Download or read book Nanoscale Contact Engineering for Si Silicide Nanowire Devices written by Yung-Chen Lin and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal silicides have been used in silicon technology as contacts to achieve high device performance and desired device functions. The growth and applications of silicide materials have recently attracted increasing interest for nanoscale device applications. Nanoscale silicide materials have been demonstrated with various synthetic approaches. Solid state reaction wherein high quality silicides form through diffusion of metal atoms into silicon nano-templates and the subsequent phase transformation caught significant attention for the fabrication of nanoscale Si devices. Very interestingly, studies on the diffusion and phase transformation processes at nanoscale have indicated possible deviations from the bulk and the thin film system. Here we studied growth kinetics, electronic properties and device applications of nanoscale silicides formed through solid state reaction. We have grown single crystal PtSi nanowires and PtSi/Si/PtSi nanowire heterostructures through solid state reaction. TEM studies show that the heterostructures have atomically sharp interfaces free of defects. Electrical measurement of PtSi nanowires shows a low resistivity of ∼28.6 μΩ*cm and a high breakdown current density beyond 108 A/cm2. Furthermore, using single-crystal PtSi/Si/PtSi nanowire heterostructures with atomically clean interfaces, we have fabricated p-channel enhancement mode transistors with the best reported performance for intrinsic silicon nanowires to date. In our results, silicide can provide a clean and no Fermi level pinning interface and then silicide can form Ohmic-contact behavior by replacing the source/drain metal with PtSi. It has been proven by our experiment by contacting PtSi with intrinsic Si nanowires (no extrinsic doping) to achieve high performance p-channel device. By utilizing the same approach, single crystal MnSi nanowires and MnSi/Si/MnSi nanowire heterojunction with atomically sharp interfaces can also been grown. Electrical transport studies on MnSi nanowire shows an abrupt resistance reduction due to the spin ordering at ~29.7 K.A negative magnetoresistance (MR) ~1.8% under 5 Tesla at 1.6 K is achieved, demonstrating the ferromagnetic behavior of MnSi. Furthermore, using the MnSi/p-Si/MnSi heterostructure, we have studied the charge injection at various temperatures via the Schottky barrier, and the spin scattering was observed through magnetotransport studies of MnSi/p-Si/MnSi heterojunction. Our results represent the first report of magnetic contact fabrication through the formation of single crystal heterojunction nanowires and the first demonstration of spin injection and detection in such Si nanowire devices. The magnetic silicides approach thus opens a new pathway to create ferromagnetic/semiconductor junction with clean and sharp interface, and maysignificantly impact the future of spintronics. Beyond those applications, silicide phase control at nanoscale is investigated. Three nickel phases, Ni31Si12, Ni2Si and NiSi2 are observed in one step annealing at 550 oC. NiSi2 grows initially through the Si NW and then the area close to nickel pad transforms into the nickel-rich phase, Ni31Si12. With prolonged annealing over 5 minutes, the Ni2Si starts to show up in between Ni31Si12 and NiSi2. The growth sequence is different from the thin film system where Ni2Si usually appears as the initial phase in the beginning as the annealing temperature is higher than 400 oC. Interfacial energy differences and surface free energy are believed to play an important role here at the nanoscale, which lead to the formation of normally unfavorable silicide phases in Si NWs. In addition, Si/SiOx core/shell NW structure is used to explore the phase transformation of silicides in the structure-confined nano environment. Nickel silicides in the structure-confined core/shell Si NW shares the similar phase formation sequences as those appeared in the bared SiNWs, while the growth rate is significantly retarded. This may be attributed to the high compressive stress built-in in the core/shell NW structure that retards the diffusion of the nickel atom as well as limits the volume expansion of the metal-rich phases. As a result, the high stress at this finite scale hinders the continuous growth of Ni31Si12 into the core/shell NWs and totally eliminates the formation of Ni2Si in core/shell NWs with thick oxide shells (~ 50 nm). Through these studies, we have demonstrated first time the phase formation sequences of nickel silicides in Si and Si/SiOx NW structures, which is of great importance for reliable contact engineering for Si NW devices. Furthermore, we have provided a clear picture of the hindered nickel silicide growth in confined nanoscale environment and showed the deviated behavior of silicides growth under stress. The information rendered here will be useful for Si NW device applications as well as for the silicon device engineering at nanoscale in general. To further investigate the oxide shell effect, Mn5Si3 and Fe5Ge3 NW were grown within various oxide thickness to explore the nucleation and growth in the nanowire structure. A oxide shell exerted a compressive stress on the silicide or germanide materials will make those materials with single-crystal properties. Interestingly, single-crystal growth of contact materials can be also implemented for germanide materials. The iron-rich germanide, Fe5Ge3, was successfully grown with single-crystal properties. It shows ferromagnetic properties with a Curie temperature above the room temperature verified by magnetic force microscope (MFM). Two different epitaxial relations found at germanide/germanium interface due to the different sizes of the germanium NW templates. These two different crystal structures exhibited magnetic anisotropy in magnetic force microscope (MFM) measurement, showing differently preferred domain orientations. In-plane and out-of-plane magnetization in the Fe5Ge3 NWs are observed in our experiment. The crystal orientation or engineering stress may have influence on the magnetic domain structure. This ferromagnetic contact material may open the way for spintronics to grow the magnetic materials on the semiconducting materials and control the direction of magnetization in the future. Those silicide studies indicated silicide metal-heterojunction field effect transistor has excellent device performance. In addition, Si channel region can be shrunk to less than 10 nm and also keep semiconducting properties without high leakage current. This approach has the potential for future nanoelectronics. However, silicide phase transformation shows a deviated behavior from the studies in bulk system. It may be associated with stress effect or nucleation behavior at nanosclae, leading the different formation phase or sequence. For those interesting phenomena, it has attracted more and more attention and may gain more insight studies in the near future.

Download or read book Silicon and Silicide Nanowires written by Yu Huang and published by CRC Press. This book was released on 2016-04-19 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale materials are showing great promise in various electronic, optoelectronic, and energy applications. Silicon (Si) has especially captured great attention as the leading material for microelectronic and nanoscale device applications. Recently, various silicides have garnered special attention for their pivotal role in Si device engineering

Download or read book Nanowire Electronics written by Guozhen Shen and published by Springer. This book was released on 2018-11-23 with total page 393 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives a comprehensive overview of recent advances in developing nanowires for building various kinds of electronic devices. Specifically the applications of nanowires in detectors, sensors, circuits, energy storage and conversion, etc., are reviewed in detail by the experts in this field. Growth methods of different kinds of nanowires are also covered when discussing the electronic applications. Through discussing these cutting edge researches, the future directions of nanowire electronics are identified.

Download or read book Silicon and Silicide Nanowires written by Yu Huang and published by . This book was released on 2013 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale materials are showing great promise in various electronic, optoelectronic, and energy applications. Silicon (Si) has especially captured great attention as the leading material for microelectronic and nanoscale device applications. Recently, various silicides have garnered special attention for their pivotal role in Si device engineering and for the vast potential they possess in fields such as thermoelectricity and magnetism. The fundamental understanding of Si and silicide material processes at nanoscale plays a key role in achieving device structures and performance that meet real-world requirements and, therefore, demands investigation and exploration of nanoscale device applications. This book comprises the theoretical and experimental analysis of various properties of silicon nanocrystals, research methods and techniques to prepare them, and some of their promising applications.

