Download or read book Finite Element Analysis and Electron Beam Lithographic Fabrication of Gallium Arsenide Schottky Barrier Diodes with Sub micron Features written by J. B. Langley and published by . This book was released on 1980 with total page 93 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Mathematics of Finite Elements and Applications IV written by John Robert Whiteman and published by . This book was released on 1982 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Index to IEEE Publications written by Institute of Electrical and Electronics Engineers and published by . This book was released on 1979 with total page 752 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues for 1973- cover the entire IEEE technical literature.

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Aluminum Oxide Passivation of Electron Beam Semiconductor Silicon and Gallium Arsenide Diodes written by Wieslaw W. Siekanowicz and published by . This book was released on 1974 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt: Beam-evaporated aluminum oxide constitutes a highly promising material for passivation of electron-beam-semiconductor targets. Aluminum-oxide-passivated targets are characterized by reverse breakdown voltages that range from 80% to essentially the full breakdown value and reverse leakage currents that are less than one microampere. A life of 2600 hours was demonstrated on an aluminum-oxide-passivated silicon pn-junction at a current gain of 2200, a beam voltage of 12 kV, and power and current densities of 42 W and 0.82 A/sq. mm, respectively. A life of 770 hours has been accumulated on a gallium-arsenide Schottky-barrier diode at a current gain of 2000, a beam voltage of 12.8 kV, power and current densities of 20 W and 0.48 A/sq. mm, respectively. The active diameter of each target was 0.012 inch. (Author).

Download or read book Current Programs written by and published by . This book was released on 1977 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1118 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Conference Papers Index written by and published by . This book was released on 1980 with total page 1198 pages. Available in PDF, EPUB and Kindle. Book excerpt: Monthly. Papers presented at recent meeting held all over the world by scientific, technical, engineering and medical groups. Sources are meeting programs and abstract publications, as well as questionnaires. Arranged under 17 subject sections, 7 of direct interest to the life scientist. Full programs of meetings listed under sections. Entry gives citation number, paper title, name, mailing address, and any ordering number assigned. Quarterly and annual indexes to subjects, authors, and programs (not available in monthly issues).

Download or read book Government reports annual index written by and published by . This book was released on 199? with total page 1132 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design and Fabrication of Submicron Gallium Arsenide MESFET Digital Circuits written by Harold Michael Levy and published by . This book was released on 1982 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Government Reports Annual Index Keyword A L written by and published by . This book was released on 1987 with total page 1260 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication of GaAs Devices written by Albert G. Baca and published by IET. This book was released on 2005-09 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.

Download or read book Technical Digest 1974 International Electron Devices Meeting written by and published by . This book was released on 1973 with total page 654 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Surface Passivation and Metallization for Schottky Diodes written by Alex Molina and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research into gallium nitride (GaN) has borne fruit and holds further promise for the optoelectronics and electronics industries. Among the fields of active research is exploiting GaN for power electronics, with one example being Schottky barriers as power rectifiers. However, one challenge in implementing GaN-based technologies arises from the device processing and choices involved when fabricating metal/semiconductor contacts. Consequently, a study of metallizations to GaN based on thermodynamics with careful selection of the surface treatment and deposition techniques is of the upmost importance. The first objective of this dissertation was to understand the role of HBr in lessening the contaminants on various semiconductor surfaces. Motivated initially a need to passivate Ge nanostructures, HBr vapor was used to remove the native oxide and passivate a Ge wafer, and x-ray photoelectron spectroscopy (XPS) was used to study the surface. For exposures of at least 20 min above the 48% HBr solution, we found a clear reduction in the amount of oxide present. Interestingly, stability against reoxidation in air was greatly improved using longer exposures to HBr vapor, and XPS reveals that bromine is adsorbed onto these surfaces, suggesting that it is physically blocking H2O and O2 molecules from coming into contact and reoxidizing the Ge surface. Given its success as a surface treatment, aqueous HBr was also tested on GaN. The GaN surfaces, examined by XPS, exhibited no noticeable difference in C and O surface contaminants between HBr and HCl, which is widely used for cleaning GaN surfaces. This finding enhanced our confidence in the efficacy of using HCl for surface preparation. The main objective of this dissertation was to choose a pure transition metal, metal alloy, and compound metallization for GaN based on their thermodynamic stability against metallurgical reactions, high work functions, and conductivity. The only pure transition metal in thermodynamic equilibrium with GaN is rhenium (Re). Prior work on Re/n-GaN has demonstrated diodes with good thermal stability, but the diodes were not as high in quality as the ones produced in this dissertation, due in part to improved crystal growth technology as well as improvements in device processing in this dissertation. Re diodes were fabricated to study the effects of deposition, processing, and annealing on the electrical characteristics of the diodes. As-deposited diodes varied dramatically depending on deposition technique. Electron-beam evaporated Re/Au diodes consistently demonstrated low ideality factors (1.02-1.04) and high barrier heights (0.72-0.82 eV), whereas sputtered Re diodes had high ideality factors (1.26-1.73) and low barrier heights (0.38-0.41 eV), likely due to process-induced defects. However, a remarkable improvement was observed in their electrical characteristics when annealed at 500°C for 5 min in which the barrier height improved to 0.74 eV and the ideality factor to 1.02. Compared to baseline palladium (Pd) diodes fabricated on a similar substrate, the Re diodes were more resilient against annealing conditions that degrade their Pd counterparts. Pd diodes consistently showed degradation after a mild thermal excursion (250°C for 2 h) during dielectric deposition, where the barrier height changed from 0.99 eV to 0.92 eV and ideality factor from 1.02 to 1.13. After annealing at 600°C for 5 min (as a direct comparison to Re diodes) the Pd diodes' barrier height changed from 0.92 eV to 0.86 eV and ideality factor changed from 1.13 to 1.56, whereas the Re diodes remained stable. Stacked layers of Ni and Ga were also pursued as a metal gallide metallization given past success of nickel gallide contacts surviving high temperatures better than pure Ni contacts. However, preliminary current-voltage (I-V) characteristics found that our diodes degraded after annealing at 400°C and 600°C, which may be due to the inhomogeneity in Ga deposition, since Ga deposits with an uneven morphology. With some regions containing more Ga than others, Ni may still react in patches. This inhomogeneity across that diode resulted in low barrier heights and high ideality factors. Therefore, it was deemed beneficial to choose another contact to study. MoCxNy diodes deposited via remote plasma atomic layer deposition (PE-ALD) were also investigated as an attractive compound candidate. Not only is MoNx conductive, refractory, and thermally stable on GaN, it has a high work function and exhibits good adhesion to GaN. Films were examined by XPS, grazing incidence x-ray diffraction (GIXRD), and transmission electron microscopy (TEM) with energy dispersive spectroscopy (EDS) to determine their composition and structure. TEM reveals an abrupt interface between MoCxNy and n-GaN, and that MoCxNy adopts a cubic phase. Remarkably, XPS also shows a significant amount of carbon within the single cubic phase. It is hypothesized that our single-phase MoC0.3N0.7 film is a cubic NaCl-type structure with a lattice parameter of 0.42 nm that has C and N atoms occupying half of the sites on one sublattice. The incorporation of C in our film, and its occupation in the cubic crystal, could be playing a role in improving the electrical characteristics. The diodes demonstrated high barrier height (0.87 eV) after an anneal at 600°C for 5 min, with an ideality factor of 1.02 by I-V measurements, revealing potential for a thermally stable Schottky diode. The conclusions drawn and experiments developed augment the understanding of device fabrication, metallization, and processing for contacts to n-GaN applications for high-temperature and high-power electronics.

Download or read book Index to Scientific Technical Proceedings written by and published by . This book was released on 1978-07 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: Monthly, with annual cumulation. Published conference literature useful both as current awareness and retrospective tools that allow searching by authors of individual papers as well as by editors. Includes proceedings in all formats, i.e., books, reports, journal issues, etc. Complete bibliographical information for each conference proceedings appears in section titled Contents of proceedings, with accompanying category, permuterm subject, sponsor, author/editor, meeting location, and corporate indexes. Contains abbreviations used in organizational and geographical names.

Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Download or read book Au znte Schottky Barrier Fabrication by Low energy Ion Etching Techniques written by Henry R. Mannex and published by . This book was released on 1968 with total page 53 pages. Available in PDF, EPUB and Kindle. Book excerpt: A new method for semiconductor surface preparation for fabrication of metal-semiconductor rectifying heterojunctions is proposed and junctions of gold on gallium arsenide and gold on zinc telluride have been analyzed. The barrier heights for Au-GaAs diodes fabricated by low-energy (100 eV) ion etching of GaAs surfaces immediately prior to metalization were found to be in excellent agreement with barriers height of diodes fabricated by vacuum cleaving techniques. The most probable value of barrier height for Au-ZnTe structures fabricated by the ion etching technique was determined to be 0.48 eV with a maximum deviation of 0.03 eV. (Author).