Download or read book A Measurement of the Effect of Intrinsic Film Stress on the Overall Rate of Thermal Oxidation of Silicon written by J. K. Srivastava and published by . This book was released on 1985 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, in our laboratory more extensive intrinsic stress measurements have been made and these measurements will be reported separately. So while the existence of a compressive intrinsic Si02 film stress has been experimentally verified, the experimental verification of the effects of the stress on oxidation kinetics remains a matter of speculation within the various models. Along with the development of an intrinsic film stress due to the molar volume change during the oxidation of Si, a Si02 film density increase occurs and has been measured. We consider the intrinsic stress and density increases to have a common origin in the nature of the Si oxidation process on a single crystal Si surface. The present communication provides a rather direct experimental measurement of the effect of the compressive intrinsic film stress and/or oxide density on the Si oxidation kinetics. All the Si wafers used were lightly P doped n-type (100) oriented commercially available high quality single crystal Si slices.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1988 with total page 972 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thermal Oxide Growth on Silicon Intrinsic Stress and Silicon Cleaning Effects written by E. A. Irene and published by . This book was released on 1987 with total page 37 pages. Available in PDF, EPUB and Kindle. Book excerpt: This paper summarizes the experimental results and discusses the implications of recent research on two topics related to Si oxidation: mechanical stress effects; and the influence of impurities on the Si surface. For stress measurement, a double beam optical technique is used to measure the strain in the Si substrate due to the film stress. An intrinsic SiO2 stress is measured which increases with decreasing oxidation temperature. Controversy exists about whether the intrinsic stress affects transport of oxidant or the interface reaction; arguments for both views are presented. A combination of in-situ ellipsometry and contact angle measurements performed on a Si surface which is immersed in various liquid media has been successfully used to determine the role of HF in Si cleaning process. A fluorocarbon film was found to replace the removed SiO2, and the fluorocarbon renders the Si surface hydrophobic and amenable to the growth of a high quality SiO2 film for device applications. Keywords: Silicon, Silicon oxides.
Download or read book Semiconductor Integrated Circuit Processing Technology written by W. R. Runyan and published by Addison Wesley Publishing Company. This book was released on 1990 with total page 720 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government Reports Announcements Index written by and published by . This book was released on 1986-02 with total page 982 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Silicon written by Günther Harbeke and published by . This book was released on 1989 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Strained Si Heterostructure Field Effect Devices written by C.K Maiti and published by CRC Press. This book was released on 2007-01-11 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi
Download or read book Government Reports Annual Index written by and published by . This book was released on 1986 with total page 1336 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Government Reports Annual Index Keyword A L written by and published by . This book was released on 1986 with total page 1164 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Intrinsic SiO2 Film Stress Measurements on Thermally Oxidized Si written by E. Kobeda and published by . This book was released on 1986 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have investigated the effects of varying Si oxidation conditions on intrinsic film stress for Si02 films formed on Si. This study includes stress measurements on four Si orientations: (100), (110), (111), and (311); at oxidation temperatures ranging from 700-1100 C; wet (H20) vs. dry (02) oxidations for (100) and (111) surfaces; and the effects of post-oxidation annealing on stress. We find an orientation dependence for intrinsic stress which scales in the following manner: (110)> (311)> (100)> (111); a reduction in stress for wet vs. dry studies; and an even larger reduction for post-oxidation anneals. A recently proposed step model seems to account for the differences in stress with Si orientation. A number of Si oxidation models based on intrinsic stress are compared in their ability to describe the observed behavior, and we conclude that within the Deal-Grove oxidation model, the linear rate constant is strongly influenced by stress in the initial regime while stress is also likely to be important for thicker films.
Download or read book Extended Abstracts written by Electrochemical Society and published by . This book was released on 1987 with total page 852 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 2092 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Science Abstracts written by and published by . This book was released on 1985 with total page 2080 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Silicon Based MEMS Materials and Technologies written by Markku Tilli and published by Elsevier. This book was released on 2020-04-17 with total page 1028 pages. Available in PDF, EPUB and Kindle. Book excerpt: Handbook of Silicon Based MEMS Materials and Technologies, Third Edition is a comprehensive guide to MEMS materials, technologies, and manufacturing with a particular emphasis on silicon as the most important starting material used in MEMS. The book explains the fundamentals, properties (mechanical, electrostatic, optical, etc.), materials selection, preparation, modeling, manufacturing, processing, system integration, measurement, and materials characterization techniques of MEMS structures. The third edition of this book provides an important up-to-date overview of the current and emerging technologies in MEMS making it a key reference for MEMS professionals, engineers, and researchers alike, and at the same time an essential education material for undergraduate and graduate students. Provides comprehensive overview of leading-edge MEMS manufacturing technologies through the supply chain from silicon ingot growth to device fabrication and integration with sensor/actuator controlling circuits Explains the properties, manufacturing, processing, measuring and modeling methods of MEMS structures Reviews the current and future options for hermetic encapsulation and introduces how to utilize wafer level packaging and 3D integration technologies for package cost reduction and performance improvements Geared towards practical applications presenting several modern MEMS devices including inertial sensors, microphones, pressure sensors and micromirrors
Download or read book New Results on Low Temperature Thermal Oxidation of Silicon written by E. A. Irene and published by . This book was released on 1986 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt: The commonly accepted linear-parabolic oxidation model for the thermal oxidation of Si includes two rate processes in a steady state: reaction between Si and oxidant at the Si-Si02 interface; and transport of oxidant through the Si02 film. Based on available data, it is argued that the former process seems dominant for thin film growth in dry 02. A number of measured Si02 film and Si-Si02 interface measured properties are reported, as well as the variation of these properties with oxidation temperature and Si substrate orientation. These properties include; refractive index, density, intrinsic stress, interface fixed oxide charge and interface trapped charge. It is also observed that all of these properties display similar oxidation temperature and inert anneal behavior plus a complex orientation dependence. Through the use of a modified form for the interface reaction, a better understanding is obtained of both the origin of these measured properties, and new oxidation data taken on five Si orientations and at lower oxidation temperatures than previously reported.
Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2005 with total page 1218 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book JJAP written by and published by . This book was released on 1995 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt:
