Download or read book Electrothermal Harmonic Balance Simulation of an INGAP GAAS HBT Based on 3D Thermal and Semiconductor Transport Models written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A parallel implementation of the direct coupling of InGaP/GaAs HBT transport equations has been included in an Harmonic Balance simulator. Several results such as a class AB amplifier for mobile communication study and a stability analysis of "crunch effect" in multi-finger HBT have been performed.
Download or read book ITherm 2002 written by Cristina H. Amon and published by . This book was released on 2002 with total page 1148 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ITHERM written by and published by . This book was released on 2004 with total page 798 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transient Electro Thermal Modeling on Power Semiconductor Devices written by Tanya Kirilova Gachovska and published by Springer Nature. This book was released on 2022-06-01 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device.
Download or read book Self consistent Fully Dynamic Electro thermal Simulation of Power HBTS written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A new self-consistent dynamic electro-thermal model for power HBTs is presented coupling a circuit-oriented electricalmodel, fitted on experimental data, with a full frequency domain thermal model. The thermal model provides the exact frequency behaviour of the device thermal impedance through a quasi-3D approach. The electro-thermal self-consistent solution is achieved, in large-signal periodic operation, through Harmonic Balance analysis. The model has been applied to the simulation of some HBT layouts from Alenia Marconi Systems.
Download or read book 2003 IEEE Conference on Electron Devices and Solid State Circuits written by and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 2003 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings from the 2003 IEEE Conference on Electron Devices and Solid-State Circuits.
Download or read book Transient Electro Thermal Modeling of Bipolar Power Semiconductor Devices written by Tanya Kirilova Gachovska and published by Morgan & Claypool. This book was released on 2013-11 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models. The instantaneous dissipated power, calculated using the electrical device models, serves as input to the thermal model (RC network with constant and nonconstant thermal resistance and thermal heat capacity, or Fourier thermal model) of the entire module or package, which computes the junction temperature of the device. Once an updated junction temperature is calculated, the temperature-dependent semiconductor material parameters are re-calculated and used with the device electrical model in the next time-step of the simulation. The physics-based electro-thermal models can be used for optimizing device and package design and also for validating extracted parameters of the devices. The thermal model can be used alone for monitoring the junction temperature of a power semiconductor device, and the resulting simulation results used as an indicator of the health and reliability of the semiconductor power device. Table of Contents: Nomenclature / Temperature Dependencies of Material and Device Parameters / One-Dimensional Thermal Model / Realization of Power IGBT and Diode Thermal Model / References / Authors' Biographies
Download or read book A Direct Coupling Between the Semiconductor Equations Describing a GaInP GaAs HBT in a Circuit Simulator for the Co design of Microwave Devices and Circuits written by and published by . This book was released on 1909 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper describes the direct coupling between a physical device simulator and a circuit simulator based on the Harmonic Balance (Hit) technique. The semiconductor device equations adopted concern a GaInP/GaAs HBT for power applications. A full computation of the Jacobian matrix for convergence improvement has been implemented. It provides us with a powerful tool for the codesign of devices and circuits which has been successfully tested to simulate the power transfer characteristic of a device operating in class AB,
Download or read book Package Electrical Modeling Thermal Modeling and Processing for GaAs Wireless Applications written by Dean L. Monthei and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 233 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the practical aspects of electrical and thermal modeling of packages. In addition, processing concerns for plastic packaged GaAs parts are also covered. The book emphasizes low cost industry standard packages. However, the principles involved translate well to other categories of packages. Digital issues such as crosstalk are well documented in other books and are therefore not covered in detail in this text. The principles for generation of equivalent circuit package models applies to both digital and analog parts. Digital designers and packaging engineers should still find this text useful. Subtleties often overlooked by standard methods of modeling packages for digital applications are considered and will become more important to the digital packaging engineer as frequencies continue to increase. It is hoped this book will be useful to both microwave and digital integrated circuit (Ie) designers as well as packaging engineers. In the past these disciplines were distinct. Packaging engineers typically were concerned with only materials and mechanical issues of the package. As long as there was an electrical connection made from the die to the external pin, packaging engineers had the freedom to do anything they wanted between these two points. At high frequency the issues change. Packaging engineers now have to work with die level designers to either create a package that performs well at high frequencies or to use readily available low cost packages that happen to meet the needs of the application.
Download or read book Thermal Design and Characterization of Heterogeneously Integrated InGaP GaAs HBTs written by and published by . This book was released on 2016 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: Flip-chip heterogeneously integrated n-p-n InGaP/GaAs heterojunction bipolar transistors (HBTs) with integrated thermal management on wide-bandgap AlN substrates followed by GaAs substrate removal are demonstrated. Without thermal management, substrate removal after integration significantly aggravates self-heating effects, causing poor I-V characteristics due to excessive device self-heating. An electrothermal codesign scheme is demonstrated that involves simulation (design), thermal characterization, fabrication, and evaluation. Thermoreflectance thermal imaging, electrical-temperature sensitive parameter-based thermometry, and infrared thermography were utilized to assess the junction temperature rise in HBTs under diverse configurations. In order to reduce the thermal resistance of integrated devices, passive cooling schemes assisted by structural modification, i.e., positioning indium bump heat sinks between the devices and the carrier, were employed. By implementing thermal heat sinks in close proximity to the active region of flip-chip integrated HBTs, the junction-to-baseplate thermal resistance was reduced over a factor of two, as revealed by junction temperature measurements and improvement of electrical performance. In conclusion, the suggested heterogeneous integration method accounts for not only electrical but also thermal requirements providing insight into realization of advanced and robust III-V/Si heterogeneously integrated electronics.
Download or read book Physics based Modeling and Characterization of InGaP HBTs written by Sergey Cherepko and published by . This book was released on 2003 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt: A physics-based approach to the compact modeling of GaAs-based and InP-based HBTs is described. Detailed analysis of device operation and topology is utilized in order to include physical effects that are specific to the AlGaAs/GaAs HBTs, InGaP/GaAs HBTs, InP/InGaAs HBTs and at the same time to avoid modeling effects that are not relevant. Among the effects incorporated into the model are self-heating, base push-out (Kirk effect), non-trivial bias dependence of transit times and depletion capacitances, base-collector diffusion charge in saturation and quasi-saturation, non-quasi-static effects in both base and collector regions. It is shown that the non-quasi-static effects can be naturally added to the quasi-static model without further complicating equivalent circuit topology. The result is a concise but capable large-signal compact model together with a clear and practical extraction procedure for model parameters. The model is designed to be compatible with the majority of the today's industry-standard compact BJT models (VBIC, MEXTRAM, HICUM, UCSD). This allows simple mapping of the proposed model into any of the industry-standard ones hence alleviating problems associated with implementation of a user-defined model. An example of conversion into the VBIC model is also presented.
Download or read book Scalable Large Signal Modeling of InGaP GaAs HBT for CAD Tools written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A new HBT current source model and the corresponding direct parameter extraction methods are presented. Exact analytical expressions for the current source model parameter are derived. This method is applied to scalable modeling of HBT. Some techniques to reduce redundancy of the parameters are introduced. The model based on this method can accurately predict the measured data for the change of ambient temperature, size, and bias.
Download or read book General Electrothermal Semiconductor Device Simulation written by Kevin Kells and published by . This book was released on 1994 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents a robost implementation of an electrothermal model for computer simulation of semiconductor devces. The ability to predict electrothermal effects using computer simulation methods has become paramount to microsensor design as well as estimation of maximum power handling capability, short circuit behavior, etc. in power devices. The author presents the background for the electrothermal model and its implementation in the program Simul, as well as its application to power devices such as the p-i-n diode and the IGBT"--Back cover.
Download or read book Electro thermal Characterizations Compact Modeling and TCAD Based Device Simulations of Advanced SiGe written by Amit Kumar Sahoo and published by . This book was released on 2012 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extensive evaluation of different techniques for transient and dynamic electro-thermal behavior of microwave SiGe:C BiCMOS hetero-junction bipolar transistors (HBT) and nano-scale metal-oxide-semiconductor field-effect transistors (MOSFETs) have been presented. In particular, new and simple approach to accurately characterize the transient self-heating effect, based on pulse measurements, is demonstrated. The methodology is verified by static measurements at different ambient temperatures, s-parameter measurements at low frequency region and transient thermal simulations. Three dimensional thermal TCAD simulations are performed on different geometries of the submicron SiGe:C BiCMOS HBTs with fT and fmax of 230 GHz and 290 GHz, respectively. A comprehensive evaluation of device self-heating in time and frequency domain has been investigated. A generalized expression for the frequency-domain thermal impedance has been formulated and that is used to extract device thermal impedance below thermal cut-off frequency. The thermal parameters are extracted through transistor compact model simulations connecting electro-thermal network at temperature node. Theoretical works for thermal impedance modeling using different networks, developed until date, have been verified with our experimental results. We report for the first time the experimental verification of the distributed electrothermal model for thermal impedance using a nodal and recursive network. It has been shown that, the conventional single pole thermal network is not sufficient to accurately model the transient thermal spreading behavior and therefore a recursive network needs to be used. Recursive network is verified with device simulations as well as measurements and found to be in excellent agreement. Therefore, finally a scalable electro-thermal model using this recursive network is developed. The scalability has been verified through numerical simulations as well as by low frequency measurements and excellent conformity has been found in for various device geometries.
Download or read book Spice Thermal Subcircuit of Multifinger HBT Derived from Ritz Vector Reduction Technique of 3D Thermal Simulation for Electrothermal Modeling written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper deals with the integration of a reduced thermal model based on tree dimensional Finite Element (FE) thermal simulation into circuit simulator for accurate prediction of electrothermal behavior of power devices. The reduced thermal model based on the Ritz vectors approach is easily usable in any kind of circuit simulator because it is described by a spice format subcircuit. The model has been successfully experimented with the ADS simulator. Electrical based thermal measurements of transient temperature response have successfully validated our approach.
Download or read book A Compact Semi physically Based Model Predicts Accurate Aower and Linearity of Power InGaP HBTs written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A compact and robust InGaP-GaAs HBT model has been developed for accurate large-signal and linearity simulations. In addition to self-heating, the model takes into account the non-quasi-static charge effects, which include collector mobile charge effects, collector transit time effects, and other dynamic charge effects. The new model, in contrast to conventional HBT models, predicts very well the large gain expansion at class AB operation and also the distortion, such as IP3, at various harmonic load conditions. The model is semi-physically based and, therefore, can be used to assess the effects of physical parameters on linearity, such as collector doping.
Download or read book A Unified Electrothermal Hot carrier Transport Model for Silicon Bipolar Transistor Simulations written by Yuen Po S. Szeto and published by . This book was released on 1989 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:
