Download or read book Vertical Silicon Single electron Devices with Silicon Nitride Tunnel Barriers written by David Martin Pooley and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Nitride Silicon Dioxide and Emerging Dielectrics 11 written by Electrochemical society. Meeting and published by The Electrochemical Society. This book was released on 2011 with total page 950 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions contains the peer-reviewed full length papers of the International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics held May 1-6, 2011 in Montreal as a part of the 219th Meeting of The Electrochemical Society. The papers address a very diverse range of topics. In addition to the deposition and characterization of the dielectrics, more specific topics addressed by the papers include applications, device characterization and reliability, interface states, interface traps, defects, transistor and gate oxide studies, and modeling.
Download or read book Proceedings of the IEEE Conference on Nanotechnology written by and published by . This book was released on 2005 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Vertical Electron Transport Across and Into A Two Dimensional Material Using Vertical Tunnel Structures and Electron Tunneling Spectroscopy written by Shin-Hung N/A Tsai and published by . This book was released on 2020 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over 50 years, Moore's law has successfully predicted the progress of the silicon electronics industry. However, Moore's law is approaching to the end recently, and new material and novel device type will be needed for next-generation devices. Two-dimensional (2D) layered material is one of the promising candidates due to its intrinsic desirable features, such as diverse electronic and magnetic properties, carrier mobility protection with decreasing body thickness, and flexibility for wearable applications. Furthermore, hetero-structure comprising of 2D crystals is of growing interest since various combinations are possible for multiple purposes as more and more van der Waals materials have been discovered. In a hetero-structure, electrons can propagate not only within 2D in-plane direction but also in the vertical out-of-plane direction. However, our understanding of the vertical carrier transport is greatly less than that on the lateral. Thus, using lateral electron energy band diagrams are still the main vehicle in 2D vertical hetero-structure device analysis, which may not be correct. In this dissertation, silicon-based tunneling devices were fabricated and used to investigate electron transport properties when electrons go into or go across a 2D materials with the measurement of electron tunneling spectroscopy. We firstly examine the role of 2D sheet when electrons propagate perpendicularly across it. Here graphene is used as a platform since it is the earliest discovered one, and it has the most mature development including understanding and growth techniques. Graphene together with its neighboring van de Waals gaps serves as a tunnel barrier and barely has interaction with the vertically tunneling electrons. However, since graphene can still trap a fraction of carriers, we can take advantage of it and control the carrier flux via the adjustment of graphene electrical potential. In addition to vertically propagating across a graphene sheet, electrons can go into graphene lateral band structure and transport within graphene. In chapter 3, we introduce a new model of the interfacial oscillation states at graphene-silicon hetero-junction, which is found and confirmed for the first time. Because of the presence of this discrete interfacial quantum state, Fano-Feshbach resonance is induced by its interaction with graphene's continuum lateral energy diagram. This study provided a further elucidation of the interfacial effect in a low-dimension materials based system. The capability of our silicon-based tunneling device along with electron tunneling spectroscopy is not limited to the graphene-silicon interface but also able to investigate electron in-plane transport behavior within 2D hetero-structure. Since large-size devices and their macroscopic characteristics would be needed for our everyday applications in the future, the strength of our tunneling device over the conventional scanning tunneling spectroscopy with a sharp tip is its scalable detecting area. Here, a study on graphene/hexagonal boron nitride hetero-stack prepared by chemical vapor deposition and large-area wet transfer techniques shows multiple secondary Dirac points and the preferred relative rotation angle of ~4 and ~7 . The theoretical calculation was also implemented to support our experimental observation. Raman spectroscopy and scanning tunneling microscope were carried out to confirm the Moire pattern formation. This study provides a useful way to macroscopically conduct research on the electronic behavior of a van der Waals material, and our findings may be used when graphene/hexagonal boron nitride hetero-structure is pushed to practical applications. Undoubtedly, further careful study is needed for more detailed verification.
Download or read book Nonvolatile Memory Technologies with Emphasis on Flash written by Joe Brewer and published by John Wiley & Sons. This book was released on 2011-09-23 with total page 766 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presented here is an all-inclusive treatment of Flash technology, including Flash memory chips, Flash embedded in logic, binary cell Flash, and multilevel cell Flash. The book begins with a tutorial of elementary concepts to orient readers who are less familiar with the subject. Next, it covers all aspects and variations of Flash technology at a mature engineering level: basic device structures, principles of operation, related process technologies, circuit design, overall design tradeoffs, device testing, reliability, and applications.
Download or read book Vertical Gate Controlled Tunnel Transistors in Si and SiGe written by Mathias Born and published by Cuvillier Verlag. This book was released on 2007-06-21 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt: Decreasing the size of transistor structures (“scaling”') is an ongoing trend in microelectronics, since smaller structures allow more chips to be placed on a wafer. So far, the result has always been a cost saving, with increasing complexity and clock frequency as welcome side effects. But shrinking the conventional MOSFET, on which the conventional CMOS technology is built on, leads to an increasing number of problems with every new technology generation. Many electrical parameters of the conventional MOSFET deteriorate by shrinking its channel length. The resulting short channel effects require ever more complicated compensation structures. Yet certain parameters such as the sub-threshold swing or the width of space charge regions do not scale. Thus, with decreasing channel length it becomes increasingly difficult to design a conventional MOSFET that can be switched off. Approaching approximately 10 nm, electrons would tunnel through the channel region even if the device was to be turned off, leading to unacceptable leakage currents. Instead of trying to avoid quantum mechanical tunneling, we could try to take advantage of it. This leads to the concept of the tunnel FET. It consists of a p-i-n diode, which has to be reverse-biased, and a gate stack like a conventional MOSFET. Its off-current is the leakage current of the p-i-n diode, which is extremely low and caused mainly by charge carrier generation in the intrinsic region. A positive gate voltage creates an electron-channel at the surface of the intrinsic region, which leads to a strong band bending at the p-end of the device. This allows electrons to tunnel from the valence band to the conduction band, resulting in a tunneling current. The same happens between the n-end of the device and a hole-channel caused by a negative gate voltage. The motivation for this work is the fact that this device concept of the tunnel FET has already been studied by different groups by means of computer simulations, which already improved the physical understanding of this novel concept. In addition, experimental prototypes have also been produced. However, their doping profiles do not meet the stringent demands, which have to be fulfilled in order to utilize the full potential of this device concept. Conventional CMOS technologies are insufficient, because the tunnel FET needs extremely sharp doping profiles, meaning very high concentration gradients. This is why the electrical characteristics of experimental prototypes have so far deviated significantly from computer simulations. This work focuses on the development of manufacturing processes for experimental prototypes, which show the required doping profiles. The main idea is to realize the tunnel FET vertically. First, the p-i-n layer stack was grown by epitaxy on a silicon substrate. Then freestanding mesa structures were created, by etching away all unnecessary parts of the p-i-n stack. This was followed by a gate stack; a passivation layer; and metal contacts. This method is already known from earlier work and is not applicable for mass production, but it has the important advantage that the channel length is determined by the epitaxy and can be controlled on a nanometer scale, despite the use of cheap photo lithography with a large minimum feature size. A serious problem of earlier investigations was the etching of the mesa structures; the achieved surface quality did not allow thin gate oxides. This resulted in a higher thermal budget, which led to a high diffusion of the doping atoms. Therefore a central aspect of this new work is: the development of a special dry-etch process for the necessary surface quality; the improvement of existing process steps; and the integration of new process modules into the device. In addition, the development of this process technology facilitated the production of SiGe tunnel FETs for the first time. The vertical transistor technology has been optimized to such an extent, that gate oxide thicknesses of less than 4 nm could be used and high surface mobilities could be achieved. This also revealed the limits of the vertical concept. Due to the high band gap of silicon, tunnel FETs made in silicon show an on-current which is far below industrial requirements. Any dopant diffusion reduces the on-current further. Simulations predict that the means of solving this problem could be the introduction of SiGe into the device, which is also a vital part of this work. However, this complicated the production of the gate stack for the vertical transistors, because the gate dielectric could not be grown by thermal oxidation and had to be replaced by an LPCVD silicon nitride The experimental prototypes built for this work confirmed most of the properties of the tunnel FET, which had been predicted by simulations. The drain current depends exponentially on the gate voltage. The spot-swing (a parameter similar to the subthreshold swing of a conventional MOSFET) depends on the gate voltage but not on temperature, and thus could be theoretically less than 60 mV/dec. The leakage currents are several orders of magnitudes below the ITRS requirements, and the output characteristics show perfect saturation independent of gate length. Since it is almost independent of temperature, the tunnel FET can be used above 120 °C with only minor changes of the electrical parameters, and thus at conditions which render the conventional MOSFET inoperable. The results obtained from the SiGe devices indicate that the on-current can be raised by orders of magnitude by using SiGe, as shown in simulations. However, further experiments will be necessary before any reliable conclusions can be drawn.
Download or read book Vertical 3D Memory Technologies written by Betty Prince and published by John Wiley & Sons. This book was released on 2014-08-13 with total page 466 pages. Available in PDF, EPUB and Kindle. Book excerpt: The large scale integration and planar scaling of individual system chips is reaching an expensive limit. If individual chips now, and later terrabyte memory blocks, memory macros, and processing cores, can be tightly linked in optimally designed and processed small footprint vertical stacks, then performance can be increased, power reduced and cost contained. This book reviews for the electronics industry engineer, professional and student the critical areas of development for 3D vertical memory chips including: gate-all-around and junction-less nanowire memories, stacked thin film and double gate memories, terrabit vertical channel and vertical gate stacked NAND flash, large scale stacking of Resistance RAM cross-point arrays, and 2.5D/3D stacking of memory and processor chips with through-silicon-via connections now and remote links later. Key features: Presents a review of the status and trends in 3-dimensional vertical memory chip technologies. Extensively reviews advanced vertical memory chip technology and development Explores technology process routes and 3D chip integration in a single reference
Download or read book Single electron Devices Based on Nanocrystalline Silicon written by Jörn Lützen and published by . This book was released on 1998 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics of Semiconductor Devices written by K. N. Bhat and published by Alpha Science Int'l Ltd.. This book was released on 2004 with total page 1310 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contributed papers of the workshop held at IIT, Madras, in 2003.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1973 with total page 1064 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book STAR written by and published by . This book was released on 1973 with total page 892 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards written by and published by . This book was released on 2008 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Springer Handbook of Semiconductor Devices written by Massimo Rudan and published by Springer Nature. This book was released on 2022-11-10 with total page 1680 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Download or read book Frontiers In Electronics With Cd rom Proceedings Of The Wofe 04 written by Michael S Shur and published by World Scientific. This book was released on 2006-08-10 with total page 774 pages. Available in PDF, EPUB and Kindle. Book excerpt: Frontiers in Electronics reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing a unique interdisciplinary overview of the key emerging issues.This volume accurately reflects the recent research and development trends: from pure research to research and development; and its contributors are leading experts in microelectronics, nanoelectronics, and nanophotonics from academia, industry, and government agencies.
Download or read book Advanced Semiconductor and Organic Nano Techniques Part I written by Hadis Morkoc and published by Academic Press. This book was released on 2003-06-26 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: Physical sciences and engineering, as well as biological sciences have recently made great strides in their respective fields. More importantly, the cross-fertilization of ideas, paradigms and methodologies have led to the unprecedented technological developments in areas such as information processing, full colour semiconductor displays, compact biosensors and controlled drug discovery to name a few. Top experts in their respective fields have come together to discuss the latest developments and the future of micro-nano electronics. They investigate issues to be faced in ultimate limits such as single electron transitors; zero dimensional systems for unique properties; thresholdless lasers, electronics based on inexpensive and flexible plastic chips; cell manipulation; biosensors; DNA based computers; quantum computing; DNA sequencing chips; micro fluidics; nanomotors based on molecules; molecular electronics and recently emerging wide bandgap semiconductors for emitters, detectors and power amplifiers. Contributions from top experts in this field Covers a wide range of topics
Download or read book Advanced Semiconductor and Organic Nano techniques Nanoscale electronics and optoelectronics written by and published by . This book was released on 2003 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt:
