Download or read book Analog BiCMOS Design written by James C. Daly and published by CRC Press. This book was released on 2018-10-08 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: Integrated circuits (ICs) don't always work the first time. Many things can and do go wrong in analog circuit designs. There are a number of common errors that often require costly chip redesign and refabrication, all of which can be avoided when designers are aware of the pitfalls. To realize success, IC designers need a complete toolbox-a toolbox filled not only with a solid background in electronics, design concepts and analysis skills, but also with the most valuable tool of all: experience. Analog BiCMOS Design offers IC design engineers the learning equivalent to decades of practical experience. Culled from the careers of practicing engineers, it presents the most effective methods and the pitfalls most frequently encountered in the design of biCMOS integrated circuits. Accessible to anyone who has taken a course in electronics, this book covers the basic design of bandgap voltage references, current mirrors, amplifiers, and comparators. It reviews common design errors often overlooked and offers design techniques used to remedy those problems. With its complete coverage of basic circuit building blocks, full details of common design pitfalls, and a compendium of design and layout problems and solutions, Analog BiCMOS Design is the perfect reference for IC designers and engineers, fledgling and experienced alike. Read it to reinforce your background, browse it for ideas on avoiding pitfalls, and when you run into a problem, use it to find a solution.

Download or read book Matching Properties of Deep Sub Micron MOS Transistors written by Jeroen A. Croon and published by Springer Science & Business Media. This book was released on 2005-03-24 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.

Download or read book Digital BiCMOS Integrated Circuit Design written by Sherif H.K. Embabi and published by Springer. This book was released on 1993 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: Digital BiCMOS Integrated Circuit Design is the first book devoted entirely to the analysis and design of digital BiCMOS integrated circuits. BiCMOS Integrated Circuit Design also reviews CMOS and CML integrated circuit design. The application of BiCMOS in the design of digital subsystems, e.g. adders, multipliers, RAMs and PLAs is addressed. The book also introduces the reader to IC process technology: CMOS, bipolar and BiCMOS. The modeling of both the bipolar and MOS devices are covered. Many process/device/circuit design issues are discussed. Digital BiCMOS Integrated Circuit Design can be used by engineers, researchers, graduate and senior undergraduate students working in the area of digital integrated circuits, digital circuits and system design, BiCMOS process and device modeling.

Download or read book Low Voltage CMOS Log Companding Analog Design written by Francisco Serra-Graells and published by Springer Science & Business Media. This book was released on 2003-06-30 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low-Voltage CMOS Log Companding Analog Design presents in detail state-of-the-art analog circuit techniques for the very low-voltage and low-power design of systems-on-chip in CMOS technologies. The proposed strategy is mainly based on two bases: the Instantaneous Log Companding Theory, and the MOSFET operating in the subthreshold region. The former allows inner compression of the voltage dynamic-range for very low-voltage operation, while the latter is compatible with CMOS technologies and suitable for low-power circuits. The required background on the specific modeling of the MOS transistor for Companding is supplied at the beginning. Following this general approach, a complete set of CMOS basic building blocks is proposed and analyzed for a wide variety of analog signal processing. In particular, the covered areas include: amplification and AGC, arbitrary filtering, PTAT generation, and pulse duration modulation (PDM). For each topic, several case studies are considered to illustrate the design methodology. Also, integrated examples in 1.2um and 0.35um CMOS technologies are reported to verify the good agreement between design equations and experimental data. The resulting analog circuit topologies exhibit very low-voltage (i.e. 1V) and low-power (few tenths of uA) capabilities. Apart from these specific design examples, a real industrial application in the field of hearing aids is also presented as the main demonstrator of all the proposed basic building blocks. This system-on-chip exhibits true 1V operation, high flexibility through digital programmability and very low-power consumption (about 300uA including the Class-D amplifier). As a result, the reported ASIC can meet the specifications of a complete family of common hearing aid models. In conclusion, this book is addressed to both industry ASIC designers who can apply its contents to the synthesis of very low-power systems-on-chip in standard CMOS technologies, as well as to the teachers of modern circuit design in electronic engineering.

Download or read book Matching Properties of Deep Sub Micron MOS Transistors written by Jeroen A. Croon and published by Springer. This book was released on 2008-11-01 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.