Download or read book Hyperthermal Molecular Beam Dry Etching of III V Compound Semiconductors written by Isako Hoshino and published by . This book was released on 1997 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dry Etching for Microelectronics written by R.A. Powell and published by Elsevier. This book was released on 2012-12-02 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book is the inclusion of an extensive literature review of dry processing, compiled by search of computerized data bases. A subject index allows ready access to the key points raised in each of the chapters.
Download or read book Reactive Ion Etching of III V Compound Semiconductors written by Yuh-Jyh Feng and published by . This book was released on 1989 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Etching of III V Semiconductors written by Peter H. L. Notten and published by Elsevier Science & Technology. This book was released on 1991 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book RLE Progress Report written by Massachusetts Institute of Technology. Research Laboratory of Electronics and published by . This book was released on 1997 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Reactive Ion Etching of III V Compound Semiconductor Materials written by Ebrahim Andideh and published by . This book was released on 1990 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reactive ion etching (RIE) of III-V compound semiconductor materials such as InP, InGaAs, InAlAs, and InGaAsP in methane (CH$sb4$) gas mixtures has been investigated. Etch rates of 800, 400 and 600 A are obtained for InP, InGaAs, and InGaAsP, respectively. Optimum processes have been developed for reliable fabrication of uniform short period gratings with smooth etched surfaces and excellent stoichiometry in these compounds. Highly anisotropic structures with dimensions down to 300 A at a pitch of 600 A are demonstrated in InP. A selective RIE process for InGaAs on InAlAs in a CH$sb4$:H$sb2$ plasma has been developed and utilized to fabricate 0.26 $mu$m T-gate modulation doped field-effect transistors (MODFETs). The microwave measurements of reactive-ion-etched and wet-etched devices show identical performance. The RIE of GaAs and AlGaAs have been characterized in SiCl$sb4$ plasma chemistry. The optical, electrical and chemical properties of the etched materials have been investigated. The effects of different RIE parameters such as gas chemistry, RF power, and reactor pressure have been studied. The RIE of laser facets in the GaAs/AlGaAs/InGaAs material system and the growth on RIE-patterned GaAs substrates are reported. Selective RIE of GaAs on AlGaAs in SiCl$sb4$/SiF$sb4$ plasma is studied. A selectivity ratio of 350:1 has been obtained at low power. A small decrease in the saturation current of gateless MODFET structures has been observed after etching the GaAs cap layer and has been ascribed to low energy ion bombardment of the surface. This process is applied to the fabrication of 0.2 $mu$m T-gate pseudomorphic MODFETs. The dc and microwave performances of RIE and wet-etched devices are identical. For these short-gatelength devices, a threshold voltage standard deviation of only 30 mV is obtained for the reactive-ion-etched devices as compared to 230 mV for the wet-etched devices. This uniform distribution is essential to the realization of integrated circuits. Surface analysis methods, such as scanning electron microscopy (SEM), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and Fourier transform infra-red spectroscopy (FTIR), have been utilized extensively to determine the chemistry of etched surfaces. Raman spectroscopy, Hall carrier mobility measurement and photoluminescence spectroscopy indicate insignificant electrical damage to the materials under optimal RIE conditions. Results of the surface analysis have been used to delineate optimum processes for the fabrication of the above devices.
Download or read book Atomic Layer Processing written by Thorsten Lill and published by John Wiley & Sons. This book was released on 2021-06-28 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn about fundamental and advanced topics in etching with this practical guide Atomic Layer Processing: Semiconductor Dry Etching Technology delivers a hands-on, one-stop resource for understanding etching technologies and their applications. The distinguished scientist, executive, and author offers readers in-depth information on the various etching technologies used in the semiconductor industry, including thermal, isotropic atomic layer, radical, ion-assisted, and reactive ion etching. The book begins with a brief history of etching technology and the role it has played in the information technology revolution, along with a collection of commonly used terminology in the industry. It then moves on to discuss a variety of different etching techniques, before concluding with discussions of the fundamentals of etching reactor design and newly emerging topics in the field such as the role played by artificial intelligence in the technology. Atomic Layer Processing includes a wide variety of other topics as well, all of which contribute to the author's goal of providing the reader with an atomic-level understanding of dry etching technology sufficient to develop specific solutions for existing and emerging semiconductor technologies. Readers will benefit from: A complete discussion of the fundamentals of how to remove atoms from various surfaces An examination of emerging etching technologies, including laser and electron beam assisted etching A treatment of process control in etching technology and the role played by artificial intelligence Analyses of a wide variety of etching methods, including thermal or vapor etching, isotropic atomic layer etching, radical etching, directional atomic layer etching, and more Perfect for materials scientists, semiconductor physicists, and surface chemists, Atomic Layer Processing will also earn a place in the libraries of engineering scientists in industry and academia, as well as anyone involved with the manufacture of semiconductor technology. The author's close involvement with corporate research & development and academic research allows the book to offer a uniquely multifaceted approach to the subject.
Download or read book The Dry Etching of III V Semiconductors written by Alison Charlotte Camacho and published by . This book was released on 1994 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Damage Etching of III V Semiconductors for the Fabrication of Nanoelectronic Devices written by Erik W. Berg and published by . This book was released on 2000 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dry Etching for VLSI written by A.J. van Roosmalen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 247 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book has been written as part of a series of scientific books being published by Plenum Press. The scope of the series is to review a chosen topic in each volume. To supplement this information, the abstracts to the most important references cited in the text are reprinted, thus allowing the reader to find in-depth material without having to refer to many additional publications. This volume is dedicated to the field of dry (plasma) etching, as applied in silicon semiconductor processing. Although a number of books have appeared dealing with this area of physics and chemistry, these all deal with parts of the field. This book is unique in that it gives a compact, yet complete, in-depth overview of fundamentals, systems, processes, tools, and applications of etching with gas plasmas for VLSI. Examples are given throughout the fundamental sections, in order to give the reader a better insight in the meaning and magnitude of the many parameters relevant to dry etching. Electrical engineering concepts are emphasized to explain the pros and cons of reactor concepts and excitation frequency ranges. In the description of practical applications, extensive use is made of cross-referencing between processes and materials, as well as theory and practice. It is thus intended to provide a total model for understanding dry etching. The book has been written such that no previous knowledge of the subject is required. It is intended as a review of all aspects of dry etching for silicon semiconductor processing.
Download or read book Dry Etching for Microelectronics written by Ronald A. Powell and published by . This book was released on 1984 with total page 299 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Konstanzer Seminar on Monetary Theory and Monetary Policy 1 written by and published by . This book was released on 1972 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Botticelli s Portrait of Giuliano De Medici written by Mary Logan Berenson and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Photoelectrochemical Etching of III V Compound Semiconductors written by and published by . This book was released on 2001 with total page 54 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Nanocrystals and Metal Nanoparticles written by Tupei Chen and published by CRC Press. This book was released on 2016-10-14 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor nanocrystals and metal nanoparticles are the building blocks of the next generation of electronic, optoelectronic, and photonic devices. Covering this rapidly developing and interdisciplinary field, the book examines in detail the physical properties and device applications of semiconductor nanocrystals and metal nanoparticles. It begins with a review of the synthesis and characterization of various semiconductor nanocrystals and metal nanoparticles and goes on to discuss in detail their optical, light emission, and electrical properties. It then illustrates some exciting applications of nanoelectronic devices (memristors and single-electron devices) and optoelectronic devices (UV detectors, quantum dot lasers, and solar cells), as well as other applications (gas sensors and metallic nanopastes for power electronics packaging). Focuses on a new class of materials that exhibit fascinating physical properties and have many exciting device applications. Presents an overview of synthesis strategies and characterization techniques for various semiconductor nanocrystal and metal nanoparticles. Examines in detail the optical/optoelectronic properties, light emission properties, and electrical properties of semiconductor nanocrystals and metal nanoparticles. Reviews applications in nanoelectronic devices, optoelectronic devices, and photonic devices.
Download or read book Study of the Initial Stages of Molecular Beam Epitaxial Growth of III V Compound Semiconductors on Silicon written by Hitoshi Kawanami and published by . This book was released on 1991 with total page 87 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Inductively Coupled Plasma Etching of III V Semiconductors in BCl 3 Based Chemistries written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A parametric study of etch rates and surface morphologies of In-containing compound semiconductors (InP, InGaAs, InGaAsP, InAs and AlInAs) obtained by BClj-based Inductively Coupled Plasmas is reported. Etch rates in the range 1,500-3,000 & min. are obtained for all the materials at moderate source powers (500 W), with the rates being a strong function of discharge composition, rf chuck power and pressure. Typical root-mean-square surface roughness of-5 nm were obtained for InP, which is worse than the values obtained for Ga-based materials under the same conditions ( -1 run). The near surface of etched samples is typically slightly deficient in the group V element, but the depth of this deficiency is small (a few tens of angstroms).
