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Book Neutron Transmutation Doping of Semiconductor Materials

Download or read book Neutron Transmutation Doping of Semiconductor Materials written by Robert D. Larrabee and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.

Book Neutron transmutation doped silicon

Download or read book Neutron transmutation doped silicon written by J. Evans and published by . This book was released on 1990 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Neutron Transmutation Doped Silicon

Download or read book Neutron Transmutation Doped Silicon written by Jens Guldberg and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 493 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.

Book Neutron Transmutation Doping in Semiconductors

Download or read book Neutron Transmutation Doping in Semiconductors written by J. Meese and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.

Book Alchemy in the Modern Day

Download or read book Alchemy in the Modern Day written by Zachariah Nobel and published by . This book was released on 1994 with total page 51 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Production and Development of Neutron Transmutation Doped Silicon

Download or read book Production and Development of Neutron Transmutation Doped Silicon written by H. Herzer and published by . This book was released on 1984 with total page 13 pages. Available in PDF, EPUB and Kindle. Book excerpt: Considering the production of NTD-silicon our interest is focussing on market growth, application fields and questions like reactor capacity, costs and material quality. Market growth still is in a further steady increase and since IC application particularly CMOS devices are not expected to turn over to NTD-silicon there is plenty of reactor capacity available to follow the market increase in power device application.

Book Energy Research Abstracts

Download or read book Energy Research Abstracts written by and published by . This book was released on 1978 with total page 970 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Energy Research Abstracts

Download or read book Energy Research Abstracts written by and published by . This book was released on 1994 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiannual, with semiannual and annual indexes. References to all scientific and technical literature coming from DOE, its laboratories, energy centers, and contractors. Includes all works deriving from DOE, other related government-sponsored information, and foreign nonnuclear information. Arranged under 39 categories, e.g., Biomedical sciences, basic studies; Biomedical sciences, applied studies; Health and safety; and Fusion energy. Entry gives bibliographical information and abstract. Corporate, author, subject, report number indexes.

Book Scientific and Technical Aerospace Reports

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Optical Absorption of Impurities and Defects in Semiconducting Crystals

Download or read book Optical Absorption of Impurities and Defects in Semiconducting Crystals written by Bernard Pajot and published by Springer Science & Business Media. This book was released on 2012-08-28 with total page 532 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.