Download or read book Analysis and Modeling of Nonvolatile Semiconductor Memories written by Fang-Cheng Yu and published by . This book was released on 1985 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design Exploration of Emerging Nano scale Non volatile Memory written by Hao Yu and published by Springer Science & Business. This book was released on 2014-04-18 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the latest techniques for characterization, modeling and design for nano-scale non-volatile memory (NVM) devices. Coverage focuses on fundamental NVM device fabrication and characterization, internal state identification of memristic dynamics with physics modeling, NVM circuit design and hybrid NVM memory system design-space optimization. The authors discuss design methodologies for nano-scale NVM devices from a circuits/systems perspective, including the general foundations for the fundamental memristic dynamics in NVM devices. Coverage includes physical modeling, as well as the development of a platform to explore novel hybrid CMOS and NVM circuit and system design. • Offers readers a systematic and comprehensive treatment of emerging nano-scale non-volatile memory (NVM) devices; • Focuses on the internal state of NVM memristic dynamics, novel NVM readout and memory cell circuit design and hybrid NVM memory system optimization; • Provides both theoretical analysis and practical examples to illustrate design methodologies; • Illustrates design and analysis for recent developments in spin-toque-transfer, domain-wall racetrack and memristors.

Download or read book Nonvolatile Semiconductor Memory Technology written by William D. Brown and published by Wiley-IEEE Press. This book was released on 1998 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive reference book provides electronics engineers with the technical data and perspective necessary for the intelligent selection, specification, and application of nonvolatile semiconductor memory devices. A "one-stop shopping" tool for the working engineer, this book presents the fundamental aspects of nonvolatile semiconductor memory technologies, devices, reliability, and applications.

Download or read book Nanoscale Semiconductor Memories written by Santosh K. Kurinec and published by CRC Press. This book was released on 2017-07-28 with total page 450 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.

Download or read book Semiconductor Memories and Systems written by Andrea Redaelli and published by Woodhead Publishing. This book was released on 2022-06-07 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Memories and Systems provides a comprehensive overview of the current state of semiconductor memory at the technology and system levels. After an introduction on market trends and memory applications, the book focuses on mainstream technologies, illustrating their current status, challenges and opportunities, with special attention paid to scalability paths. Technologies discussed include static random access memory (SRAM), dynamic random access memory (DRAM), non-volatile memory (NVM), and NAND flash memory. Embedded memory and requirements and system level needs for storage class memory are also addressed. Each chapter covers physical operating mechanisms, fabrication technologies, and the main challenges to scalability.Finally, the work reviews the emerging trends for storage class memory, mainly focusing on the advantages and opportunities of phase change based memory technologies. - Features contributions from experts from leading companies in semiconductor memory - Discusses physical operating mechanisms, fabrication technologies and paths to scalability for current and emerging semiconductor memories - Reviews primary memory technologies, including SRAM, DRAM, NVM and NAND flash memory - Includes emerging storage class memory technologies such as phase change memory

Download or read book Nonvolatile Memories written by Tseung-Yuen Tseng and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Modeling And Design Analysis Of Emerging Non volatile Memories For Future Computer Systems written by Yang Zheng and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: As traditional SRAM and DRAM are facing leakage power and fabrication difficulties beyond 22nm technology, emerging memory technologies such as spin transfer-torque RAM (STT-RAM), phase-change RAM (PCRAM), and resistive RAM (ReRAM) have been widely studied as promising candidates for the next generation memory technologies. Among all these NVM technologies, STT-RAM is expected to be used as on-chip caches for its fast access latency and better scalability. While ReRAM is predicted to replace NAND flash in the foreseeable future due to its extremely high density.However, several challenges have to be dealt with before these emerging memory technologies being commercialized. Although the read latency of STT-RAM is relatively fast, the write latency remains to be slow. Also, traditional 1-Transistor-1-MTJ cell structure suffers from severe leakage current and dynamic power as the technology node continuously shrinks down. On the other hand, ReRAM also suffers from reliability problems. Due to the stochastic nature of memristor, ReRAM device not only suffers from spatial variation, but also temporal variation. As the cross-point structure is commonly used for ReRAM devices since it offers higher density and lower cost, the reliability issue of ReRAM becomes a constraint on preventing ReRAM being commercialized as large-scale memory.The thesis proposes models and analysis on three novel array-level structures to mitigate the problems existed in STT-RAM based memory technology from different aspects. The parallel shared 1TNJ structure decreases the cell area by rerouting the wires between the access transistor and the MTJ so that one transistor is responsible for multiple MTJs. On the other hand, the 1S1J cross-point structure uses selector as the access transistor for better scalability. Moreover, The FinFET device is introduced to cut off leakage current and reduce the cell area. The thesis also proposes a model for analyzing the reliability and variability issues in ReRAM based memory technology. The thesis provides a detailed analysis on different reliability issues, and proposes several mitigation solutions.

