Download or read book Influence of Copper Content on Grain Growth in Vapor Deposited Al cu Thin Films written by U. Koester and published by . This book was released on 1986 with total page 13 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Influence of Strain Energy on Abnormal Grain Growth in Copper Thin Films written by Eden Melody Zielinski and published by . This book was released on 1995 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Grain Growth in Al 2 Cu Thin Films written by and published by . This book was released on 1991 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: The grain size and grain growth kinetics in sputter deposited Al-2% Cu films on silicon substrates were determined by TEM for various film thicknesses and anneal times, temperatures and methods. Grain sizes were found to be typically lognormally distributed. The as- deposited grain size (d{sub o}) dependence on film thickness (TH) was found to be d{sub o} = C TH{sup {1/2}}, due to competitive grain growth during film formation. Annealed grain size (d) after Rapid Thermal Annealing (RTA) for time (t) at temperature (T) is described by the general equation d - do = C TH{sup 0.7} {l brace}t exp ( -[Delta]E{sub a}/kT){r brace}18, where [Delta]E{sub a} = 0.85 ev for 0.4 [mu]m films and [Delta]E{sub a} = 1.1 ev for 0.8 [mu]m films. Grain growth is largely saturated for these anneals. Grain growth is shown to be more extensive during RTA anneals than furnace annealing and more extensive in 0.4 [mu]m films than 0.8 [mu]m films for equivalent RTA cycles. The results are discussed in terms of models, simulations and previous results of grain growth in thin metal films. 21 refs., 4 figs.

Download or read book Interfaces Superlattices and Thin Films written by John D. Dow and published by . This book was released on 1987 with total page 850 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Grain Growth and Texture Evolution in Copper Thin Films written by Petra Sonnweber-Ribic and published by . This book was released on 2010 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Classical Size Effect in Copper Thin Films written by Tik Sun and published by . This book was released on 2009 with total page 97 pages. Available in PDF, EPUB and Kindle. Book excerpt: Surface and grain boundary electron scattering contribute significantly to resistivity as the dimensions of polycrystalline metallic conductors are reduced to, and below, the electron mean free path. A quantitative measurement of the relative contributions of surface and grain boundary scattering to resistivity is very challenging, requiring not only the preparation of suitably small conductors having independent variation of the two relevant length scales, namely, the sample critical dimension and the grain size, but also independent experimental quantification of these two length scales. In most work to date the sample grain size has been either assumed equal to conductor dimension or measured for only a small number of grains. Thus, the quantification of the classical size effect still suffers from an uncertainty in the relative contributions of surface and grain boundary scattering. In this work, a quantitative analysis of both surface and grain boundary scattering in Cu thin films with independent variation of film thickness (27 nm to 158 nm) and grain size (35 nm to 425 nm) in samples prepared by sub-ambient temperature film deposition followed by annealing is reported. Film resistivities of carefully characterized samples were measured at both room temperature and at 4.2 K and were compared with several scattering models that include the effects of surface and grain boundary scattering. Grain boundary scattering is found to provide the strongest contribution to the resistivity increase. However, a weaker, but significant, role is also observed for surface scattering. Several of the published models for grain boundary and surface scattering are explored and the Matthiessen's rule combination of the Mayadas and Shatzkes'1 [Footnote 1:] model of grain boundary scattering and Fuchs2 [Footnote 2:] and Sondheimer's3 [Footnote 3:] model of surface scattering resistivity contributions is found to be most appropriate. It is found that the experimental data are best described by a grain boundary reflection coefficient of 0.43 and a surface specularity coefficient of 0.52. This analysis finds a significantly lower contribution from surface scattering than has been reported in previous works, which is in part due to the careful quantitative microstructural characterization of samples performed. The data does suggest that there is a roughness dependence to the surface scattering, but this was not conclusively demonstrated. Voids and impurities were found to have negligible impact on the measured resistivities of the carefully prepared films. Footnote 1: A.F. Mayadas and M. Shatzkes, Phys Rev. B 1, 1382 (1970). Footnote 2 :K. Fuchs, Proc. Cambridge Philos. Soc. 34, 100 (1938). Footnote 3: E.H. Sondheimer, Adv. Phys. 1. 1, (1952).

Download or read book Effect of Annealing on Copper Thin Films written by Parag Gadkari and published by . This book was released on 2005 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lastly, it is also observed that the tendency for agglomeration can be reduced by encapsulating the metal film with an oxide overlayer, which in turn improves the resistivity of the thin film due to prolonged grain growth without film breakup.

Download or read book Metals Abstracts Index written by and published by . This book was released on 1996 with total page 1622 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Role of Copper on Stress Evolution and Chemical Ordering in Iron copper platinum Thin Films written by Ross Hinson and published by . This book was released on 2011 with total page 97 pages. Available in PDF, EPUB and Kindle. Book excerpt: The chemical ordering of FePt requires an annealing temperature>500 °C. At these temperatures, grain growth attributed to thermal annealing lowers the areal density in computer hard drives. Multiple paths have been proposed to lower the ordering temperature in order to decrease the grain growth. Ternary additions show promise as a way to lower the ordering temperature and decrease the grain growth. Though multiple studies have been conducted on the incorporation of Cu into FePt, these studies have produced contradictory results on the ordering temperature. Currently, there is no literature on the in situ growth stresses during deposition of FePtCu as a function of ordering temperature. InsituFe_44.5 Pt_51 Cu_4.5 and Fe_50 Pt_50 (for comparison) thin films were produced in order to determine how stress and ordering are affected by the incorporation of Cu. The incorporation of Cu at the amounts studied did not change the stress behavior of FePt when compared to Fe_50 Pt_50 . The addition of Cu raised the ordering temperature and had little to no effect on the grain size as compared to the Fe_50 Pt_50 . This retardation of ordering has been explained by the placement of Cu at lattice sites which minimize the bond distance to Pt and maximize the bond distance to Fe.

Download or read book Metals Abstracts written by and published by . This book was released on 1998 with total page 1076 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion induced Grain Growth in Multilayer and Coevaporated Metal Alloy Thin Films written by and published by . This book was released on 1990 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: Irradiation experiments were conducted on multilayer (ML) and coevaporated (CO) thin films in order to examine the role that the heat of mixing ([Delta]H{sub mix}) has in ion-induced grain growth. Room temperature irradiations using 1.7 MeV Xe were performed in the High Voltage Electron Microscope at Argonne National Laboratory. The alloys studied (Pt-Ti, Pt-V, Pt-Ni, Au-Co and Ni-Al) spanned a large range of [Delta]H{sub mix} values. Comparison of grain growth rates between ML and CO films of a given alloy confirmed a heat of mixing effect. Differences in grain growth rates between ML and CO films scaled according to the sign and magnitude of [Delta]H{sub mix} of the system (with exception of the Pt-V system). Substantial variations in growth rates among CO alloy films experiencing similar irradiation damage demonstrated that a purely collisional approach is inadequate for describing ion-induced grain growth and consideration must also be given to material-specific properties. Results from CO alloy films were consistent with a thermal spike model of ion-induced grain growth. The grain boundary mobility was observed to be proportional to the thermal spike-related parameter, (F{sub D}2)/([Delta]H{sub coh}3), where F{sub D} is the deposited damage energy and [Delta]H{sub coh} is the cohesive energy.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 956 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1973 with total page 1256 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Advanced Manufacturing Processes V written by Volodymyr Tonkonogyi and published by Springer Nature. This book was released on 2023-08-30 with total page 591 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a timely snapshot of innovative research and developments at the interface between design, manufacturing, materials, mechanical and process engineering, and quality assurance. It covers various manufacturing processes, such as grinding, milling, broaching, and gear machining, including additive manufacturing, vibrational-centrifugal strengthening, laser-ultrasonic surface hardening, and antifriction coatings. It focuses on computer and numerical simulation, mathematical and integrated process modeling, parametric synthesis, virtual prototyping, automatic control, design of manufacturing, mechanical and mechatronics systems. It describes innovative cutting and abrasive processes and combined technologies. It also covers the formation, strengthening, and thermomechanical rolling. It also investigates the temperature field behavior, thermal stability, wear resistance, and other processes of various materials. Gathering the best papers presented at the 5th Grabchenko’s International Conference on Advanced Manufacturing Processes (InterPartner-2023), held on September 5–8, 2023, in Odessa, Ukraine, this book provides a comprehensive and up-to-date examination of design, manufacturing, mechanical, materials, and process engineering, as well as quality assurance trends and technologies. Yet, it also aims at fostering international and interdisciplinary communication and collaborations, offering a bridge between the academic and industrial sector.

Download or read book Proceedings written by and published by . This book was released on with total page 978 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Effects of Composition and Layering on Secondary Grain Growth in Aluminium Alloy Thin Films written by Cesar Dante Maiorino and published by . This book was released on 1986 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ionized Physical Vapor Deposition written by and published by Academic Press. This book was released on 1999-10-14 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides the first comprehensive look at a pivotal new technology in integrated circuit fabrication. For some time researchers have sought alternate processes for interconnecting the millions of transistors on each chip because conventional physical vapor deposition can no longer meet the specifications of today's complex integrated circuits. Out of this research, ionized physical vapor deposition has emerged as a premier technology for the deposition of thin metal films that form the dense interconnect wiring on state-of-the-art microprocessors and memory chips.For the first time, the most recent developments in thin film deposition using ionized physical vapor deposition (I-PVD) are presented in a single coherent source. Readers will find detailed descriptions of relevant plasma source technology, specific deposition systems, and process recipes. The tools and processes covered include DC hollow cathode magnetrons, RF inductively coupled plasmas, and microwave plasmas that are used for depositing technologically important materials such as copper, tantalum, titanium, TiN, and aluminum. In addition, this volume describes the important physical processes that occur in I-PVD in a simple and concise way. The physical descriptions are followed by experimentally-verified numerical models that provide in-depth insight into the design and operation I-PVD tools.Practicing process engineers, research and development scientists, and students will find that this book's integration of tool design, process development, and fundamental physical models make it an indispensable reference.Key Features:The first comprehensive volume on ionized physical vapor depositionCombines tool design, process development, and fundamental physical understanding to form a complete picture of I-PVDEmphasizes practical applications in the area of IC fabrication and interconnect technologyServes as a guide to select the most appropriate technology for any deposition application*This single source saves time and effort by including comprehensive information at one's finger tips*The integration of tool design, process development, and fundamental physics allows the reader to quickly understand all of the issues important to I-PVD*The numerous practical applications assist the working engineer to select and refine thin film processes