Download or read book Electronic Characterization of Defects in Narrow Gap Semiconductors written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-07-06 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of point defects in semiconductors has a long and honorable history. In particular, the detailed understanding of shallow defects in common semiconductors traces back to the classic work of Kohn and Luttinger. However, the study of defects in narrow gap semiconductors represents a much less clear story. Here, both shallow defects (caused by long range potentials) and deep defects (from short range potentials) are far from being completely understood. In this study, all results are calculational and our focus is on the chemical trend of deep levels in narrow gap semiconductors. We study substitutional (including antisite), interstitial and ideal vacancy defects. For substitutional and interstitial impurities, the efects of relaxation are included. For materials like Hg(1-x)Cd(x)Te, we study how the deep levels vary with x, of particular interest is what substitutional and interstitial atoms yield energy levels in the gap i.e. actually produce deep ionized levels. Also, since the main technique utilized is Green's functions, we include some summary of that method. Patterson, James D. Unspecified Center...

Download or read book Electronic Characterization of Defects in Narrow Gap Semiconductors written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-07-06 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: The project has evolved to that of using Green's functions to predict properties of deep defects in narrow gap materials. Deep defects are now defined as originating from short range potentials and are often located near the middle of the energy gap. They are important because they affect the lifetime of charge carriers and hence the switching time of transistors. We are now moving into the arena of predicting formation energies of deep defects. This will also allow us to make predictions about the relative concentrations of the defects that could be expected at a given temperature. The narrow gap materials mercury cadmium telluride (MCT), mercury zinc telluride (MZT), and mercury zinc selenide (MZS) are of interest to NASA because they have commercial value for infrared detecting materials, and because there is a good possibility that they can be grown better in a microgravity environment. The uniform growth of these crystals on earth is difficult because of convection (caused by solute depletion just ahead of the growing interface, and also due to thermal gradients). In general it is very difficult to grow crystals with both radial and axial homogeneity. Patterson, James D. and Li, Wei-Gang Unspecified Center...

Download or read book Effect of Disorder and Defects in Ion Implanted Semiconductors Optical and Photothermal Characterization written by and published by Academic Press. This book was released on 1997-06-12 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical, physical, and optical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Download or read book Device Physics of Narrow Gap Semiconductors written by Junhao Chu and published by Springer Science & Business Media. This book was released on 2009-10-13 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt: Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The final chapter describes the device physics of photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.

Download or read book Physics and Properties of Narrow Gap Semiconductors written by Junhao Chu and published by Springer. This book was released on 2010-11-29 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. They often operate at the extremes of the rules of semiconductor science. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Topics covered include band structure, optical and transport properties, and lattice vibrations and spectra. A thorough treatment of the properties of low-dimensional systems and their relation to infrared applications is provided.

Download or read book Defect Structure and Transport Properties of Narrow Gap Semiconductor PbTe and Related Systems written by Salameh M. Ahmad and published by . This book was released on 2007 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2007-04-12 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Download or read book Narrow Gap Semiconductors 1995 written by J.L Reno and published by CRC Press. This book was released on 2020-11-25 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.

Download or read book Atomic Scale Characterization of Point Defects in the Ultra wide Band Gap Semiconductor beta ga2o3 written by Jared Michael Johnson and published by . This book was released on 2020 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt: Precisely controlled point defects are vital to the manipulation of important electronic properties in semiconductor materials. Point defects and their complexes display a wide range of atomic structures and functional states that critically influence a semiconductor’s unique properties. Therefore, gaining insight on the exact nature of their formation and role in determining properties is key to advancing these materials for application. This type of characterization requires obtaining experimental information on the atomic scale structure of point defects.

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Monthly Catalog of United States Government Publications written by and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Monthly Catalogue United States Public Documents written by and published by . This book was released on 1995 with total page 1638 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterisation and Control of Defects in Semiconductors written by Filip Tuomisto and published by Materials, Circuits and Device. This book was released on 2019-10-27 with total page 601 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an up-to-date review of the experimental and theoretical methods used for studying defects in semiconductors, this book focuses on recent developments driven by the requirements of new materials, including nitrides, oxide semiconductors and 2-D semiconductors.

Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors

Download or read book Characterization of Trapping States in Semiconductors written by Harvey Small Hopkins and published by . This book was released on 1981 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect energy states within the band gap are known to affect the performance of semiconductors in terms of response time. The characterization of defects is the first step in understanding how they act and how one may use them to benefit diode performance. Characterization of a defect includes among other quantities, the energy difference from the band edge, and the capture cross section of the energy state. Deep Level Transient Spectroscopy (DLTS) is a very powerful experimental method using the transient capacitance properties reverse-biased p-n junction diodes to characterize defects. A particular electron trap in n-type GaAlAs, known as the DX center is studied in this report using two different DLTS experimental setups. A complex model is proposed for the DX center consisting of a group plus an excited state with independent capture cross sections and communication between the two levels. Since classical analysis of DLTS data yields misleading results when a complex trap is considered, a computer simulation and curve fitting technique was used to determine the trap structure and parameters. This technique gave values of .295 eV for the ground state energy, .219 eV for the excited state, prefactor values on the ground, excited, and communication prefactor of 1.02 x 10 to the 7th, 2.2 x 10 to the 8th and 5.58 x 10 to the 5th, respectively. (Author).

Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Download or read book Defect Recognition and Image Processing in Semiconductors 1997 written by J. Doneker and published by Routledge. This book was released on 2017-11-22 with total page 746 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.