Download or read book Ferroelectric Memories written by James F. Scott and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 255 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device physics, as well as on breakdown, leakage currents, switching mechanisms, and fatigue. State-of-the-art device designs are included and illustrated among the books many figures. More than 500 up-to-date references and 76 problems make it useful as a research reference for physicists, engineers and students.

Download or read book Development of HfO2 Based Ferroelectric Memories for Future CMOS Technology Nodes written by Stefan Ferdinand Müller and published by BoD – Books on Demand. This book was released on 2016-04-08 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis evaluates the viability of ferroelectric Si:HfO2 and its derived FeFET application for non-volatile data storage. At the beginning, the ferroelectric effect is explained briefly such that the applications that make use of it can be understood. Afterwards, the latest findings on ferroelectric HfO2 are reviewed and their potential impact on future applications is discussed. Experimental data is presented afterwards focusing on the ferroelectric material characteristics of Si:HfO2 that are most relevant for memory applications. Besides others, the stability of the ferroelectric switching effect could be demonstrated in a temperature range of almost 400 K. Moreover, nanosecond switching speed and endurance in the range of 1 million to 10 billion cycles could be proven. Retention and imprint characteristics have furthermore been analyzed and are shown to be stable for 1000 hours bake time at 125 oC. Derived from the ferroelectric effect in HfO2, a 28 nm FeFET memory cell is introduced as the central application of this thesis. Based on numerical simulations, the memory concept is explained and possible routes towards an optimized FeFET cell are discussed. Subsequently, the results from electrical characterization of FeFET multi-structures are presented and discussed. By using Si:HfO2 it was possible to realize the world's first 28 nm FeFET devices possessing i.a. 10k cycling endurance and an extrapolated 10 year data retention at room temperature. The next step towards a FeFET memory is represented by connecting several memory cells into matrix-type configurations. A cell concept study illustrates the different ways in which FeFET cells can be combined together to give high density memory arrays. For the proposed architectures, operational schemes are theoretically discussed and analyzed by both electrical characterization of FeFET multi-structures and numerical simulations. The thesis concludes with the electrical characterization of small FeFET memory arrays. First results show that a separation between memory states can be achieved by applying poling and incremental step pulse programming (ISPP) sequences. These results represent an important cornerstone for future studies on Si:HfO2 and its related applications.

Download or read book Ferroelectric Random Access Memories written by Hiroshi Ishiwara and published by Springer Science & Business Media. This book was released on 2004-04-16 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well.

Download or read book Ferroelectric Gate Field Effect Transistor Memories written by Byung-Eun Park and published by Springer Nature. This book was released on 2020-03-23 with total page 421 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Download or read book Emerging Nanoelectronic Devices written by An Chen and published by John Wiley & Sons. This book was released on 2014-11-12 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging Nanoelectronic Devices focuses on the future direction of semiconductor and emerging nanoscale device technology. As the dimensional scaling of CMOS approaches its limits, alternate information processing devices and microarchitectures are being explored to sustain increasing functionality at decreasing cost into the indefinite future. This is driving new paradigms of information processing enabled by innovative new devices, circuits, and architectures, necessary to support an increasingly interconnected world through a rapidly evolving internet. This original title provides a fresh perspective on emerging research devices in 26 up to date chapters written by the leading researchers in their respective areas. It supplements and extends the work performed by the Emerging Research Devices working group of the International Technology Roadmap for Semiconductors (ITRS). Key features: • Serves as an authoritative tutorial on innovative devices and architectures that populate the dynamic world of “Beyond CMOS” technologies. • Provides a realistic assessment of the strengths, weaknesses and key unknowns associated with each technology. • Suggests guidelines for the directions of future development of each technology. • Emphasizes physical concepts over mathematical development. • Provides an essential resource for students, researchers and practicing engineers.

Download or read book Switching Kinetics and Charge Transport in Organic Ferroelectrics written by Tim Cornelissen and published by Linköping University Electronic Press. This book was released on 2020-08-26 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continued digitalization of our society means that more and more things are getting connected electronically. Since currently used inorganic electronics are not well suited for these new applications because of costs and environmental issues, organic electronics can play an important role here. These essentially plastic materials are cheap to produce and relatively easy to recycle. Unfortunately, their poor performance has so far hindered widespread application beyond displays. One key component of any electronic device is the memory. For organic electronics several technologies are being investigated that could serve as memories. One of these are the ferroelectrics, materials that have a spontaneous electrical polarization that can be reversed with an electric field. This bistable polarization which shows hysteresis makes these materials excellent candidates for use as memories. This thesis focuses on a specific type of organic ferroelectric, the supramolecular discotics. These materials consist of disk?like molecules that form columns in which all dipolar groups are aligned, giving a macroscopic ferroelectric polarization. Of particular interest are the benzenetricarboxamides (BTA), which are used as a model system for the whole class of discotic ferroelectrics. BTA uses a core?shell architecture which allows for easy modification of the molecular structure and thereby the ferroelectric properties. To gain a deeper understanding of the switching processes in this organic ferroelectric BTA, both microscopic and analytical modeling are used. This is supported by experimental data obtained through electrical characterization. The microscopic model reduces the material to a collection of dipoles and uses electrostatics to calculate the probability that these dipoles flip. These flipping rates are the input for a kinetic Monte Carlo simulation (kMC), which simulates the behavior of the dipoles over time. With this model we simulated three different switching processes on experimental time and length scales: hysteresis loops, spontaneous depolarization, and switching transients. The results of these simulations showed a good agreement with experiments and we can rationalize the obtained parameter dependencies in the framework of thermally activated nucleation limited switching (TA?NLS). The microscopic character of the model allows for a unique insight into the nucleation process of the polarization switching. We found that nucleation happens at different locations for field driven polarization switching as compared to spontaneous polarization switching. Field?driven nucleation happens at the contacts, whereas spontaneous depolarization starts at defects. This means that retention times in disordered ferroelectrics could be improved by reducing the disorder, without affecting the coercive field. Detailed analysis of the nucleation process also revealed a critical nucleation volume that decreases with applied field, which explains the Merz?like field?dependence of the switching time observed in experiments. In parallel to these microscopic simulations we developed an analytical framework based on the theory of TA?NLS. This framework is mainly focused on describing the switching transients of disordered ferroelectrics. It can be combined with concepts of the Preisach model, which considers a non?ideal ferroelectric as a collection of ideal hysterons. We were able to relate these hysterons and the distribution in their up? and down?switching fields to the microscopic structure of the material and use the combined models to explain experimentally observed dispersive switching kinetics. Whereas ferroelectrics on their own could potentially serve as memories, the readout of ferroelectric memories becomes easier if they are combined with semiconductors. We have introduced several molecular materials following the same design principle of a core?shell structure, which uniquely combine ferroelectricity and semiconductivity in one material. The experimental IV?curves of these materials could be described using an asymmetric Marcus hopping model and show their potential as memories. The combination of modeling and experimental work in this thesis thereby provides an increased understanding of organic ferroelectrics, which is crucial for their application as memories.

Download or read book Advances in Non volatile Memory and Storage Technology written by Yoshio Nishi and published by Woodhead Publishing. This book was released on 2019-06-15 with total page 662 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping and resistive random access memory

Download or read book Nonvolatile Memory Technologies with Emphasis on Flash written by Joe Brewer and published by John Wiley & Sons. This book was released on 2011-09-23 with total page 766 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presented here is an all-inclusive treatment of Flash technology, including Flash memory chips, Flash embedded in logic, binary cell Flash, and multilevel cell Flash. The book begins with a tutorial of elementary concepts to orient readers who are less familiar with the subject. Next, it covers all aspects and variations of Flash technology at a mature engineering level: basic device structures, principles of operation, related process technologies, circuit design, overall design tradeoffs, device testing, reliability, and applications.

Download or read book Science and Technology of Integrated Ferroelectrics written by Carlos Pazde-Araujo and published by CRC Press. This book was released on 2001-01-11 with total page 764 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of this book is to present in one volume some of the most significant developments that have taken place in the field of integrated ferroelectrics during the last decade of the twentieth century. The book begins with a comprehensive introduction to integrated ferroelectrics and follows with fifty-three papers selected by Carlos Paz de Araujo, Orlando Auciello, Ramamoorthy Ramesh, and George W. Taylor. These fifty-three papers were selected from more than one thousand papers published over the last eleven years in the proceedings of the International Symposia on Integrated Ferroelectrics (ISIF). These papers were chosen on the basis that they (a) give a broad view of the advances that have been made and (b) indicate the future direction of research and technological development. Readers who wish for a more in-depth treatment of the subject are encouraged to refer to volumes 1 to 27 of Integrated Ferroelectrics, the main publication vehicle for papers in this field.

Download or read book Ferroelectrics Literature Index written by T. F. Connolly and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 713 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research on ferroelectricity and ferroelectric materials started in 1920 with the discovery by Valasek that the variation of spontaneous polarization in Rochelle salt with sign and magnitude of an applied electric field traced a complete and reproducible hysteresis loop. Activity in the field was sporadic until 1935, when Busch and co-workers announced the observation of similar behavior in potassium dihydrogen phosphate and related compounds. Progress thereafter continued at a modest level with the undertaking of some theoretical as well as further experimental studies. In 1944, von Hippel and co-workers discovered ferroelectricity in barium titanate. The technological importance of ceramic barium titanate and other perovskites led to an upsurge of interest, with many new ferroelectrics being identified in the following decade. By 1967, about 2000 papers on various aspects of ferroelectricity had been published. The bulk of this widely dispersed literature was concerned with the experimental measurement of dielectric, crystallographic, thermal, electromechanical, elastic, optical, and magnetic properties. A critical and excellently organized cpmpilation based on these data appeared in 1969 with the publica tion of Landolt-Bornstein, Volume 111/3. This superb tabulation gave instant access to the results in the literature on nearly 450 pure substances and solid solutions of ferroelectric and antiferroelectric materials. Continuing interest in ferroelectrics, spurred by the growing importance of electrooptic crystals, resulted in the publication of almost as many additional papers by the end of 1969 as had been surveyed in Landolt-Bornstein.

Download or read book Gate Stack Engineering for Emerging Polarization based Non volatile Memories written by Milan Pesic and published by BoD – Books on Demand. This book was released on 2017-07-14 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as the main requirements for future memories. These remarkable properties of ferroelectric memories make them promising candidates for non-volatile memories that would bridge the speed gap between fast logic and slow off-chip, long term storage. Even though the retention of hafnia based ferroelectric memories can be extrapolated to a ten-year specification target, they suffer from a rather limited endurance. Therefore, this work targets relating the field cycling behavior of hafnia based ferroelectric memories to the physical mechanisms taking place within the film stack. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for novel, superior devices. In the frame of this work, an in-depth ferroelectric and dielectric characterization, analysis and TEM study was combined with comprehensive modeling approach. Drift and diffusion based vacancy redistribution was found as the main cause for the phase transformation and consequent increase of the remnant polarization, while domain pinning and defect generation is identified to be responsible for the device fatigue. Finally, based on Landau theory, a simple way to utilize the high endurance strength of anti-ferroelectric (AFE) materials and achieve non-volatility in state-of-the-art DRAM stacks was proposed and the fabrication of the world's first non-volatile AFE-RAM is reported. These findings represent an important milestone and pave the way toward a commercialization of (anti)ferroelectric non-volatile memories based on simple binary-oxides.

Download or read book Emerging Memories written by Betty Prince and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging Memories: Technologies and Trends attempts to provide background and a description of the basic technology, function and properties of emerging as well as discussing potentially suitable applications. This book explores a range of new memory products and technologies. The concept for some of these memories has been around for years. A few completely new. Some involve materials that have been in volume production in other type of devices for some time. Ferro-electrics, for example, have been used in capacitors for more than 30 years. In addition to looking at using known devices and materials in novel ways, there are new technologies being investigated such as DNA memories, light memories, molecular memories, and carbon nanotube memories, as well as the new polymer memories which hold the potential for the significant manufacturing reduction. Emerging Memories: Technologies and Trends is a useful reference for the professional engineer in the semiconductor industry.

Download or read book Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films written by Ekaterina Yurchuk and published by Logos Verlag Berlin GmbH. This book was released on 2015-06-30 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2 thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO2-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

Download or read book Ferroelectrics written by Mickaël Lallart and published by BoD – Books on Demand. This book was released on 2011-08-24 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectric materials have been and still are widely used in many applications, that have moved from sonar towards breakthrough technologies such as memories or optical devices. This book is a part of a four volume collection (covering material aspects, physical effects, characterization and modeling, and applications) and focuses on ways to obtain high-quality materials exhibiting large ferroelectric activity. The book covers the aspect of material synthesis and growth, doping and composites, lead-free devices, and thin film synthesis. The aim of this book is to provide an up-to-date review of recent scientific findings and recent advances in the field of ferroelectric materials, allowing a deep understanding of the material aspects of ferroelectricity.

Download or read book Flash Memories written by Paulo Cappelletti and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt: A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].

Download or read book Semiconductor Memories and Systems written by Andrea Redaelli and published by Woodhead Publishing. This book was released on 2022-06-07 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Memories and Systems provides a comprehensive overview of the current state of semiconductor memory at the technology and system levels. After an introduction on market trends and memory applications, the book focuses on mainstream technologies, illustrating their current status, challenges and opportunities, with special attention paid to scalability paths. Technologies discussed include static random access memory (SRAM), dynamic random access memory (DRAM), non-volatile memory (NVM), and NAND flash memory. Embedded memory and requirements and system level needs for storage class memory are also addressed. Each chapter covers physical operating mechanisms, fabrication technologies, and the main challenges to scalability. Finally, the work reviews the emerging trends for storage class memory, mainly focusing on the advantages and opportunities of phase change based memory technologies. Features contributions from experts from leading companies in semiconductor memory Discusses physical operating mechanisms, fabrication technologies and paths to scalability for current and emerging semiconductor memories Reviews primary memory technologies, including SRAM, DRAM, NVM and NAND flash memory Includes emerging storage class memory technologies such as phase change memory

Download or read book Memories for the Intelligent Internet of Things written by Betty Prince and published by John Wiley & Sons. This book was released on 2018-04-18 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: A detailed, practical review of state-of-the-art implementations of memory in IoT hardware As the Internet of Things (IoT) technology continues to evolve and become increasingly common across an array of specialized and consumer product applications, the demand on engineers to design new generations of flexible, low-cost, low power embedded memories into IoT hardware becomes ever greater. This book helps them meet that demand. Coauthored by a leading international expert and multiple patent holder, this book gets engineers up to speed on state-of-the-art implementations of memory in IoT hardware. Memories for the Intelligent Internet of Things covers an array of common and cutting-edge IoT embedded memory implementations. Ultra-low-power memories for IoT devices-including plastic and polymer circuitry for specialized applications, such as medical electronics-are described. The authors explore microcontrollers with embedded memory used for smart control of a multitude of Internet devices. They also consider neuromorphic memories made in Ferroelectric RAM (FeRAM), Resistance RAM (ReRAM), and Magnetic RAM (MRAM) technologies to implement artificial intelligence (AI) for the collection, processing, and presentation of large quantities of data generated by IoT hardware. Throughout the focus is on memory technologies which are complementary metal oxide semiconductor (CMOS) compatible, including embedded floating gate and charge trapping EEPROM/Flash along with FeRAMS, FeFETs, MRAMs and ReRAMs. Provides a timely, highly practical look at state-of-the-art IoT memory implementations for an array of product applications Synthesizes basic science with original analysis of memory technologies for Internet of Things (IoT) based on the authors' extensive experience in the field Focuses on practical and timely applications throughout Features numerous illustrations, tables, application requirements, and photographs Considers memory related security issues in IoT devices Memories for the Intelligent Internet of Things is a valuable working resource for electrical engineers and engineering managers working in the electronics system and semiconductor industries. It is also an indispensable reference/text for graduate and advanced undergraduate students interested in the latest developments in integrated circuit devices and systems.