Download or read book Formation and Properties of Dislocations During Crystal Growth of Bulk Silicon Carbide by the Physical Vapor Transport Method written by Sakwe Aloysius Sakwe and published by . This book was released on 2008 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide written by Peter Friedrichs and published by John Wiley & Sons. This book was released on 2011-04-08 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
Download or read book Finite Element Modeling of Dislocation Multiplication in Silicon Carbide Crystals Grown by Physical Vapor Transport Method written by Qingde Chen and published by . This book was released on 2015 with total page 133 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide as a representative wide band-gap semiconductor has recently received wide attention due to its excellent physical, thermal and especially electrical properties. It becomes a promising material for electronic and optoelectronic device under high-temperature, high-power and high-frequency and intense radiation conditions. During the Silicon Carbide crystal grown by the physical vapor transport process, the temperature gradients induce thermal stresses which is a major cause of the dislocations multiplication. Although large dimension crystal with low dislocation density is required for satisfying the fast development of electronic and optoelectronic device, high dislocation densities always appear in large dimension crystal. Therefore, reducing dislocation density is one of the primary tasks of process optimization. This dissertation aims at developing a transient finite element model based on the Alexander-Haasen model for computing the dislocation densities in a crystal during its growing process. Different key growth parameters such as vi temperature gradient, crystal size will be used to investigate their influence on dislocation multiplications. The acceptable and optimal crystal diameter and temperature gradient to produce the lowest dislocation density in SiC crystal can be obtained through a thorough numerical investigation using this developed finite element model. The results reveal that the dislocation density multiplication in SiC crystal are easily affected by the crystal diameter and the temperature gradient. Generally, during the iterative calculation for SiC growth, the dislocation density multiples very rapidly in the early growth phase and then turns to a relatively slow multiplication or no multiplication at all. The results also show that larger size and higher temperature gradient causes the dislocation density enters rapid multiplication phase sooner and the final dislocation density in the crystal is higher.
Download or read book Silicon Carbide and Related Materials 2017 written by Robert Stahlbush and published by Trans Tech Publications Ltd. This book was released on 2018-06-05 with total page 1042 pages. Available in PDF, EPUB and Kindle. Book excerpt: ICSCRM 2017 Selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), September 17-22, 2017, Washington, DC, USA
Download or read book Silicon Carbide and Related Materials 2018 written by Peter M. Gammon and published by Trans Tech Publications Ltd. This book was released on 2019-07-19 with total page 916 pages. Available in PDF, EPUB and Kindle. Book excerpt: 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK
Download or read book CVD growth of SiC for high power and high frequency applications written by Robin Karhu and published by Linköping University Electronic Press. This book was released on 2019-02-14 with total page 55 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) is a wide bandgap semiconductor that has attracted a lot of interest for electronic applications due to its high thermal conductivity, high saturation electron drift velocity and high critical electric field strength. In recent years commercial SiC devices have started to make their way into high and medium voltage applications. Despite the advancements in SiC growth over the years, several issues remain. One of these issues is that the bulk grown SiC wafers are not suitable for electronic applications due to the high background doping and high density of basal plane dislocations (BPD). Due to these problems SiC for electronic devices must be grown by homoepitaxy. The epitaxial growth is performed in chemical vapor deposition (CVD) reactors. In this work, growth has been performed in a horizontal hot-wall CVD (HWCVD) reactor. In these reactors it is possible to produce high-quality SiC epitaxial layers within a wide range of doping, both n- and p-type. SiC is a well-known example of polytypism, where the different polytypes exist as different stacking sequences of the Si-C bilayers. Polytypism makes polytype stability a problem during growth of SiC. To maintain polytype stability during homoepitaxy of the hexagonal polytypes the substrates are usually cut so that the angle between the surface normal and the c-axis is a few degrees, typically 4 or 8°. The off-cut creates a high density of micro-steps at the surface. These steps allow for the replication of the substrates polytype into the growing epitaxial layer, the growth will take place in a step-flow manner. However, there are some drawbacks with step-flow growth. One is that BPDs can replicate from the substrate into the epitaxial layer. Another problem is that 4H-SiC is often used as a substrate for growth of GaN epitaxial layers. The epitaxial growth of GaN has been developed on on-axis substrates (surface normal coincides with c-axis), so epitaxial 4H-SiC layers grown on off-axis substrates cannot be used as substrates for GaN epitaxial growth. In efforts to solve the problems with off-axis homoepitaxy of 4H-SiC, on-axis homoepitaxy has been developed. In this work, further development of wafer-scale on-axis homoepitaxy has been made. This development has been made on a Si-face of 4H-SiC substrates. The advances include highly resistive epilayers grown on on-axis substrates. In this thesis the ability to control the surface morphology of epitaxial layers grown on on-axis homoepitaxy is demonstrated. This work also includes growth of isotopically enriched 4H-SiC on on-axis substrates, this has been done to increase the thermal conductivity of the grown epitaxial layers. In (paper 1) on-axis homoepitaxy of 4H-SiC has been developed on 100 mm diameter substrates. This paper also contains comparisons between different precursors. In (paper 2) we have further developed on-axis homoepitaxy on 100 mm diameter wafers, by doping the epitaxial layers with vanadium. The vanadium doping of the epitaxial layers makes the layers highly resistive and thus suitable to use as a substrate for III-nitride growth. In (paper 3) we developed a method to control the surface morphology and reduce the as-grown surface roughness in samples grown on on-axis substrates. In (paper 4) we have increased the thermal conductivity of 4H-SiC epitaxial layers by growing the layers using isotopically enriched precursors. In (paper 5) we have investigated the role chlorine have in homoepitaxial growth of 4H-SiC. In (paper 6) we have investigated the charge carrier lifetime in as-grown samples and traced variations in lifetime to structural defects in the substrate. In (paper 7) we have investigated the formation mechanism of a morphological defect in homoepitaxial grown 4H-SiC.
Download or read book Kinetics of Silicon Carbide Single Crystal Growth in the Physical Vapor Transport Process written by and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide and Related Materials 2012 written by Alexander A. Lebedev and published by Trans Tech Publications Ltd. This book was released on 2013-01-25 with total page 1200 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). The volume on Silicon Carbide and Related Materials is divided into 10 chapters ranging from Bulk growth to Device and application. The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 ms) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1- cm2, 15 kV class bipolar devices have been demonstrated, including PN Diodes, IGBTs and GTO. In general, the number of contributions devoted to application of SiC and related materials, GaN and solid solutions based on this material, and graphene is steadily increasing compared to the 2011 edition.
Download or read book Crystal Dislocations Their Impact on Physical Properties of Crystals written by Peter Lagerlof and published by MDPI. This book was released on 2019-01-09 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a printed edition of the Special Issue "Crystal Dislocations: Their Impact on Physical Properties of Crystals" that was published in Crystals
Download or read book Single Crystals of Electronic Materials written by Roberto Fornari and published by Woodhead Publishing. This book was released on 2018-09-18 with total page 596 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single Crystals of Electronic Materials: Growth and Properties is a complete overview of the state-of-the-art growth of bulk semiconductors. It is not only a valuable update on the body of information on crystal growth of well-established electronic materials, such as silicon, III-V, II-VI and IV-VI semiconductors, but also includes chapters on novel semiconductors, such as wide bandgap oxides like ZnO, Ga2, O3, In2, O3, Al2, O3, nitrides (AIN and GaN), and diamond. Each chapter focuses on a specific material, providing a comprehensive overview that includes applications and requirements, thermodynamic properties, schematics of growth methods, and more. - Presents the latest research and most comprehensive overview of both standard and novel semiconductors - Provides a systematic examination of important electronic materials, including their applications, growth methods, properties, technologies and defect and doping issues - Takes a close look at emerging materials, including wide bandgap oxides, nitrides and diamond
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 1460 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Download or read book Silicon Carbide materials Processing and Devices written by and published by . This book was released on 2000 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Dislocation Arrangements in 4H SiC and Their Influence on the Local Crystal Lattice Properties written by and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Two wafers of one 4H-silicon carbide (4H-SiC) bulk crystal, one cut from a longitudinal position close to the crystal's seed and the other close to the cap, were characterized with synchrotron white-beam X-ray topography (SWXRT) in back-reflection and transmission geometry to investigate the dislocation formation and propagation during growth. For the first time, full wafer mappings were recorded in 00012 back-reflection geometry with a CCD camera system, providing an overview of the dislocation arrangement in terms of dislocation type, density and homogeneous distribution. Furthermore, by having similar resolution to conventional SWXRT photographic film, the method enables identification of individual dislocations, even single threading screw dislocations, which appear as white spots with a diameter in the range of 10 to 30 μm. Both investigated wafers showed a similar dislocation arrangement, suggesting a constant propagation of dislocations during crystal growth. A systematic investigation of crystal lattice strain and tilt at selected wafer areas with different dislocation arrangements was achieved with high-resolution X-ray diffractometry reciprocal-space map (RSM) measurements in the symmetric 0004 reflection. It was shown that the diffracted intensity distribution of the RSM for different dislocation arrangements depends on the locally predominant dislocation type and density. Moreover, the orientation of specific dislocation types along the RSM scanning direction has a strong influence on the local crystal lattice properties
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Crystal Growth and Dislocations written by Ajit Ram Verma and published by . This book was released on 1953 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide III nitrides and Related Materials written by Gerhard Pensl and published by . This book was released on 1998 with total page 756 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Crystal Dislocations Their Impact on Physical Properties of Crystals written by Peter Lagerlof and published by . This book was released on 2018 with total page 1 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proposed existence of the edge and screw dislocation in the 1930s, and the subsequent work showing that dislocation theory could explain the plastic deformation of crystals, represent an important step in developing our understanding of materials into a science. The continued work involved with characterization of dislocations and linking them to a variety of physical properties in both single and poly crystals have made enormous progress over the past 50 years. It is rare to find a technical application involving a material with any crystal structure that is not impacted by dislocations; mechanical properties, massive phase transformations, interphases, crystal growth, electronic properties, the list goes on. In many systems the properties is controlled by the formation of partial dislocations separated by a stacking fault; for example plastic deformation via deformation twinning. And finally, giant strides have been made in characterization and modeling of systems containing dislocations. The Special Issue on “Crystal Dislocations” is intended to provide a unique international forum aimed at covering a broad range of results involving dislocations and their importance on crystal properties and crystal growth. Scientists working in a wide range of disciplines are invited to contribute to this cause.Dr. K. Peter D. Lagerlof, Associate Professor of CeramicsGuest Editor