Download or read book Design Characterization and Modeling of Charge Trapping Nonvolatile Semiconductor Memory Devices written by Nathan Eichenlaub and published by ProQuest. This book was released on 2009 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt: Methods for optimizing the gate stack of charge trapping NVSM devices are also examined in this thesis. The performance of silicon-rich and stoichiometric nitride layers are compared, as well as multi-layer nitrides composed of a mixture of the two types. Stoichiometric silicon nitride (Si3N 4) is shown to improve retention in MANOS devices without sacrificing programming speed.

Download or read book Nonvolatile Semiconductor Memories written by Chenming Hu and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Advances in Non volatile Memory and Storage Technology written by Yoshio Nishi and published by Elsevier. This book was released on 2014-06-24 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. - Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping, and resistive random access memory - Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)

Download or read book Characterization and Modeling of Phase Change Memories written by Giovanni Betti Beneventi and published by LAP Lambert Academic Publishing. This book was released on 2012 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt: Non-Volatile Memory (NVM) technologies play a fundamental role in the semiconductor memory industry. The non-stop increasing of functionalitiesFinal Overview ”and performances of consumer electronic products such as digital cameras, MP3 players, smart-phones, computers, and solid-state hard disks, claims for a continuous improvement of memory capacity and features. However, Flash Memory technology, which plays the major role in the today NVM market, presents intrinsic physical constraints that hamper Flash further scaling. In this context, Phase-Change Memory (PCM) is an emerging NVM technology aiming to replace Flash in many applications. PCM indeed features superior performances, like outstanding scalability perspectives, faster programming, and higher endurance. For these reasons, PCM is a topic of ever increasing interests for the scientific community and for the microelectronics industry. "Characterization and Modeling of Phase-Change Memories" introduces the main features of the PCM technology, and discusses three case studies dealing with key aspects for the further development of advanced PCM, such as new materials, electrical characterizatio, and understanding of device physics.

Download or read book Characterization and Modeling of Charge Trapping and Retention in Novel Multi dielectric Nonvolatile Semiconductor Memory Devices written by Anirban Roy and published by . This book was released on 1989 with total page 604 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Technical Abstract Bulletin written by and published by . This book was released on 1982 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Testing Static Random Access Memories written by Said Hamdioui and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 231 pages. Available in PDF, EPUB and Kindle. Book excerpt: Testing Static Random Access Memories covers testing of one of the important semiconductor memories types; it addresses testing of static random access memories (SRAMs), both single-port and multi-port. It contributes to the technical acknowledge needed by those involved in memory testing, engineers and researchers. The book begins with outlining the most popular SRAMs architectures. Then, the description of realistic fault models, based on defect injection and SPICE simulation, are introduced. Thereafter, high quality and low cost test patterns, as well as test strategies for single-port, two-port and any p-port SRAMs are presented, together with some preliminary test results showing the importance of the new tests in reducing DPM level. The impact of the port restrictions (e.g., read-only ports) on the fault models, tests, and test strategies is also discussed. Features: -Fault primitive based analysis of memory faults, -A complete framework of and classification memory faults, -A systematic way to develop optimal and high quality memory test algorithms, -A systematic way to develop test patterns for any multi-port SRAM, -Challenges and trends in embedded memory testing.

Download or read book VLSI Design of Non Volatile Memories written by Giovanni Campardo and published by Springer Science & Business Media. This book was released on 2005-01-18 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI-Design for Non-Volatile Memories is intended for electrical engineers and graduate students who want to enter into the integrated circuit design world. Non-volatile memories are treated as an example to explain general design concepts. Practical illustrative examples of non-volatile memories, including flash types, are showcased to give insightful examples of the discussed design approaches. A collection of photos is included to make the reader familiar with silicon aspects. Throughout all parts of this book, the authors have taken a practical and applications-driven point of view, providing a comprehensive and easily understood approach to all the concepts discussed. Giovanni Campardo and Rino Micheloni have a solid track record of leading design activities at the STMicroelectronics Flash Division. David Novosel is President and founder of Intelligent Micro Design, Inc., Pittsburg, PA.

Download or read book Nonvolatile Memory Technologies with Emphasis on Flash written by Joe Brewer and published by John Wiley & Sons. This book was released on 2011-09-23 with total page 766 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presented here is an all-inclusive treatment of Flash technology, including Flash memory chips, Flash embedded in logic, binary cell Flash, and multilevel cell Flash. The book begins with a tutorial of elementary concepts to orient readers who are less familiar with the subject. Next, it covers all aspects and variations of Flash technology at a mature engineering level: basic device structures, principles of operation, related process technologies, circuit design, overall design tradeoffs, device testing, reliability, and applications.

Download or read book Nonvolatile Memory Design written by Hai Li and published by CRC Press. This book was released on 2017-12-19 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.