Download or read book Design and Optimization of the Junction Termination Extension JTE Method for 4H SiC High Voltage Schottky Diodes written by Atul Mahajan and published by . This book was released on 2004 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Recent Developments in Electrical and Electronics Engineering written by Poonam Singhal and published by Springer Nature. This book was released on 2023-04-28 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains cutting-edge research content presented by researchers, engineers, developers, and practitioners from academia and industry at the International Conference on Recent Developments in Electrical and Electronics Engineering (ICRDEEE 2022). The materials in the book include theory and applications for different areas of Electrical and Electronics Engineering. The topics covered include power systems and protection, energy, electric vehicles, smart grid, semiconductor technologies, electrical machines and drives, control systems with artificial intelligence, etc. The content is useful for researchers, professionals, and academicians in understanding current research trends, findings, and future scope of research in electrical and electronics engineering models.
Download or read book Wide Bandgap Semiconductor Based Micro Nano Devices written by Jung-Hun Seo and published by MDPI. This book was released on 2019-04-25 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.
Download or read book Design and Fabrication of High Voltage 4H SiC Schottky Barrier Diodes written by Luo, Xixi and published by . This book was released on 2019 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: A novel design of mesa-etch termination and Superjunction JBS diode structure has been proposed and optimized. The new mesa-etch termination can achieve over 90% of ideal maximal breakdown voltage within a wide sidewall implant dose window (~9e16 cm−3). Besides the high tolerance on implant dose, the proposed design also exhibits high tolerance on the etch sidewall angle: minimal maximum breakdown voltage was observed with etch sidewall angle variations. The Superjunction JBS diode can obtain both 96.4% maximum super junction breakdown voltage and 76.6% JBS Schottky surface electric field reduction. The super junction maximal breakdown voltage is 1.5 times large as the conventional Schottky diode breakdown voltage and the leakage current is logarithmically related to the surface electric field. The superior breakdown voltage represents a large improvement on the power rectifier performance. Based on these structure improvements, vertical 4H-SiC Schottky Diodes have been fabricated and tested. Vertical 4H-SiC Schottky Diode without any edge termination has a breakdown voltage as large as 692 V and exhibits an on-state specific resistance as small as 7.9 mΩ*cm2. Such breakdown voltage is much higher than simulation results. In the meantime, on-state resistance is also much larger than the simulation results. The mechanism for these improved power rectifier performances will be furthered investigated in future studies
Download or read book More than Moore Devices and Integration for Semiconductors written by Francesca Iacopi and published by Springer Nature. This book was released on 2023-02-17 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a comprehensive, state-of-the-art reference for miniaturized More-than-Moore systems with a broad range of functionalities that can be added to 3D microsystems, including flexible electronics, metasurfaces and power sources. The book also includes examples of applications for brain-computer interfaces and event-driven imaging systems. Provides a comprehensive, state-of-the-art reference for miniaturized More-than-Moore systems; Covers functionalities to add to 3D microsystems, including flexible electronics, metasurfaces and power sources; Includes current applications, such as brain-computer interfaces, event - driven imaging and edge computing.
Download or read book Vertical GaN and SiC Power Devices written by Kazuhiro Mochizuki and published by Artech House. This book was released on 2018-04-30 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices. Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource.
Download or read book Design and Fabrication of 4H Silicon Carbide Gate Turn off Thyristors written by Lei Lin and published by . This book was released on 2013 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Carbide and Related Materials 2003 written by Roland Madar and published by . This book was released on 2004 with total page 908 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Wide Bandgap Semiconductor Power Devices written by B. Jayant Baliga and published by Woodhead Publishing. This book was released on 2018-10-17 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. - Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications - Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability - Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Download or read book Electrical Characterization of 4H and 6H silicon Carbide Schottky Diodes written by Jeffrey C. Wiemeri and published by . This book was released on 1995 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metal Semiconductor Schottky Barrier Junctions and Their Applications written by B.L. Sharma and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the larger interest, it was also considered necessary to have the different topics of Schottky barrier junctions written by experts.
Download or read book Simulation and Design of 4H SiC Schottky Diode and Si IGBT written by 黃浩宸 and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Development of 4H SiC PiN Diodes for High Voltage Applications written by Craig A. Fisher and published by . This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Shi ti ming bian written by and published by . This book was released on 1972 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design and Fabrication of 4H SiC High Voltage Devices written by Woongje Sung and published by . This book was released on 2011 with total page 177 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modern Power Devices written by B. Jayant Baliga and published by Wiley-Interscience. This book was released on 1987-03-10 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written in a tutorial form, the text supplies in-depth the physics, design, and fabrication technology for power devices. Each chapter includes a discussion of the basic concepts of device operation and their electrical characteristics, a detailed analysis of the device physics, and the technology of fabrication. Extensive analytical solutions are used to enable the reader to obtain an understanding of the physics.
Download or read book Method of Making High Breakdown Voltage Semiconductor Device written by and published by . This book was released on 1990 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A semiconductor device having at least one P-N junction and a multiple-zone junction termination extension (JTE) region which uniformly merges with the reverse blocking junction is disclosed. The blocking junction is graded into multiple zones of lower concentration dopant adjacent termination to facilitate merging of the JTE to the blocking junction and placing of the JTE at or near the high field point of the blocking junction. Preferably, the JTE region substantially overlaps the graded blocking junction region. A novel device fabrication method is also provided which eliminates the prior art step of separately diffusing the JTE region.
