Download or read book Zinc diffusion in tellurium doped gallium antimonide written by Gavin John Conibeer and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Self and Zinc Diffusion in Gallium Antimonide written by Samuel Piers Nicols and published by . This book was released on 2002 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 1460 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Download or read book Self and Zinc Diffusion in Gallium Antimonide written by and published by . This book was released on 2002 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technological age has in large part been driven by the applications of semiconductors, and most notably by silicon. Our lives have been thoroughly changed by devices using the broad range of semiconductor technology developed over the past forty years. Much of the technological development has its foundation in research carried out on the different semiconductors whose properties can be exploited to make transistors, lasers, and many other devices. While the technological focus has largely been on silicon, many other semiconductor systems have applications in industry and offer formidable academic challenges. Diffusion studies belong to the most basic studies in semiconductors, important from both an application as well as research standpoint. Diffusion processes govern the junctions formed for device applications. As the device dimensions are decreased and the dopant concentrations increased, keeping pace with Moore's Law, a deeper understanding of diffusion is necessary to establish and maintain the sharp dopant profiles engineered for optimal device performance. From an academic viewpoint, diffusion in semiconductors allows for the study of point defects. Very few techniques exist which allow for the extraction of as much information of their properties. This study focuses on diffusion in the semiconductor gallium antimonide (GaSb). As will become clear, this compound semiconductor proves to be a powerful one for investigating both self- and foreign atom diffusion. While the results have direct applications for work on GaSb devices, the results should also be taken in the broader context of III-V semiconductors. Results here can be compared and contrasted to results in systems such as GaAs and even GaN, indicating trends within this common group of semiconductors. The results also have direct importance for ternary and quaternary semiconductor systems used in devices such as high speed InP/GaAsSb/InP double heterojunction bipolar transistors (DHBT) [Dvorak, (2001)]. Many of the findings which will be reported here were previously published in three journal articles. Hartmut Bracht was the lead author on two articles on self-diffusion studies in GaSb [Bracht, (2001), (2000)], while this report's author was the lead author on Zn diffusion results [Nicols, (2001)]. Much of the information contained herein can be found in those articles, but a more detailed treatment is presented here.
Download or read book Numerical Study of Segregation and Melt Flow in Tellurium Doped Gallium Antimonide written by Michael J. Vogel and published by . This book was released on 1997 with total page 49 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Lasers and Masers written by and published by . This book was released on 1966 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects in Semiconductors 17 written by Helmut Heinrich and published by Trans Tech Publications. This book was released on 1994 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive issue presents 297 papers that cover a broad range of topics in the fundamental science of imperfections in semiconductor materials, including the creation and/or origin, structure, electronic, optical, thermodynamical and chemical properties of defects, often also with strong relevance to technological problems in semiconductor devices.
Download or read book Electrical Properties of Zinc and Tellurium Doped Single Crystal Gallium Phosphide written by James D. Penar and published by . This book was released on 1971 with total page 27 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using the van der Pauw method, Hall and resistivity measurements have been made on Zn- and Te-doped, epitaxially grown, single-crystal GaP. The measurements were made in the temperature range from 4 to 300K in the Zn-doped samples, and from 78 to 300K in the Te-doped samples. Room-temperature carrier concentrations ranged from 7 x 10 to the 15th power to 7 x 10 to the 18th power/cc in Zn-doped GaP and 4 x 10 to the 17th power to 2.7 x 10 to the 18th power/cc in Te-doped GaP. Variations of the ionization energies of Zn and Te with impurity concentration were determined from an analysis of the data. Room-temperature hole mobility in Zn-doped GaP varied from 60 to 100 sq cm/V-sec, and in Te-doped GaP from 11 to 91 sq cm/V-sec. The temperature dependence and magnitude of the mobility for both dopants are in good agreement with the calculated values of mobility due to scattering by acoustical and polar optical phonons at high temperatures. for by the mechanism of charged impurity scattering alone. The resistivity measurements of Zn-doped GaP below 78K show that GaP behaves as impure Ge does in the impurity-band conduction range. (Author).
Download or read book Soviet Physics Solid State written by and published by . This book was released on 1973-07 with total page 726 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Soviet Physics written by and published by . This book was released on 1981 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Lasers and Masers a Continuing Bibliography written by United States. National Aeronautics and Space Administration and published by . This book was released on 1965 with total page 566 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book BTL Talks and Papers written by Bell Telephone Laboratories, inc. Technical Information Libraries and published by . This book was released on 1973 with total page 876 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Applied Science Technology Index written by and published by . This book was released on 1996 with total page 1116 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metals Abstracts written by and published by . This book was released on 1983 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1971 with total page 1022 pages. Available in PDF, EPUB and Kindle. Book excerpt: NSA is a comprehensive collection of international nuclear science and technology literature for the period 1948 through 1976, pre-dating the prestigious INIS database, which began in 1970. NSA existed as a printed product (Volumes 1-33) initially, created by DOE's predecessor, the U.S. Atomic Energy Commission (AEC). NSA includes citations to scientific and technical reports from the AEC, the U.S. Energy Research and Development Administration and its contractors, plus other agencies and international organizations, universities, and industrial and research organizations. References to books, conference proceedings, papers, patents, dissertations, engineering drawings, and journal articles from worldwide sources are also included. Abstracts and full text are provided if available.
Download or read book Bell Laboratories Talks and Papers written by Bell Telephone Laboratories, inc. Libraries and Information Systems Center and published by . This book was released on 1974 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Comprehensive Nuclear Materials written by and published by Elsevier. This book was released on 2020-07-22 with total page 4871 pages. Available in PDF, EPUB and Kindle. Book excerpt: Materials in a nuclear environment are exposed to extreme conditions of radiation, temperature and/or corrosion, and in many cases the combination of these makes the material behavior very different from conventional materials. This is evident for the four major technological challenges the nuclear technology domain is facing currently: (i) long-term operation of existing Generation II nuclear power plants, (ii) the design of the next generation reactors (Generation IV), (iii) the construction of the ITER fusion reactor in Cadarache (France), (iv) and the intermediate and final disposal of nuclear waste. In order to address these challenges, engineers and designers need to know the properties of a wide variety of materials under these conditions and to understand the underlying processes affecting changes in their behavior, in order to assess their performance and to determine the limits of operation. Comprehensive Nuclear Materials, Second Edition, Seven Volume Set provides broad ranging, validated summaries of all the major topics in the field of nuclear material research for fission as well as fusion reactor systems. Attention is given to the fundamental scientific aspects of nuclear materials: fuel and structural materials for fission reactors, waste materials, and materials for fusion reactors. The articles are written at a level that allows undergraduate students to understand the material, while providing active researchers with a ready reference resource of information. Most of the chapters from the first Edition have been revised and updated and a significant number of new topics are covered in completely new material. During the ten years between the two editions, the challenge for applications of nuclear materials has been significantly impacted by world events, public awareness, and technological innovation. Materials play a key role as enablers of new technologies, and we trust that this new edition of Comprehensive Nuclear Materials has captured the key recent developments. Critically reviews the major classes and functions of materials, supporting the selection, assessment, validation and engineering of materials in extreme nuclear environments Comprehensive resource for up-to-date and authoritative information which is not always available elsewhere, even in journals Provides an in-depth treatment of materials modeling and simulation, with a specific focus on nuclear issues Serves as an excellent entry point for students and researchers new to the field
