Download or read book Low Frequency Noise in Advanced MOS Devices written by Martin Haartman and published by Springer Science & Business Media. This book was released on 2007-08-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.

Download or read book Low Frequency Noise in Advanced MOS Devices written by Martin von Haartman and published by Springer. This book was released on 2009-09-03 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.

Download or read book Nanoscale Devices written by Brajesh Kumar Kaushik and published by CRC Press. This book was released on 2018-11-16 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter

Download or read book Noise in Nanoscale Semiconductor Devices written by Tibor Grasser and published by Springer Nature. This book was released on 2020-04-26 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.

Download or read book Tradeoffs and Optimization in Analog CMOS Design written by David Binkley and published by John Wiley & Sons. This book was released on 2008-09-15 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analog CMOS integrated circuits are in widespread use for communications, entertainment, multimedia, biomedical, and many other applications that interface with the physical world. Although analog CMOS design is greatly complicated by the design choices of drain current, channel width, and channel length present for every MOS device in a circuit, these design choices afford significant opportunities for optimizing circuit performance. This book addresses tradeoffs and optimization of device and circuit performance for selections of the drain current, inversion coefficient, and channel length, where channel width is implicitly considered. The inversion coefficient is used as a technology independent measure of MOS inversion that permits design freely in weak, moderate, and strong inversion. This book details the significant performance tradeoffs available in analog CMOS design and guides the designer towards optimum design by describing: An interpretation of MOS modeling for the analog designer, motivated by the EKV MOS model, using tabulated hand expressions and figures that give performance and tradeoffs for the design choices of drain current, inversion coefficient, and channel length; performance includes effective gate-source bias and drain-source saturation voltages, transconductance efficiency, transconductance distortion, normalized drain-source conductance, capacitances, gain and bandwidth measures, thermal and flicker noise, mismatch, and gate and drain leakage current Measured data that validates the inclusion of important small-geometry effects like velocity saturation, vertical-field mobility reduction, drain-induced barrier lowering, and inversion-level increases in gate-referred, flicker noise voltage In-depth treatment of moderate inversion, which offers low bias compliance voltages, high transconductance efficiency, and good immunity to velocity saturation effects for circuits designed in modern, low-voltage processes Fabricated design examples that include operational transconductance amplifiers optimized for various tradeoffs in DC and AC performance, and micropower, low-noise preamplifiers optimized for minimum thermal and flicker noise A design spreadsheet, available at the book web site, that facilitates rapid, optimum design of MOS devices and circuits Tradeoffs and Optimization in Analog CMOS Design is the first book dedicated to this important topic. It will help practicing analog circuit designers and advanced students of electrical engineering build design intuition, rapidly optimize circuit performance during initial design, and minimize trial-and-error circuit simulations.

Download or read book Ultra Low Noise CMOS Image Sensors written by Assim Boukhayma and published by Springer. This book was released on 2017-11-28 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis provides a thorough noise analysis for conventional CIS readout chains, while also presenting and discussing a variety of noise reduction techniques that allow the read noise in standard processes to be optimized. Two physical implementations featuring sub-0.5-electron RMS are subsequently presented to verify the proposed noise reduction techniques and provide a full characterization of a VGA imager. Based on the verified noise calculation, the impact of the technology downscaling on the input-referred noise is also studied. Further, the thesis covers THz CMOS image sensors and presents an original design that achieves ultra-low-noise performance. Last but not least, it provides a comprehensive review of CMOS image sensors.

Download or read book Advanced MOS Devices and their Circuit Applications written by Ankur Beohar and published by CRC Press. This book was released on 2024-01-08 with total page 161 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach. The book: Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs) Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applications Examines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistors Includes research problem statements with specifications and commercially available industry data in the appendix Presents Verilog-A model-based simulations for circuit analysis The volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology.

Download or read book Dielectric Films for Advanced Microelectronics written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2007-04-04 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.

Download or read book Photon Counting Image Sensors written by Eric R. Fossum and published by MDPI. This book was released on 2018-07-06 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a printed edition of the Special Issue "Photon-Counting Image Sensors" that was published in Sensors

Download or read book Technology Computer Aided Design written by Chandan Kumar Sarkar and published by CRC Press. This book was released on 2018-09-03 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt: Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.

Download or read book Strain Engineered MOSFETs written by C.K. Maiti and published by CRC Press. This book was released on 2018-10-03 with total page 311 pages. Available in PDF, EPUB and Kindle. Book excerpt: Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.

Download or read book Single Photon Imaging written by Peter Seitz and published by Springer Science & Business Media. This book was released on 2011-08-03 with total page 363 pages. Available in PDF, EPUB and Kindle. Book excerpt: The acquisition and interpretation of images is a central capability in almost all scientific and technological domains. In particular, the acquisition of electromagnetic radiation, in the form of visible light, UV, infrared, X-ray, etc. is of enormous practical importance. The ultimate sensitivity in electronic imaging is the detection of individual photons. With this book, the first comprehensive review of all aspects of single-photon electronic imaging has been created. Topics include theoretical basics, semiconductor fabrication, single-photon detection principles, imager design and applications of different spectral domains. Today, the solid-state fabrication capabilities for several types of image sensors has advanced to a point, where uncoooled single-photon electronic imaging will soon become a consumer product. This book is giving a specialist ́s view from different domains to the forthcoming “single-photon imaging” revolution. The various aspects of single-photon imaging are treated by internationally renowned, leading scientists and technologists who have all pioneered their respective fields.

Download or read book Handbook of Terahertz Technology for Imaging Sensing and Communications written by D Saeedkia and published by Elsevier. This book was released on 2013-01-16 with total page 684 pages. Available in PDF, EPUB and Kindle. Book excerpt: The recent development of easy-to-use sources and detectors of terahertz radiation has enabled growth in applications of terahertz (Thz) imaging and sensing. This vastly adaptable technology offers great potential across a wide range of areas, and the Handbook of terahertz technology for imaging, sensing and communications explores the fundamental principles, important developments and key applications emerging in this exciting field.Part one provides an authoritative introduction to the fundamentals of terahertz technology for imaging, sensing and communications. The generation, detection and emission of waves are discussed alongside fundamental aspects of surface plasmon polaritons, terahertz near-field imaging and sensing, room temperature terahertz detectors and terahertz wireless communications. Part two goes on to discuss recent progress and such novel techniques in terahertz technology as terahertz bio-sensing, array imagers, and resonant field enhancement of terahertz waves. Fiber-coupled time-domain spectroscopy systems (THz-TDS), terahertz photomixer systems, terahertz nanotechnology, frequency metrology and semiconductor material development for terahertz applications are all reviewed. Finally, applications of terahertz technology are explored in part three, including applications in tomographic imaging and material spectroscopy, art conservation, and the aerospace, wood products, semiconductor and pharmaceutical industries.With its distinguished editor and international team of expert contributors, the Handbook of terahertz technology for imaging, sensing and communications is an authoritative guide to the field for laser engineers, manufacturers of sensing devices and imaging equipment, security companies, the military, professionals working in process monitoring, and academics interested in this field. - Examines techniques for the generation and detection of terahertz waves - Discusses material development for terahertz applications - Explores applications in tomographic imaging, art conservation and the pharmaceutical and aerospace industries

Download or read book CMOS Single Chip Fast Frequency Hopping Synthesizers for Wireless Multi Gigahertz Applications written by Taoufik Bourdi and published by Springer Science & Business Media. This book was released on 2007-03-06 with total page 215 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, the authors outline detailed design methodology for fast frequency hopping synthesizers for RF and wireless communications applications. There is great emphasis on fractional-N delta-sigma based phase locked loops from specifications, system analysis and architecture planning to circuit design and silicon implementation. The developed techniques in the book can help in designing very low noise, high speed fractional-N frequency synthesizers.

Download or read book Silicon Analog Components written by Badih El-Kareh and published by Springer. This book was released on 2019-08-07 with total page 683 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science. Enables engineers to understand analog device physics, and discusses important relations between process integration, device design, component characteristics, and reliability; Describes in step-by-step fashion the components that are used in analog designs, the particular characteristics of analog components, while comparing them to digital applications; Explains the second-order effects in analog devices, and trade-offs between these effects when designing components and developing an integrated process for their manufacturing.

Download or read book Nanoelectronics Devices Design Materials and Applications Part I written by Gopal Rawat and published by Bentham Science Publishers. This book was released on 2023-10-31 with total page 449 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronics Devices: Design, Materials, and Applications provides information about the progress of nanomaterial and nanoelectronic devices and their applications in diverse fields (including semiconductor electronics, biomedical engineering, energy production and agriculture). The book is divided into two parts. The editors have included a blend of basic and advanced information with references to current research. The book is intended as an update for researchers and industry professionals in the field of electronics and nanotechnology. It can also serve as a reference book for students taking advanced courses in electronics and technology. The editors have included MCQs for evaluating the readers’ understanding of the topics covered in the book. Topics covered in Part 1 include basic knowledge on nanoelectronics with examples of testing different device parameters. - The present, past, and future of nanoelectronics, - An introduction to Nanoelectronics and applicability of Moore's law - Transport of charge carrier, electrode, and measurement of device parameters - Fermi level adjustment in junction less transistor, - Non-polar devices and their simulation - The negative capacitance in MOSFET devices - Effect of electrode in the device operation - Second and Sixth group semiconductors, - FinFET principal and future, Electronics and optics integration for fast processing and data communication - Batteryless photo detectors - Solar cell fabrication and applications - Van der Waals assembled nanomaterials

Download or read book Low Power UWB CMOS Radar Sensors written by Hervé Paulino and published by Springer Science & Business Media. This book was released on 2008-04-30 with total page 239 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low Power UWB CMOS Radar Sensors deals with the problem of designing low cost CMOS radar sensors. The radar sensor uses UWB signals in order to obtain a reasonable target separation capability, while maintaining a maximum signal frequency below 2 GHz. This maximum frequency value is well within the reach of current CMOS technologies. The use of UWB signals means that most of the methodologies used in the design of circuits and systems that process narrow band signals, can no longer be applied. Low Power UWB CMOS Radar Sensors provides an analysis between the interaction of UWB signals, the antennas and the processing circuits. This analysis leads to some interesting conclusions on the types of antennas and types of circuits that should be used. A methodology to compare the noise performance of UWB processing circuits is also derived. This methodology is used to analyze and design the constituting circuits of the radar transceiver. In order to validate the design methodology a CMOS prototype is designed and experimentally evaluated.