Download or read book Atomic Scale Modeling of Boron Transient Diffusion in Silicon written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We presents results from a predictive atomic level simulation of Boron diffusion in Silicon under a wide variety of implant and annealing conditions. The parameters for this simulation have been extracted from first principle approximation models and molecular dynamics simulations. The results are compared with experiments showing good agreement in all cases. The parameters and reactions used have been implemented into a continuum-level model simulator.
Download or read book Atomic Scale Models of Ion Implantation and Dopant Diffusion in Silicon written by and published by . This book was released on 1999 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We review our recent work on an atomistic approach to the development of predictive process simulation tools. First principles methods, molecular dynamics simulations, and experimental results are used to construct a database of defect and dopant energetics in Si. This is used as input for kinetic Monte Carlo simulations. C and B trapping of the Si self- interstitial is shown to help explain the enormous disparity in its measured diffusivity. Excellent agreement is found between experiments and simulations of transient enhanced diffusion following 20-80 keV B implants into Si, and with those of 50 keV Si implants into complex B-doped structures. Our simulations predict novel behavior of the time evolution of the electrically active B fraction during annealing.
Download or read book Simulation and Experimental Study of Boron Clustering in Crystalline Silicon written by Weiwei Luo and published by . This book was released on 2000 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Download or read book Modeling of Transient Enhanced Diffusion and Simulation of Boron Activation and Deactivation in Silicon written by Heidi Meyer and published by . This book was released on 2002 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling and Control of Transient Enhanced Diffusion of Boron in Silicon written by Rudiyanto Gunawan and published by . This book was released on 2003 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals written by Oleg Velichko and published by World Scientific. This book was released on 2019-11-05 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
Download or read book Atomic Scale Modeling of Stress and Pairing Effects on Dopant Behavior in Silicon written by Chihak Ahn and published by . This book was released on 2007 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics and Modeling of Ion Implantation Induced Transient Deactivation and Diffusion Processes in Boron Doped Silicon written by Srinivasan Chakravarthi and published by . This book was released on 2001 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Atomic scale Mechanisms of Dopant and Self diffusion in Silicon written by Ant Ural and published by . This book was released on 2001 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Toward a Predictive Atomistic Model of Ion Implantation and Dopant Diffusion in Silicon written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We review the development and application of kinetic Monte Carlo simulations to investigate defect and dopant diffusion in ion implanted silicon. In these type of Monte Carlo models, defects and dopants are treated at the atomic scale, and move according to reaction rates given as input principles. These input parameters can be obtained from first principles calculations and/or empirical molecular dynamics simulations, or can be extracted from fits to experimental data. Time and length scales differing several orders of magnitude can be followed with this method, allowing for direct comparison with experiments. The different approaches are explained and some results presented.
Download or read book Formation and Transport Properties of Defects in Boron doped Silicon Studied Through Tight Binding Bond Models written by Paul Brent Rasband and published by . This book was released on 1996 with total page 662 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of Crystalline Silicon written by Robert Hull and published by IET. This book was released on 1999 with total page 1054 pages. Available in PDF, EPUB and Kindle. Book excerpt: A unique and well-organized reference, this book provides illuminating data, distinctive insight and expert guidance on silicon properties.
Download or read book International Conference on Simulation of Semiconductor Processes and Devices written by and published by . This book was released on 2005 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A New Model for Boron Diffusion in Silicon written by John Ross Anderson and published by . This book was released on 1976 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Modeling of Boron Diffusion in Polysilicon on silicon Structures written by Akif Sultan and published by . This book was released on 1993 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid Thermal and Other Short time Processing Technologies II written by Dim-Lee Kwong and published by The Electrochemical Society. This book was released on 2001 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Electronics, Dielectric Science and Technology, and High Temperature Materials Divisions."
