Download or read book Positron Annihilation Spectroscopy of Voids in Silicon written by Nathan Rees Potter and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Positron Annihilation in Semiconductors written by Reinhard Krause-Rehberg and published by Springer Science & Business Media. This book was released on 1999 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.
Download or read book Positron Annihilation Spectroscopy Applied to Silicon based Materials written by James Williams Taylor and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Positron Annihilation Studies of Defects in Silicon written by Peter J. Simpson and published by . This book was released on 1992 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Principles and Applications of Positron Positronium Chemistry written by P. E. Mallon and published by World Scientific. This book was released on 2003 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive description of the principles and applications of positron and positronium chemistry. Pedagogical and tutorial in nature, it should be useful for graduate students and researchers in positron annihilation spectroscopy. The contributors are scientists in the frontiers of research.
Download or read book Principles And Applications Of Positron And Positronium Chemistry written by Jerry Y C Jean and published by World Scientific. This book was released on 2003-04-04 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive description of the principles and applications of positron and positronium chemistry. Pedagogical and tutorial in nature, it will be ideal for graduate students and researchers in the area of positron annihilation spectroscopy. The contributing authors are authoritative scientists prominent in the frontiers of research, actively pursuing positron annihilation research on chemical and applied systems.
Download or read book Investigation of the Lifetime Spectrum of Monoenergetic Positrons in Silicon Involving Secondary Electrons Emission from a Carbon Foil as Start Signal and Positron Annihilation Spectroscopy Studies of Strontium Titante written by Yu Zhang and published by Open Dissertation Press. This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Investigation of the Lifetime Spectrum of Monoenergetic Positrons in Silicon Involving Secondary Electrons Emission From a Carbon Foil as Start Signal, and Positron Annihilation Spectroscopy Studies of Strontium Titante" by Yu, Zhang, 張毓, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: A proposed design of the variable energy positron annihilation spectroscopy (VEPALS) system based on secondary electron (SE) emission from a thin carbon foil has been investigated practically. The SE yield and the positron transmission coefficient were investigated as a function of the positron beam energy, the annular electrode potentials, and the column lengths of the annular electrode. The positron lifetime spectra of single crystal p-type silicon(Si) sample under different annular electrode potentials were analyzed. The result gives a supposed annular electrode potential of 1.5 kV. In view of this, the positron lifetime spectra were measured under different positron beam energy by fixing the annular electrode potential. It can be seen that all the spectra have the main p-type Si bulk lifetime component of 234 ps occupying more than 60% intensities. The intensity of the 234 ps component reaches up to 84.5 1.3 % when the positron beam energy is 15 keV. Further, the origin of the satellite peaks in the positron lifetime spectra are also investigated. It has been shown that the satellite peaks is attributed to the overflowing positrons on the MCP detector. The single crystal strontium titanate (STO) substrates after vacuum annealing treatment have been investigated in detail by several experimental techniques. The crystallization changes induced by the vacuum annealing were investigated by X-ray diffraction(XRD). Secondary phases were occurred after annealing treatment. The measured X-ray photoelectron spectroscopy (XPS) at O1s and C1s core levels were analyzed. The additional peaks after annealing are attributed to hydroxyl species, C-OH compounds, and carbonates. The variable energy Doppler broadening spectroscopy (VEDBS) and the traditional coincidence positron annihilation lifetime spectroscopy (PALS) were used to probe defects in STO samples. For long annealing time samples, the S parameters decrease below the reference level. The S-Wplot suggests that almost the same type of vacancy defects were induced during the annealing treatment. The positron lifetime results suggest that the main defects in annealed samples are oxygen monovacancies or divacancies and Sr-O vacancy complexes. The sample with annealing time of 110h has minimum positron effective diffusion length and maximum average lifetime, which is attributed to the increase of the vacancy-type defects during the long annealing treatment. DOI: 10.5353/th_b5194741 Subjects: Positron annihilation Electron spectroscopy Strontium titanate
Download or read book Investigation of Defects in Silicon by Means of the Positron Annihilation Technique written by Khaled Abdurahman and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Positron Annihilation written by Toshio Hyodo and published by . This book was released on 2004 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: There is no doubt that, when it comes to the study of the structures and defects of materials, there is presently no technique that rivals positron annihilation. The increasing demands for higher accuracy and reliability provide a constant stimulus to the field, and the present work presents the newest and most important scientific discoveries made in the field of positron annihilation. Many important new results concerning positron and positronium studies of nano-materials, defects, porous materials, low-k dielectrics, polymers, liquids, atomic physics and new instrumentation are reported in the present contributions; presented by experts from all over the world. There can be no better way of keeping up with this rapidly advancing field.
Download or read book SOME POSITRON ANNIHILATION STU written by King-Fung Ho and published by Open Dissertation Press. This book was released on 2017-01-27 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Some Positron Annihilation Studies on Highly Doped and Supersaturated N-type Silicon" by King-fung, Ho, 何競豐, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled SOME POSITRON ANNIHILATION STUDIES ON HIGHLY DOPED AND SUPERSATURATED N-TYPE SILICON Submitted by HO KING FUNG for the degree of Doctor of Philosophy at The University of Hong Kong in July 2004 Positron Annihilation Spectroscopy (PAS) is a non-destructive technique that can be extensively used to probe the point defect structures found in solids. The basic physics behind PAS such as implantation, transport, vacancy trapping and annihilation are reviewed together with the various experimental techniques. Deconvolution algorithms have been applied to Coincidence Doppler Broadening Spectroscopy (CDBS) to improve the effective momentum resolution of the technique. The CDBS system instrumental resolution function is obtained using 85 the 514-keV line from Sr. The generalized least square method with Tikonov-Miller regularization, which incorporates a priori non-negativity constraints, is found to be very effective. Monte-Carlo simulations of CDBS have been used to optimize the deconvolution. The deconvolution technique, when applied to a series of well annealed polycrystalline metals, gives results that are found to be comparable quality-wise to those obtained by one dimensional Angular Correlation of Annihilation Radiation (ACAR). An attempt was made to evaluate the significance of ACAR data from positrons trapped in a crystal defect by defect studying the E-center (vacancy-dopant pair) in silicon. The Fourier transformation of the ACAR momentum distribution coming from positrons trapped at the E-center was studied. This gives in real-space the autocorrelation function of the positron-electron wavefunction product at the site of annihilation. Employing the ratio of the autocorrelation function for the E-center and bulk silicon, the positron binding energy to the E-center was estimated. It has been possible to approximately isolate that part of the E-centers' autocorrelation function that originates from the localized defect orbitals and to see spatial features relating to atomic positions in the E-center. Nonequilibrium processing consisting of ion implantation followed by annealing has been employed to produce supersaturated Antimony doped silicon. The defect structure of the ion implanted region and the post-implanted region have been studied using the Variable Energy Positron Annihilation Spectroscopy (VEPAS) technique. Evidence is given that positrons are trapped into precipitates or get trapped at precipitate boundaries at annealing temperatures less than 600C. Surprisingly, new vacancy defects appear in the implanted region at annealing temperatures over 600C. This is tentatively attributed to the fact that Sb precipitates begin to dissolve at these temperatures into VSb type complexes. DOI: 10.5353/th_b3028710 Subjects: Positron annihilation Electron spectroscopy Silicon crystals - Defects
Download or read book Positron Annihilation ICPA 11 written by Y. C. Jean and published by . This book was released on 1997 with total page 876 pages. Available in PDF, EPUB and Kindle. Book excerpt: For one and a half decades, the application of positron annihilation to condensed-matter physics concentrated on the study of the Fermi surfaces of metals and alloys. As other, often more powerful, techniques for performing this type of study were developed, it appeared that condensed-matter positron physics was going to be relegated to being a niche interest. However, the situation changed dramatically when it was found that measurements of positron annihilation in metals were sensitive to the structures of well-known defects. This discovery, and subsequent research made it a major tool in materials science.
Download or read book Handbook of Silicon Semiconductor Metrology written by Alain C. Diebold and published by CRC Press. This book was released on 2001-06-29 with total page 703 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing more than 300 equations and nearly 500 drawings, photographs, and micrographs, this reference surveys key areas such as optical measurements and in-line calibration methods. It describes cleanroom-based measurement technology used during the manufacture of silicon integrated circuits and covers model-based, critical dimension, overlay
Download or read book Investigation of the Lifetime Spectrum of Monoenergetic Positrons in Silicon Involving Secondary Electrons Emission from a Carbon Foil as Start Signal and Positron Annihilation Spectroscopy Studies of Strontium Titante written by 張毓 and published by . This book was released on 2013 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Positron Annihilation Spectroscopy Studies of 6H N type Silicon Carbide and Zn doped P type Gallium Antimonide written by and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Development and Optimization of a Positron Annihilation Lifetime Spectrometer to Measure Nanoscale Defects in Solids and Borane Cage Molecules in Aqueous Nitrate Solutions written by Matthew A. Ross and published by . This book was released on 2008 with total page 182 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Positron Spectroscopy of Solids written by Alfredo Dupasquier and published by IOS Press. This book was released on 1995 with total page 830 pages. Available in PDF, EPUB and Kindle. Book excerpt: The lifetime of a positron inside a solid is normally less than a fraction of nanosecond. This is a very short time on a human scale, but is long enough to enable the positron to visit an extended region of the material, and to sense the atomic and electronic structure of the environment. Thus, we can inject a positron in a sample to draw from it some signal giving us information on the microscopic properties of the material. This idea has been successfully developed in a number of positron-based techniques of physical analysis, with resolution in energy, momentum, or position. The complex of these techniques is what we call now positron spectroscopy of solids. The field of application of the positron spectroscopy extends from advanced problems of solid-state physics to industrial applications in the area of characterization of high-tech materials. This volume focuses the attention on the physics that can be learned from positron-based methods, but also frames those methods in a wider context including other experimental approaches. It can be considered as a textbook on positron spectroscopy of solids, the sort of book that the newcomer takes for his approach to this field, but also as a useful research tool for the expert.
Download or read book Positron Annihilation Induced Auger Electron Spectroscopy from the GaAs 100 and Si 111 Surfaces and Positron electron Impact Ionization Cross sections from Si 111 written by Shannval Starnes and published by . This book was released on 2001 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
