Applications written by Esmail Issa and published by BoD – Books on Demand. This book was released on 2022-01-01 with total page 243 pages. Available in PDF, EPUB and Kindle. Book excerpt: A laboratory-scale reactor and a novel method for the atmospheric pressure chemical vapor deposition (APCVD) of SiO2-x films are developed. The deposited films are investigated to synthesize heterogeneously upon the substrate surface with the elimination of the so-called gas-phase reaction, hence preventing parasitic oxide particles upon the substrate surface and the reactor inner walls. The films are extensively inspected in terms of chemical and optical properties and utilized for crystalline silicon solar cell applications. Simple reactor design with low safety measures, a wide range of deposition rates, high film resilience, and stability for the intended applications are successfully achieved. The newly developed APCVD SiO2-x is proven to protect the Si wafer surface against texturing in alkaline and acidic solutions. Electroplated metallization schemes of heterojunction and passivated emitter rear contact solar cells are examined with the use of the SiO2-x as a masking layer in the grid electrode-free area.

Book Design and Characterization of a Chemical Vapor Deposition Reactor

Download or read book Design and Characterization of a Chemical Vapor Deposition Reactor written by Patricia S. Moravec and published by . This book was released on 1987 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Chemical Vapor Deposition of GaAsl x superscript P x Reactor Design and Growth Kinetics

Download or read book Chemical Vapor Deposition of GaAsl x superscript P x Reactor Design and Growth Kinetics written by Saleem Anwar Shaikh and published by . This book was released on 1972 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Design and Development of a Low Pressure Chemical Vapor Deposition Reactor for Growth of Cubic  3C  Silicon Carbide

Download or read book Design and Development of a Low Pressure Chemical Vapor Deposition Reactor for Growth of Cubic 3C Silicon Carbide written by Michael Peter Orthner and published by . This book was released on 2006 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Design and Modeling of Chemical Vapor Deposition Reactors

Download or read book Design and Modeling of Chemical Vapor Deposition Reactors written by William L. Holstein and published by . This book was released on 1992 with total page 101 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Design and Development of a Silicon Carbide Chemical Vapor Deposition Reactor

Download or read book Design and Development of a Silicon Carbide Chemical Vapor Deposition Reactor written by Matthew T. Smith and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: The design and development of a reactor to make this process controlled and repeatable can be accomplished using theoretical and empirical tools. Fluid flow modeling, reactor sizing, low-pressure pumping and control are engineering concepts that were explored. Work on the design and development of an atmospheric pressure cold-wall CVD (APCVD) reactor will be presented. A detailed discussion of modifications to this reactor to permit hot-wall, low-pressure CVD (LPCVD) operation will then be presented. The consequences of this process variable change will be discussed as well as the necessary design parameters. Computational fluid dynamic (CFD) calculations, which predict the flow patterns of gases in the reaction tube, will be presented. Feasible CVD reactor design that results in laminar fluid flow control is a function of the prior mentioned techniques and will be presented.

Book Reactor Design for Uniform Chemical Vapor Deposition grown Films Without Substrate Rotation

Download or read book Reactor Design for Uniform Chemical Vapor Deposition grown Films Without Substrate Rotation written by and published by . This book was released on 1987 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.

Book Design and Modelling of Chemical Vapor Deposition Reactors

Download or read book Design and Modelling of Chemical Vapor Deposition Reactors written by William L. Holstein and published by . This book was released on 1992 with total page 101 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Chemical Vapor Deposition Reactor Design and Process Optimization for the Deposition of Copper Thin Films

Download or read book Chemical Vapor Deposition Reactor Design and Process Optimization for the Deposition of Copper Thin Films written by Alan Thomas Stephens and published by . This book was released on 1994 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt: "A chemical vapor deposition reactor has been designed, built, and optimized for the deposition of copper thin films. The single wafer, stagnation point flow reactor features: six inch substrate capacity; direct metering and vaporization of liquid precursor; reactant introduction into the reactor chamber through a multi-zone precursor injection manifold; optional variable power (0-300W) RF plasma assist; manual loadlock; and, a computer control interface. Substrate temperature uniformity has been measured to be better than 1% across the substrate over a wide range of temperatures. The injection manifold was designed for precise tailoring of gas flow characteristics across the substrate, incorporating four concentric, independently adjustable zones, each of which is controlled by a metering valve. Both Cu(I) trimethylvinylsilane hexaf luoroacetylacetonate (tmvs hfac) and Cu(II) hfac precursor chemistries have been used. Film properties were determined by four-point probe, surface profilometer, and scanning electron microscope (SEM). The Cu(I) tmvs hfac chemistry yielded the best results with deposition rates exceeding lOOOA/min, average film resistivities below 1.80 ^Q*cm, excellent step coverage, and complete gap fill."--Abstract.

Book Principles of Chemical Vapor Deposition

Download or read book Principles of Chemical Vapor Deposition written by Daniel Dobkin and published by Springer Science & Business Media. This book was released on 2003-04-30 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: Principles of Chemical Vapor Deposition provides a simple introduction to heat and mass transfer, surface and gas phase chemistry, and plasma discharge characteristics. In addition, the book includes discussions of practical films and reactors to help in the development of better processes and equipment. This book will assist workers new to chemical vapor deposition (CVD) to understand CVD reactors and processes and to comprehend and exploit the literature in the field. The book reviews several disparate fields with which many researchers may have only a passing acquaintance, such as heat and mass transfer, discharge physics, and surface chemistry, focusing on key issues relevant to CVD. The book also examines examples of realistic industrial reactors and processes with simplified analysis to demonstrate how to apply the principles to practical situations. The book does not attempt to exhaustively survey the literature or to intimidate the reader with irrelevant mathematical apparatus. This book is as simple as possible while still retaining the essential physics and chemistry. The book is generously illustrated to assist the reader in forming the mental images which are the basis of understanding.

Book Surface Engineering Series Volume 2  Chemical Vapor Deposition

Download or read book Surface Engineering Series Volume 2 Chemical Vapor Deposition written by Edited by Jong-Hee Park and T.S. Sudarshan and published by ASM International. This book was released on 2000-05-01 with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook provides guidelines and practical information on the chemical vapor deposition (CVD) process for surface engineering design, product development, and manufacturing. The first of the 14 chapters discuss the basic principles of CVD thermodynamics and kinetics, stresses and mechanical sta

Book Chemical Vapor Deposition

Download or read book Chemical Vapor Deposition written by Srinivasan Sivaram and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: In early 1987 I was attempting to develop a CVD-based tungsten process for Intel. At every step ofthe development, information that we were collecting had to be analyzed in light of theories and hypotheses from books and papers in many unrelated subjects. Thesesources were so widely different that I came to realize there was no unifying treatment of CVD and its subprocesses. More interestingly, my colleagues in the industry were from many disciplines (a surface chemist, a mechanical engineer, a geologist, and an electrical engineer werein my group). To help us understand the field of CVD and its players, some of us organized the CVD user's group of Northern California in 1988. The idea for writing a book on the subject occurred to me during that time. I had already organized my thoughts for a course I taught at San Jose State University. Later Van Nostrand agreed to publish my book as a text intended for students at the senior/first year graduate level and for process engineers in the microelectronics industry, This book is not intended to be bibliographical, and it does not cover every new material being studied for chemical vapor deposition. On the other hand, it does present the principles of CVD at a fundamental level while uniting them with the needs of the microelectronics industry.

Book Effect of Fluid Dynamics and Reactor Design on the Epitaxial Growth of Gallium Nitride on Silicon Substrate by Metalorganic Chemical Vapor Deposition

Download or read book Effect of Fluid Dynamics and Reactor Design on the Epitaxial Growth of Gallium Nitride on Silicon Substrate by Metalorganic Chemical Vapor Deposition written by Yungeng Gao and published by . This book was released on 2000 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: