Download or read book Germanium Mid infrared Photonic Integrated Circuits written by Ahmed Osman and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Mid infrared Germanium Photonics written by Zhenzhou Cheng and published by . This book was released on 2020 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Spotlight provides a comprehensive introduction to the research history and leading-edge studies of mid-infrared germanium photonics. Topics include waveguides, grating couplers, microresonators, photonic crystal waveguides and cavities, photonic integrated circuits, and applications in information science, nonlinear optics, and biochemical sensing. The text is intended as a useful reference for beginners and experts in the integrated optics community.

Download or read book SiGe Photonic Integrated Circuits for Mid infrared Sensing Applications written by Qiankun Liu and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mid-infrared (mid-IR) spectroscopy is a nearly universal way to identify chemical and biological substances, as most of the molecules have their vibrational and rotational resonances in the mid-IR wavelength range. Commercially available mid-IR systems are based on bulky and expensive equipment, while lots of efforts are now devoted to the reduction of their size down to chip-scale dimensions. The use of silicon photonics for the demonstration of mid-IR photonic circuits will benefit from reliable and high-volume fabrication to offer high performance, low cost, compact, lightweight and power consumption photonic circuits, which is particularly interesting for mid-IR spectroscopic sensing systems that need to be portable and low cost. Among the different materials available in silicon photonics, Germanium (Ge) and Silicon-Germanium (SiGe) alloys with a high Ge concentration are particularly interesting because of the wide transparency window of Ge up to 15 μm. In this context, the objective of this thesis is to investigate a new Ge-rich graded SiGe platform for mid-IR photonic circuits. Such new plateform was expected to benefit from a wide transparency wavelength range and a high versatility in terms of optical engineering (effective index, dispersion, ...). During this thesis, different waveguides platforms based on different graded profiles have been investigated. First it has been shown that waveguides with low optical losses of less than 3 dB/cm can be obtained in a wide wavelength range, from 5.5 to 8.5 μm. A proof of concept of sensing based on the absorption of the evanescent component of the optical mode has then been demonstrated. Finally, elementary building blocs have been investigated. The first Bragg mirror-based Fabry Perot cavities and racetrack resonators have been demonstrated around 8 μm wavelength. A broadband dual-polarization MIR integrated spatial heterodyne Fourier-Transform spectrometer has also been obtained. All these results rely on material and device design, clean-room fabrication and experimental characterization. This work was done in the Framework of EU project INsPIRE in collaboration with Pr. Giovanni Isella from Politecnico Di Milano.

Download or read book Mid infrared Optoelectronics written by Eric Tournié and published by Woodhead Publishing. This book was released on 2019-10-19 with total page 750 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mid-infrared Optoelectronics: Materials, Devices, and Applications addresses the new materials, devices and applications that have emerged over the last decade, along with exciting areas of research. Sections cover fundamentals, light sources, photodetectors, new approaches, and the application of mid-IR devices, with sections discussing LEDs, laser diodes, and quantum cascade lasers, mid-infrared optoelectronics, emerging research areas, dilute bismide and nitride alloys, Group-IV materials, gallium nitride heterostructures, and new nonlinear materials. Finally, the most relevant applications of mid-infrared devices are reviewed in industry, gas sensing, spectroscopy, and imaging. This book presents a key reference for materials scientists, engineers and professionals working in R&D in the area of semiconductors and optoelectronics. Provides a comprehensive overview of mid-infrared photodetectors and light sources and the latest materials and devices Reviews emerging areas of research in the field of mid-infrared optoelectronics, including new materials, such as wide bandgap materials, chalcogenides and new approaches, like heterogeneous integration Includes information on the most relevant applications in industry, like gas sensing, spectroscopy and imaging

Download or read book Germanium on Silicon for Mid infrared Photonics written by Ugnė Griškevičiūtė and published by . This book was released on 2021 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photonics and Electronics with Germanium written by Kazumi Wada and published by John Wiley & Sons. This book was released on 2015-08-10 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt: Representing a further step towards enabling the convergence of computing and communication, this handbook and reference treats germanium electronics and optics on an equal footing. Renowned experts paint the big picture, combining both introductory material and the latest results. The first part of the book introduces readers to the fundamental properties of germanium, such as band offsets, impurities, defects and surface structures, which determine the performance of germanium-based devices in conjunction with conventional silicon technology. The second part covers methods of preparing and processing germanium structures, including chemical and physical vapor deposition, condensation approaches and chemical etching. The third and largest part gives a broad overview of the applications of integrated germanium technology: waveguides, photodetectors, modulators, ring resonators, transistors and, prominently, light-emitting devices. An invaluable one-stop resource for both researchers and developers.

Download or read book Toward Mid infrared Photonic Integration written by Dingkai Guo and published by . This book was released on 2013 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The mid-infrared (Mid-IR) wavelength range is important for applications including medical and security imaging, environmental trace gas sensing and free space communications. However, photonic integrated circuits (PICs) in the mid-IR range are under-developed which significantly slows the possible reduction of mid-IR system size, weight, and coupling losses and limits the development of highly functional mid-IR photonic modules with lower cost. In this dissertation, a solution to mid-IR photonic integration was demonstrated using a compact, widely tunable mid-IR transmitter and a mid-IR amplifying photo-detector, both which can be integrated with the mid-IR source.

Download or read book On Chip Photonics written by Alina Karabchevsky and published by Elsevier. This book was released on 2024-08-29 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: On-Chip Photonics: Principles, Technology and Applications reviews advances in integrated photonic devices and their demonstrated applications, including ultrafast high-power lasers on a chip, mid-infrared and overtone spectroscopies, all-optical processing on a chip, logic gates on a chip, and cryptography on a chip. The summaries in the book's chapters facilitate an understanding of the field and enable the application of optical waveguides in a variety of optical systems. The ultimate goal of this work is aimed at accelerating the transition of on-chip photonics from academia to the industry. Each chapter, where appropriate, provides an overview of the computational tools, fabrication methods, and suggestions for the realization of on-chip photonic devices. Introduces advanced concepts of passive and active on-chip photonic components Discusses emerging applications of on-chip photonics, quantum technologies, computing, and more Reviews materials, computational tools, and suggestions for the realization of on-chip photonic devices

Download or read book Integrated Nanophotonics written by Peng Yu and published by John Wiley & Sons. This book was released on 2023-05-31 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt: Integrated Nanophotonics Helps readers understand the important advances in nanophotonics materials development and their latest applications This book introduces the current state of and emerging trends in the development of integrated nanophotonics. Written by three well-qualified authors, it systematically reviews the knowledge of integrated nanophotonics from theory to the most recent technological developments. It also covers the applications of integrated nanophotonics in essential areas such as neuromorphic computing, biosensing, and optical communications. Lastly, it brings together the latest advancements in the key principles of photonic integrated circuits, plus the recent advances in tackling the barriers in photonic integrated circuits. Sample topics included in this comprehensive resource include: Platforms for integrated nanophotonics, including lithium niobate nanophotonics, indium phosphide nanophotonics, silicon nanophotonics, and nonlinear optics for integrated photonics The devices and technologies for integrated nanophotonics in on-chip light sources, optical packaging of photonic integrated circuits, optical interconnects, and light processing devices Applications on neuromorphic computing, biosensing, LIDAR, and computing for AI and artificial neural network and deep learning Materials scientists, physicists, and physical chemists can use this book to understand the totality of cutting-edge theory, research, and applications in the field of integrated nanophotonics.

Download or read book Low temperature Far infrared Spectra of Germanium and Silicon written by Peter J. Gielisse and published by . This book was released on 1964 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt: New high-resolution low-temperature (7.5K) far-infrared data on intrinsic germanium and silicon are presented. The findings further substantiate the naturally anticipated similarities in band patterns of the vibrational spectra of diamond type crystals. The low temperature spectra of germanium and silicon show clearly resolved splits in their principal absorption bands analogous to the intriguing doublet in the ca. 2000/cm band in diamond. A possible explanation is indicated. The room temperature far-infrared refractive index of both germanium and silicon and the 7.5K refractive index of germanium have been measured by means of interference fringes. (Author).

Download or read book Infrared Detectors written by Antonio Rogalski and published by CRC Press. This book was released on 2010-11-15 with total page 900 pages. Available in PDF, EPUB and Kindle. Book excerpt: Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un

Download or read book Non equilibrium SiGeSn Group IV Heterostructures and Nanowires for Integrated Mid infrared Photonics written by Anis Attiaoui and published by . This book was released on 2018 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: Progress in electronic devices has been increasingly limited by the heat generated due to Joule effect in high density electronic chips. Silicon (Si) integrated photonic circuits compatible with CMOS processing has been proposed as a viable solution to reduce the heating of devices while improving their overall performance. However, Si-based emitters are, until now, the most difficult components to design for these integrated photonic circuits. The main reason is the indirect band gap which severely limits the efficiency of Si emission and absorption of light. Recently, the incorporation of tin (Sn) into silicon-germanium alloys has been proposed to overcome this fundamental limit. The obtained semiconductors are Ge1-x-ySixSny ternary alloys of Group IV elements compatible with CMOS technology, and may have a band gap that is adjustable depending on the composition and the strain. These properties have generated a great interest to grow these semiconductors and to better understand their optoelectronic and physical properties. With this perspective, this work outlines detailed investigations of the band structure of strained and relaxed Ge1-x-ySixSny ternary alloys using a semi-empirical second nearest neighbors tight binding method. This method is based on an accurate evaluation of the deformation potential constants of Ge, Si, and a-Sn using a stochastic Monte-Carlo approach as well as a gradient based optimization method. Moreover, a new and efficient differential evolution approach is also developed to accurately reproduce the experimental effective masses and band gaps. Based on this, the influence of lattice disorder, strain, and composition on Ge1-x-ySixSny band gap energy and its directness were elucidated. For 0 d" d".4 and 0d"d".2, tensile strain lowered the critical content of Sn needed to achieve a direct band gap semiconductor with the corresponding band gap energies below 0.76 eV. This upper limit decreases to 0.43eV for direct gap, fully relaxed ternary alloys. The obtained transition to direct band gap is given by y>0.605x+0.077 and y>1.364x+0.107 for epitaxially strained and fully relaxed alloys, respectively. The effects of strain, at a fixed composition, on band gap directness were also investigated and discussed. Next, building upon the acquired knowledge from the band structure calculation, the analysis was extended toward quantifying the electron and hole confinement in a Ge1-ySny/Ge core/shell nanowire system. For that purpose, the conduction and valance band offsets were evaluated

Download or read book Silicon Based Photonics written by Erich Kasper and published by CRC Press. This book was released on 2020-07-24 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon photonics has evolved rapidly as a research topic with enormous application potential. The high refractive index contrast of silicon-on-insulator (SOI) shows great promise for submicron waveguide structures suited for integration on the chip scale in the near-infrared region. Ge- and GeSn-Si heterostructures with different elastic strain levels already provide expansion of the spectral range, high-speed operation, efficient modulation and switching of optical signals, and enhanced light emission and lasing. This book focuses on the integration of heterostructure devices with silicon photonics. The authors have attempted to merge a concise treatment of classical silicon photonics with a description of principles, prospects, challenges, and technical solution paths of adding silicon-based heterostructures. The book discusses the basics of heterostructure-based silicon photonics, system layouts, and key device components, keeping in mind the application background. Special focus is placed on SOI-based waveguide configurations and Ge- and GeSn-Si heterostructure devices for light detection, modulation, and light emission and lasing. The book also provides an overview of the technological and materials science challenges connected with integration on silicon. The first half of the book is mainly for readers who are interested in the topic because of its increasing importance in different fields, while the latter half covers different device structures for light emission, detection, modulation, extension of the wavelength beyond 1.6 μm, and lasing, as well as future challenges.

Download or read book Si based Germanium tin GeSn Emitters for Short wave Infrared Optoelectronics written by Seyed Amir Ghetmiri and published by . This book was released on 2016 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: Conventional integrated electronics have reached a physical limit, and their efficiency has been influenced by the generated heat in the high-density electronic packages. Integrated photonic circuits based on the highly developed Si complementary-metal-oxide-semiconductor (CMOS) infrastructure was proposed as a viable solution; however, Si-based emitters are the most challenging component for the monolithic integrated photonic circuits. The indirect bandgap of silicon and germanium is a bottleneck for the further development of photonic and optoelectronic integrated circuits. The Ge1-xSnx alloy, a group IV material system compatible with Si CMOS technology, was suggested as a desirable material that theoretically exhibits a direct bandgap when Sn composition increases. Last decade, efforts were made to develop high quality Ge1-xSnx films on Si substrate using commercial reactors. Moreover, the effect of Sn composition on the bandgap energy of Ge1-xSnx alloys was theoretically investigated. In this work, the development of Si-based Ge1-xSnx emitters was pursued with study the temperature-dependent bandgap emission of Ge1-xSnx structures for the short-wave infrared (SWIR) wavelength range (between 1.5 to 3 æm). The photoluminescence (PL) emissions from the bandgap of Ge1-xSnx films were investigated and a direct bandgap Ge1-xSnx was demonstrated for the first time based on the careful analysis of the PL spectra line-width and also the strain-dependent bandgap concept. In addition, the Ge1-xSnx advanced structure including SiGeSn/GeSn/SiGeSn single quantum well (QW) and Ge/Ge0.92Sn0.08/Ge double heterostructures (DHS) were studied. The GeSn QW PL emission was scrutinized from 10 to 300 K and the carrier confinement was analyzed through band offset calculations in the QW structure. Moreover, the electrical and optical characteristics of n-i-p Ge/Ge0.92Sn0.08/Ge light emitting diodes (LEDs) with surface emitting and edge emitting configurations were examined at different temperatures. Additionally, the lasing performance from the DHS Ge/Ge0.89Sn0.11/Ge waveguide was experimentally investigated based on the concept of direct bandgap Ge1-xSnx films and the confinement of carriers and optical field within the Ge/Ge0.89Sn0.11/Ge structure. Finally, an optimized QW design has been proposed that features a direct bandgap Ge0.9Sn0.1 QW with Type-I band alignment favorable for the high carrier confinement and low threshold Ge1-xSnx QW devices.

Download or read book Fibre Optic Communication Devices written by Norbert Grote and published by Springer Science & Business Media. This book was released on 2001-01-26 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronic devices and fibre optics are the basis of cutting-edge communication systems. This monograph deals with the various components of these systems, including lasers, amplifiers, modulators, converters, filters, sensors, and more.

Download or read book Future Directions in Silicon Photonics written by and published by Academic Press. This book was released on 2019-08-16 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: Future Directions in Silicon Photonics, Volume 101 in the Semiconductors and Semimetals series, highlights new advances in the field, with this updated volume presenting the latest developments as discussed by esteemed leaders in the field silicon photonics. Provides the authority and expertise of leading contributors from an international board of authors Represents the latest release in the Semiconductors and Semimetals series Includes the latest information on Silicon Photonics

Download or read book Optical Fiber Telecommunications VIA written by Radhakrishnan Nagarajan and published by Elsevier Inc. Chapters. This book was released on 2013-05-03 with total page 117 pages. Available in PDF, EPUB and Kindle. Book excerpt: This chapter covers the field of semiconductor photonic integrated circuits (PIC) used in access, metro, long-haul, and undersea telecommunication networks. Although there are many variants to implementing optical integration; the focus is on monolithic integration where multiple semiconductor devices, up to many hundreds in some cases, are integrated onto the same substrate. Monolithic integration poses the greatest technical challenge and the biggest opportunity for bandwidth and size scaling. The PICs discussed here are based on the two most popular semiconductor material systems: Groups III–V indium phosphide-based devices and Group IV silicon-based devices. The chapter also covers the historical evolution of the technology from the decades old original proposal to the current day terabit/s class, coherent PICs.