Download or read book Graphene Ge III V Nanowires and Emerging Materials for Post CMOS Applications 4 written by and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Graphene Ge III V Nanowires and Emerging Materials for Post CMOS Applications 4 written by Electrochemical Society and published by ECS Transactions. This book was released on 2012-04 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions covers emerging electronic materials and concepts, including but not limited to, beyond CMOS integration schemes/technology development and on the impact of nontraditional materials such as optical, laser, RF, and other non-conventional devices in nanoelectronics. Topics include grapheme material properties, preparation, synthesis, and growth; Ge and SiGe devices for PMOS mobility enhancement for next generation CMOS and other devices beyond strain engineering, III-V heterostructures on Si substrates.
Download or read book Dielectrics in Nanosystems and Graphene Ge III V Nanowires and Emerging Materials for Post CMOS Applications 3 written by Zia Karim and published by The Electrochemical Society. This book was released on 2011-04-25 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.
Download or read book Dielectrics in Nanosystems and Graphene Ge III V Nanowires and Emerging Materials for Post CMOS Applications 3 written by and published by . This book was released on 2011 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Graphene Ge III V and Emerging Materials for Post CMOS Applications 2 written by P. Srinivasan and published by The Electrochemical Society. This book was released on 2010-04 with total page 259 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions addresses the fundamental material science, characterization, modeling and applications of Graphene, Ge-III-V and Emerging materials designed for alternatives technologies to replace CMOS.
Download or read book Graphene Ge III V and Emerging Materials for Post CMOS Applications 5 written by Electrochemical Society (United States). Dielectric Science and Technology Division and published by . This book was released on 2013 with total page 371 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Graphene and Emerging Materials for Post CMOS Applications written by Yaw Obeng and published by The Electrochemical Society. This book was released on 2009-05 with total page 421 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objectives of this symposium was to address all current and future issues related to ¿Emerging Materials For Post-CMOS Applications.¿ The symposium focused on fundamental material science, characterization and applications of emerging materials designed for alternatives technologies to replace CMOS. Special emphasis was placed on ¿Beyond CMOS¿ integration schemes, technology development and on the impact of non-traditional materials into nanoelectronics.
Download or read book High Mobility and Quantum Well Transistors written by Geert Hellings and published by Springer Science & Business Media. This book was released on 2013-03-25 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET – is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.
Download or read book Dielectrics for Nanosystems 4 Materials Science Processing Reliability and Manufacturing written by Electrochemical society. Meeting and published by The Electrochemical Society. This book was released on 2010 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Nanomaterials in Complex Environmental and Biological Media written by and published by Elsevier. This book was released on 2015-06-01 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: Characterization of Nanomaterials in Complex Environmental and Biological Media covers the novel properties of nanomaterials and their applications to consumer products and industrial processes. The book fills the growing gap in this challenging area, bringing together disparate strands in chemistry, physics, biology, and other relevant disciplines. It provides an overview on nanotechnology, nanomaterials, nano(eco)toxicology, and nanomaterial characterization, focusing on the characterization of a range of nanomaterial physicochemical properties of relevance to environmental and toxicological studies and their available analytical techniques. Readers will find a multidisciplinary approach that provides highly skilled scientists, engineers, and technicians with the tools they need to understand and interpret complicated sets of data obtained through sophisticated analytical techniques. Addresses the requirements, challenges, and solutions for nanomaterial characterization in environmentally complex media Focuses on technique limitations, appropriate data collection, data interpretation, and analysis Aids in understanding and comparing nanomaterial characterization data reported in the literature using different analytical tools Includes case studies of characterization relevant complex media to enhance understanding
Download or read book Graphene and III V Channel Metal oxide semiconductor Field effect Devices for Post Si CMOS Applications written by Michael Edward Ramón and published by . This book was released on 2013 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt: To meet the demands for continuous transistor scaling and performance improvements required by the ITRS, there has been a tremendous amount of effort related to alternative high mobility channel materials as potential Si replacements for MOSFET fabrication. Two particularly attractive material systems include III-V substrates and graphene. Thus far, the high trap density which characterizes high-k dielectrics and the III-V/high-k dielectric interface remains an obstacle to III-V substrate integration. In a first aspect of this work, charge traps within the gate stack of III-V MOSFETs, as well as at the III-V/dielectric interface, were examined to better understand their impact on III-V device performance. In particular, a pulsed I-V measurement technique was used to assess the impact of fast and slow transient charging effects on various III-V transistors with ALD-deposited Al2O3 gate dielectric. The charge pumping technique was also utilized to determine the density of interface traps, including their energy distribution and position profile, providing further understanding into the nature of traps in the III-V/high-k system. Graphene has also attracted considerable interest owing to its high intrinsic mobility, large current densities, thermodynamic and mechanical stability. Yet, a primary challenge to the integration of graphene substrates is the lack of high quality, large-area graphene. Thus, in another aspect of this work, large-area graphene was synthesized by CVD of acetylene on Co thin films, and the influence of Co film thickness on graphene synthesis was studied. Resulting graphene films were characterized using Raman spectroscopy and back-gated GFETs were fabricated. Taking advantage of graphene’s intrinsic ambipolar electron-hole symmetry, GFET frequency doublers were fabricated on low-capacitance, single-crystal quartz substrates. GFETs frequency doublers were found to operate beyond their transit frequency (fT), and in the limit of vanishing device non-idealities, their maximum conversion gain was determined to approach a near lossless value. To further understand and improve GFET RF performance, the impact of parasitic resistances was experimentally examined. RF measurements as a function of temperature and modulated access resistance highlight the strong influence of RC on scaled devices, while the impact of RA becomes more evident for devices with large access regions.
Download or read book Advanced Nanoelectronics written by Muhammad Mustafa Hussain and published by John Wiley & Sons. This book was released on 2019-01-04 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Brings novel insights to a vibrant research area with high application potential?covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities. Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN. -Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices -Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics -Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology -Brings together the latest developments in the field for easy reference -Enables academic and R&D researchers in semiconductors to "think outside the box" and explore beyond silica An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.
Download or read book Frontiers of Graphene and Carbon Nanotubes written by Kazuhiko Matsumoto and published by Springer. This book was released on 2015-03-05 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on carbon nanotubes and graphene as representatives of nano-carbon materials, and describes the growth of new technology and applications of new devices. As new devices and as new materials, nano-carbon materials are expected to be world pioneers that could not have been realized with conventional semiconductor materials, and as those that extend the limits of conventional semiconductor performance. This book introduces the latest achievements of nano-carbon devices, processes, and technology growth. It is anticipated that these studies will also be pioneers in the development of future research of nano-carbon devices and materials. This book consists of 18 chapters. Chapters 1 to 8 describe new device applications and new growth methods of graphene, and Chapters 9 to 18, those of carbon nanotubes. It is expected that by increasing the advantages and overcoming the weak points of nanocarbon materials, a new world that cannot be achieved with conventional materials will be greatly expanded. We strongly hope this book contributes to its development.
Download or read book Handbook of Nanomaterials for Industrial Applications written by Chaudhery Mustansar Hussain and published by Elsevier. This book was released on 2018-07-19 with total page 1143 pages. Available in PDF, EPUB and Kindle. Book excerpt: Handbook of Nanomaterials for Industrial Applications explores the use of novel nanomaterials in the industrial arena. The book covers nanomaterials and the techniques that can play vital roles in many industrial procedures, such as increasing sensitivity, magnifying precision and improving production limits. In addition, the book stresses that these approaches tend to provide green, sustainable solutions for industrial developments. Finally, the legal, economical and toxicity aspects of nanomaterials are covered in detail, making this is a comprehensive, important resource for anyone wanting to learn more about how nanomaterials are changing the way we create products in modern industry. Demonstrates how cutting-edge developments in nanomaterials translate into real-world innovations in a range of industry sectors Explores how using nanomaterials can help engineers to create innovative consumer products Discusses the legal, economical and toxicity issues arising from the industrial applications of nanomaterials
Download or read book 2D Monoelemental Materials Xenes and Related Technologies written by Zongyu Huang and published by CRC Press. This book was released on 2022-04-19 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: Monoelemental 2D materials called Xenes have a graphene-like structure, intra-layer covalent bond, and weak van der Waals forces between layers. Materials composed of different groups of elements have different structures and rich properties, making Xenes materials a potential candidate for the next generation of 2D materials. 2D Monoelemental Materials (Xenes) and Related Technologies: Beyond Graphene describes the structure, properties, and applications of Xenes by classification and section. The first section covers the structure and classification of single-element 2D materials, according to the different main groups of monoelemental materials of different components and includes the properties and applications with detailed description. The second section discusses the structure, properties, and applications of advanced 2D Xenes materials, which are composed of heterogeneous structures, produced by defects, and regulated by the field. Features include: Systematically detailed single element materials according to the main groups of the constituent elements Classification of the most effective and widely studied 2D Xenes materials Expounding upon changes in properties and improvements in applications by different regulation mechanisms Discussion of the significance of 2D single-element materials where structural characteristics are closely combined with different preparation methods and the relevant theoretical properties complement each other with practical applications Aimed at researchers and advanced students in materials science and engineering, this book offers a broad view of current knowledge in the emerging and promising field of 2D monoelemental materials.
Download or read book Fundamentals of III V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Download or read book High k Gate Dielectrics written by Michel Houssa and published by CRC Press. This book was released on 2003-12-01 with total page 614 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ
