Download or read book Zinc Diffusion in Intrinsic and Heavily Doped Gallium Arsenide written by Andrew Chi-mo Wang and published by . This book was released on 1970 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Analytical Study of Zinc Diffusion in Gallium Arsenide and the Electrical Properties of the Resulting Diffused Layers written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1964 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt: This study undertakes: first, to establish the relationship of these anomalous profiles to the diffusion equation; second, to calculate the relationship among the parameters of the zinc-diffused layers; and third, to measure the resistivity of GaAs as a function of zinc concentration. The results of this study provide: first, a procedure for calculating concentration profiles for various surface concentrations for a system such as zinc in GaAs when only two experimentally measured profiles are known; second, design data concerning the electrical properties of the zinc-diffused layers; and third, measurements of resistivity as a function of zinc concentration in heavily doped GaAs.
Download or read book Tin and Zinc Diffusion Into Gallium Arsenide from Doped Silicon Dioxide Layers written by Waldemar von Münch and published by . This book was released on 1966 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Channeling Studies of the Location of Zinc in Gallium arsenide written by Kurt Karl Christenson and published by . This book was released on 1989 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The diffusion of zinc in GaAs is highly anomalous in that the diffusion coefficient (D) is proportional to the zinc concentration squared in marked contrast to Fick's law which predicts that D is concentration independent. D is also very sensitive to the ambient conditions during diffusion, particularly the arsenic overpressure and the presence of other doping species. Further, heavy zinc doping can increase the self diffusion rates for gallium and aluminum by 10$sp5$ and is thus useful for selectively disordering GaAs/GaAlAs layer structures. The diffusion mechanisms involved are poorly understood, particularly the experimental finding that the column V sites (As, P and Sb) are not disordered. We believe that the anomalous nature can be explained by combining the theories of R. L. Longini (1962) on the effect of the hole density on the interstitial population and of K. Weiser (1962) on the effect of the charge state of an interstitial on the diffusion activation energy. To test our hypothesis, we have located the position of the zinc in the GaAs lattice with the ALCHEMI technique (Atom Location by CHanneling Enhanced MIcroanalysis) in a Transmission Electron Microscope (TEM). This required substantial enhancements to the x-ray microanalytic abilities of the TEM along with an improved understand of the nature of the illumination in the immersion lens of a TEM, all of which are discussed. Our results indicate that, within the experimental error, all of the zinc occupies the gallium sites which is consistent with our hypothesis. Further research involving TEM, synchrotron, diffusion and device studies are also suggested.
Download or read book Ion Implantation in Semiconductors written by Susumu Namba and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.
Download or read book Stanford University Electronics Research Review written by and published by . This book was released on 1970 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Includes brief descriptions of projects, listings of contracts and grant support, and listings of publications.
Download or read book Diffusion Solubility and Distribution Coefficient of Zinc in Gallium Arsenide and Gallium Phosphide written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1963 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiotracer Zn65 was vapor diffused in GaAs and GaP single crystals in closed, evacuated quartz ampoules. The solubilities and diffusion profiles were obtained over the temperature range 700 to 1100 C. The solubility data were analyzed by assuming Zn-GaAs and Zn-GaP to be binary systems and considering the transfer of neutral Zn from the liquid to the solid where some Zn atoms become ionized acceptors. The solubilities and distribution coefficients of Zn in these two semiconductor were calculated as functions of temperature up to the melting point of the solvents. The experimentally measured diffusion profile exhibit a steep front for Zn in GaAs above 700 C and for Zn in GaP above 900 C. Application of the Boltzmann-Matano method to these profiles shows that the diffusion coefficient is strongly concentration-dependent. A precise evaluation of this dependence was obtained from isoconcentration diffusions performed at a fixed temperature: 900 C for Zn in GaAs and 1000 C for Zn in GaP. (Author).
Download or read book Defect Control in Semiconductors written by K. Sumino and published by Elsevier. This book was released on 2012-12-02 with total page 817 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc.The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.
Download or read book Ninth Annual Technical Report July 1969 to June 1970 written by Stanford University. Center for Materials Research and published by . This book was released on 1970 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Effects of Ion implanted Gallium Arsenic and Phosphorus on the Diffusion of Ion implanted Zinc in Gallium Arsenide Phosphide written by Edward Bryant Stoneham and published by . This book was released on 1975 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide and Related Compounds 1992 Proceedings of the 19th INT Symposium 28 September 2 October 1992 Karuizawa Japan written by Ikegami and published by CRC Press. This book was released on 1993-01-01 with total page 1002 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.
Download or read book Rapid Thermal Processing of Zinc written by Daniel Mark Dobkin and published by . This book was released on 1984 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diffusion Solubility and Distribution Coefficient of Zinc in Gallium Arsenide and Galium Phosphide written by Leroy Li-gong Chang and published by . This book was released on 1963 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects and Impurities in Silicon Materials written by Yutaka Yoshida and published by Springer. This book was released on 2016-03-30 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
Download or read book Design and Realization of Novel GaAs Based Laser Concepts written by Tim David Germann and published by Springer Science & Business Media. This book was released on 2013-02-26 with total page 157 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor heterostructures represent the backbone for an increasing variety of electronic and photonic devices, for applications including information storage, communication and material treatment, to name but a few. Novel structural and material concepts are needed in order to further push the performance limits of present devices and to open up new application areas. This thesis demonstrates how key performance characteristics of three completely different types of semiconductor lasers can be tailored using clever nanostructure design and epitaxial growth techniques. All aspects of laser fabrication are discussed, from design and growth of nanostructures using metal-organic vapor-phase epitaxy, to fabrication and characterization of complete devices.
Download or read book Gallium Self diffusion in Gallium Arsenide written by and published by . This book was released on 1996 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ga self-diffusion was studied with secondary-ion mass spectroscopy in 69GaAs/71GaAs isotope heterostructures grown by molecular beam epitaxy on GaAs substrates. Results show that the Ga self- diffusion coefficient in intrinsic GaAs can be described accurately with D = (43"25 cm2s−1)exp( -4.24"0.06 eV/k{sub B}T) over 6 orders of magnitude between 800 and 1225 C under As-rich condition. Experimental results combined with theoretical calculations strongly suggest Ga vacancy being the dominant native defect controlling the diffusion. No significant doping effects were observed in samples where the substrates were doped with Te up to 4x1017cm−3 or Zn up to 1x1019cm−3.
Download or read book Zinc Diffusion in Gallium Arsenide with a Moving Dislocation Band written by He Bong Kim and published by . This book was released on 1965 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
