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Book All epitaxial  Long wavelength  Vertical cavity Surface emitting Lasers Using Bipolar Cascaded Active Region for High Differential Quantum Efficiency

Download or read book All epitaxial Long wavelength Vertical cavity Surface emitting Lasers Using Bipolar Cascaded Active Region for High Differential Quantum Efficiency written by Rintaro Koda and published by . This book was released on 2005 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the burst of the telecommunication market bubble, demands for bandwidth still seem to be growing as new applications are introduced. Optical fiber networks are capable of meeting such demand and long-wavelength vertical-cavity surface-emitting lasers (VCSELs) are attractive candidate for low cost light sources. Extensive researches resulted in dramatic improvements of the device performances with the number of different approaches such as wafer fusion, metamorphic, buried-tunnel-junction (BTJ), and all epitaxial approaches. Among them, all epitaxial VCSEL where all the components of device are grown in single growth is especially attractive for low cost application. Both DBR and the active region can be grown with AlInGaAs on InP substrate--this material system has been well developed over a couple of decade and can offer stable growth. However AlInGaAs DBR suffers from the fact that the maximum achievable reflectivity is lower than other DBRs. This can be compensated by using bipolar cascaded (BC) active region which provides higher gain. Moreover significantly higher differential quantum efficiency is achievable. The goal of this thesis was to investigate and develop practical 1.55 mu m VCSEL with cascaded active region. The scalability of BC VCSEL was investigated both theoretically and experimentally. The current confining aperture was developed using ion implantation. While continuous wave operation was not realized, the device with greater than 120% differential efficiency was demonstrated.

Book Advances in Optical and Photonic Devices

Download or read book Advances in Optical and Photonic Devices written by Ki Young Kim and published by BoD – Books on Demand. This book was released on 2010-01-01 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: The title of this book, Advances in Optical and Photonic Devices, encompasses a broad range of theory and applications which are of interest for diverse classes of optical and photonic devices. Unquestionably, recent successful achievements in modern optical communications and multifunctional systems have been accomplished based on composing “building blocks” of a variety of optical and photonic devices. Thus, the grasp of current trends and needs in device technology would be useful for further development of such a range of relative applications. The book is going to be a collection of contemporary researches and developments of various devices and structures in the area of optics and photonics. It is composed of 17 excellent chapters covering fundamental theory, physical operation mechanisms, fabrication and measurement techniques, and application examples. Besides, it contains comprehensive reviews of recent trends and advancements in the field. First six chapters are especially focused on diverse aspects of recent developments of lasers and related technologies, while the later chapters deal with various optical and photonic devices including waveguides, filters, oscillators, isolators, photodiodes, photomultipliers, microcavities, and so on. Although the book is a collected edition of specific technological issues, I strongly believe that the readers can obtain generous and overall ideas and knowledge of the state-of-the-art technologies in optical and photonic devices. Lastly, special words of thanks should go to all the scientists and engineers who have devoted a great deal of time to writing excellent chapters in this book.

Book Vertical cavity Surface emitting Lasers

Download or read book Vertical cavity Surface emitting Lasers written by and published by . This book was released on 2002 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Current Trends In Vertical Cavity Surface Emitting Lasers

Download or read book Current Trends In Vertical Cavity Surface Emitting Lasers written by Tien Pei Lee and published by World Scientific. This book was released on 1995-07-26 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: With significant progress made in recent years, vertical cavity surface emitting lasers (VCSELs) have emerged as potential lightwave sources with a variety of applications, including high speed optical interconnects, parallel data links, optical recording, 2-D scanning, and optical signal processing. This volume, which contains a collection of articles by outstanding experts on this topic, encompasses a broad discussion of the current trends in the development of VCSELs. Discussions include material growths, structure designs, processing methods, performance analysis, improvement strategies, and future prospects. The collection provides a comprehensive overview that may help newcomers to this field as well as engineers and researchers who are engaged in the research and development of this new exciting device family.

Book Dissertation Abstracts International

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2005 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Vertical cavity Surface emitting Lasers VIII

Download or read book Vertical cavity Surface emitting Lasers VIII written by Kent D. Choquette and published by SPIE-International Society for Optical Engineering. This book was released on 2004 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.

Book 2000 IEEE 17th International Semiconductor Laser Conference

Download or read book 2000 IEEE 17th International Semiconductor Laser Conference written by and published by IEEE Standards Office. This book was released on 2000 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Conference Proceedings

Download or read book Conference Proceedings written by and published by . This book was released on 2001 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Long Wavelength Vertical Cavity Surface Emitting Laser

Download or read book Long Wavelength Vertical Cavity Surface Emitting Laser written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Selectively oxidized vertical cavity lasers emitting near 1300 nm using InGaAsN quantum wells are reported for the first time which operate continuous wave below, at and above room temperature. The lasers employ two n-type Al.sub.0.94 Ga.sub.0.06 As/GaAs distributed Bragg reflectors each with a selectively oxidized current aperture adjacent to the active region, and the top output mirror contains a tunnel junction to inject holes into the active region. Continuous wave single mode lasing is observed up to 55.degree. C.

