Download or read book Electronic Structure of Deep Defects in Hydrogenated Amorphous Silicon written by Fan Zhong and published by . This book was released on 1994 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Hydrogenated Amorphous Silicon written by H. Neber-Aeschbacher and published by Trans Tech Publications Ltd. This book was released on 1995-07-07 with total page 1080 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ever since the work of W.E. Spear and P.G. LeComber had proved that an amorphous semiconductor could indeed also be substitutionally doped, research in the respective field has seen an nearly unprecedented development. The role of hydrogen in atomic and electronic structure as well as in the doping mechanism remains an outstanding problem addressed both to theoreticians and experimentalists, and a highly interesting challenge both to the scientist as well as the engineer.
Download or read book Studies on Relative Effects of Charged and Neutral Defects in Hydrogenated Amorphous Silicon written by and published by . This book was released on 1992 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report covers the third year of a continuing research study to understand the relative importance of charged and neutral defects in amorphous silicon. The objective of the study is to explore the electronic structure, including neutral and charged defects, an optoelectronic effects including the formation of Staebler-Wronski defects. The study concentrated on exploring electroluminescence experimentally and interpreting the results employing a simple guiding model. The simple guiding model assumes an exponential density of states and recombination rate constants (radiative and non-radiative) which are governed by hopping transitions. Measurements were also made as a function of photodegradation of the material. The results implicate that the radiative recombination processes are not distant pair tunneling but rather results from electrons hopping down due to the coulomb interactions. Preliminary experiments have been made on the effect of photodegradation on transient space charge limited currents in n/i/n structures. These experiments can directly yield information on the occupied defects centers induced by the photodegradation and are not a result of recombination processes. To date the results seems to be consistent with a picture which places the doubly occupied defects at quite a high energy ({approx equal} 0.4 e.v. below the conduction band).
Download or read book The Physics of Hydrogenated Amorphous Silicon I written by J.D. Joannopoulos and published by Springer. This book was released on 1984-06-01 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: With contributions by numerous experts
Download or read book The Physics of Hydrogenated Amorphous Silicon II written by J.D. Joannopoulos and published by Springer Science & Business Media. This book was released on 2008-02-29 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: With contributions by numerous experts
Download or read book Studies on Relative Effects of Charged and Neutral Defects in Hydrogenated Amorphous Silicon Final Report 1 October 1989 31 December 1990 written by and published by . This book was released on 1992 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report covers the third year of a continuing research study to understand the relative importance of charged and neutral defects in amorphous silicon. The objective of the study is to explore the electronic structure, including neutral and charged defects, an optoelectronic effects including the formation of Staebler-Wronski defects. The study concentrated on exploring electroluminescence experimentally and interpreting the results employing a simple guiding model. The simple guiding model assumes an exponential density of states and recombination rate constants (radiative and non-radiative) which are governed by hopping transitions. Measurements were also made as a function of photodegradation of the material. The results implicate that the radiative recombination processes are not distant pair tunneling but rather results from electrons hopping down due to the coulomb interactions. Preliminary experiments have been made on the effect of photodegradation on transient space charge limited currents in n/i/n structures. These experiments can directly yield information on the occupied defects centers induced by the photodegradation and are not a result of recombination processes. To date the results seems to be consistent with a picture which places the doubly occupied defects at quite a high energy ((asymptotically equal to) 0.4 e.v. below the conduction band).
Download or read book Light Induced Defects in Semiconductors written by Kazuo Morigaki and published by CRC Press. This book was released on 2014-09-13 with total page 213 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications.
Download or read book Materials Science and Technology Electronic Structure and Properties of Semiconductors written by Wolfgang Schröter and published by Wiley-VCH. This book was released on 1996-12-16 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Materials Science and Technology A Comprehensive Treatment Edited by R.W. Cahn, P. Haasen, E.J. Kramer The 18-volume series ‘Materials Science and Technology’ is the first in-depth, topic-oriented reference work devoted to this growing interdisciplinary field. A compendium of current, state-of-the-art information, it covers the most important classes of materials: metals, ceramics, glasses, polymers, semiconductors, and composites, from the fundamentals of perfect semiconductors via the physics of defects, to "artifical" and amorphous semiconductors. Edited by internationally renowned figures in materials science, this series is sure to establish itself as a seminal work. Volume 4: This volume spans the field of semiconductor physics, with particular emphasis on concepts relevant to semiconductor technology. Topics included are: band theory applied to semiconductors • optical properties and charge transport • intrinsic point defects in semiconductors • deep centers in semiconductors • equilibria, nonequilibria, diffusion, and precipitation • dislocations • grain boundaries in semiconductors • interfaces • the hall effect in quantum wires • material properties of hydrogenated amorphous silicon • high-temperature properties of three-dimensional transition elements in silicon.
Download or read book Hydrogen in Semiconductors written by Jacques I. Pankove and published by Academic Press. This book was released on 1991-04-23 with total page 655 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference
Download or read book Structure and Electronic Studies of Defects in Amorphous Silicon written by R. A. Street and published by . This book was released on 1982 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects in Tetrahedrally Coordinated Amorphous Semiconductors written by P. C. Taylor and published by . This book was released on 1985 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the tetrahedrally coordinated amorphous semiconductors the dominant defects deep in the gap are attributed to dangling bonds on the group IV atoms. These defects are commonly thought to have effective electron-electron correlation energies Ueff which are positive, although some tight-binding estimates suggest negative Ueff. Defect states near the band gap edges are invoked to account for many experimental results including the usual appearance of an Urbach absorption edge. These shallow defect states are usually attributed to strained bonds but two-fold-coordinated group IV atoms have also been suggested. The application of light of near-band-gap energies alters the density of paramagnetic dangling bonds. For large spin densities (n(s) greater than or equal to 10 to the 17th power per cu cm) this increase is probably due to the creation of new defects, but it is possible that at lower densities (n(s) less than or equal to 10 to the 16th power per cu cm) the rearrangement of electronic charge in existing defects is important. Impurities also contribute to the defects observed in tetrahedral amorphous semiconductors. Particular species include trapped atomic and molecular hydrogen, trapped NO-2 molecules, singly-coordinated oxygen atoms and E' centers. Keywords include: Hydrogenated amorphous silicon, Amorphous silicon alloys, Defects, States in the gap, and Impurities.
Download or read book Amorphous Silicon and Related Materials written by Hellmut Fritzsche and published by World Scientific. This book was released on 1989-01-01 with total page 742 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related materials. Each contribution is authored by an outstanding expert in that particular area.
Download or read book The Materials Science of Semiconductors written by Angus Rockett and published by Springer Science & Business Media. This book was released on 2007-11-20 with total page 629 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes semiconductors from a materials science perspective rather than from condensed matter physics or electrical engineering viewpoints. It includes discussion of current approaches to organic materials for electronic devices. It further describes the fundamental aspects of thin film nucleation and growth, and the most common physical and chemical vapor deposition techniques. Examples of the application of the concepts in each chapter to specific problems or situations are included, along with recommended readings and homework problems.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1995 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1992 with total page 820 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Transport and the Electronic Structure of Hydrogenated Amorphous Silicon written by M. Silver and published by . This book was released on 1986 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book ERDA Energy Research Abstracts written by and published by . This book was released on 1985 with total page 676 pages. Available in PDF, EPUB and Kindle. Book excerpt:
