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Book Epitaxial Growth and Real time Electron Diffraction Analysis of Advanced III V Semiconductor based Quantum Dots

Download or read book Epitaxial Growth and Real time Electron Diffraction Analysis of Advanced III V Semiconductor based Quantum Dots written by Manori Vajira Chintha Gunasekera and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The impact of growth kinetics on structural properties significantly affects optical and electronic performances of self-assembled Stranski-Krastanov (SK) quantum dots. Here and within the framework of the synthesis of archetype InAs/GaAs quantum dot system we have undertaken a systematic study on the evolution of dot facet orientation in terms diffraction characterization by the reflection high-energy electron diffraction (RHEED) technique. The existence of a sharp transition of facet arrangements and shapes near the onset of dot formation is investigated, and a dot structure bound by {2 5 11} facets is proposed. During further calculations, we observed asymmetric ripening of quantum dot facets at initial growth stages, and as the dot ripens, more symmetric facet arrangement to the incident direction was noted. Further, incorporating the correlation between dot structural properties and RHEED intensity features, we propose structures for quantum dots bounded by {1 3 6} and {1 (3 ) ̅5} facets for both asymmetric and symmetric situations. In addition, development of advanced quantum dot structures to fabricate wetting layer separated InAs quantum dots is implemented. Improvement of photoluminescence emission from InAs quantum dots embedded in a GaAs matrix is presented at the end of the work.

Book Epitaxial Growth and Real Time Characterization of Self assembled Quantum Dots Using Reflection High Energy Electron Diffraction

Download or read book Epitaxial Growth and Real Time Characterization of Self assembled Quantum Dots Using Reflection High Energy Electron Diffraction written by Chandani P.K. Rajapaksha and published by . This book was released on 2010 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Epitaxial Growth Part A

Download or read book Epitaxial Growth Part A written by J Matthews and published by Elsevier. This book was released on 2012-12-02 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection contains topics on the historical development of epitaxy, the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The text also provides descriptions of the methods used to prepare and examine thin films and a list of the overgrowth-substrate combinations studied. Mineralogists, materials engineers and scientists, and physicists will find this book a great source of insight.

Book Atomistic Aspects of Epitaxial Growth

Download or read book Atomistic Aspects of Epitaxial Growth written by Miroslav Kotrla and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial growth lies at the heart of a wide range of industrial and technological applications. Recent breakthroughs, experimental and theoretical, allow actual atom-by-atom manipulation and an understanding of such processes, opening up a totally new area of unprecedented nanostructuring. The contributions to Atomistic Aspects of Epitaxial Growth are divided into five main sections, taking the reader from the atomistic details of surface diffusion to the macroscopic description of epitaxial systems. many of the papers contain substantial background material on theoretical and experimental methods, making the book suitable for both graduate students as a supplementary text in a course on epitaxial phenomena, and for professionals in the field.

Book Epitaxial Growth   Principles and Applications  Volume 570

Download or read book Epitaxial Growth Principles and Applications Volume 570 written by Albert-László Barabási and published by . This book was released on 1999-08-26 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Book Photo Assisted Epitaxial Growth for III V Semiconductors

Download or read book Photo Assisted Epitaxial Growth for III V Semiconductors written by and published by . This book was released on 1993 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photo-assisted metalorganic molecular beam epitaxy (MOMBE), with an argon ion laser, has been used to grow GaAs. The substrate temperature was calibrated by an infrared laser interferometric technique with an accuracy of + or - 3 deg C. The MOMBE growth of GaAs, InAs, and InGaAs was first studied, by monitoring intensity oscillations of reflection high-energy electron diffraction (RHEED). The actual arsenic incorporation rate was deduced from As-induced RHEED oscillations, and a unity V/III incorporation ratio could be obtained. In growing InGaAs, indium segregation suppresses the InGaAs growth rate. In laser- assisted MOMBE the enhancement of arsenic desorption with laser irradiation and its effects were observed. The decomposition of triethylgallium and desorption of arsenic compete with each other, resulting in a saturation in the enhanced growth rate in the arsenic-controlled growth regime. The initial growth behavior was also studied by inspecting the details of the RHEED behavior and arsenic surface coverage ... Molecular beam epitaxy, Photo-assisted, Metal-organics gallium arsenide, Indium arsenide, Argon ion laser.

Book Quantum Dot Optoelectronic Devices

Download or read book Quantum Dot Optoelectronic Devices written by Peng Yu and published by Springer Nature. This book was released on 2020-04-16 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book captures cutting-edge research in semiconductor quantum dot devices, discussing preparation methods and properties, and providing a comprehensive overview of their optoelectronic applications. Quantum dots (QDs), with particle sizes in the nanometer range, have unique electronic and optical properties. They have the potential to open an avenue for next-generation optoelectronic methods and devices, such as lasers, biomarker assays, field effect transistors, LEDs, photodetectors, and solar concentrators. By bringing together leaders in the various application areas, this book is both a comprehensive introduction to different kinds of QDs with unique physical properties as well as their preparation routes, and a platform for knowledge sharing and dissemination of the latest advances in a novel area of nanotechnology.

Book Liquid Phase Epitaxial Growth of III V Compound Semiconductor Materials and Their Device Applications

Download or read book Liquid Phase Epitaxial Growth of III V Compound Semiconductor Materials and Their Device Applications written by M. G. Astles and published by CRC Press. This book was released on 1990 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: An introduction to the basic principles of the technique of liquid-phase epitaxy (LPE) as applied to the growth of the III-V family of compounds.

