Download or read book Dislocation Arrangements in 4H SiC and Their Influence on the Local Crystal Lattice Properties written by and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Two wafers of one 4H-silicon carbide (4H-SiC) bulk crystal, one cut from a longitudinal position close to the crystal's seed and the other close to the cap, were characterized with synchrotron white-beam X-ray topography (SWXRT) in back-reflection and transmission geometry to investigate the dislocation formation and propagation during growth. For the first time, full wafer mappings were recorded in 00012 back-reflection geometry with a CCD camera system, providing an overview of the dislocation arrangement in terms of dislocation type, density and homogeneous distribution. Furthermore, by having similar resolution to conventional SWXRT photographic film, the method enables identification of individual dislocations, even single threading screw dislocations, which appear as white spots with a diameter in the range of 10 to 30 μm. Both investigated wafers showed a similar dislocation arrangement, suggesting a constant propagation of dislocations during crystal growth. A systematic investigation of crystal lattice strain and tilt at selected wafer areas with different dislocation arrangements was achieved with high-resolution X-ray diffractometry reciprocal-space map (RSM) measurements in the symmetric 0004 reflection. It was shown that the diffracted intensity distribution of the RSM for different dislocation arrangements depends on the locally predominant dislocation type and density. Moreover, the orientation of specific dislocation types along the RSM scanning direction has a strong influence on the local crystal lattice properties

Download or read book Global Defect Distribution and Their Influence on the Local Real Structure of 4H SiC written by Melissa Roder and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: In this work 4H-SiC, grown by Physical Vapor Transport (PVT) was investigated with Synchrotron White Beam X-ray Topography (SWXRT) in back-reflection geometry, section topography, X-ray Diffraction Laminography (XDL), polarized light microscopy and at last High Resolution X-ray Diffractometry (HRXRD). Full SWXRT back-reflection wafer-mappings were recorded giving a good dislocation overview. The observed defect features - verified with SWXRT - include threading dislocations like Threading Screw Dislocations (TSDs), superscrews like Micropipes (MPs), dislocation networks in form of Basal Plane Dislocations (BPDs) and Small-Angle-Grain- Boundaries (SAGBs) in different portions. The dislocations are inhomogeneously distributed and show global wafer areas of the same principal dislocation arrangement and density which do not change in growth direction, but there are local defect differences visible within the areas in growth direction. Furthermore, there are features on the topographs which cannot be assigned to the diffraction pattern of a specific dislocation type. They appear as large, shapeless white spot which was assigned to either a void, different polytype, differently oriented grain or an arrangement of closely spaced MPs with the complementary results of polarization microscopy. MPs and other comparable threading dislocations assumed to lie approximately parallel to growth direction [0001] with solely a small but constant inclination arising from an edge component was shown to be incomplete. Polarization microscopy Z-stacks of different MPs reveal strong individual fluctuations of propagation direction and inclination angle in the mm range. XDL showed furthermore a differently pronounced strain field around the MP's core in accordance to the tilt component. Section topography showed that different dislocation types and densities leading to a local difference of section border bowing and orientation contrast arising Delta Theta extensions. Those differences are in accordance with the different global wafer regions shown in the wafer-mappings. For the real structural analysis, High Resolution X-ray Diffractometry (HRXRD) measurements were performed on several wafer areas representing different dislocation types, densities and their interactions. Bond measurements verified a local lattice parameter difference in dependence of the dislocation content. It turned out that SAGBs show the biggest influence on the lattice parameter in c, whereas MPs leading to the least deviation. Reciprocal Space Maps (RSM) show a difference in the crystal lattice strain and tilt conditions depending not only on the dominant dislocation type but also on the rocking direction along different preferential directions of dislocations. It was shown, that MPs with the least inclination towards growth direction leading to a separation into several strain and tilt segments

Download or read book Crystal Dislocations Their Impact on Physical Properties of Crystals written by Peter Lagerlof and published by MDPI. This book was released on 2019-01-09 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a printed edition of the Special Issue "Crystal Dislocations: Their Impact on Physical Properties of Crystals" that was published in Crystals

Download or read book Crystal Dislocations Their Impact on Physical Properties of Crystals written by Peter Lagerlof and published by . This book was released on 2018 with total page 1 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proposed existence of the edge and screw dislocation in the 1930s, and the subsequent work showing that dislocation theory could explain the plastic deformation of crystals, represent an important step in developing our understanding of materials into a science. The continued work involved with characterization of dislocations and linking them to a variety of physical properties in both single and poly crystals have made enormous progress over the past 50 years. It is rare to find a technical application involving a material with any crystal structure that is not impacted by dislocations; mechanical properties, massive phase transformations, interphases, crystal growth, electronic properties, the list goes on. In many systems the properties is controlled by the formation of partial dislocations separated by a stacking fault; for example plastic deformation via deformation twinning. And finally, giant strides have been made in characterization and modeling of systems containing dislocations. The Special Issue on “Crystal Dislocations” is intended to provide a unique international forum aimed at covering a broad range of results involving dislocations and their importance on crystal properties and crystal growth. Scientists working in a wide range of disciplines are invited to contribute to this cause.Dr. K. Peter D. Lagerlof, Associate Professor of CeramicsGuest Editor

Download or read book Dislocations and Properties of Real Materials written by Metals Society. Metal Science Committee and published by Ashgate Publishing. This book was released on 1985 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Theory of Crystal Dislocations written by Sir Alan Howard Cottrell and published by Routledge. This book was released on 1964 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Defects in SiC Single Crystals and Their Influence on Device Performance written by and published by . This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project constituted an extensive program of research aimed at applying the techniques of Synchrotron White Beam X-ray Topography (SWBXT), Nomarski Optical Microscopy, Stereo Transmission Optical Microscopy and Scanning Electron Microscopy to the detailed analysis of defect structures in SiC crystals of various polytypes, and to determine how these defect structures can influence the performance of various kinds of device manufactured therein. It has served to establish a heightened awareness of the importance of a detailed understanding of growth defect microstructure to the future of SiC technology. Results obtained in this project have helped prioritize SiC crystal quality improvements. Two kinds of defect have been identified in 6H and 4H-SiC, basal plane dislocations, and dislocations with mostly screw component lying either at a small angle, or parallel, to the c-axis, with screw component of Burgers vector being equal to nc, where c is the lattice parameter. In 6H, dislocations with b greater than or equal 2c have hollow cores, the diameters of which conform to the theory of F.C. Frank. The same is true for dislocations in 4H with b greater than equal 3c. Preliminary results show that all such dislocations (from n=1 to n>8) can modify the I-V characteristics of diodes, giving rise to higher leakage currents and premature breakdown point-failures.

Download or read book Theory of Crystal Dislocations written by Frank Reginald Nunes Nabarro and published by . This book was released on 1987 with total page 856 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dislocation Dynamics and Mechanical Properties of Crystals written by Edward Nadgornyi and published by Elsevier Science & Technology. This book was released on 1988 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Springer Handbook of Crystal Growth written by Govindhan Dhanaraj and published by Springer Science & Business Media. This book was released on 2010-10-20 with total page 1823 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.

Download or read book Wide Energy Bandgap Electronic Devices written by Fan Ren and published by World Scientific. This book was released on 2003 with total page 530 pages. Available in PDF, EPUB and Kindle. Book excerpt: A presentation of state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, rf base station infrastructure and high temperature electronics. It includes results on InGaAsN devices, which constitute a very promising area for low power electronics.

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2018 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microprobe Characterization of Optoelectronic Materials written by Juan Jimenez and published by CRC Press. This book was released on 2024-11-01 with total page 731 pages. Available in PDF, EPUB and Kindle. Book excerpt: Each chapter in this book is written by a group of leading experts in one particular type of microprobe technique. They emphasize the ability of that technique to provide information about small structures (i.e. quantum dots, quantum lines), microscopic defects, strain, layer composition, and its usefulness as diagnostic technique for device degradation. Different types of probes are considered (electrons, photons and tips) and different microscopies (optical, electron microscopy and tunneling). It is an ideal reference for post-graduate and experienced researchers, as well as for crystal growers and optoelectronic device makers.

Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.

Download or read book Properties and Applications of Silicon Carbide written by Rosario Gerhardt and published by BoD – Books on Demand. This book was released on 2011-04-04 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, we explore an eclectic mix of articles that highlight some new potential applications of SiC and different ways to achieve specific properties. Some articles describe well-established processing methods, while others highlight phase equilibria or machining methods. A resurgence of interest in the structural arena is evident, while new ways to utilize the interesting electromagnetic properties of SiC continue to increase.

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.