Download or read book Characterization of Diluted Magnetic Semiconductors for Spintronics Applications written by Xiaoyu Zhou and published by . This book was released on 2007 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nanomagnetism And Spintronics Fabrication Materials Characterization And Applications written by Farzad Nasirpouri and published by World Scientific. This book was released on 2010-12-21 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: Spintronics manipulates individual magnetic moments to integrate logic functions and non-volatile information storage on the same platform. As is often the case in condensed matter science, advances are made through the synthesis of novel materials and high quality new physics materials. Giant magnetoresistance and dilute magnetic semiconductors are two such examples. However, the remarkable potential of spintronics for quantum computation faces major challenges when it comes to controlling simultaneously several qbits encoded in magnetic moments.After a brief introduction to concepts in nanomagnetism and spintronics, the text reviews recent techniques and their achievements in the synthesis and fabrication of magnetic nanostructures. The methods presented here emphasize bottom up or top down approaches for nanodots, nanowires and thin films. They include: focused ion beam irradiation, electron beam-induced chemical vapour deposition, chemical, and electrochemical methods. The later part of the book reviews magnetoelectric materials, the giant magnetoresistance in magnetic superlattices, dynamics effects in spin transfer torque oscillators, dilute magnetic oxides, rare earth nitrides with nuclear resonance scattering, and Mössbauer spectroscopy in spintronics. Finally, the last part of this book discusses applications to magnetic storage and bio-magnetism.Nanomagnetism and Spintronics will be useful to graduate students and researchers and engineers in the field of nanoscience.

Download or read book Nanomagnetism and Spintronics written by Farzad Nasirpouri and published by World Scientific. This book was released on 2011 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanomagnetism and spintronics are two close subfields of nanoscience, explaining the effect of substantial magnetic properties of matter when the materials fabrication is realized at a comparable length size. Nanomagnetism deals with the magnetic phenomena specific to the structures having dimensions in the submicron range. The fact that the electronic transport properties of materials are dependent on the magnetic properties' artificial nanostructures, i.e., giant magnetoresistance (GMR) or tunneling magnetoresistance (TMR), has revolutionized spintronics science and technology. This book explains the concepts of nanomagnetism and spintronics by viewing the most recent research works from internationally distinguished research groups. Placing special emphasis on crucial fundamental and technical aspects of nanomagnetism and spintronics, it serves as a one-stop reference for universities offering postgraduate programs in nanotechnology or related disciplines. This unique book deals with all three stages required for conducting research in nanomagnetism and spintronics including fabrication, characterization and applications of nanomagnetic and spintronics materials, providing general concepts and an insightful overview of this subject for research students and scientists from different backgrounds investigating the multidisciplinary area of nanotechnology.

Download or read book First Principle Vs Experimental Design of Diluted Magnetic Semiconductors written by Omar Mounkachi and published by Nova Science Publishers. This book was released on 2018-10 with total page 177 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent discoveries have given rise to a new class of electronics known as "spin electronics or spintronics," which uses the electron spin rather than its charge to create polarized currents. Spintronics is currently experiencing an extraordinary development with the manufacture of nanoscale devices based on ferromagnetic materials and semiconductors. Their applications are numerous, ranging from recording, electronics, and optoelectronics to quantum information. Spintronics is a new generation of electronics that has brought and continues to bring a lot of progress to information storage; this is due to the discovery of new materials with new functionalities and multiple applications. The discovery of giant magnetoresistance (GMR) in 1988 by Albert Fert and Peter Grünberg (receiver of the Nobel Prize in Physics in 2007) is considered a starting point of spintronics. GMR is based on the variation of the electric current in the presence of a magnetic field. The spintronics has made important contributions to the miniaturization desired for electronics; it uses nanometric components for processing and storing information. However, the limits of miniaturization on a nanometric scale are known, and it is imperative to develop new ways and new materials to exceed those limits. The most desired properties for these materials are high spin polarization, modular magnetic properties by an electric field and a long lifetime of the spin polarization. Among the new promising materials, we cite the following: Diluted magnetic semiconductors, which give new magnetic properties of conventional semiconductors, functional oxides (including the semi-metals and multiferroic metals) and organic semiconductors. The main theoretical challenge in this area is to understand how the macroscopic magnetic behavior observed results from interactions of a large number of degrees of microscopic freedom. In these systems the disorder is an essential parameter of magnetic phenomena, and due to random locations of impurity atoms it can lead to a total physical difference from the observed absence. There has been considerable recent advances in the design of these materials as diluted magnetic semiconductors (DMS, or diluted magnetic semiconductors), and a number of semiconductors were investigated as II-VI group and III-V group doped compounds, with transition metals substituting their original cations. There are several different theoretical approaches to study these magnetic materials. The ab-initio approach starts from the Schrödinger equation to simulate a given material. Such an approach is essential to determine the parameters and microscopic properties of such a system. In this book, the authors analyzed the electronic structure of magnetic semiconductors diluted in the case of ZnO, GaN, SnO2, TiO2, MgH2, EuO and EuN doped RENs (RE=GdN, DyN and HoN). The authors focused on magnetic, optical and exchange mechanisms which control the ferromagnetism in these systems. The purpose of this book is to propose some ideas to answer the most important question in material science for semiconductor spintronics, primarily considering how room-temperature ferromagnetism in DMS can be realized. Additionally, the correlation between first principle and experimental design to see how properties of yet-to-be-synthesized materials can be predicted is discussed.

Download or read book Diluted Magnetic Semiconductors written by Mukesh Kumar Jain and published by World Scientific. This book was released on 1991 with total page 682 pages. Available in PDF, EPUB and Kindle. Book excerpt: This review volume presents both basic and applied aspects of diluted magnetic semiconductors (DMS). The term DMS applies generally to semiconductors in which a fraction of its constituent ions are replaced by magnetic ions. This book is only the second to review DMS materials. It presents a detailed treatment of the current state of knowledge of the established properties of DMS in the form of single crystals, quantum wells and superlattices. It also brings together recent work on new DMS materials and presents discussions on a wide range of possible DMS applications.

Download or read book Local Moment Ferromagnets written by and published by . This book was released on 2011-10-14 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dilute Magnetic Semiconductors Based on Gan and Zno written by Tom Kammermeier and published by Sudwestdeutscher Verlag Fur Hochschulschriften AG. This book was released on 2010-05 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: The two wide band gap dilute magnetic semiconductors (DMS) Gd: GaN and Co: ZnO are among the most favored materials for spintronic applications. Despite intense research efforts during the last years, the origin of the magnetic order is still under debate. This work reports structural and magnetic investigations on these DMS materials employing several complementary techniques. The X-ray linear dichroism (XLD) has been used to gain element-specific insight into the local structure of dopants and cations. X-ray diffraction (XRD) has resulted in information about the global structural properties. Magnetic characterization by superconducting quantum interference device (SQUID) has been complemented by electron spin resonance (ESR) and X-ray magnetic circular dichroism (XMCD). This compilation of different techniques has yield new insight in the complex magnetic behavior of these wide band gap dilute magnetic semiconductor

Download or read book Growth and characterization of diluted magnetic semiconductors written by Dwight D. Hunter and published by . This book was released on 2005 with total page 55 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Spintronic Materials and Technology written by Yongbing Xu and published by CRC Press. This book was released on 2019-08-30 with total page 423 pages. Available in PDF, EPUB and Kindle. Book excerpt: Few books exist that cover the hot field of second-generation spintronic devices, despite their potential to revolutionize the IT industry.Compiling the obstacles and progress of spin-controlled devices into one source, Spintronic Materials and Technology presents an in-depth examination of the most recent technological spintronic developments. Featuring contributions from active researchers and leading experts, the book chronicles the main research challenges in spintronics. It first depicts the different classes of materials systems currently under investigation for use in spintronic devices. The contributors also address issues concerning the operation of spintronic devices, such as the new principle for future devices that use spin-polarized current. This promises to enable switching of individual spin components of the device while avoiding crosstalk at the nanoscale. The book concludes with descriptions of both Si and III-V semiconductor-based spin transistors and the integration of spin technology with photonics. The second-generation spintronic devices discussed in Spintronic Materials and Technology will not only improve the existing capabilities of electronic transistors, but will enable future computers to run faster and consume less power.

Download or read book EMR ESR EPR Spectroscopy for Characterization of Nanomaterials written by Ashutosh Kumar Shukla and published by Springer. This book was released on 2016-11-09 with total page 183 pages. Available in PDF, EPUB and Kindle. Book excerpt: The subject matter of this book is the application of EMR/ESR/EPR spectroscopy for characterization of nanomaterials. Initial chapters deal with nanomaterials and their classification. Characterization of metallic nanoparticles, metal oxide nanoparticles and rare earth impurity doped nanoparticles from the (ESR) spectrum parameters are covered in the chapters that follow. A special feature of the book is EMR/ESR/EPR spectroscopic characterization of nanoparticles which are important due to their bactericidal and anticancerous properties. Strength of continuous wave (CW) is explained with the help of suitable examples. The book focuses on applications and data interpretation avoiding extensive use of mathematics so that it also caters to the need of young scientists in the life science disciplines. The book includes a comparison with other spectroscopic characterization methods so as to give an integrated approach to the reader. It will prove useful to biomedical scientists and engineers, chemists, and materials engineers in student, researcher, and practitioner positions.

Download or read book Epitaxial Growth and Characterization of Oxide Based Ferromagnetic Semiconductors for Spintronics Applications written by Hyucksoo Yang and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: The utilization of the spin as an additional degree of freedom to electronic transport opens a new field for novel electronic devices combined with magnetic and optical properties. Semiconductors doped with some amount of the magnetic element have been developed as an effective injector of spin-polarized carriers owing to a good electrical conductivity match with semiconductors to be hybridized.

Download or read book Investigaton of the Suitability of Wide Bandgap Dilute Magnetic Semiconductors for Spintronics written by Matthew Hartmann Kane and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: New semiconductor materials may enable next-generation 'spintronic' devices which exploit both the spin and charge of an electron for data processing, storage, and transfer. The realization of such devices would benefit greatly from room temperature ferromagnetic dilute magnetic semiconductors. Theoretical predictions have suggested that room temperature ferromagnetism may be possible in the wide bandgap semiconductors GaMnN and ZnMnO, though the existing models require input from the growth of high-quality materials. This work focuses on an experimental effort to develop high-quality materials in both of these wide bandgap materials systems. ZnMnO and ZnCoO single crystals have been grown by a modified melt growth technique. X-ray diffraction was used to examine the structural quality and demonstrate the single crystal character of these devices. Substitutional transition metal incorporation has been verified by optical transmission and electron paramagnetic resonance measurements. No indications of ferromagnetic hysteresis are observed from the bulk single crystal samples, and temperature dependent magnetization studies demonstrate a dominant antiferromagnetic exchange interaction. Efforts to introduce ferromagnetic ordering were only successful through processing techniques which significantly degraded the material quality. GaMnN thin films were grown by metalorganic chemical vapor deposition. Good crystalline quality and a consistent growth mode with Mn incorporation were verified by several independent characterization techniques. Substitutional incorporation of Mn on the Ga lattice site was confirmed by electron paramagnetic resonance. Mn acted as a deep acceptor in GaN. Nevertheless, ferromagnetic hysteresis was observed in the GaMnN films. The apparent strength of the magnetization correlated with the relative ratio of trivalent to divalent Mn. Valence state control through codoping with additional donors such as silicon was observed. Additional studies on GaFeN also showed a magnetic hysteresis. A comparison with implanted samples showed that the common origin to the apparent strong ferromagnetic hysteresis related to contribution from Mn substitutional ions. The observed magnetic hysteresis is due to the formation of Mn-rich regions during the growth process. This work demonstrated that the original intrinsic models for room temperature ferromagnetism in the wide bandgap semiconductors do not hold and the room temperature ferromagnetism in these materials results from extrinsic contributions.

Download or read book Rare Earth and Transition Metal Doping of Semiconductor Materials written by Volkmar Dierolf and published by Woodhead Publishing. This book was released on 2016-01-23 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare Earth and Transition Metal Doping of Semiconductor Material explores traditional semiconductor devices that are based on control of the electron's electric charge. This book looks at the semiconductor materials used for spintronics applications, in particular focusing on wide band-gap semiconductors doped with transition metals and rare earths. These materials are of particular commercial interest because their spin can be controlled at room temperature, a clear opposition to the most previous research on Gallium Arsenide, which allowed for control of spins at supercold temperatures. Part One of the book explains the theory of magnetism in semiconductors, while Part Two covers the growth of semiconductors for spintronics. Finally, Part Three looks at the characterization and properties of semiconductors for spintronics, with Part Four exploring the devices and the future direction of spintronics. - Examines materials which are of commercial interest for producing smaller, faster, and more power-efficient computers and other devices - Analyzes the theory behind magnetism in semiconductors and the growth of semiconductors for spintronics - Details the properties of semiconductors for spintronics

Download or read book Transition Metal Doped Spintronics Materials written by R. Saravanan and published by Materials Research Forum LLC. This book was released on 2023-02-15 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents new research on the synthesis and characterization of various oxide based dilute magnetic spintronics materials (ODMS). The characterization techniques included powder X-ray diffraction, scanning electron microscopy, vibrating sample magnetometry and UV visible spectrometry. The morphological, magnetic and optical properties are reported. Electron density distribution studies are presented in the form of three, two and one dimensional electron density maps. Keywords: Spintronics Materials, Zn1-xTixO, Zn1-xFexO, Zn1-xVxO, Zn1-xNix/2Vx/2O, Synthesis, X-ray Diffraction. Rietveld Analysis, Surface Morphological Properties, Optical Properties, Magnetic Properties, Charge Density Analysis, Electron Density Distribution.

Download or read book Femtosecond Optical Characterization and Applications in Cd Mn Te Diluted Magnetic Semiconductors written by Daozhi Wang and published by . This book was released on 2007 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Newnes. This book was released on 2013-04-11 with total page 829 pages. Available in PDF, EPUB and Kindle. Book excerpt: Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures Most of the chapters are authored by scientists that are world-wide among the top-ten in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures

Download or read book Molecular Beam Epitaxy written by Hajime Asahi and published by John Wiley & Sons. This book was released on 2019-04-15 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.