Book Semiconductor Quantum Dots

Download or read book Semiconductor Quantum Dots written by Y. Masumoto and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor quantum dots represent one of the fields of solid state physics that have experienced the greatest progress in the last decade. Recent years have witnessed the discovery of many striking new aspects of the optical response and electronic transport phenomena. This book surveys this progress in the physics, optical spectroscopy and application-oriented research of semiconductor quantum dots. It focuses especially on excitons, multi-excitons, their dynamical relaxation behaviour and their interactions with the surroundings of a semiconductor quantum dot. Recent developments in fabrication techniques are reviewed and potential applications discussed. This book will serve not only as an introductory textbook for graduate students but also as a concise guide for active researchers.

Book Epitaxial Microstructures

Download or read book Epitaxial Microstructures written by and published by Academic Press. This book was released on 1994-09-15 with total page 457 pages. Available in PDF, EPUB and Kindle. Book excerpt: Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures. - Atomic-level control of semiconductor microstructures - Molecular beam epitaxy, metal-organic chemical vapor deposition - Quantum wells and quantum wires - Lasers, photon(IR)detectors, heterostructure transistors

Book Selective area epitaxial growth of iii v semiconductor structures for optoelectronic applications

Download or read book Selective area epitaxial growth of iii v semiconductor structures for optoelectronic applications written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A integração monolítica de um modulador com um guia de onda é de muito interesse para aplicação em comunicações ópticas pelo fato de que podemos diminuir as perdas por acoplamento óptico entre os dois dispositivos e usar moduladores curtos que operem em altas taxas de transmissão de dados. O crescimento epitaxial seletivo é uma das técnicas mais promissoras na atualidade para aplicação na integração monolítica de dispositivos semicondutores. Esta técnica permite controlar a espessura e a tensão das camadas crescidas seletivamente permitindo otimizar a integração e as características das estruturas dos dispositivos. A tese trata da implementação, do estudo e da aplicação do crescimento epitaxial seletivo por MOCVD de estruturas casadas e tensionadas de poços quânticos múltiplos de InGaAs/InAlAs para a fabricação de moduladores de amplitude baseados no efeito Stark e sua integração com guias de onda. O desempenho dos moduladores, baseados em estruturas de poços quânticos múltiplos de InGaAs/InAlAs que operam em 1,55 ym, é notavelmente melhorado quando é introduzida uma composição de 52% de Ga na liga e se tem um poço de ~100 A de espessura. Nesse caso, os moduladores possuem uma elevada figura de mérito e podem ser insensíveis à polarização. Nesse estudo foram crescidas várias amostras onde foi analisado o aumento na taxa de crescimento e a variação na composição das ligas de InGaAs e InAlAs em material bulk e em poços quânticos de InGaAs/InAlAs em função da geometria da máscara utilizada, i.e. diferentes larguras do dielétrico e largura da janela onde ocorre o crescimento fixo. Finalmente foram processados guias de onda cujas estruturas foram crescidas com a técnica de crescimento seletivo. Esses guias foram caracterizados por técnicas de campo próximo.

Book Semiconductor Quantum Dots

Download or read book Semiconductor Quantum Dots written by Ladislaus B nyai and published by World Scientific. This book was released on 1993 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Quantum Dots presents an overview of the background and recent developments in the rapidly growing field of ultrasmall semiconductor microcrystallites, in which the carrier confinement is sufficiently strong to allow only quantized states of the electrons and holes. The main emphasis of this book is the theoretical analysis of the confinement induced modifications of the optical and electronic properties of quantum dots in comparison with extended materials. The book develops the theoretical background material for the analysis of carrier quantum-confinement effects, introduces the different confinement regimes for relative or center-of-mass motion quantization of the electron-hole-pairs, and gives an overview of the best approximation schemes for each regime. A detailed discussion of the carrier states in quantum dots is presented and surface polarization instabilities are analyzed, leading to the self-trapping of carriers near the surface of the dots. The influence of spin-orbit coupling on the quantum-confined carrier states is discussed. The linear and nonlinear optical properties of small and large quantum dots are studied in detail and the influence of the quantum-dot size distribution in many realistic samples is outlined. Phonons in quantum dots as well as the influence of external electric or magnetic fields are also discussed. Last but not least the recent developments dealing with regular systems of quantum dots are also reviewed. All things included, this is an important piece of work on semiconductor quantum dots not to be dismissed by serious researchers and physicists.

Book Morphological Organization In Epitaxial Growth And Removal

Download or read book Morphological Organization In Epitaxial Growth And Removal written by Max G Lagally and published by World Scientific. This book was released on 1999-01-29 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a critical assessment of the current status and the likely future directions of thin-film growth, an area of exceptional technological importance. Its emphasis is on descriptions of the atomic-scale mechanisms controlling the dynamics and thermodynamics of the morphological evolution of the growth front of thin films in diverse systems of fundamental and technological significance. The book covers most of the original and important conceptual developments made in the 1990s. The articles, written by leading experts, are arranged in five major categories — the theoretical basis, semiconductor-on-semiconductor growth, metal-on-metal growth, metal-on-semiconductor growth, and removal as the inverse process of growth. This book, the only one of its kind in this decade, will prove to be an indispensable reference source for active researchers, those having peripheral interest, and graduate students starting out in the field.

Book Semiconductor Quantum Dots II  Volume 642

Download or read book Semiconductor Quantum Dots II Volume 642 written by Rosa Leon and published by . This book was released on 2001-11-09 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.