Download or read book Zinc Oxide Thin Film Transistors by Radio Frequency Magnetron Sputtering written by Jiaye Huang and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Zinc Oxide Thin Film Transistors written by Divine Khan Ngwashi and published by LAP Lambert Academic Publishing. This book was released on 2011-05 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent oxide semiconducting films have continued to receive considerable attention, from a fundamental and application-based point of view, primarily because of their useful fundamental properties. Of particular interest is zinc oxide (ZnO), an n-type semiconductor that exhibits excellent optical, electrical, catalytic and gas-sensing properties, and has many applications in various fields. In this work, thin film transistor (TFT) arrays based on ZnO have been prepared by reactive radio frequency (RF) magnetron sputtering. The sputtering process was carried out at room temperature with no intentional heating. The aim of this is to prepare ZnO thin films with stable semiconducting electrical properties to be used as the active channel in TFTs; and to understand the role of intrinsic point defects in device performance and stability. The effect of oxygen (O2) adsorption on TFT device characteristics is also investigated. TFTs incorporating silicon dioxide, and different high-k dielectrics are also investigated.

Download or read book Radio Frequency Sputtered Zinc Oxide Thin Film Transistors written by 林雨德 and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Manufacturing Gallium Doped ZnO Thin Films Suitable for Use in Thin Film Transistors Using Unbalanced Magnetron Sputtering written by Timothy Russell Jones and published by . This book was released on 2013 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium doped zinc oxide (GZO) thin films were deposited onto Si (100) substrates. Depositions were performed at relatively low temperatures suitable for use in manufacturing thin films on plastic substrates. Substrates were thermally oxidized, and then thin films were deposited via radio frequency (RF) unbalanced magnetron sputtering. ZnO thin films were also sputtered in order to act as a seed layer for growing nanostructures by the hydrothermal method. Sputtering parameters evaluated independently include pressure, gas composition, power, temperature and the presence of an external magnetic field. Scanning electron microscopy (SEM) was performed on hydrothermally produced samples. Sputtered films used to compare sputtering parameters were grown at thicknesses of 33-64 nm as measured by ellipsometry. The GZO sputtering target had a 5% gallium content, which was deposited on the thin films. This was confirmed by X-ray Photoelectron Spectroscopy (XPS). Films were also evaluated using Raman spectroscopy and four-point probe terminal sensing. Using a comparison of the X-ray diffraction (XRD) of the films, it was possible to evaluate the sputtering parameters in order to minimize their crystallite size. It was calculated that the optimum power to apply to the target in order to minimize crystallite size was 128W. Films also minimized crystallite size by several other independent factors, such as not being in the presence of oxygen, being in the presence of an external magnetic field, being at a higher temperature, or being at a higher pressure during sputtering.

Download or read book An Investigation of the Performance and Stability of Zinc Oxide Thin film Transistors and the Role of High k Dielectrics written by Ngwashi Divine Khan and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent oxide semiconducting films have continued to receive considerable attention, from a fundamental and application-based point of view, primarily because of their useful fundamental properties. Of particular interest is zinc oxide (ZnO), an n-type semiconductor that exhibits excellent optical, electrical, catalytic and gas-sensing properties, and has many applications in various fields. In this work, thin film transistor (TFT) arrays based on ZnO have been prepared by reactive radio frequency (RF) magnetron sputtering. Prior to the TFT fabrication, ZnO layers were sputtered on to glass and silicon substrates, and the deposition parameters optimised for electrical resistivities suitable for TFT applications. The sputtering process was carried out at room temperature with no intentional heating. The aim of this work is to prepare ZnO thin films with stable semiconducting electrical properties to be used as the active channel in TFTs; and to understand the role of intrinsic point defects in device performance and stability. The effect of oxygen (O2) adsorption on TFT device characteristics is also investigated. The structural quality of the material (defect type and concentration), electrical and optical properties (transmission/absorption) of semiconductor materials are usually closely correlated. Using the Vienna ab-initio simulation package (VASP), it is predicted that O2 adsorption may influence film transport properties only within a few atomic layers beneath the adsorption site. These findings were exploited to deposit thin films that are relatively stable in atmospheric ambient with improved TFT applications. TFTs incorporating the optimised layer were fabricated and demonstrated very impressive performance metrics, with effective channel mobilities as high as 30 cm2/V-1s-1, on-off current ratios of 107 and sub-threshold slopes of 0.9? 3.2 V/dec. These were found to be dependent on film thickness (~15? 60 nm) and the underlying dielectric (silicon dioxide (SiO2), gadolinium oxide (Gd2O3), yttrium oxide (Y2O3) and hafnium oxide (HfO2)). In this work, prior to sputtering the ZnO layer (using a ZnO target of 99.999 % purity), the sputtering chamber was evacuated to a base pressure ~4 x 10-6 Torr. Oxygen (O2) and argon (Ar) gas (with O2/Ar ratio of varying proportions) were then pumped into the chamber and the deposition process optimised by varying the RF power between 25 and 500 W and the O2/Ar ratio between 0.010 to 0.375. A two-level factorial design technique was implemented to test specific parameter combinations (i.e. RF power and O2/Ar ratio) and then statistical analysis was utilised to map out the responses. The ZnO films were sputtered on glass and silicon substrates for transparency and resistivity measurements, and TFT fabrication respectively. For TFT device fabrication, ZnO films were deposited onto thermally-grown silicon dioxide (SiO2) or a high-k dielectric layer (HfO2, Gd2O3 and Y2O3) deposited by a metal-organic chemical deposition (MOCVD) process. Also, by using ab initio simulation as implemented in the?Vienna ab initio simulation package (VASP)?, the role of oxygen adsorption on the electrical stability of ZnO thin film is also investigated. The results indicate that O2 adsorption on ZnO layers could modify both the electronic density of states in the vicinity of the Fermi level and the band gap of the film. This study is complemented by studying the effects of low temperature annealing in air on the properties of ZnO films. It is speculated that O2 adsorption/desorption at low temperatures (150? 350 0C) induces variations in the electrical resistance, band gap and Urbach energy of the film, consistent with the trends predicted from DFT results.

Download or read book Optical Properties of Zinc Oxide ZnO Thin Film by RF Magnetron Sputtering written by Khairul Nadzrin Rosli and published by . This book was released on 2006 with total page 67 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Drain Current Modeling of Thin film Zinc oxide Field Effect Transistors of Various Fabrication Methods written by Daniel Wade Evans and published by . This book was released on 2013 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Properties of Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering written by ld Siti Maryam Ghazali and published by . This book was released on 2009 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Structural and Electrical Properties of Radio Frequency Sputtered Fluorine Doped Zinc Oxide Films written by Adam S. Bowen and published by . This book was released on 2009 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: Deposits, by radio frequency magnetron sputtering disposition, thin films of fluorine doped zinc oxide onto polyethylene naphthalate and glass substrates at room temperature. Studies of the effects of post disposition annealing by argon and a gas mixture of argon and hydrogen on the structural and electrical properties of the films deposited on polyethylene naphthalate and glass.

Download or read book Reactive High Power Impulse Magnetron Sputtering of Zinc Oxide for Thin Film Transistor Applications written by Amber Nicole Reed and published by . This book was released on 2015 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zinc oxide (ZnO) is an emerging thin film transistor (TFT) material for transparent flexible displays and sensor technologies, where low temperature synthesis of highly crystallographically ordered films over large areas is critically needed. This study maps plasma assisted synthesis characteristics, establishes polycrystalline ZnO growth mechanisms and demonstrates for the first time low-temperature and scalable deposition of semiconducting grade ZnO channels for TFT applications using reactive high power impulse magnetron sputtering (HiPIMS). Plasma parameters, including target currents, ion species and their energies were measured at the substrate surface location with mass spectroscopy as a function of pressure and applied voltage during HiPIMS of Zn and ZnO targets in O2/Ar. The results were correlated to film microstructure development investigated with x-ray diffraction, atomic force microscopy, scanning electron microscopy and transmission electron microscopy which helped establish film nucleation and growth mechanisms. Competition for nucleation by (100), (101) and (002) oriented crystallites was identified at the early stages of film growth, which can result in a layer of mixed crystal orientation at the substrate interface, a microstructural feature that is detrimental to TFT performance due to increased charge carrier scattering in back-gated TFT devices. The study revealed that nucleation of both (100) and (101) orientations can be suppressed by increasing the plasma density while decreasing ion energy. After the initial nucleation layer, the microstructure evolves to strongly textured with the (002) crystal plane oriented parallel to the substrate surface. The degree of (002) alignment was pressure-dependent with lower deposition pressures resulting in films with (002) alignment less than 3.3°, a trend attributed to less energy attenuation of the low energy (2- 6 eV) Ar+, O+, and O2+ ions observed with mass spectrometry measurements. At pressures of 7 mTorr and lower, a second population of ionized gas (Ar+, O+, and O2+) species with energies up to 50 eV appeared. The presence of higher energy ions corresponded with a bimodal distribution of ZnO grain sizes, confirming that high energy bombardment has significant implications on microstructural uniformity during large area growth. Based on the established correlations between process parameters, plasma characteristics, film structure and growth mechanisms, optimum deposition conditions for (002) oriented nanocrystalline ZnO synthesis at 150 °C were identified and demonstrated for both silicon oxide wafers of up to 4 inch diameter and on flexible polymer (Kapton) substrates. The feasibility of the low temperature processing of ZnO films for TFT applications was verified by preliminary tests with back-gated device prototypes. Directions of future research are outlined to further develop this low temperature growth method and apply results of this study for ZnO applications in semiconductor devices.

Download or read book Handbook of Zinc Oxide and Related Materials written by Zhe Chuan Feng and published by CRC Press. This book was released on 2012-09-26 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: Through their application in energy-efficient and environmentally friendly devices, zinc oxide (ZnO) and related classes of wide gap semiconductors, including GaN and SiC, are revolutionizing numerous areas, from lighting, energy conversion, photovoltaics, and communications to biotechnology, imaging, and medicine. With an emphasis on engineering a

Download or read book Development of Zinc Tin Oxide based Transparent Thin film Transistors written by Hai Q. Chiang and published by . This book was released on 2003 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt: The focus of this thesis involves development of highly transparent, n-channel, accumulation- mode thin-film transistors employing a zinc tin oxide (ZTO) channel layer. ZTO-based transparent thin-film transistors (TTFTs) show improved device performance compared to ZnO-based TTFTs. An estimated peak effective mobility for these devices as high as ~100 cm2 V−1sec−1 has been observed, although effective mobilities in the range of 20-50 cm2V−1sec−1 are more common. This performance inconsistency may be due, in part, to the large device dimensions employed in developmental test structures and/or to shadow mask misalignment. Typical drain current on-to-off ratios are> 106. Variation in the post-deposition annealing cycle is found to be an effective means to control the threshold voltage and to improve device performance. Optical characterization of these devices indicates ~84% transparency in the visible spectrum as viewed through the source/drain. Another aspect of this thesis research involves the utilization and extension of quantitative polycrystalline TFT device models with the intention of guiding the design and optimization of future TFTs. In particular, subthreshold conduction is assessed in order to estimate the bulk (and/or grain boundary) and interface trap densities. This leads to a consideration of threshold voltage and channel mobility extraction, as well as establishment of the turn-on voltage, V[subscript turn-on] Finally, a third aspect of this thesis research involves a new radio-frequency (RF) magnetron sputtering system, custom-designed and constructed at OSU by Chris Tasker. Contributions to the development of this tool include assisting in the design and implementation of the computer-controlled interlocks utilized for operation of the tool. The experimental flexibility of this new tool is discussed with respect to its applicability in the design and fabrication of future TTFTS.

Download or read book Transparent Electronics written by Elvira Fortunato and published by . This book was released on with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Oxide Thin Films Multilayers and Nanocomposites written by Paolo Mele and published by Springer. This book was released on 2015-03-26 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive overview of the science of nanostructured oxides. It details the fundamental techniques and methodologies involved in oxides thin film and bulk growth, characterization and device processing, as well as heterostructures. Both, experts in oxide nanostructures and experts in thin film heteroepitaxy, contribute the interactions described within this book.

Download or read book Transparent Oxide Electronics written by Pedro Barquinha and published by John Wiley & Sons. This book was released on 2012-03-15 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transparent electronics is emerging as one of the most promising technologies for the next generation of electronic products, away from the traditional silicon technology. It is essential for touch display panels, solar cells, LEDs and antistatic coatings. The book describes the concept of transparent electronics, passive and active oxide semiconductors, multicomponent dielectrics and their importance for a new era of novel electronic materials and products. This is followed by a short history of transistors, and how oxides have revolutionized this field. It concludes with a glance at low-cost, disposable and lightweight devices for the next generation of ergonomic and functional discrete devices. Chapters cover: Properties and applications of n-type oxide semiconductors P-type conductors and semiconductors, including copper oxide and tin monoxide Low-temperature processed dielectrics n and p-type thin film transistors (TFTs) – structure, physics and brief history Paper electronics – Paper transistors, paper memories and paper batteries Applications of oxide TFTs – transparent circuits, active matrices for displays and biosensors Written by a team of renowned world experts, Transparent Oxide Electronics: From Materials to Devices gives an overview of the world of transparent electronics, and showcases groundbreaking work on paper transistors

Download or read book Zinc Compounds Advances in Research and Application 2012 Edition written by and published by ScholarlyEditions. This book was released on 2012-12-26 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zinc Compounds—Advances in Research and Application: 2012 Edition is a ScholarlyBrief™ that delivers timely, authoritative, comprehensive, and specialized information about Zinc Compounds in a concise format. The editors have built Zinc Compounds—Advances in Research and Application: 2012 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Zinc Compounds in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Zinc Compounds—Advances in Research and Application: 2012 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Download or read book Advanced Nanoelectronics written by Razali Ismail and published by CRC Press. This book was released on 2018-09-03 with total page 459 pages. Available in PDF, EPUB and Kindle. Book excerpt: While theories based on classical physics have been very successful in helping experimentalists design microelectronic devices, new approaches based on quantum mechanics are required to accurately model nanoscale transistors and to predict their characteristics even before they are fabricated. Advanced Nanoelectronics provides research information on advanced nanoelectronics concepts, with a focus on modeling and simulation. Featuring contributions by researchers actively engaged in nanoelectronics research, it develops and applies analytical formulations to investigate nanoscale devices. The book begins by introducing the basic ideas related to quantum theory that are needed to better understand nanoscale structures found in nanoelectronics, including graphenes, carbon nanotubes, and quantum wells, dots, and wires. It goes on to highlight some of the key concepts required to understand nanotransistors. These concepts are then applied to the carbon nanotube field effect transistor (CNTFET). Several chapters cover graphene, an unzipped form of CNT that is the recently discovered allotrope of carbon that has gained a tremendous amount of scientific and technological interest. The book discusses the development of the graphene nanoribbon field effect transistor (GNRFET) and its use as a possible replacement to overcome the CNT chirality challenge. It also examines silicon nanowire (SiNW) as a new candidate for achieving the downscaling of devices. The text describes the modeling and fabrication of SiNW, including a new top-down fabrication technique. Strained technology, which changes the properties of device materials rather than changing the device geometry, is also discussed. The book ends with a look at the technical and economic challenges that face the commercialization of nanoelectronics and what universities, industries, and government can do to lower the barriers. A useful resource for professionals, researchers, and scientists, this work brings together state-of-the-art technical and scientific information on important topics in advanced nanoelectronics.