Download or read book Metal Silicide Nanowires for Nanoscale Contacts and Polycrystalline Silicon Thin Films for Solar Cells by Metal induced Growth written by and published by . This book was released on 2006 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Nanomaterials Sourcebook written by Klaus D. Sattler and published by CRC Press. This book was released on 2017-07-28 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive tutorial guide to silicon nanomaterials spans from fundamental properties, growth mechanisms, and processing of nanosilicon to electronic device, energy conversion and storage, biomedical, and environmental applications. It also presents core knowledge with basic mathematical equations, tables, and graphs in order to provide the reader with the tools necessary to understand the latest technology developments. From low-dimensional structures, quantum dots, and nanowires to hybrid materials, arrays, networks, and biomedical applications, this Sourcebook is a complete resource for anyone working with this materials: Covers fundamental concepts, properties, methods, and practical applications. Focuses on one important type of silicon nanomaterial in every chapter. Discusses formation, properties, and applications for each material. Written in a tutorial style with basic equations and fundamentals included in an extended introduction. Highlights materials that show exceptional properties as well as strong prospects for future applications. Klaus D. Sattler is professor physics at the University of Hawaii, Honolulu, having earned his PhD at the Swiss Federal Institute of Technology (ETH) in Zurich. He was honored with the Walter Schottky Prize from the German Physical Society, and is the editor of the sister work also published by Taylor & Francis, Carbon Nanomaterials Sourcebook, as well as the acclaimed multi-volume Handbook of Nanophysics.

Download or read book Low Dimensional Nanoscale Electronic and Photonic Devices 4 written by L.-J. Chou and published by The Electrochemical Society. This book was released on 2010-10 with total page 103 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Low-Dimensional Nanoscale Electronic and Photonic Devices 4¿, held during the 218th meeting of The Electrochemical Society, in Las Vegas, Nevada from October 10 to 15, 2010.

Download or read book Silicide and Germanide Contacts to Silicon and Germanium Nanowires written by Nicholas S. Dellas and published by . This book was released on 2011 with total page 163 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicide silicon Heterointerfaces Reaction Kinetics and Ultra short Channel Devices written by Wei Tang and published by . This book was released on 2012 with total page 103 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nickel silicide is one of the electrical contact materials widely used on very large scale integration (VLSI) of Si devices in microelectronic industry. This is because the silicide/silicon interface can be formed in a highly controlled manner to ensure reproducibility of optimal structural and electrical properties of the metal-Si contacts. These advantages can be inherited to Si nanowire (NW) field-effect transistors (FET) device. Due to the technological importance of nickel silicides, fundamental materials science of nickel silicides formation (Ni-Si reaction), especially in nanoscale, has raised wide interest and stimulate new insights and understandings. In this dissertation, in-situ transmission electron microscopy (TEM) in combination with FET device characterization will be demonstrated as useful tools in nano-device fabrication as well as in gaining insights into the process of nickel silicide formation. The shortest transistor channel length (17 nm) fabricated on a vapor-liquid-solid (VLS) grown silicon nanowire (NW) has been demonstrated by controlled reaction with Ni leads on an in-situ transmission electron microscope (TEM) heating stage at a moderate temperature of 400 ðC. NiSi2 is the leading phase, and the silicide-silicon interface is an atomically sharp type-A interface. At such channel lengths, high maximum on-currents of 890 (uA/um) and a maximum transconductance of 430 ([mu]S/[mu]m) were obtained, which pushes forward the performance of bottom-up Si NW Schottky barrier field-effect transistors (SB-FETs). Through accurate control over the silicidation reaction, we provide a systematic study of channel length dependent carrier transport in a large number of SB-FETs with channel lengths in the range of (17 nm - 3.6 [mu]m). Our device results corroborate with our transport simulations and reveal a characteristic type of short channel effects in SB-FETs, both in on- and off-state, which is different from that in conventional MOSFETs, and that limits transport parameter extraction from SB-FETs using the conventional field-effect transconductance measurements. In addition to application of silicide in Si NW devices, the fundamental materials science of Ni-Si reaction is also of interest, and in-situ TEM has been shown to be a useful tool in obtaining dynamical phase transformation information and therefore providing insights into the new phase formation process. By using in-situ TEM techniques, a new gold catalyzed solid-liquid-solid (SLS) silicide phase growth mechanism in Si NWs is observed for the first time, which shows the liquid mediating growth can be also used in synthesis of metallic silicide nanowires. SLS is analogous to the VLS in both being liquid-mediated, but is fundamentally different in terms of nucleation and mass transport. In our SLS growth at 700 ðC, the Ni atoms are supplied from remote Ni particles by interstitial diffusion through Si NW into the pre-existing Au particle at the tip. Upon supersaturation of both Ni and Si in Au, octahedral shape of Ni disilicide phase nucleates in the middle of the Au liquid alloy, which thereafter sweeps through the Si NW and transform Si into NiSi2. Dissolution of Si by Au(Si, Ni) liquid mediating layer and growth of NiSi2 are shown to proceed in different manners. Using in-situ TEM technique, we also have the chance to present direct evidence that Si (111) twin boundaries and Si grain boundaries on Si NW surface can be efficient heterogeneous nucleation site for the silicide growth. By analyzing the nucleation site favorability, unlike other typical FCC materials like Cu or Si, we infer (111) twin defects in NiSi2 may have high interfacial energy. These results may provide valuable insights into the MOSFET source/drain (S/D) contact silicide formation process when defects are either unintentionally formed during the process or intentionally introduced to engineering the strain along the channel.

Download or read book One Dimensional Nanostructures written by Tianyou Zhai and published by John Wiley & Sons. This book was released on 2012-10-19 with total page 857 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reviews the latest research breakthroughs and applications Since the discovery of carbon nanotubes in 1991, one-dimensional nanostructures have been at the forefront of nanotechnology research, promising to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. With contributions from 68 leading international experts, this book reviews both the underlying principles as well as the latest discoveries and applications in the field, presenting the state of the technology. Readers will find expert coverage of all major classes of one-dimensional nanostructures, including carbon nanotubes, semiconductor nanowires, organic molecule nanostructures, polymer nanofibers, peptide nanostructures, and supramolecular nanostructures. Moreover, the book offers unique insights into the future of one-dimensional nanostructures, with expert forecasts of new research breakthroughs and applications. One-Dimensional Nanostructures collects and analyzes a wealth of key research findings and applications, with detailed coverage of: Synthesis Properties Energy applications Photonics and optoelectronics applications Sensing, plasmonics, electronics, and biosciences applications Practical case studies demonstrate how the latest applications work. Tables throughout the book summarize key information, and diagrams enable readers to grasp complex concepts and designs. References at the end of each chapter serve as a gateway to the literature in the field. With its clear explanations of the underlying principles of one-dimensional nanostructures, this book is ideal for students, researchers, and academics in chemistry, physics, materials science, and engineering. Moreover, One-Dimensional Nanostructures will help readers advance their own investigations in order to develop the next generation of applications.

Download or read book Handbook of Nanoscience Engineering and Technology written by William A. Goddard III and published by CRC Press. This book was released on 2018-09-03 with total page 1075 pages. Available in PDF, EPUB and Kindle. Book excerpt: In his 1959 address, "There is Plenty of Room at the Bottom," Richard P. Feynman speculated about manipulating materials atom by atom and challenged the technical community "to find ways of manipulating and controlling things on a small scale." This visionary challenge has now become a reality, with recent advances enabling atomistic-level tailoring and control of materials. Exemplifying Feynman’s vision, Handbook of Nanoscience, Engineering, and Technology, Third Edition continues to explore innovative nanoscience, engineering, and technology areas. Along with updating all chapters, this third edition extends the coverage of emerging nano areas even further. Two entirely new sections on energy and biology cover nanomaterials for energy storage devices, photovoltaics, DNA devices and assembly, digital microfluidic lab-on-a-chip, and much more. This edition also includes new chapters on nanomagnet logic, quantum transport at the nanoscale, terahertz emission from Bloch oscillator systems, molecular logic, electronic optics in graphene, and electromagnetic metamaterials. With contributions from top scientists and researchers from around the globe, this color handbook presents a unified, up-to-date account of the most promising technologies and developments in the nano field. It sets the stage for the next revolution of nanoscale manufacturing—where scalable technologies are used to manufacture large numbers of devices with complex functionalities.

Download or read book Issues in Nanoscience and Nanoscale Research 2011 Edition written by and published by ScholarlyEditions. This book was released on 2012-01-09 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues in Nanoscience and Nanoscale Research: 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Nanoscience and Nanoscale Research. The editors have built Issues in Nanoscience and Nanoscale Research: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Nanoscience and Nanoscale Research in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Nanoscience and Nanoscale Research: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Download or read book Semiconductor Manufacturing Handbook 2E PB written by Hwaiyu Geng and published by McGraw Hill Professional. This book was released on 2017-10-06 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thoroughly Revised, State-of-the-Art Semiconductor Design, Manufacturing, and Operations Information Written by 70 international experts and reviewed by a seasoned technical advisory board, this fully updated resource clearly explains the cutting-edge processes used in the design and fabrication of IC chips, MEMS, sensors, and other electronic devices. Semiconductor Manufacturing Handbook, Second Edition, covers the emerging technologies that enable the Internet of Things, the Industrial Internet of Things, data analytics, artificial intelligence, augmented reality, and and smart manufacturing. You will get complete details on semiconductor fundamentals, front- and back-end processes, nanotechnology, photovoltaics, gases and chemicals, fab yield, and operations and facilities. •Nanotechnology and microsystems manufacturing •FinFET and nanoscale silicide formation •Physical design for high-performance, low-power 3D circuits •Epitaxi, anneals, RTP, and oxidation •Microlithography, etching, and ion implantations •Physical, chemical, electrochemical, and atomic layer vapor deposition •Chemical mechanical planarization •Atomic force metrology •Packaging, bonding, and interconnects •Flexible hybrid electronics •Flat-panel,flexible display electronics, and photovoltaics •Gas distribution systems •Ultrapure water and filtration •Process chemicals handling and abatement •Chemical and slurry handling systems •Yield management, CIM, and factory automation •Manufacturing execution systems •Advanced process control •Airborne molecular contamination •ESD controls in clean-room environments •Vacuum systems and RF plasma systems •IC manufacturing parts cleaning technology •Vibration and noise design •And much more

Download or read book Amorphous and Polycrystalline Thin film Silicon Science and Technology 2006 written by Sigurd Wagner and published by . This book was released on 2007 with total page 776 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Center for Nanoscale Science and Technology 2010 Biennial Report written by and published by DIANE Publishing. This book was released on with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Nanowire Transistors written by Ahmet Bindal and published by Springer. This book was released on 2016-02-23 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI.

Download or read book Metallic Films for Electronic Optical and Magnetic Applications written by Katayun Barmak and published by Woodhead Publishing. This book was released on 2014-02-13 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metallic films play an important role in modern technologies such as integrated circuits, information storage, displays, sensors, and coatings. Metallic Films for Electronic, Optical and Magnetic Applications reviews the structure, processing and properties of metallic films. Part one explores the structure of metallic films using characterization methods such as x-ray diffraction and transmission electron microscopy. This part also encompasses the processing of metallic films, including structure formation during deposition and post-deposition reactions and phase transformations. Chapters in part two focus on the properties of metallic films, including mechanical, electrical, magnetic, optical, and thermal properties. Metallic Films for Electronic, Optical and Magnetic Applications is a technical resource for electronics components manufacturers, scientists, and engineers working in the semiconductor industry, product developers of sensors, displays, and other optoelectronic devices, and academics working in the field. Explores the structure of metallic films using characterization methods such as x-ray diffraction and transmission electron microscopy Discusses processing of metallic films, including structure formation during deposition and post-deposition reactions and phase transformations Focuses on the properties of metallic films, including mechanical, electrical, magnetic, optical, and thermal properties