Download or read book Design of CMOS Tunable Band notch Low noise Amplifier for DS UWB Wireless RF Receiver written by and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design of CMOS RFIC Ultra Wideband Impulse Transmitters and Receivers written by Cam Nguyen and published by Springer. This book was released on 2017-03-21 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the design of ultra-wideband (UWB) impulse-based transmitter and receiver frontends, operating within the 3.1-10.6 GHz frequency band, using CMOS radio-frequency integrated-circuits (RFICs). CMOS RFICs are small, cheap, low power devices, better suited for direct integration with digital ICs as compared to those using III-V compound semiconductor devices. CMOS RFICs are thus very attractive for RF systems and, in fact, the principal choice for commercial wireless markets. The book comprises seven chapters. The first chapter gives an introduction to UWB technology and outlines its suitability for high resolution sensing and high-rate, short-range ad-hoc networking and communications. The second chapter provides the basics of CMOS RFICs needed for the design of the UWB RFIC transmitter and receiver presented in this book. It includes the design fundamentals, lumped and distributed elements for RFIC, layout, post-layout simulation, and measurement. The third chapter discusses the basics of UWB systems including UWB advantages and applications, signals, basic modulations, transmitter and receiver frontends, and antennas. The fourth chapter addresses the design of UWB transmitters including an overview of basic components, design of pulse generator, BPSK modulator design, and design of a UWB tunable transmitter. Chapter 5 presents the design of UWB receivers including the design of UWB low-noise amplifiers, correlators, and a UWB 1 receiver. Chapter 6 covers the design of a UWB uniplanar antenna. Finally, a summary and conclusion is given in Chapter 7.
Download or read book Radio Frequency RF Complementary Metal oxide Semiconductor CMOS Ultra Wideband UWB Transmitter and Receiver Front end Design written by Meng Miao and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The low-cost low-power complementary metal-oxide semiconductor (CMOS) ultra wideband (UWB) transmitter and receiver front-ends based on impulse technology were developed. The CMOS UWB pulse generator with frequency-band tuning capability was developed, which can generate both impulse and monocycle pulse signals with variable pulse durations. The pulse generator integrates a tuning delay circuit, a square-wave generator, an impulse-forming circuit, and a pulse-shaping circuit in a single chip. When integrated with the binary phase shift keying (BPSK) modulator, the transmitter front-end can generate a positive impulse with 0.8 V, negative impulse with 0.7 V, as well as the positive/negative monocycle pulse with 0.6 -- 0.8 V, all with tunable pulse durations. The UWB receiver front-end including the template pulse generator, low noise amplifier (LNA), and multiplier was developed. The cascoded common-source inductively degenerated LNA, with extended ultra-wideband ladder matching network, as well as shunt-peaking topology, was selected to form the impulse-type UWB LNA. The structure-optimized and patterned ground shield (PGS) inductors were also studied and used in LNA design to improve the LNA performance. The maximum gain of 12.4 dB was achieved over the band. For the 3-dB bandwidth, 2.6 -- 9.8 GHz was achieved. The average noise figure of 5.8 dB was achieved over the entire UWB band of 3.1-10.6 GHz. The UWB multiplier based on the transconductor multiplier structure was investigated, with the shunt-peaking topology applied to achieve the pole-zero cancellation and extend the multiplier bandwidth from 2 GHz to 10 GHz. A low-cost, compact, easy-to-manufacture coplanar UWB antenna was developed that is omni-directional, radiation-efficient and has a stable UWB response. It covers the entire UWB frequency range of 3.1 - 10.6 GHz, with the return loss better than 18-dB. This novel uniplanar antenna was integrated with the developed CMOS tunable pulse generator to form the UWB transmitter front-end module. This UWB module can transmit the monocycle pulses and the signals having shape similar to the first derivative of the monocycle pulses, all with the tunable pulse durations. The proposed UWB front-ends have the potential application in short-range communication, GPR, and short-range detections.
Download or read book LNA ESD Co Design for Fully Integrated CMOS Wireless Receivers written by Paul Leroux and published by Springer Science & Business Media. This book was released on 2006-03-30 with total page 199 pages. Available in PDF, EPUB and Kindle. Book excerpt: LNA-ESD Co-Design for Fully Integrated CMOS Wireless Receivers fits in the quest for complete CMOS integration of wireless receiver front-ends. With a combined discussion of both RF and ESD performance, it tackles one of the final obstacles on the road to CMOS integration. The book is conceived as a design guide for those actively involved in the design of CMOS wireless receivers. The book starts with a comprehensive introduction to the performance requirements of low-noise amplifiers in wireless receivers. Several popular topologies are explained and compared with respect to future technology and frequency scaling. The ESD requirements are introduced and related to the state-of-the-art protection devices and circuits. LNA-ESD Co-Design for Fully Integrated CMOS Wireless Receivers provides an extensive theoretical treatment of the performance of CMOS low-noise amplifiers in the presence of ESD-protection circuitry. The influence of the ESD-protection parasitics on noise figure, gain, linearity, and matching are investigated. Several RF-ESD co-design solutions are discussed allowing both high RF-performance and good ESD-immunity for frequencies up to and beyond 5 GHz. Special attention is also paid to the layout of both active and passive components. LNA-ESD Co-Design for Fully Integrated CMOS Wireless Receivers offers the reader intuitive insight in the LNA’s behavior, as well as the necessary mathematical background to optimize its performance. All material is experimentally verified with several CMOS implementations, among which a fully integrated GPS receiver front-end. The book is essential reading for RF design engineers and researchers in the field and is also suitable as a text book for an advanced course on the subject.
Download or read book An Ultra Wide Band CMOS Low Noise Amplifier Design written by Nahusha Bhadravati Mohankumar and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: An RF ultra wide band low noise amplifier designed for the frequency range of 12-18 GHz of operation is presented in this paper. The low noise amplifier is designed using the state-of-the-art complementary metal oxide semiconductor 45 nm technology. Berkeley's Predictive Technology Model (PTM) is used to generate a fairly accurate mathematical model and the SPICE data is implemented into the BSIM 4 version of the Advanced Design Systems (ADS) program. The low noise design strategy is mainly based on the analysis of high frequency CMOS operation. This LNA has two stages: the first stage is a RL feedback amplifier with an inductive load, and the second stage is a RC feedback amplifier with an inductive load. High frequency small signal MOSFET models with shunt-shunt feedback are used to determine the input impedance, output impedance and gain equations governing this circuit. Simulation results of this two stage feedback amplifier demonstrate a gain of 19 dB over a 6 GHz bandwidth, high linearity, and a low noise figure-less than 2.4 dB. This is a low voltage high current amplifier which requires a supply voltage of simply 0.5 V and has low power consumption (~13.5 mW).
Download or read book Ultra Low Power and Ultra Low Cost Short Range Wireless Receivers in Nanoscale CMOS written by Zhicheng Lin and published by Springer. This book was released on 2015-07-25 with total page 119 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a state-of-the-art description of techniques to be used for ultra-low-power (ULP) and ultra-low-cost (ULC), short-range wireless receivers. Readers will learn what is required to deploy these receivers in short-range wireless sensor networks, which are proliferating widely to serve the internet of things (IoT) for “smart cities.” The authors address key challenges involved with the technology and the typical tradeoffs between ULP and ULC. Three design examples with advanced circuit techniques are described in order to address these trade-offs, which special focus on cost minimization. These three techniques enable respectively, cascading of radio frequency (RF) and baseband (BB) circuits under an ultra-low-voltage (ULV) supply, cascading of RF and BB circuits in current domain for current reuse and a novel function-reuse receiver architecture, suitable for ULV and multi-band ULP applications such as the sub-GHz ZigBee.
Download or read book Circuit and System Design for Fully Integrated CMOS Direct conversion Multi band OFDM Ultra wideband Receivers written by Pengbei Zhang and published by . This book was released on 2007 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: A novel "two-step" frequency generation scheme and its associated frequency synthesizer architecture are also proposed in this dissertation. This scheme can provide all MB-OFDM UWB bands with only two frequency mixing steps. Analysis on its phase noise and parasitic frequency spur performance justifies its effectiveness.
Download or read book Development of RF CMOS Receiver Front ends for Ultra wideband Communications written by Xin Guan and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultra-Wideband (UWB) technology has become one of the hottest topics in wireless communications, for it provides cost-effective, power-efficient, high bandwidth solution for relaying data in the immediate area (up to 10 meters). This work demonstrates two different solutions for the RF front-end designs in the UWB receivers, one is distributed topology, and the other is based on traditional lumped element topology. The distributed amplifier is one of the attractive candidates for UWB Low Noise Amplifier (LNA). The design, analysis and operation of the distributed amplifiers will be presented. A distributed amplifier is designed with Coplanar Waveguide (CPW) transmission lines in 0.25-[micron] CMOS process for time domain UWB applications. New design techniques and new topologies are developed to enhance the power-efficiency and reduce the chip area. A compact and high performance distributed amplifier with Patterned Grounded Shield (PGS) inductors is developed in 0.25-[micron] CMOS process. The amplifier has a measurement result of 7.2dB gain, 4.2-6dB noise figure, and less than -10dB return loss through 0-11GHz. A new distributed amplifier implementing cascade common source gain cells is presented in 0.18-[micron] CMOS. The new amplifier demonstrates a high gain of 16dB at a power consumption of 100mW, and a gain of 10dB at a low power consumption of 19mW. A UWB LNA utilizing resistive shunt feedback technique is reported in 0.18-[micron] CMOS process. The measurement results of the UWB LNA demonstrate a maximum gain of 10.5dB and a noise figure of 3.3-4.5dB from 3-9.5GHz, while only consuming 9mW power. Based on the distributed amplifier and resistive shunt-feedback amplifier designs, two UWB RF front-ends are developed. One is a distributed LNA-Mixer. Unlike the conventional distributed mixer, which can only deliver low gain and high noise figure, the proposed distributed LNA-Mixer demonstrates 12-14dB gain,4-5dB noise figure and higher than 10dB return loss at RF and LO ports over 2-16GHz. To overcome the power consumption and chip area problems encountered in distributed circuits, another UWB RF front-end is also designed with lumped elements. This front-end, employing resistive shunt-feedback technique into its LNA design, can achieve a gain of 12dB and noise figure of 8-10dB through 3-10GHz, the return loss of less than -10dB from 3- 10GHz at RF port, and less than -7dB at LO port, while only consuming 25mA current from 1.8V voltage supply.
Download or read book Design of Tunable Low noise Amplifier in 0 13 symbol for Greek Letter Mu m CMOS Technology for Multistandard RF Transceivers written by and published by . This book was released on 2007 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: The global market of mobile and wireless communications is witnessing explosive growth in size as well as radical changes. Third generation (3G) wireless systems have recently been deployed and some are still in the process. 3G wireless systems promise integration of voice and data communications with higher data rates and a superior quality of service compared to second generation systems. Unfortunately, more and more communication standards continue to be developed which ultimately requires specific RF/MW and baseband communication integrated circuits that are designed for functionality and compatibility with a specific type of network. Although communication devices such as cellular phones integrate different services such as voice, Bluetooth, GPS, and WLAN, each service requires its own dedicated radio transceiver which results in high power consumption and larger PCB area usage. With the rapid advances in silicon CMOS integrated circuit technology combined with extensive research, a global solution which aims at introducing a global communication system that encompasses all communication standards appears to be emerging. State of the art CMOS technology not only has the capability of operation in the GHz range, but it also provides the advantage of low cost and high level of integration. These features propel CMOS technology as the ideal candidate for current trends, which currently aim to integrate more RF/MW circuits on the same chip. Armed with such technology ideas such as software radio look more attainable than they ever were in the past. Unfortunately, realizing true software radio for mobile applications still remains a tremendous challenge since it requires a high sampling rate and a wide-bandwidth Analog-to-Digital converter which is extremely power hungry and not suitable for battery operated mobile devices. Another approach to realize a flexible and reconfigurable RF/MW transceiver that could operate in a diverse mobile environment and provides a multiband and multistandard solution. The work presented in this thesis focuses on the design of an integrated and tunable low-noise amplifier as part of software defined radio (SDR).
Download or read book CMOS Wide Tuning Gilbert Mixer with Controllable IF Bandwidth in Upcoming RF Front End for Multi Band Multi Standard Applications written by Jianfeng Ren and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The current global system for mobile communications, wireless local area, Bluetooth, and ultra-wideband demands a multi-band/multi-standard RF front end that can access all the available bandwidth specifications. Trade-offs occur between power consumption, noise figure, and linearity in CMOS Gilbert mixer wide tuning designs. Besides, it is preferable to have a constant IF bandwidth for different gain settings as the bandwidth varies with the load impedance when an RF receiver is tuned to a higher frequency. My dissertation consists of three parts. First, a tunable constant IF bandwidth Gilbert mixer is introduced for multi-band standard wireless applications such as 802.11 a/b/g WLAN and 802.16a WMAN, followed by a design synthesis approach to optimize the mixer to meet the design center frequency range, constant IF bandwidth, and power. A synthesized Gilbert mixer with effective prototype inductors, designed in 180 nm CMOS process, is presented in this dissertation with the tunability of 200 MHz IF, a constant IF bandwidth of 50 MHz, a conversion gain of 13.75 dB, a noise figure of 2.9dB, 1-dB compression point of -15.19 dBm, IIP3 of -5.8 dBm, and a power of 9 mW. Next, mixer inductor loss and equivalent electronic circuit analysis are presented to optimize the approach to offset center frequency and bandwidth inaccuracy due to the inductance loss between the actual and ideal prototype inductor. The proposed tunable Gilbert mixer simulations present a tunable IF of 177.8 MHz, an IF bandwidth of 87.57 MHz, a conversion gain of 7.4 dB, a noise figure of 3.14 dB, 1-dB compression point of -17.1 dBm, and IIP3 of -19.8 dBm. Last, a CMOS integrated wide frequency span CMOS low noise amplifier is integrated with the tunable Gilbert mixer to achieve a 27.68 dB conversion gain, a 3.47 dB low noise figure, -14.6 dBm 1-dB compression point, and -18.6 dBm IIP3.
Download or read book Design of a 3 1 4 8 GHZ RF Front end for an Ultra Wideband Receiver written by Pushkar Sharma and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: IEEE 802.15 High Rate Alternative PHY task group (TG3a) is working to define a protocol for Wireless Personal Area Networks (WPANs) which makes it possible to attain data rates of greater than 110Mbps. Ultra Wideband (UWB) technology utilizing frequency band of 3.168 GHz - 10.6 GHz is an emerging solution to this with data rates of 110, 200 and 480 Mbps. Initially, UWB mode I devices using only 3.168 GHz - 4.752GHz have been proposed. Low Noise Amplifier (LNA) and I-Q mixers are key components constituting the RF front-end. Performance of these blocks is very critical to the overall performance of the receiver. In general, main considerations for the LNA are low noise, 50 broadband input matching, high gain with maximum flatness and good linearity. For the mixers, it is essential to attain low flicker noise performance coupled with good conversion gain. Proposed LNA architecture is a derivative of inductive source degenerated topology. Broadband matching at the LNA output is achieved using LC band-pass filter. To obtain high gain with maximum flatness, an LC band-pass filter is used at its output. Proposed LNA achieved a gain of 15dB, noise figure of less than 2.6dB and IIP3 of more than-7dBm. Mixer is a modified version of double balanced Gilbert cell topology where both I and Q channel mixers are merged together. Frequency response of each sub-band is matched by using an additional inductor, which further improves the noise figure and conversion gain. Current bleeding scheme is used to further reduce the low frequency noise. Mixer achieves average conversion gain of 14.5dB, IIP3 more than 6dBm and Double Side Band (DSB) noise figure less than 9dB. Maximum variation in conversion gain is desired to be less than 1dB. Both LNA and mixers are designed to be fabricated in TSMC 0.18 [mu]m CMOS technology.
Download or read book Design and Implementation of 3 1 10 6 Ghz Uwb 24 ghz and V band Cmos Low Noise Amplifiers written by and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design an Ultra Wideband Low Noise Amplifier for 6 GHz Applications written by Jitendra Mishra and published by LAP Lambert Academic Publishing. This book was released on 2014-05-21 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, down scaling in CMOS advanced technologies has provided high performance in the digital circuits and reduced cost thereby meeting to a large extent the increasing demand of wireless communication products. With this technology advancement, the unity-current gain frequency of CMOS technology is now over several tens of GHz making the realization of system on-chip solution possible which turns to further reduced cost. The concept of the RFIC design needed for the design of low noise amplifier such as gain, noise, stability, linearity, power consumption etc is discussed in the report. An overview has been given on different LNA architecture, their advantages and disadvantages have also been discussed.The designed circuit is simulated with the help of specture simulator from cadence design system using UMC .18um CMOS technology. After the simulation we got the simulated result of low noise amplifier as forward voltage gain(S21) of 18.53dB, noise figure is 1.8dB and minimum noise figure is 1.6dB, input reflection coefficient (S11) is -24dB, output reflection coefficient(S22) is -15dB, stability factor (Kf) is 4, IIP3 -10 dBm by using power supply voltage of 1.8v.
Download or read book Analysis and Design of Cmos Ultra Wideband Impulse Radio Transceiver written by Li Qiang and published by LAP Lambert Academic Publishing. This book was released on 2010-06 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ultra-wideband (UWB) impulse-radio technology has unique features including high data-rate as well as low power consumption with ranging and localization capabilities. An UWB front-end, however, has to accommodate design challenges resulting from the exceptional wide bandwidth of several GHz. This book discusses the implementation issues of the UWB impulse-radio transceiver front-end, including the performance analysis of practical systems and the design of radio-frequency integrated circuits for transceiver front-ends. A general framework for performance evaluation of practical impulse radio system is proposed and demonstrated in scenarios of high-speed data communications as well as low-data-rate wireless body-area networks. An inductorless low- noise amplifier is designed with syncretic adoption of thermal noise canceling, capacitor peaking, and current reuse. The CMOS ransmit/receive switch design with highest reported bandwidth and power handling capability are discussed with customized transistor layout and triple-well resistive body- floating techniques. The prototypes have been demonstrated in state-of-the-art 130nm CMOS technology.
Download or read book Analysis and Design of CMOS Ultra Wideband Receivers written by Mahim Ranjan and published by . This book was released on 2006 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: This research focuses on the design and analysis of Ultra Wideband receivers for Multiband Orthogonal Frequency Division Multiplexing systems. A comprehensive analysis of distortion effects in UWB receivers for different interference scenarios is performed. Analytical expressions for the power spectral density of all relevant distortion products (cross-modulation, intermodulation and harmonic distortion) are derived for the first time. Calculations are presented to show the effect of these distortion effects on overall system performance. Expressions developed will help circuit and system designers to come to an optimum power consumption versus performance trade-off. An RF receiver front-end for MB-OFDM based UWB systems is designed. The receiver is the first to be designed without using any on-chip inductors or off-chip matching components. The receiver occupies only 0.35 mm sq. in a 0.18uM CMOS process, consists of a low-noise amplifier, downconverter and a bandpass filter. The measured receiver gain is 21 dB, Noise Figure is less than 6 dB, input IIP3 is -5 dBm and the receiver consumes 19.5 mA from a 2.3V supply. The receiver covers all the MB-OFDM bands from 3.1 GHz to 8 GHz.
Download or read book Ultra Wideband Communications written by Mohammad Abdul Matin and published by IntechOpen. This book was released on 2011-07-27 with total page 362 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book has addressed few challenges to ensure the success of UWB technologies and covers several research areas including UWB low cost transceiver, low noise amplifier (LNA), ADC architectures, UWB filter, and high power UWB amplifiers. It is believed that this book serves as a comprehensive reference for graduate students in UWB technologies.
Download or read book Linear CMOS RF Power Amplifiers for Wireless Applications written by Paulo Augusto Dal Fabbro and published by Springer. This book was released on 2012-09-05 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in electronics have pushed mankind to create devices, ranging from - credible gadgets to medical equipment to spacecraft instruments. More than that, modern society is getting used to—if not dependent on—the comfort, solutions, and astonishing amount of information brought by these devices. One ?eld that has continuously bene?tted from those advances is the radio frequency integrated c- cuit (RFIC) design, which in its turn has promoted countless bene?ts to the mankind as a payback. Wireless communications is one prominent example of what the - vances in electronics have enabled and their consequences to our daily life. How could anyone back in the eighties think of the possibilities opened by the wireless local area networks (WLANs) that can be found today in a host of places, such as public libraries, coffee shops, trains, to name just a few? How can a youngster, who lives this true WLAN experience nowadays, imagine a world without it? This book dealswith the design oflinearCMOS RF PowerAmpli?ers(PAs). The RF PA is a very important part of the RF transceiver, the device that enables wireless communications. Two important aspects that are key to keep the advances in RF PA design at an accelerate pace are treated: ef?ciency enhancement and frequen- tunable capability. For this purpose, the design of two different integrated circuits realizedina0. 11μmtechnologyispresented,eachoneaddressingadifferentaspect. With respect to ef?ciency enhancement, the design of a dynamic supply RF power ampli?er is treated, making up the material of Chaps. 2 to 4.