Book Advances in Vertical Cavity Surface Emitting Lasers

Download or read book Advances in Vertical Cavity Surface Emitting Lasers written by Connie J. Chang-Hasnain and published by . This book was released on 1997 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Visible Vertical Cavity Surface Emitting Lasers

Download or read book Visible Vertical Cavity Surface Emitting Lasers written by James Anthony Lott and published by . This book was released on 1993 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Novel Epitaxial Growth Technologies for Long Wavelength  1 1 1 5 Micron  Vertical Cavity Surface Emitting Lasers and Optical Switches for High Performance Optical Information Networks

Download or read book Novel Epitaxial Growth Technologies for Long Wavelength 1 1 1 5 Micron Vertical Cavity Surface Emitting Lasers and Optical Switches for High Performance Optical Information Networks written by and published by . This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The goal of this research program is to develop novel techniques for the epitaxial growth and fabrication of vertical-cavity surface-emitting laser structures with lasing wavelengths in the 1.1-1.5 micron regime. Special emphasis will be on the realization of 1300 nm VCSELs and monolithic VCSEL arrays that are useful for the parallel optical data links that will interconnect future computer networks, whose nodes may be distributed across a wide range of distances and are interconnected by optical fibers. The 1300 nm VCSELs will provide improved fiber transmission performance as well as a more unified technology platform for the different levels of the interconnection heirarchy. One goal is to design and demonstrate a practical 1300 nm VCSEL structure that can be grown by a single epitaxial growth on a convention, high quality GaAs substrate. These structures will use InGaAsN quantum wells, as well as GaAs/AlAs distributed Bragg reflector (DBR) mirrors with a large index difference, which reduces the total thickness to a tractable level that makes a single-growth approach possible. In this program, we will develop an optimum device design for the fabrication of these VCSEL structures, and we will integrate them into monolithic arrays. We will evaluate the performance of the VCSELs in parallel optical links as well as in VCSEL-based optical switching networks.

Book High power  High bandwidth  High temperature Long wavelength Vertical cavity Surface emitting Lasers

Download or read book High power High bandwidth High temperature Long wavelength Vertical cavity Surface emitting Lasers written by Manish Mehta and published by . This book was released on 2006 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fabricated devices demonstrate greater than 2 mW single mode output power at 20°C, 1.5 mW single mode output power at 70°C, 10 GHz 3-dB bandwidth at 20°C, 6 GHz 3-dB bandwidth at 70°C, and a maximum relaxation resonance peak of 8 GHz at 70°C by incorporating a single wafer-bonded GaAs/A1GaAs DBR, a AlInGaAs MQW active region, an InP/AlInAs TJ current aperture, and a TiO2/SiO2 output coupler.

Book GaAs Based Long Wavelength Vertical Cavity Surface Emitting Lasers

Download or read book GaAs Based Long Wavelength Vertical Cavity Surface Emitting Lasers written by Li Zhao and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Long wavelength GaAs-based vertical-cavity surfaceemitting lasers that operate in continuous wave mode at and above room temperature are demonstrated.The VCSELs employ a dilute-nitride GaInNAsSb/GaNAs multiple quantum well active region, two n-doped Al- GaAs/GaAs distributed Bragg reflectors and a tunnel junction. Typical devices have threshold current densities of 2 kA/cm2. Single mode operation was achieved from a 7 mm aperture device. The devices have 3 dB frequencies above 4 GHz.

Book Vertical cavity Surface emitting Laser Arrays

Download or read book Vertical cavity Surface emitting Laser Arrays written by Jack L. Jewell and published by . This book was released on 1994 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Highly Efficient Long wavelength Infrared  Step taper Active region Quantum Cascade Lasers

Download or read book Highly Efficient Long wavelength Infrared Step taper Active region Quantum Cascade Lasers written by Kevin Michael Oresick and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum cascade lasers (QCLs) are semiconductor lasers that emit in the mid- to far-infrared and employ intersubband transitions in multiple quantum-well structures. Conventionally, the active region of QCLs has consisted of quantum wells and barriers of fixed-alloy composition. That has led to severe carrier leakage from the upper-laser level and injector states, evidenced by strong temperature dependences of the device characteristics, which resulted in low values for wall-plug efficiency [eta]wp of CW-operating devices. We have devised in the past means for carrier-leakage suppression, and have recently derived a comprehensive carrier-leakage formalism that bridges the gap between theoretical and experimental values for the internal efficiency. Here we present a refinement of the comprehensive carrier-leakage formalism and employ it for comparing our band-engineered ~ 8 [mu]m-emitting QCL, so-called step-tapered active-region (STA), to a conventional ~ 8 [mu]m-emitting QCL. We find that the internal efficiency reaches a high value of ~ 73.6%, due to record-high injection- and laser-transition efficiencies. Experimentally we obtain a single-facet [eta]wp value of 10.6%, a record-high value for 8-11 Îơm-emitting QCLs grown by MOCVD. Then, by using both band- and interface-roughness (IFR)-scattering - engineering we designed an optimized 8.2 [mu]m-emitting STA-QCL that reaches a record-high injection efficiency of 89.5%. By minimizing the waveguide loss and raising the doping level the device reaches a record-high internal efficiency (80%) for ~ 8 [mu]m-emitting QCLs as well as a projected [eta]wp value of 11.2%. The studies are extended to devices of higher layer-interface quality, grown by two different techniques. As a result, we obtain [eta]wp values as high as 15.6 %. In addition, the optimized STA-QCL has a lower-level lifetime dominated by IFR scattering, which makes it amenable to further optimization via IFR engineering. Finally, we analyze an ~ 8 [mu]m-emitting QCLs that holds the world record [eta]wp value, primarily due to low voltages via the realization of photon-induced carrier transport. We find that the device has significant carrier leakage, and show that our optimized STA QCL can reach comparable [eta]wp values if high-quality interfaces are employed. We then derive ultimate limits for the [eta]wp value in the 7-11 [mu]m wavelength range.

Book Chemical Abstracts

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt: