Download or read book Encyclopedia of Microfluidics and Nanofluidics written by Dongqing Li and published by Springer Science & Business Media. This book was released on 2008-08-06 with total page 2242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covering all aspects of transport phenomena on the nano- and micro-scale, this encyclopedia features over 750 entries in three alphabetically-arranged volumes including the most up-to-date research, insights, and applied techniques across all areas. Coverage includes electrical double-layers, optofluidics, DNC lab-on-a-chip, nanosensors, and more.

Download or read book The Physics and Technology of Amorphous SiO2 written by Roderick A.B. Devine and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized Si0 and progressing 2 towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiOz and in particular, buried oxide layers formed by ion implantation. Although every effort was made at the conference to ensure that each presentation occured in its most obvious session, in editing the proceedings we have taken the liberty of changing the order where it seems that a paper was in fact more appropriate to an alternative section. In any event, because of the natural overlap of subjects, many papers could have been suitably placed in several different sections.

Download or read book Electrochemistry of Silicon and Its Oxide written by Xiaoge Gregory Zhang and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: It may be argued that silicon, carbon, hydrogen, oxygen, and iron are among the most important elements on our planet, because of their involvement in geological, biol- ical, and technological processes and phenomena. All of these elements have been studied exhaustively, and voluminous material is available on their properties. Included in this material are numerous accounts of their electrochemical properties, ranging from reviews to extensive monographs to encyclopedic discourses. This is certainly true for C, H, O, and Fe, but it is true to a much lesser extent for Si, except for the specific topic of semiconductor electrochemistry. Indeed, given the importance of the elect- chemical processing of silicon and the use of silicon in electrochemical devices (e. g. , sensors and photoelectrochemical cells), the lack of a comprehensive account of the electrochemistry of silicon in aqueous solution at the fundamental level is surprising and somewhat troubling. It is troubling in the sense that the non-photoelectrochemistry of silicon seems “to have fallen through the cracks,” with the result that some of the electrochemical properties of this element are not as well known as might be warranted by its importance in a modern technological society. Dr. Zhang’s book, Electrochemical Properties of Silicon and Its Oxide, will go a long way toward addressing this shortcoming. As with his earlier book on the elect- chemistry of zinc, the present book provides a comprehensive account of the elect- chemistry of silicon in aqueous solution.

Download or read book Fundamental Aspects of Silicon Oxidation written by Yves J. Chabal and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.

Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.

Download or read book Silicon Oxide Studies written by Charles Pang-Hsin Ho and published by . This book was released on 1978 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fundamental Aspects of Ultrathin Dielectrics on Si based Devices written by Eric Garfunkel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface 2 written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.

Download or read book Fundamental Aspects of Silicon Oxidation written by Yves J Chabal and published by . This book was released on 2001-04-24 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Surface Properties of Oxidized Silicon written by Else Kooi and published by Springer. This book was released on 2013-12-21 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Oxidation Simulation written by Gabriel Matthew Cuka and published by . This book was released on 1990 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Oxidation Studies of Ultra Low Atomic Step Density Silicon 111 written by Antonio Chandrea Oliver and published by . This book was released on 2001 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Thermal Oxidation of Silicon New Experimental Results and Models written by Eugene A. Irene and published by . This book was released on 1987 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most studies of Silicon oxidation commence with a discussion of the Linear-Parabolic oxidation model developed by a number of workers in the 1960's. The limits of the model are pure diffusion of oxidant for thick Silicon dioxide films and a surface reaction limitation for thin films. The steady state picture of this series reaction scheme is discussed and used to explain new experimental results. New data relevant to Si oxidation is presented on the following subjects: five orientations of Si; photonic excitement; intrinsic film stress; silicide oxidation. The role of electrons on the oxidation kinetics is elucidated. A thermionic emission model for th initial stages of oxidation is proposed.

Download or read book Hydrothermal Reactions for Materials Science and Engineering written by S. Somiya and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: According to the late Professor Emeritus Seitaro Tsuboi,l the word 'hydrothermal' was used as early as 1849 by a British geologist, Sir Roderick Murchison (1792-187 I), in relation to the action of heated water in bringing about change in the earth's crust. The term abounds in later geological literature, and is most frequently met in connection with the processes that take place at a stage near the closing in the course of consolidation of magma. When a cooling magma reaches that stage, the residual liquid contains a large proportion of volatile components, chiefly water, and further cooling results in the formation of minerals of special interest or ore-deposits. A great concern of Tsuboi's as a petrologist was to elucidate the details of the nature of various actions involved in these 'hydrothermal processes', of which little was known. It is remarkable that, in the last few decades, extensive high-temperature and high-pressure experiments, in which water plays an important role, have become practicable in laboratories, owing to the development of new apparatus and new methods. As a result, the knowledge essential to the elucidation of 'hydrothermal processes' has been improved, but is still far from complete.

Download or read book Properties of Elemental and Compound Semiconductors written by Harry C. Gatos and published by . This book was released on 1960 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Oxidation Studies Silicon Orientation Effects on Thermal Oxidation written by Eugene A. Irene and published by . This book was released on 1985 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt: The initial stage of the thermal oxidation of various crystallographic orientations of silicon reveals a complex rate behavior. This behavior is not understood within the conventional linear - parabolic model. A recently revised model which explicitly contains the areal density of Si atoms and mechanical stress effects is shown to provide both a qualitative and somewhat quantitative explanation of the complex substrate orientation effects. The purpose of this study is to analyze the crossover effect in terms of a recently proposed viscous flow model for Si oxidation. This model utilizes the notion of mechanical stress and viscous relaxation in Si02 which occur as a result of the oxidation process on a Si substrate in addition to the other assumptions in the L-P model such as a steady state between the interface reaction and the transport of oxidant through the oxide. It is reported herein that the new viscous flow model provides a reasonable qualitative explanation for the crossover effect and in some instances a quantitative correlation of the effect.

Download or read book VLSI Fabrication Principles written by Sorab K. Ghandhi and published by John Wiley & Sons. This book was released on 1994-03-31 with total page 870 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fully updated with the latest technologies, this edition covers thefundamental principles underlying fabrication processes forsemiconductor devices along with integrated circuits made fromsilicon and gallium arsenide. Stresses fabrication criteria forsuch circuits as CMOS, bipolar, MOS, FET, etc. These diversetechnologies are introduced separately and then consolidated intocomplete circuits. An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment.