Download or read book Aluminum Gallium Nitride Nanostructures for High Efficiency Ultraviolet Light Sources written by Xianhe Liu and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: "To date, it has remained difficult to realize efficient deep ultraviolet (UV) light emitting devices. The underlying challenges include presence of dislocations and defects, inefficient doping for Al-rich AlGaN, and poor light extraction efficiency (LEE) due to in-plane transverse magnetic polarized emission. In this thesis, we have investigated molecular beam epitaxial growth and characterization of AlGaN nanostructures, as well as applications in UV LEDs and lasers, in order to address the performance bottleneck of conventional AlGaN-based planar deep ultraviolet (UV) light emitting devices. We firstly performed a systematic study on the molecular beam epitaxial growth and charge carrier transport properties of Mg-doped AlGaN with ~60% Al composition. High hole concentration of 8.7©71017 cm-3 and mobility values between 10 and 17 cm2/(V℗ʺs) were achieved at room temperature. Under optimal condition, a resistivity of 0.7 Î♭℗ʺcm was obtained. The conduction mechanism is identified to be hole conduction in the Mg impurity band. We also studied the improvement of LEE for transverse-magnetic (TM) polarized emission by using nanowire photonic crystals. By coupling in-plane TM-polarized emission to vertical emission at [GAMMA] point, LEE can be in principle enhanced to over 90% from below 10% in the conventional planar structure. Further considering the absorption in p-AlGaN contact layer and p-metal contact grid, LEE over 30% was predicted. To demonstrate the feasibility of nanowire photonic crystal, we developed the process of selective area epitaxy (SAE) of AlGaN nanowire and further demonstrate an LED at 279 nm. Regular and uniform AlGaN nanowire arrays with precisely controlled diameter and spacing were realized in the full compositional range. An IQE of 45% at room temperature was estimated with the presence of Al-rich shell suppressing surface nonradiative recombination. Excellent electrical and optical performance were achieved, including a small turn-on voltage of 4.4 V and an output power of ~0.93 W/cm2 at a current density of 252 A/cm2. We further studied AlN nanowall LEDs, which can exhibit IQE of ~ 60% at room-temperature, a low turn-on voltage of 7 V and higher current densities > 170 A/cm2 at 12 V. We have also demonstrated electrically pumped AlGaN nanowire lasers operating at 334 nm. Due to defect-free material quality, Anderson localization of light, and Al-rich shell structure, the optical loss and absorption were minimized and the differential gain was maximized, which resulted in ultralow threshold lasing of only a few tens of A/cm2. The studies in this thesis have revealed the advantages of molecular beam epitaxy (MBE) grown AlGaN nanostructures in addressing the current challenges with deep UV optoelectronic devices. Future research on the AlGaN nanostructures is finally proposed." --

Download or read book Nanostructuring for Nitride Light Emitting Diodes and Optical Cavities written by Kwai Hei Li and published by Springer. This book was released on 2015-12-08 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes the design and fabrication of novel nanostructures in III-nitride material systems. It introduces an inexpensive and ultra-efficient nanopatterning method – nanosphere lithography (NSL) – used to develop diversely functional nanostructures, including clover-shaped photonic crystals, nanorings, and nanolenses. Furthermore, the research findings previously distributed in various international scientific journals and conference papers are brought together and methodically presented in a unified form. The book is of interest to postgraduate students, university researchers, R&D engineers and scientists in the fields of nanoelectronics, optoelectronics and photonics.

Download or read book III nitride Devices and Nanoengineering written by Zhe Chuan Feng and published by World Scientific. This book was released on 2008 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.

Download or read book Indium Gallium Nitride Nanostructures for Optoelectronic Applications written by Anna Katharina Haab and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Non Equilibrium Dynamics of Semiconductors and Nanostructures written by Kong-Thon Tsen and published by CRC Press. This book was released on 2018-10-03 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: The advent of the femto-second laser has enabled us to observe phenomena at the atomic timescale. One area to reap enormous benefits from this ability is ultrafast dynamics. Collecting the works of leading experts from around the globe, Non-Equilibrium Dynamics of Semiconductors and Nanostructures surveys recent developments in a variety of areas in ultrafast dynamics. In eight authoritative chapters illustrated by more than 150 figures, this book spans a broad range of new techniques and advances. It begins with a review of spin dynamics in a high-mobility two-dimensional electron gas, followed by the generation, propagation, and nonlinear properties of high-amplitude, ultrashort strain solitons in solids. The discussion then turns to nonlinear optical properties of nanoscale artificial dielectrics, optical properties of GaN self-assembled quantum dots, and optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based semiconductors. Rounding out the presentation, the book examines ultrafast non-equilibrium electron dynamics in metal nanoparticles, monochromatic acoustic phonons in GaAs, and electromagnetically induced transparency in semiconductor quantum wells. With its pedagogical approach and practical, up-to-date coverage, Non-Equilibrium Dynamics of Semiconductors and Nanostructures allows you to easily put the material into practice, whether you are a seasoned researcher or new to the field.

Download or read book Zinc Oxide Nanostructures written by Magnus Willander and published by CRC Press. This book was released on 2014-07-22 with total page 225 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zinc oxide (ZnO) in its nanostructured form is emerging as a promising material with great potential for the development of many smart electronic devices. This book presents up-to-date information about various synthesis methods to obtain device-quality ZnO nanostructures. It describes both high-temperature (over 100 C) and low-temperature (under

Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2692 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nitride Semiconductors Volume 482 written by Materials Research Society. Meeting and published by . This book was released on 1998-04-20 with total page 1274 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is on recent experimental and theoretical progress in the rapidly growing field of III-V nitrides. Issues related to crystal growth (bulk and thin films), structure and microstructure, formation of defects, doping, alloying, formation of heterostructures, determination of physical properties and device fabrication and evaluation are addressed. Papers show much progress in the growth and understanding of III-V nitrides and in the production of optoelectronic devices based on these materials. Most exciting is the fact that light-emitting diodes and laser diodes have now reached amazing levels of performance which forecasts a revolution in lighting, optical storage, printing, and display technologies. Topics include: crystal growth- bulk growth, early stages of epitaxy; crystal growth- MOCVD; growth techniques - MBE and HVPE; novel substrates and growth techniques; structural properties; electronic properties; luminescence and recombination; characterization, elemental and stress analysis; physical modelling; device processing, implantation, annealing; device characterization, contacts, degradation; and injection laser diodes and applications.

Download or read book III Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Download or read book Ultraviolet LED Technology for Food Applications written by Tatiana Koutchma and published by Academic Press. This book was released on 2019-08-10 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultraviolet LED Technology for Food Applications: From Farms to Kitchens examines the next wave in the LED revolution and its ability to bring numerous advantages of UVC disinfection. As UVC LED-based light fixtures will become the driving force behind wider adoption, with potential use in the treatment of beverages, disinfection of food surfaces, packaging and other food contact and non-contact surfaces, this book presents the latest information, including LEDs unique properties and advantages and the developments and advances made in four areas of application, including produce production and horticulture, post-harvest and post processing storage, safety and point-of-use applications. Alternative opportunities to current practices of food production and processing that are more sophisticated and diverse are being intensively investigated in recent decades, things like Ultraviolet light (UV) irradiation. The effects of UVC LEDs against bacteria, viruses and fungi already have been demonstrated and reported, along with the first applications for disinfection of air, water and surface made for the "point-of-use" integration. Brings unique advantages of LEDs for foods from farm to kitchens Explores applications and advances in LEDs for horticulture, crops production, postharvest reservation and produce storage Investigates UV LEDs in food safety

Download or read book High Brightness Light Emitting Diodes written by and published by Academic Press. This book was released on 1998-02-09 with total page 489 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume 48in the Semiconductors and Semimetals series discusses the physics and chemistry of electronic materials, a subject of growing practical importance in the semiconductor devices industry. The contributors discuss the current state of knowledge and provide insight into future developments of this important field.

Download or read book Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines written by Munir H. Nayfeh and published by Elsevier. This book was released on 2018-06-29 with total page 604 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals and Applications of Nano Silicon in Plasmonics and Fullerines: Current and Future Trends addresses current and future trends in the application and commercialization of nanosilicon. The book presents current, innovative and prospective applications and products based on nanosilicon and their binary system in the fields of energy harvesting and storage, lighting (solar cells and nano-capacitor and fuel cell devices and nanoLEDs), electronics (nanotransistors and nanomemory, quantum computing, photodetectors for space applications; biomedicine (substance detection, plasmonic treatment of disease, skin and hair care, implantable glucose sensor, capsules for drug delivery and underground water and oil exploration), and art (glass and pottery). Moreover, the book includes material on the use of advanced laser and proximal probes for imaging and manipulation of nanoparticles and atoms. In addition, coverage is given to carbon and how it contrasts and integrates with silicon with additional related applications. This is a valuable resource to all those seeking to learn more about the commercialization of nanosilicon, and to researchers wanting to learn more about emerging nanosilicon applications. Features a variety of designs and operation of nano-devices, helping engineers to make the best use of nanosilicon Contains underlying principles of how nanomaterials work and the variety of applications they provide, giving those new to nanosilicon a fundamental understanding Assesses the viability of various nanoslicon devices for mass production and commercialization, thereby providing an important source of information for engineers

Download or read book Iii nitride Semiconductor Materials written by Zhe Chuan Feng and published by World Scientific. This book was released on 2006-03-20 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a

Download or read book Light Emitting Diodes written by Jinmin Li and published by Springer. This book was released on 2019-01-07 with total page 601 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive in scope, this book covers the latest progresses of theories, technologies and applications of LEDs based on III-V semiconductor materials, such as basic material physics, key device issues (homoepitaxy and heteroepitaxy of the materials on different substrates, quantum efficiency and novel structures, and more), packaging, and system integration. The authors describe the latest developments of LEDs with spectra coverage from ultra-violet (UV) to the entire visible light wavelength. The major aspects of LEDs, such as material growth, chip structure, packaging, and reliability are covered, as well as emerging and novel applications beyond the general and conventional lightings. This book, written by leading authorities in the field, is indispensable reading for researchers and students working with semiconductors, optoelectronics, and optics. Addresses novel LED applications such as LEDs for healthcare and wellbeing, horticulture, and animal breeding; Editor and chapter authors are global leading experts from the scientific and industry communities, and their latest research findings and achievements are included; Foreword by Hiroshi Amano, one of the 2014 winners of the Nobel Prize in Physics for his work on light-emitting diodes.

Download or read book Assessment of Solid State Lighting Phase Two written by National Academies of Sciences, Engineering, and Medicine and published by National Academies Press. This book was released on 2017-05-11 with total page 117 pages. Available in PDF, EPUB and Kindle. Book excerpt: The standard incandescent light bulb, which still works mainly as Thomas Edison invented it, converts more than 90% of the consumed electricity into heat. Given the availability of newer lighting technologies that convert a greater percentage of electricity into useful light, there is potential to decrease the amount of energy used for lighting in both commercial and residential applications. Although technologies such as compact fluorescent lamps (CFLs) have emerged in the past few decades and will help achieve the goal of increased energy efficiency, solid-state lighting (SSL) stands to play a large role in dramatically decreasing U.S. energy consumption for lighting. Since the publication of the 2013 National Research Council report Assessment of Advanced Solid-State Lighting, the penetration of SSL has increased dramatically, with a resulting savings in energy and costs that were foreshadowed by that study. What was not anticipated then is the dramatic dislocation and restructuring of the SSL marketplace, as cost reductions for light-emitting diode (LED) components reduced profitability for LED manufacturers. At the same time, there has been the emergence of new applications for SSL, which have the potential to create new markets and commercial opportunities for the SSL industry. Assessment of Solid-State Lighting, Phase Two discusses these aspects of changeâ€"highlighting the progress of commercialization and acceptance of SSL and reviewing the technical advances and challenges in achieving higher efficacy for LEDs and organic light-emitting diodes. This report will also discuss the recent trends in SSL manufacturing and opportunities for new applications and describe the role played by the Department of Energy (DOE) Lighting Program in the development of SSL.

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.