Download or read book International Symposium on the Structure and Properties of Dislocations in Semiconductors 5 written by and published by . This book was released on 1986 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book International Symposium on the Structure and Properties of Dislocations in Semiconductors 4 written by and published by . This book was released on 1983 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book International Symposium on the Structure and Properties of Dislocations in Semiconductors 3 written by and published by . This book was released on 1978 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Structure and Properties of Dislocations in Semiconductors 1989 Proceedings of the 6th INT Symposium Oxford April 1989 written by S. G. Roberts and published by CRC Press. This book was released on 1989-01-01 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.
Download or read book Proceedings of the International Symposium on the Structure and Properties of Dislocations in Semiconductors 6th Held in Oxford England 5 8 April 1989 Structure and Properties of Dislocations in Semiconductors 1989 written by and published by . This book was released on 1989 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: Structure of grain boundaries and dislocations; Models of the atomic and electronic structures of grain boundaries in silicon; Interaction of impurities with dislocation cores in silicon; Dislocation mechanisms for twinning and polytypic transformations in semiconductors; Electronic effects of dislocations and associated point defects; Electrical and optical phenomena of II-VI semiconductors associated with dislocations; Electrical and optical properties of dislocations in Gallium Arsenide; Effect of Helium in dislocation pipes on photoconductivity in Germanium and Si; Influence of non-stoichiometric melts on the defect structure of n-type bulk GaAs crystals; High spatial resolution cathodoluminescence from dislocations in semiconductors studied in a TEM; Deep states associated with platinum decorated stacking faults in silicon; Dislocation mobility Impurity effects on dynamic behaviour of dislocations in semiconductors; Kink formation and migration in covalent crystals; Effect of surface charge on the dislocation mobility in semiconductors; Dislocations, plasticity and facture; Plastic deformation of Si and Ge bicrystals; The effect of oxygen and hydrogen on the brittle-ductile transition of silicon; Dislocations and device performance; The effect of geometrical and material parameters on the stress relief of mismatched heteroepitaxial systems; and The homogeneous nucleation of dislocations during integrated circuit processing. (aw).
Download or read book Structure and Properties of Dislocations in Semiconductors 1989 Proceedings of the 6th INT Symposium Oxford April 1989 written by S. G. Roberts and published by CRC Press. This book was released on 1989 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.
Download or read book Structure and Properties of Extended Defects in Semiconductors written by European Science Foundation and published by . This book was released on 1993 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book IUTAM Symposium on Mesoscopic Dynamics of Fracture Process and Materials Strength written by H. Kitagawa and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the IUT AM Symposium of "Mesoscopic Dynamics of Fracture Process and Materials Strength", held in July 2003, at the Hotel Osaka Sun Palace, Osaka, Japan. The Symposium was proposed in 2001, aiming at organizing concentrated discussions on current understanding of fracture process and inhomogeneous deformation governing the materials strength with emphasis on the mesoscopic dynamics associated with evolutional mechanical behaviour under micro/macro mutual interaction. The decision of the General Assembly of International Union of Theoretical and Applied Mechanics (IUT AM) to accept our proposal was well-timed and attracted attention. Driven by the development of new theoretical and computational techniques, various novel challenges to investigate the mesoscopic dynamics have been actively done recently, including large-scaled 3D atomistic simulations, discrete dislocation dynamics and other micro/mesoscopic computational analyses. The Symposium attracted sixty-six participants from eight countries, and forty two papers were presented. The presentations comprised a wide variety of fundamental subjects of physics, mechanical models, computational strategies as well as engineering applications. Among the subjects, discussed are (a) dislocation patterning, (b) crystal plasticity, (c) characteristic fracture of amorphous/nanocrystal, (d) nano-indentation, (e) ductile-brittle transition, (f) ab-initio calculation, (g) computational methodology for multi-scale analysis and others.
Download or read book Colloque International Du CNRS Sur Les Properties and Structure of Dislocations in Semiconductors written by Centre national de la recherche scientifique (France) and published by . This book was released on 1983 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book NATO Science Programme Yearbook Compendium 1985 1989 written by and published by . This book was released on 1989 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Fifth International Symposium of Process Physics and Modeling in Semiconductor Technology written by C. S. Murthy and published by The Electrochemical Society. This book was released on 1999 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties and Structures of Dislocations in Semiconductors written by and published by . This book was released on 1988 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2007-04-12 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Download or read book Proceedings of the Fifth International Symposium on Quantum Confinement Nanostructures written by M. Cahay and published by . This book was released on 1999 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Papers Presented at the European Research Conference on Extended Defects in Semiconductors written by and published by . This book was released on 1993 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties and Structure of Dislocations in Semiconductors written by and published by . This book was released on 1983 with total page 499 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government Reports Announcements Index written by and published by . This book was released on 1990 with total page 1190 pages. Available in PDF, EPUB and Kindle. Book excerpt:
