Download or read book H Mediated Film Growth and Dopant Incorporation Kinetics During Silicon Germanium 001 boron Gas Source Molecular Beam Epitaxy written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon 011 and Silicon Germanium 011 Gas Source Molecular Beam Epitaxy Surface Reconstructions Growth Kinetics and Germanium Segregation written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2668 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 1460 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Download or read book Rapid Thermal Vapor Phase Epitaxy written by John D. Leighton and published by . This book was released on 1994 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Morphological Evolution During Molecular Beam Epitaxy of Germanium germanium 001 and Silicon germanium 111 written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth Kinetics of III V Semiconductor Thin Films by Molecular Beam Epitaxy with Gas Sources written by Bingwen Liang and published by . This book was released on 1993 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1224 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1995 with total page 1576 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Incorporation of Elemental Boron During Silicon and Silcon Germanium Molecular Beam Epitaxy written by Carl Patrick Parry and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth of Silicon 1 x Germanium x from Disilane and Digermane by Gas source Molecular Beam Epitaxy written by Thomas Richard Bramblett and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The growth rate R of Si(001), Ge(001), and $\rm Si\sb{1-x}Ge\sb{x}(001)$ films deposited on Si(001)2 $\times$ 1 substrates from $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6$ by gas-source molecular-beam epitaxy (GS-MBE) were determined as a function of temperature T$\sb{\rm s}$(300-950$\sp\circ$C) and impingement flux J (0.3-$7.7\times10\sp{16}$ cm$\sp{-2}$ s$\sp{-1}$). R(T$\sb{\rm s}$,J) curves for Si and Ge films were well described using a model, with no fitting parameters, based upon dissociative chemisorption followed by a series of surface decomposition reactions with the rate-limiting step being first-order hydrogen desorption from the surface monohydride. The hydrogen desorption activation energy for Si and Ge surfaces were found to be 2.04 eV and 1.56 eV, respectively. The zero-coverage reactive sticking probability in the impingement-flux-limited growth regime was found to be 0.036 and 0.052 for $\rm Si\sb2H\sb6$ and $\rm Ge\sb2H\sb6,$ respectively. The growth rate of SiGe alloys R$\sb{\rm SiGe}$ as a function of the bulk Ge content x was found to be a complex. In the surface-reaction-limited regime, R$\sb{\rm SiGe}$ increased with Ge surface coverage $\theta\sb{\rm Ge}$ due to the lower activation energy of H$\sb2$ desorption from Ge than from Si. However, in the impingement-flux-limited regime R$\sb{\rm SiGe}$ decreases with $\theta\sb{\rm Ge}$ due to the lower reactive sticking probability of $\rm Si\sb2H\sb6$ on Ge surface sites with respect to on Si sites. The Ge fraction, x1$\sb{\rm Ge}$, of SiGe alloys was determined as a function of growth temperature T$\sb{\rm s}$ and incident flux ratios $\rm J\sb{Ge2H6}/J\sb{Si2H6}.$ The results were explained by a kinetic model accounting for four simultaneous reaction pathways: reaction of $\rm Si\sb2H\sb6$ with Si surface sites, $\rm Si\sb2H\sb6$ with Ge sites, $\rm Ge\sb2H\sb6$ with Si sites, and $\rm Ge\sb2H\sb6$ with Ge sites. The cross-term reactive sticking probabilities, $\rm S\sbsp{Ge2H6}{Si}$ and $\rm S\sbsp{Si2H6}{Ge}$, were estimated to be 0.33 and $5.2\times10\sp{-3}$ respectively.
Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1995 with total page 1150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Growth Kinetics of Silicon Films written by Victor Fuenzalida and published by . This book was released on 1985 with total page 125 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Study of Thin Film Growth Kinetics of Homoepitaxy by Molecular Beam Epitaxy and Pulsed Laser Deposition written by Byungha Shin and published by . This book was released on 2007 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: First, we have conducted a systematic investigation of the phase shift of the RHEED intensity oscillations during Ge(001) homoepitaxy MBE for a wide range of diffraction conditions. We conclude that the phase shift is caused by the overlap of the specular spot and the Kikuchi features, in contrast to models involving dynamical scattering theory for the phase shift.
Download or read book Growth Processes and Surface Phase Equilibria in Molecular Beam Epitaxy written by Nikolai N. Ledentsov and published by Springer Science & Business Media. This book was released on 1999-07-02 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book considers the main growth-related phenomena occurring during epitaxial growth, such as thermal etching, doping, segregation of the main elements and impurities, coexistence of several phases at the crystal surface and segregation-enhanced diffusion. It is complete with tables, graphs and figures, which allow fast determination of suitable growth parameters for practical applications.
Download or read book Thin Film Deposition Employing Supersonic Molecular Beams written by Todd William Schroeder and published by . This book was released on 2004 with total page 660 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Kinetic Studies of Growth of Silicon and Silicon Germanium Thin Films Gas surface Reactivity Germanium Surface Segregation and the Effect of Coincident Atomic Hydrogen written by Yongjun Zheng and published by . This book was released on 2000 with total page 275 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on the kinetic studies presented in this thesis, a novel process was proposed to achieve selective epitaxial growth of Si and Si1-x Gex. Preliminary results show that up to 300 nm epitaxial silicon has been grown while with no sign of polycrystalline silicon growth.
