Download or read book Wide Bandgap Semiconductor Based Micro Nano Devices written by Jung-Hun Seo and published by MDPI. This book was released on 2019-04-25 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.

Download or read book Wide Bandgap Semiconductor Based Micro Nano Devices written by Jung-Hun Seo and published by . This book was released on 2019 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.

Download or read book Micro and Nanotechnology of Wide Bandgap Semiconductors written by Anna B Piotrowska and published by Mdpi AG. This book was released on 2021-12-20 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well 'green' power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective - Area Metalorganic Vapour - Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices.

Download or read book Wide Bandgap Semiconductor based Electronics written by Fan Ren and published by . This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications. This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development of materials and devices in these systems. The book is an essential reference for researchers and practitioners in the field of wide bandgap semiconductors and power electronics, and valuable supplementary reading for advanced courses in these areas." -- Prové de l'editor.

Download or read book Semiconductor Nanostructures for Optoelectronic Devices written by Gyu-Chul Yi and published by Springer Science & Business Media. This book was released on 2012-01-13 with total page 347 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.

Download or read book Wide Band Gap Semiconductor Nanowires 1 written by Vincent Consonni and published by John Wiley & Sons. This book was released on 2014-08-08 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanisms of ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices.

Download or read book Vacuum Nanoelectronic Devices written by Anatoliy Evtukh and published by John Wiley & Sons. This book was released on 2016-03-16 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introducing up-to-date coverage of research in electron field emission from nanostructures, Vacuum Nanoelectronic Devices outlines the physics of quantum nanostructures, basic principles of electron field emission, and vacuum nanoelectronic devices operation, and offers as insight state-of-the-art and future researches and developments. This book also evaluates the results of research and development of novel quantum electron sources that will determine the future development of vacuum nanoelectronics. Further to this, the influence of quantum mechanical effects on high frequency vacuum nanoelectronic devices is also assessed. Key features: • In-depth description and analysis of the fundamentals of Quantum Electron effects in novel electron sources. • Comprehensive and up-to-date summary of the physics and technologies for THz sources for students of physical and engineering specialties and electronics engineers. • Unique coverage of quantum physical results for electron-field emission and novel electron sources with quantum effects, relevant for many applications such as electron microscopy, electron lithography, imaging and communication systems and signal processing. • New approaches for realization of electron sources with required and optimal parameters in electronic devices such as vacuum micro and nanoelectronics. This is an essential reference for researchers working in terahertz technology wanting to expand their knowledge of electron beam generation in vacuum and electron source quantum concepts. It is also valuable to advanced students in electronics engineering and physics who want to deepen their understanding of this topic. Ultimately, the progress of the quantum nanostructure theory and technology will promote the progress and development of electron sources as main part of vacuum macro-, micro- and nanoelectronics.

Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

Download or read book Nitride Wide Bandgap Semiconductor Material and Electronic Devices written by Yue Hao and published by CRC Press. This book was released on 2016-11-03 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Download or read book Wide Bandgap Semiconductor Electronics And Devices written by Uttam Singisetti and published by World Scientific. This book was released on 2019-12-10 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: 'This book is more suited for researchers already familiar with WBS who are interested in developing new WBG materials and devices since it provides the latest developments in new materials and processes and trends for WBS and UWBS technology.'IEEE Electrical Insulation MagazineWith the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.

Download or read book Disruptive Wide Bandgap Semiconductors Related Technologies and Their Applications written by Yogesh Kumar Sharma and published by BoD – Books on Demand. This book was released on 2018-09-12 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.

Download or read book Wide Bandgap Semiconductor Materials and Devices 18 written by V. Chakrapani and published by The Electrochemical Society. This book was released on 2017 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Wide Energy Bandgap Electronic Devices written by Fan Ren and published by World Scientific. This book was released on 2003 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, r. f. base station infrastructure and high temperature electronics.

Download or read book Wide Bandgap Nanowires written by Tuan Anh Pham and published by John Wiley & Sons. This book was released on 2022-07-04 with total page 361 pages. Available in PDF, EPUB and Kindle. Book excerpt: WIDE BANDGAP NANOWIRES Comprehensive resource covering the synthesis, properties, and applications of wide bandgap nanowires This book presents first-hand knowledge on wide bandgap nanowires for sensor and energy applications. Taking a multidisciplinary approach, it brings together the materials science, physics and engineering aspects of wide bandgap nanowires, an area in which research has been accelerating dramatically in the past decade. Written by four well-qualified authors who have significant experience in the field, sample topics covered within the work include: Nanotechnology-enabled fabrication of wide bandgap nanowires, covering bottom-up, top-down and hybrid approaches Electrical, mechanical, optical, and thermal properties of wide bandgap nanowires, which are the basis for realizing sensor and energy device applications Measurement of electrical conductivity and fundamental electrical properties of nanowires Applications of nanowires, such as in flame sensors, biological sensors, and environmental monitoring For materials scientists, electrical engineers and professionals involved in the semiconductor industry, this book serves as a completely comprehensive resource to understand the topic of wide bandgap nanowires and how they can be successfully used in practical applications.

Download or read book Nanoelectronic Materials Devices and Modeling written by Qiliang Li and published by MDPI. This book was released on 2019-07-15 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.

Download or read book Wide Bandgap Semiconductor Materials and Devices 16 written by S. Jang and published by The Electrochemical Society. This book was released on 2015 with total page 347 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Advances in Nanodevices and Nanofabrication written by Qing Zhang and published by CRC Press. This book was released on 2012-07-17 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: A variety of devices at nanometer/molecular scale for electronic, photonic, optoelectronic, biological, and mechanical applications have been created through the rapid development of materials and fabrication technology. Further development of nanodevices strongly depends on the state-of-the-art knowledge of science and technology at the sub-100 nm