Download or read book Nanostructuring for Nitride Light Emitting Diodes and Optical Cavities written by Kwai Hei Li and published by Springer. This book was released on 2015-12-08 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the design and fabrication of novel nanostructures in III-nitride material systems. It introduces an inexpensive and ultra-efficient nanopatterning method – nanosphere lithography (NSL) – used to develop diversely functional nanostructures, including clover-shaped photonic crystals, nanorings, and nanolenses. Furthermore, the research findings previously distributed in various international scientific journals and conference papers are brought together and methodically presented in a unified form. The book is of interest to postgraduate students, university researchers, R&D engineers and scientists in the fields of nanoelectronics, optoelectronics and photonics.
Download or read book Nanostructuring for Nitride Light emitting Diodes and Optical Cavities written by 李攜曦 and published by . This book was released on 2013 with total page 159 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Optical Microcavities written by Anthony H. W. Choi and published by CRC Press. This book was released on 2014-10-06 with total page 511 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book covers a wide range of topics pertaining to resonance in optical cavities. The topics include theory, design, simulation, fabrication, and characterization of micrometer and nanometer scale structures and devices that support cavity resonance via various mechanisms such as Fabry-Perot , whispering gallery, photonic bandgap, and plasmonic modes. The chapters discuss optical cavities that resonate from UV to IR wavelengths and are based on prominent III-V material systems including Al, In, and Ga nitrides, ZnO, and GaAs.
Download or read book Oxide and Nitride Semiconductors written by Takafumi Yao and published by Springer Science & Business Media. This book was released on 2009-03-20 with total page 525 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a unique book devoted to the important class of both oxide and nitride semiconductors. It covers processing, properties and applications of ZnO and GaN. The aim of this book is to provide the fundamental and technological issues for both ZnO and GaN.
Download or read book Nitride Semiconductor Light Emitting Diodes LEDs written by Jian-Jang Huang and published by Woodhead Publishing. This book was released on 2017-10-24 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors. Features new chapters on laser lighting, addressing the latest advances on this topic Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting Provides a comprehensive discussion of gallium nitride on both silicon and sapphire substrates
Download or read book Iii nitride Materials Devices And Nano structures written by Zhe Chuan Feng and published by World Scientific. This book was released on 2017-04-20 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) in these materials and devices, such as high-power and high brightness UV-blue-green-white light emitting diodes (LEDs), UV-blue-green laser diodes (LDs), photo-detectors and various optoelectronics and electronics devices and applications.The Nobel Prize in Physics 2014 was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura 'for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources'. Red and green diodes had been invented since 1960s-70s but without blue LED. Despite considerable efforts, the blue LED had remained a challenge for a long time. The success and inventions on GaN-based LEDs were revolutionary and benefiting for mankind. III-Nitrides-based industry has formed and acquired rapid developments over the world. Incandescent light bulbs lit the 20th century and the 21st century will be lit by LED lamps.Before this book, the editor has edited two books, III-Nitride Semiconductor Materials (2006) and III-Nitride Devices and Nanoengineering (2008), both published by ICP/WSP, in the fields of III-Nitride. The developments of these materials and devices are moving rapidly. Many data or knowledge, some even just published only recently, have been modified and needed to be upgraded. This new book, III-Nitride Materials, Devices and Nano-Structures as the third instalment, will cover the rapid new developments and achievements in the III-Nitride fields, particularly those made since 2009.
Download or read book Nitride Semiconductors and Devices written by Hadis Morkoç and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 511 pages. Available in PDF, EPUB and Kindle. Book excerpt: This timely monograph addresses an important class of semiconductors and devices that constitute the underlying technology for blue lasers. It succinctly treats structural, electrical and optical properties of nitrides and the substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies, light-emitting diodes, and lasers. It also includes many tables and figures detailing the properties and performance of nitride semiconductors and devices.
Download or read book Handbook of Optical Microcavities written by Anthony H. W. Choi and published by CRC Press. This book was released on 2014-10-06 with total page 527 pages. Available in PDF, EPUB and Kindle. Book excerpt: An optical cavity confines light within its structure and constitutes an integral part of a laser device. Unlike traditional gas lasers, semiconductor lasers are invariably much smaller in dimensions, making optical confinement more critical than ever. In this book, modern methods that control and manipulate light at the micrometer and nanometer scales by using a variety of cavity geometries and demonstrate optical resonance from ultra-violet (UV) to infra-red (IR) bands across multiple material platforms are explored. The book has a comprehensive collection of chapters that cover a wide range of topics pertaining to resonance in optical cavities and are contributed by leading researchers in the field. The topics include theory, design, simulation, fabrication, and characterization of micrometer- and nanometer-scale structures and devices that support cavity resonance via various mechanisms such as Fabry–Pérot, whispering gallery, photonic bandgap, and plasmonic modes. The chapters discuss optical cavities that resonate from UV to IR wavelengths and are based on prominent III-V material systems, including Al, In, and Ga nitrides, ZnO, and GaAs.
Download or read book Nitride Semiconductors and Devices written by Hadis Morkoç and published by Springer. This book was released on 1999-09-28 with total page 489 pages. Available in PDF, EPUB and Kindle. Book excerpt: This timely monograph addresses an important class of semiconductors and devices that constitute the underlying technology for blue lasers. It succinctly treats structural, electrical and optical properties of nitrides and the substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies, light-emitting diodes, and lasers. It also includes many tables and figures detailing the properties and performance of nitride semiconductors and devices.
Download or read book Handbook of Nitride Semiconductors and Devices GaN based Optical and Electronic Devices written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 902 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 3 deals with nitride semiconductor devices and device technology. Among the application areas that feature prominently here are LEDs, lasers, FETs and HBTs, detectors and unique issues surrounding solar blind detection.
Download or read book Device Applications of Silicon Nanocrystals and Nanostructures written by Nobuyoshi Koshida and published by Springer Science & Business Media. This book was released on 2008-12-11 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important, are systematically described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual indirect- or direct-bandgap regime, and the optical, electrical, thermal, and chemical properties of these nanocrystalline and nanostructured semiconductors are drastically changed from those of bulk silicon. In addition to efficient visible luminescence, various other useful material functions are induced in nanocrystalline silicon and periodic silicon nanostructures. Some novel devices and applications, in fields such as photonics (electroluminescence diode, microcavity, and waveguide), electronics (single-electron device, spin transistor, nonvolatile memory, and ballistic electron emitter), acoustics, and biology, have been developed by the use of these quantum-induced functions in ways different from the conventional scaling principle for ULSI.
Download or read book III nitride Devices and Nanoengineering written by Zhe Chuan Feng and published by World Scientific. This book was released on 2008 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Download or read book Introduction to Optical and Optoelectronic Properties of Nanostructures written by Vladimir V. Mitin and published by Cambridge University Press. This book was released on 2019-03-21 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: A rigorous guide providing a unified, multidisciplinary treatment of the fundamentals of optical and optoelectronic nanostructures.
Download or read book Handbook of Optoelectronic Device Modeling and Simulation written by Joachim Piprek and published by CRC Press. This book was released on 2017-10-10 with total page 835 pages. Available in PDF, EPUB and Kindle. Book excerpt: • Provides a comprehensive survey of fundamental concepts and methods for optoelectronic device modeling and simulation. • Gives a broad overview of concepts with concise explanations illustrated by real results. • Compares different levels of modeling, from simple analytical models to complex numerical models. • Discusses practical methods of model validation. • Includes an overview of numerical techniques.
Download or read book Nitride Semiconductor Devices written by Joachim Piprek and published by John Wiley & Sons. This book was released on 2007-06-27 with total page 519 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor displays to high-definition DVD players. In recent years, nitride device modeling and simulation has gained importance and advanced software tools are emerging. Similar developments occurred in the past with other semiconductors such as silicon, where computer simulation is now an integral part of device development and fabrication. This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.
Download or read book Optics of Semiconductors and Their Nanostructures written by Heinz Kalt and published by Springer Science & Business Media. This book was released on 2013-04-09 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years the field of semiconductor optics has been pushed to several extremes. The size of semiconductor structures has shrunk to dimensions of a few nanometers, the semiconductor-light interaction is studied on timescales as fast as a few femtoseconds, and transport properties on a length scale far below the wavelength of light have been revealed. These advances were driven by rapid improvements in both semiconductor and optical technologies and were further facilitated by progress in the theoretical description of optical excitations in semiconductors. This book, written by leading experts in the field, provides an up-to-date introduction to the optics of semiconductors and their nanostructures so as to help the reader understand these exciting new developments. It also discusses recently established applications, such as blue-light emitters, as well as the quest for future applications in areas such as spintronics, quantum information processing, and third-generation solar cells.
Download or read book Nitride Nanowire Light emitting Diode written by Nan Guan and published by . This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nitride nanowires exhibit outstanding opto-electronic and mechanical properties and are considered as promising materials for light-emitting diodes (LEDs), thanks to their high crystalline quality, non-polar facets, good mechanical flexibility, high aspect ratio, etc.This Ph.D. thesis addresses the growth, the device fabrication, the optical and electrical characterizations and the optical simulations of III-nitride NW devices, with a special emphasis on the LED applications.First, this thesis presents the growth of m-plane InGaN/GaN quantum wells with different In concentrations in self-assembled core-shell nanowires by metal-organic chemical vapor deposition. Then, by using these nanowires, LED devices based on two different integration strategies (namely, in-plane and vertical integration) are demonstrated.The in-plane integration is based on the horizontally dispersed single nanowires. I have proposed a basic integrated photonic platform consisting of a nanowire LED, an optimized waveguide and a nanowire photodetector. I have also developed a nanowire alignment system using dielectrophoresis.The vertical integration targets the fabrication of flexible LEDs based on vertical nanowire arrays embedded in polymer membranes. Flexible monochromatic, bi-color, white LEDs have been demonstrated. Their thermal properties have been analyzed.The nanowires grown on 2D materials by van der Waals epitaxy are easy to be lifted-off from their native substrate, which should facilitate the fabrication of flexible nanowire devices. With this motivation, in the last part of this thesis, I have investigated the selective area growth of GaN NWs on micro- and nano- scale graphene by molecular beam epitaxy.
